JPS5831584A - Manufacture of solar battery - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] The present invention relates to a method for manufacturing a solar cell @C
dTo・A semiconductor with a forbidden band width of 1-4 eV 1. It has the optimum compliance band width as a base absorbent material for surface cells, and if a suitable window material is used in combination with CaS, it has been put into practical use as a C4 3/0 dTe solar cell. In addition, loO, the belt width is 8. a, eV (i lt in semiconductor, than OdS
i++ emperor 113 fi! 'Enter, aas j b
Mota n'Jt special @wavelength%? ! < +H4r, so it is suitable as a window material for Yuyo Aike. Conventional Zn
O and C! There has been interest in the combination of d'l'θ and VC batteries, and they have been developed, but all of them use single-crystal semiconductors and are of little practical use. Honkaimei, yo, stone 1
The 1st and 4th of the last source are imagined and the energy transfer θy)
Considering the current situation where requirements are being pressed, this 2110 and 0dT
By adding the moxibustion method of solar cells in combination with e and V, we aim to propose a method for manufacturing solar cells that has sufficient conversion efficiency, is inexpensive, and has good violet productivity. .

The method for manufacturing a solar cell according to Motoyaku 1 will be described below based on examples. ◎First, 1 to 10 mol of ada6ffi or ZnO(lH) is added to Zn0O high 4% powder.
To this, add propylene glycol, for example, as an organic viscosity, and knead well to prepare a paste. Apply a thin layer to the glass substrate E. ◎One method is to use a screen printer at this time.
After evaporating the binder in this coating film in a dryer, %N,
It is fired in an atmosphere to form an M-type ZnO sintered film.

Baked (or each when warm, 600℃~7 when mixed)
If the temperature is within the range of 00℃ and %znclxka people, the color is 40
The temperature should be within the range of 0°C to 860°C. - Conventionally, it was difficult to sinter at a low temperature of 7000 or less with Zoo conversion Q of low resistance, but this sintering is possible by adding the above-mentioned arsenic material (1). becomes.

Next, add 0.5 to 10 mol of small violet 8b, Te to the high purity powder of 0 (iTθ), add an appropriate amount of organic binder such as propylene glycol, and knead well to form a paste tdN. , this paste is applied to the N-type ZnO sintered film by a method such as screen printing.
After evaporating the binder, at 600 C to 70 C in N2 atmosphere.
tAm at 0°C, P-type 0 on N-type ZnOd rti
dTa y8 att formation -rO In this way, 1 tatami was formed on the cuff substrate, and ohmink contact electrodes, -1, for example Aff, To, were attached to the N-type 2-sintered film and the P-type 0aTe sintered film, respectively. Figure 1 shows the solar cell that was lifted up at step C. dM! ,(3
) vyo” type CdTek Ayu Ne, (4) Vyo0aTe
ill Ohmic electric shock 1 (5) is Zn01tm Ohmic electric shock.

By the method described in the above example, the conversion efficiency of the solar radiation of 75 countries and the sun of 75 countries was incident on the striations of the C-samurai n 7 diameter 11-inch pond and the distance between the cuff substrate AM 1.5 and 75 countries. and the lth
As shown in Figure 01mtie'P reference JνU and necessarily Ov, due to the tile-like shape, at least one sintered film is attached to the abrasive u Roman/ci and is carried out in the firing leakage fc. (Un) Below is an example of a solar cell that does not match.

Table 1 It is clear from Table 1 that the sinterability of 4bM is poor or the conversion efficiency does not even reach 8B in the thick battery of l/cg example, whereas the present invention The solar cell manufactured by method I has a high conversion efficiency of 6 or more, which is sufficiently practical.The method for manufacturing a solar cell according to the present invention has a highly practical conversion efficiency Moreover, the sintered film of N1ZnO and P7ff
l cdTa sintered film and fi (can be sintered at a low temperature of 700° C. or lower, therefore can be sintered on a gas bearing plate at no cost, consumes little power, is easy to manufacture, and is suitable for mass production at low cost.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a solar cell manufactured by this method. (1) ...Cuff link board, +2) -N i! 12n
O sintered film, (3) -P type C (LT8 sintered version, (4)
...Cd T e side ohmic electric current, (5)...Zn
O@Ohmic electrode agent Yoshihiro Morimoto

Claims (1)

[Claims] 1. ZnO powder K lN10 mol 96c/) c
Aal, mixed paste with anti-warping binder made from cypress, coated on guffs substrate 7, and heated to 500°C to 700°C in N medium.
to form N-type ZnO sintered ak, and then this Zn
A paste prepared by adding 0.5 to 10 molar of aa're powder, sb,'re, and an appropriate amount of organic binder was applied onto the O sintered film and heated at 500°C to 700°C in N. A method for manufacturing solar cells in which ohmic electrodes are attached to the sintered films after firing to form P-type C (ITθ sintered glands.
#* and an appropriate amount of 4F machine binder and mix the paste and apply it on the GAX board and N! Medium 4 OLIC ~ 650C
to form an N-type ZnO sintered wire, and then this Zn
Carefully add 0.5-10 mol of S on the O sintered film.
A paste prepared by adding B, To, and an appropriate amount of organic binder was spread and fired at 600°C to TOOC in N, to form a P-type care film, and each sintered film was attached with an ohmic electrode. How to prepare a solar cell with a standby pole -u Mif.