JPS5824444Y2 - Ultrasonic bonding equipment - Google Patents
Ultrasonic bonding equipmentInfo
- Publication number
- JPS5824444Y2 JPS5824444Y2 JP1978090082U JP9008278U JPS5824444Y2 JP S5824444 Y2 JPS5824444 Y2 JP S5824444Y2 JP 1978090082 U JP1978090082 U JP 1978090082U JP 9008278 U JP9008278 U JP 9008278U JP S5824444 Y2 JPS5824444 Y2 JP S5824444Y2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- semiconductor element
- wire
- container
- ultrasonic bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【考案の詳細な説明】
本考案は、半導体素子電極と、容器内部リードとを細線
で電気的及び機械的に接続する超音波ボンダのボンディ
ング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding device for an ultrasonic bonder that electrically and mechanically connects a semiconductor element electrode and a lead inside a container using a thin wire.
従来、超音波ボンダを用いてボンディングする場合、半
導体素子を収納する容器の種類によりボンディング方向
が異っていた。Conventionally, when bonding is performed using an ultrasonic bonder, the bonding direction differs depending on the type of container housing the semiconductor element.
つまり、半導体素子に最初ボンディングをして、しかる
後、容器の内部リード側にボンディングするのが第１の
方法。In other words, the first method is to first bond to the semiconductor element and then bond to the internal lead side of the container.
第２の方法は、容器の内部リード側に最初ポンチ゛イン
グをして、しかる後、半導体素子の電極にボンディング
する方法である。The second method is to first punch the internal lead side of the container and then bond to the electrodes of the semiconductor element.
第１の方法を正打ち、第２の方法は逆打ちという通称を
もっている。The first method is commonly known as straight hitting, and the second method is called reverse hitting.
普通は正打ち方法を用いてポンチ゛イングを行なうので
あるが、第１図に示す如く、セラミック型のケースの場
合、半導体素子１−３にまずボンディングをして、容器
の内部リードにボンディングツール１−１でポンチ゛イ
ングする場合、ワイヤ１−２がセラミックケースの側壁
１−４に当たり、それによりワイヤ切れが生しボンディ
ングできなくなる。Normally, punching is performed using a direct punching method, but as shown in Figure 1, in the case of a ceramic type case, the semiconductor element 1-3 is first bonded, and then the bonding tool 1-3 is attached to the internal lead of the container. 1, the wire 1-2 hits the side wall 1-4 of the ceramic case, causing the wire to break and making it impossible to bond.
そこで、現在ではこのような場合第２図に示すように逆
打ボンディングを行なう。Therefore, in such cases, reverse bonding is currently performed as shown in FIG.
まず、第１に容器の内部リードにボンディングをして、
それから後、半導体素子２−３の内部電極にボンディン
グする。First, bond the internal leads of the container.
After that, bonding is performed to the internal electrodes of the semiconductor element 2-3.
そうすることによって、容器の側壁２−４にワイヤ２−
２が当たることなくボンディングできる。By doing so, the wire 2-4 is attached to the side wall 2-4 of the container.
2 can be bonded without hitting.
ところが逆打ちした場合、ボンディングによって作られ
たポンチ゛イングワイヤループの形が、正打ちの如くル
ープが作られず半導体素子の周辺にワイヤが触れ、その
ワイヤに接続されている電極が、半導体素子の周辺と短
絡することになり、半導体素子の機能が全くなくなって
しまう。However, when punching backwards, the shape of the punching wire loop created by bonding does not form the same loop as when punching directly, and the wire touches the periphery of the semiconductor element, causing the electrode connected to the wire to touch the periphery of the semiconductor element. This will result in a short circuit with the surrounding area, and the semiconductor element will no longer function.
（第１図と第２図でループの形が違う）現在では、ボン
ディング後ワイヤのループを修正するのが普通である。(The shapes of the loops are different in Figures 1 and 2.) Currently, it is common practice to modify the wire loops after bonding.
しかしながらこのワイヤループ修正に要する工数は多大
なものであった。However, the number of man-hours required for this wire loop correction was enormous.
本考案は、上記の如くワイヤループ修正に要する工数を
皆無にするボンディング装置を提供するものである。The present invention provides a bonding device that eliminates the number of man-hours required for wire loop correction as described above.
本考案は半導体素子電極と容器内部リードとを金属細線
で電気的に接続する超音波ボンディングにおいて、半導
体素子の拡大と共にボンディング方向が逆打ちになった
ポンチ゛イング作業にワイヤ修正を自動的に行なうこと
を特徴とする。In ultrasonic bonding, which electrically connects semiconductor element electrodes and container internal leads using thin metal wires, this invention automatically corrects the wires during punching when the bonding direction is reversed as the semiconductor element expands. Features.
本考案を実施例を第３図を用いて説明する。An embodiment of the present invention will be described with reference to FIG.
逆打ちボンディングを行なう作業過程は従来通りである
。The work process for reverse bonding is the same as before.
まず容器内部電極にツール３−１でボンディングを行な
う。First, bonding is performed to the internal electrode of the container using the tool 3-1.
それから後、半導体素子３−３の電極にボンディングす
るため、ツール３−１を移動さす。Thereafter, the tool 3-1 is moved in order to bond to the electrodes of the semiconductor element 3-3.
その時、本考案による円筒形キャピラリ３−４の一端を
ビニール管３−５を媒介させて真空ポンプで引くことに
よりワイヤループ３−２を図の如く自動的に修正する。At this time, one end of the cylindrical capillary 3-4 according to the present invention is pulled by a vacuum pump through the vinyl tube 3-5, thereby automatically correcting the wire loop 3-2 as shown in the figure.
そしてボンディング修了後のワイヤループの形状からワ
イヤが半導体素子３−３の周辺に接触するこがないのは
明らかである。It is clear from the shape of the wire loop after bonding that the wire does not come into contact with the periphery of the semiconductor element 3-3.
以上詳細に説明した如く本考案によれば、逆打ちボンデ
ィング作業中に、ワイヤループの修正を自動的に行ない
、そのためワイヤと半導体素子周辺が接触することがな
いので、信頼性が高い半導体装置を提供し、しかも、ボ
ンディング時間の短縮につながる。As explained in detail above, according to the present invention, the wire loop is automatically corrected during the reverse bonding process, and as a result, the wire and the periphery of the semiconductor element do not come into contact with each other, resulting in a highly reliable semiconductor device. Moreover, it leads to shortening of bonding time.
第１図は第１に半導体素子電極にポンチ゛イングしてそ
れから後容器の内部電極にボンディングする従来技術を
示した概略断面図であり、第２図は容器の内部電極から
、半導体素子電極にポンチ゛イングする従来技術を示す
概略断面図である。
第３図は本考案の一実施例を示す概略断面図であり、自
動的にボンディングワイヤループが修正されることを示
している。
尚、図において、１−１．２−１．３−１・・・・・・
ポンチ゛イング用ツール、１−２．２−２．３−２・・
・・・・ポンチ゛イング用ワイヤ、１−３．２−３．３
−３・・・・・・半導体素子、１−４．２−４．３−４
・・・・・・容器側壁、３−４・・・・・・本考案を実
施するための円筒形キャピラリ、３−５・・・・・・真
空にするためのビニール管である。FIG. 1 is a schematic cross-sectional view showing a conventional technique in which a semiconductor device electrode is first punched and then bonded to an internal electrode of a container, and FIG. FIG. 1 is a schematic cross-sectional view showing a conventional technique. FIG. 3 is a schematic cross-sectional view of one embodiment of the present invention, showing automatic bonding wire loop modification. In addition, in the figure, 1-1.2-1.3-1...
Punching tool, 1-2.2-2.3-2...
...Wire for punching, 1-3.2-3.3
-3... Semiconductor element, 1-4.2-4.3-4
... Container side wall, 3-4 ... Cylindrical capillary for carrying out the present invention, 3-5 ... Vinyl tube for creating a vacuum.
Claims (1)
ィングする超音波ボンディング装置において、前記ボン
ディング用のツールの近傍に、該ツールと常に一体とな
って運動する真空チャックを有することを特徴とする超
音波ポンチ゛イング装置。An ultrasonic bonding apparatus for ultrasonically bonding an electrode of a semiconductor element and an internal lead of a container, characterized by having a vacuum chuck near the bonding tool that always moves in unison with the tool. Sonic punching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978090082U JPS5824444Y2 (en) | 1978-06-29 | 1978-06-29 | Ultrasonic bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978090082U JPS5824444Y2 (en) | 1978-06-29 | 1978-06-29 | Ultrasonic bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS557369U JPS557369U (en) | 1980-01-18 |
| JPS5824444Y2 true JPS5824444Y2 (en) | 1983-05-25 |
Family
ID=29018085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1978090082U Expired JPS5824444Y2 (en) | 1978-06-29 | 1978-06-29 | Ultrasonic bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5824444Y2 (en) |
-
1978
- 1978-06-29 JP JP1978090082U patent/JPS5824444Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS557369U (en) | 1980-01-18 |
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