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JPS58216474A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS58216474A
JPS58216474A JP57099521A JP9952182A JPS58216474A JP S58216474 A JPS58216474 A JP S58216474A JP 57099521 A JP57099521 A JP 57099521A JP 9952182 A JP9952182 A JP 9952182A JP S58216474 A JPS58216474 A JP S58216474A
Authority
JP
Japan
Prior art keywords
light
optical
adhesive
semiconductor device
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57099521A
Other languages
Japanese (ja)
Other versions
JPH0363227B2 (en
Inventor
Toru Nomura
徹 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57099521A priority Critical patent/JPS58216474A/en
Publication of JPS58216474A publication Critical patent/JPS58216474A/en
Publication of JPH0363227B2 publication Critical patent/JPH0363227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 この発明は、入射光を電気信号に変換したり、あるいは
入力電気信号を光に変換する光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical semiconductor device that converts incident light into an electrical signal or converts an input electrical signal into light.

〔発明の技雨的背景」 一従来、たとえば入射光を電気信号に変換する光半導体
装置は第１図（ａ）　（ｂ）に丁すような捕成になって
いる。すなわち、光電ｆｆ％素子１とその周辺回路から
なる半導体回路素子２をリードフレーム３に固清し、さ
らにこのリードフレーム３にワイヤポンディングした後
、これらを光透過性のモールド樹脂４で破瞳して一体化
し、しかる後このモールド樹脂４上を光不透過性モール
ド樹脂５で波罎して外形を形成する。そして、この光不
透過性モールド樹脂５の光電変換素子１と相対向する部
位に形成された入射光路に視感度補正フィルタ６を配設
し、このフィルタ６を透明樹Ｕｌ接着削７で固着する。[Technical Background of the Invention] Conventionally, for example, an optical semiconductor device that converts incident light into an electrical signal has a configuration as shown in FIGS. 1(a) and 1(b). That is, a semiconductor circuit element 2 consisting of a photoelectric ff% element 1 and its peripheral circuit is solidified on a lead frame 3, wire-bonded to this lead frame 3, and then ruptured using a light-transmitting mold resin 4. Then, the mold resin 4 is undulated with a light-opaque mold resin 5 to form an outer shape. Then, a visibility correction filter 6 is disposed in the incident optical path formed in a portion of the light-opaque molded resin 5 facing the photoelectric conversion element 1, and this filter 6 is fixed with a transparent resin Ul adhesive cut 7. .

その後、リードフレーム３の外部導出部を必要長さに切
断することにより、光半導体装置を構成していた。Thereafter, an optical semiconductor device was constructed by cutting the external lead-out portion of the lead frame 3 to a required length.

〔片景技術の間Ｈ力点〕[Emphasis between one view technique and H]

しかしながら、上述した従来の光半導体装置にあっては
、光透過性モールド樹脂４を形成した後、この光透過性
モールド樹脂４上に光不透過性モールド樹脂５を形成す
るので、成形時などにおける熱膨張および熱収縮により
境界部にわずかな隙間を生ずる。また、光電変換素子１
上部の入射光路に視感度補正フィルタ６を接着固定する
際、透明液状の接着剤７を使用するため、光透過性モー
ルド樹脂４と光不透過性モールド樹脂５との隙間に接着
剤が流れ込み、接着剤７の分散が減少し、強度的に不安
定なものである。このため、再開接着剤を追加する必要
があυ、しかも接着剤の減少曖が不定なため、追加供給
すべき接着剤の量も一定せず、非常に作業性の悪いもの
であった。また、流れ込む接着剤がリードフレーム３の
外部導出部にも伝わシ、この外部導出リードを絶縁被覆
してしまう。この波慢は透明であるため判明内錐で、導
屯不艮を粘たす等の問題があった。However, in the conventional optical semiconductor device described above, after the light-transmitting mold resin 4 is formed, the light-impermeable mold resin 5 is formed on the light-transmitting mold resin 4. A slight gap is created at the boundary due to thermal expansion and contraction. In addition, photoelectric conversion element 1
When adhesively fixing the visibility correction filter 6 to the upper incident optical path, a transparent liquid adhesive 7 is used, so the adhesive flows into the gap between the light-transmitting mold resin 4 and the light-opaque mold resin 5. The dispersion of the adhesive 7 is reduced and the strength is unstable. For this reason, it is necessary to add restart adhesive, and since the amount of adhesive decreases is uncertain, the amount of additional adhesive to be supplied is also inconsistent, resulting in extremely poor workability. Moreover, the adhesive flowing in is also transmitted to the external lead-out portion of the lead frame 3, and this external lead-out lead is coated with insulation. Since this wave is transparent, there were problems such as the inner cone being visible and causing the wave to become sticky.

〔発明の目的〕[Purpose of the invention]

この発明は上記事情に痙みてなされたもので、その目的
とするところケよ、接着剤の流れ込みの問題、および接
着剤の流出による導電不良を防止し、生産性の向上が図
れる光半導体装置を提供することにある。This invention was made in response to the above circumstances, and its purpose is to provide an optical semiconductor device that can improve productivity by preventing the problems of adhesive flowing in and conductive defects caused by adhesive flowing out. It is about providing.

〔発明の概要Ｊ すなわち、この発明に係る光半導体装置は、光変換素子
を含む半導体素子をリードフレームに固定した後、光学
フィルタの設けられるべき光変換素子の光路には光学フ
ィルタをはめ込む枠状喫は凹状のはめ込み部を有する光
透過性樹脂でモールドし、上記はめ込み部に光学フィル
タをはめ込み接Ｎ周定し、上記光学フィルタ上面には光
路祁を設けた状態で、上記光透過性樹脂部の外表面を光
不透過性樹脂によりモールド波１するようにして構成し
たものである。[Summary of the Invention J That is, in the optical semiconductor device according to the present invention, after a semiconductor element including an optical conversion element is fixed to a lead frame, a frame-shaped device is provided in which the optical filter is fitted in the optical path of the optical conversion element where the optical filter is to be provided. The cutout is molded with a light-transmitting resin having a concave fitting part, an optical filter is fitted into the fitting part, and an optical path is provided on the upper surface of the optical filter. The outer surface is molded with a light-opaque resin.

〔発明の実−例〕[Actual example of the invention]

以下、この発明の一実施例について図面を参　　　、１
照して説明する。なお、第１図と同一構成分には同一符
号を付しである。第２図（ａ）　（ｂ）において、光電
変換素子！とその周辺回路を形成した半導体回路素子２
を基台となるリードフレーム３に固定し、必要な部分は
ワイヤポンディングを行なう。Below, please refer to the drawings for an embodiment of this invention.
I will refer to and explain. Note that the same components as in FIG. 1 are given the same reference numerals. In FIGS. 2(a) and (b), the photoelectric conversion element! and semiconductor circuit element 2 forming its peripheral circuit
is fixed to a lead frame 3 serving as a base, and wire bonding is performed on necessary parts.

その後、上記光を変換素子１、半導体回路素子２および
リードフレーム３を光透過性モールド樹脂４でモールド
するが、この光透過性モールド樹脂４０光路となる上面
には、枠状のはめ込み部８を形成する。Thereafter, the light conversion element 1, the semiconductor circuit element 2, and the lead frame 3 are molded with a light-transmitting mold resin 4, and a frame-shaped fitting part 8 is provided on the upper surface of the light-transmitting mold resin 40, which becomes the optical path. Form.

そして、このはめ込み部８に視感度補正フィルタ６を載
置し、透明樹脂接着剤７で固着する。Then, the visibility correction filter 6 is placed in this fitting portion 8 and fixed with a transparent resin adhesive 7.

この場合、この液状の透明樹脂接着剤７は、枠状のはめ
込み部８より流出することはない。In this case, the liquid transparent resin adhesive 7 does not flow out from the frame-shaped fitting part 8.

この後、この光透過性モールド樹脂４の外表面を光不透
過性モールド樹脂５で被覆する。この際、視感度補正フ
ィルタ６の上面すなわち光不透過性モールド樹脂５の入
射光路部は被覆せず、光入射窓９を形成する。Thereafter, the outer surface of the light-transmitting mold resin 4 is covered with a light-impermeable mold resin 5. At this time, the upper surface of the visibility correction filter 6, that is, the incident optical path portion of the light-opaque molded resin 5 is not covered, and a light incident window 9 is formed.

このように、光透過性モールド樹脂４の上面の枠部で囲
まれた形状のはめ込み部８を形成しておき、このはめ込
み部８内に視感度補正フィルタ６を接着固定するため、
固着前は液状である接着剤７は、はめ込み部８内に溜り
、よってたとえ光透過性モールド樹脂４と光不透過性モ
ールド樹脂５との間に熱膨張或は熱収縮により隙間が生
じても、上記接着剤７の流れ込みはなく、外部導出リー
ド３の導電不良などが生じない。In this way, the fitting part 8 surrounded by the frame on the upper surface of the light-transmitting molded resin 4 is formed, and the visibility correction filter 6 is adhesively fixed within this fitting part 8.
The adhesive 7, which is liquid before fixing, accumulates in the fitting part 8, so even if a gap is created between the light-transmitting mold resin 4 and the light-impermeable mold resin 5 due to thermal expansion or contraction. , the adhesive 7 does not flow in, and conductivity failures of the external leads 3 do not occur.

また、この枠状はめこみ部８は、上記光透過モールド樹
脂４の形成型に凸部をあらかじめ設けておけば形成でき
るため、従来の光半導体装置の製造王様に新たな工程を
付加する必要なく形成できる。In addition, this frame-shaped inset portion 8 can be formed by providing a convex portion in advance on the molding die for the light-transmitting mold resin 4, so it can be formed without the need to add a new process to the conventional manufacturing method of optical semiconductor devices. can.

なお、上記実施例では、視感度補正フィルタ６のはｌ込
み部８が枠状のものにつき説明したがはめ込み部８は、
視感度補正フィルタ６の底面よシ高い側壁面を有するも
のであればよく、たとえば第３図に示すように、このフ
ィルタ６がはまる凹部状のものでもよい。In the above embodiment, the inset part 8 of the visibility correction filter 6 was explained as having a frame shape, but the inset part 8 is
It may be of any type as long as it has a side wall surface higher than the bottom surface of the visibility correction filter 6. For example, as shown in FIG. 3, the filter 6 may be in the form of a recess into which the filter 6 is fitted.

また、前記実施例では入射光を電気信号に変換する光半
導体装置に適用した場合について説明したが、これに限
らず、入力される電気信号を光に変換する光半導体装置
や、半導体回路素子の付属してない光半導体装置にも適
用でき、光路上に設けられる光学フィルタも視感度補正
フィルタに限らず、赤外線透過フィルタなど他の光学フ
ィルタにも通用可能なことは明らかである。Further, in the above embodiments, the case where the application is applied to an optical semiconductor device that converts incident light into an electrical signal has been described, but the application is not limited to this, but it is applicable to an optical semiconductor device that converts an input electrical signal to light, or a semiconductor circuit element. It is obvious that the present invention can be applied to optical semiconductor devices that are not attached, and that the optical filter provided on the optical path is not limited to the visibility correction filter, but can also be used for other optical filters such as an infrared transmission filter.

〔発明の効果〕〔Effect of the invention〕

−以上のように、この発明によれば、複雑な工程を付加
することなく光学フィルタ固定用の液状接着剤の流出の
問題を防止でき、接着剤の流出による接着剤供給量の不
安定性や無駄および外部導出リードの導電不良を防げ、
生産性の向上が図れる光半導体装置を提供できる。- As described above, according to the present invention, it is possible to prevent the problem of leakage of liquid adhesive for fixing optical filters without adding complicated processes, and to prevent instability and waste in the amount of adhesive supplied due to adhesive leakage. and prevents conductive defects in external leads.
An optical semiconductor device that can improve productivity can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）　（ｂ）は従来の光半導体装置を説明する
だめの平面図、および側断面図、第２図（ａ）　（ｂ）
はこの発明の一実施例を説明する平面図および側断面図
、第３図はこの発明の他の実施例を説明するための側断
面図である。 １・・・光電変換素子（光変換素子）、２・・・半導体
回路素子、３・・・リードフレーム、４・・・光透過性
モールド樹脂、５・・・光不透過性モールド樹脂、６・
・・視感度補旧フィルタ（光学フィルタ）、７・・・接
着剤、８・・・はめ込み部。 出願人代理人　　弁理士　鈴　江　武　彦：１ 第１図 第２図 第３ｇＪFigures 1 (a) and (b) are a plan view and side sectional view for explaining a conventional optical semiconductor device, and Figures 2 (a) and (b).
3 is a plan view and a side sectional view for explaining one embodiment of this invention, and FIG. 3 is a side sectional view for explaining another embodiment of this invention. DESCRIPTION OF SYMBOLS 1... Photoelectric conversion element (light conversion element), 2... Semiconductor circuit element, 3... Lead frame, 4... Light-transparent mold resin, 5... Light-opaque mold resin, 6・
...Visibility correction filter (optical filter), 7...Adhesive, 8...Inset part. Applicant's agent Patent attorney Takehiko Suzue: 1 Figure 1 Figure 2 Figure 3gJ

Claims (2)

【特許請求の範囲】[Claims] （１）光変換素子を含む光半導体素子と、この光半導体
素子に接続するリードフレームと、上記半導体素子およ
びリードフレームの接続部をモールドし上記光変換素子
の光路となる上面に光学フィルタのためのはめ込み部を
形成されている光透過性樹脂部と、このはめ込み部に透
明接着剤によって接着固定された光学フィルタと、上記
光学フィルタ上面の光路窓を残して上記光透過性樹脂部
の外表面をモールドｆＩｉｔｉする光不透過性樹脂部と
を具備したことを特徴とする光半導体装置。(1) An optical semiconductor element including a light conversion element, a lead frame connected to this optical semiconductor element, and a connection part between the semiconductor element and the lead frame is molded, and an optical filter is placed on the upper surface that becomes the optical path of the light conversion element. a light-transmissive resin part forming an inset part, an optical filter adhesively fixed to the inset part with a transparent adhesive, and an outer surface of the light-transmissive resin part, leaving an optical path window on the top surface of the optical filter. An optical semiconductor device comprising: a light-opaque resin portion for molding; （２）前記光変換素子は光電変換素子である特許請求の
範囲第１項ｎＣ戦の半導体装置。(2) The semiconductor device according to claim 1, wherein the photoconversion element is a photoelectric conversion element.
JP57099521A 1982-06-10 1982-06-10 Photosemiconductor device Granted JPS58216474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57099521A JPS58216474A (en) 1982-06-10 1982-06-10 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57099521A JPS58216474A (en) 1982-06-10 1982-06-10 Photosemiconductor device

Publications (2)

Publication Number Publication Date
JPS58216474A true JPS58216474A (en) 1983-12-16
JPH0363227B2 JPH0363227B2 (en) 1991-09-30

Family

ID=14249539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57099521A Granted JPS58216474A (en) 1982-06-10 1982-06-10 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS58216474A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60156759U (en) * 1984-03-28 1985-10-18 ミツミ電機株式会社 Light-electric conversion device
JPS61114859U (en) * 1984-12-28 1986-07-19
FR2600459A1 (en) * 1986-06-19 1987-12-24 Honda Motor Co Ltd LIGHT DETECTOR OF COMPOSITE TYPE
EP0807976A2 (en) * 1996-05-17 1997-11-19 Sony Corporation Solid-state imaging apparatus and camera using the same
DE102009046872B4 (en) 2009-11-19 2018-06-21 Ifm Electronic Gmbh Non-contact electronic switching device with an optical switching status indicator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120168U (en) * 1973-02-13 1974-10-15
JPS51156770U (en) * 1975-06-07 1976-12-14
JPS54109389A (en) * 1978-02-16 1979-08-27 Toshiba Corp Semiconductor device and its molding method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120168U (en) * 1973-02-13 1974-10-15
JPS51156770U (en) * 1975-06-07 1976-12-14
JPS54109389A (en) * 1978-02-16 1979-08-27 Toshiba Corp Semiconductor device and its molding method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60156759U (en) * 1984-03-28 1985-10-18 ミツミ電機株式会社 Light-electric conversion device
JPS61114859U (en) * 1984-12-28 1986-07-19
FR2600459A1 (en) * 1986-06-19 1987-12-24 Honda Motor Co Ltd LIGHT DETECTOR OF COMPOSITE TYPE
EP0807976A2 (en) * 1996-05-17 1997-11-19 Sony Corporation Solid-state imaging apparatus and camera using the same
EP0807976A3 (en) * 1996-05-17 1999-03-24 Sony Corporation Solid-state imaging apparatus and camera using the same
EP1715525A2 (en) * 1996-05-17 2006-10-25 Sony Corporation Solid-state imaging apparatus
EP1715525A3 (en) * 1996-05-17 2008-01-23 Sony Corporation Solid-state imaging apparatus
EP1715524A3 (en) * 1996-05-17 2008-01-23 Sony Corporation Solid-state imaging apparatus
EP1715526A3 (en) * 1996-05-17 2008-01-23 Sony Corporation Solid-state imaging apparatus and camera using the same
DE102009046872B4 (en) 2009-11-19 2018-06-21 Ifm Electronic Gmbh Non-contact electronic switching device with an optical switching status indicator

Also Published As

Publication number Publication date
JPH0363227B2 (en) 1991-09-30

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