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JPS58212007A - Semiconductive composition for power cable - Google Patents

Semiconductive composition for power cable

Info

Publication number
JPS58212007A
JPS58212007A JP9551982A JP9551982A JPS58212007A JP S58212007 A JPS58212007 A JP S58212007A JP 9551982 A JP9551982 A JP 9551982A JP 9551982 A JP9551982 A JP 9551982A JP S58212007 A JPS58212007 A JP S58212007A
Authority
JP
Japan
Prior art keywords
low
density polyethylene
weight
semiconductive
medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9551982A
Other languages
Japanese (ja)
Other versions
JPS6356645B2 (en
Inventor
清 渡辺
柳生 秀樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP9551982A priority Critical patent/JPS58212007A/en
Publication of JPS58212007A publication Critical patent/JPS58212007A/en
Publication of JPS6356645B2 publication Critical patent/JPS6356645B2/ja
Granted legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は電カケープルの導体外周および/または絶縁体
外周に設けられる半導電性組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductive composition provided on the outer periphery of a conductor and/or the outer periphery of an insulator of a power cable.

架橋ポリエチレン絶縁型カケープルの半導電性層と絶縁
体界面の平滑性、密着性は一ケーブルの信頼性にとって
重要であり、界面不整が存在すると局部的高電界が形成
され、コロナ放電や浸水時に゛水トリー劣化が生じ、ケ
ーブルの電気的特性が低ドする。
The smoothness and adhesion of the interface between the semiconducting layer and the insulator of a cross-linked polyethylene insulated cable are important for the reliability of a cable, and if there is any irregularity at the interface, a localized high electric field is formed, which can cause damage during corona discharge or flooding. Water tree deterioration occurs and the electrical characteristics of the cable deteriorate.

この問題に対し、従来より半導電性層の製造法面からと
材料面からの検討がなされてきており、ケバ立ちの多い
半導電性布テープに代わって押出型半導電性層が開発さ
れた。
To address this problem, studies have been conducted from the viewpoint of manufacturing methods and materials for semiconductive layers, and extruded semiconductive layers have been developed to replace semiconductive cloth tapes, which tend to have a lot of fuzz. .

押出型半導電性層の材料をみると、エチレン−酢酸ビニ
ル共重合体やエチレン−エチルアクリレート共重合体を
ベースポリマとするもの、エチレンプロピレンゴムと高
密度ポリエチレンの混合物をベースポリマとするもの等
が従来より知られている。
Looking at the materials for extruded semiconductive layers, there are those whose base polymer is ethylene-vinyl acetate copolymer or ethylene-ethyl acrylate copolymer, and those whose base polymer is a mixture of ethylene propylene rubber and high-density polyethylene. has been known for a long time.

時に、エチレンプロピレンゴムと高密度ポリエチレンの
混合物をベースポリマ°とする半導電性組成物は、内部
半導亀性層押出機と絶縁体押出機を直列に配置して電カ
ケープルをタンデム製造する場合、内部半導電層の損傷
や変形を受けにくく、また絶縁体と類似構造のポリマを
用いているため界面の平滑性および密着性が良いといっ
た特徴を有している。
Sometimes, semiconductive compositions whose base polymer is a mixture of ethylene propylene rubber and high-density polyethylene are manufactured in tandem by arranging an internal semiconducting layer extruder and an insulator extruder in series to produce electrical cables in tandem. The internal semiconducting layer is less susceptible to damage and deformation, and since it uses a polymer with a structure similar to that of an insulator, the interface has good smoothness and adhesion.

このよ′うな半導電性層を有する架橋ポリエチレン絶縁
型カケープルは破壊電圧が大幅に向上するものであるが
、ケーブル内に浸水が起きるような厳しい劣化条件下で
長期課電を行うと水トリーが多発し、破壊電圧が低下す
るという問題がある。
Cross-linked polyethylene insulated cables with such a semiconductive layer have a greatly improved breakdown voltage, but water treeing can occur if electricity is applied for a long period of time under severe deterioration conditions such as water seepage inside the cable. There is a problem that this occurs frequently and the breakdown voltage decreases.

本発明は上記した従来技術の問題点を解消するもので、
電カケープルの耐水トリー性を向上できる半導電性組成
物の提供を目的とするものである。
The present invention solves the problems of the prior art described above.
The object of the present invention is to provide a semiconductive composition that can improve the water resistance of electrical cables.

すなわち、本発明の半導電性組成物は、中低比重合法低
密度ポリエチレン(密度0.915〜o、930t/c
r/l)の混合割合が20〜50重量%であるエチレン
プロピレンゴムと中低比重合法低密度ポリエチレンの混
合物100重量部に導電性付与材を40重蓋部以上配合
して構成したことを特徴とするものである。
That is, the semiconductive composition of the present invention is made of medium-low density polymerized low-density polyethylene (density 0.915-o, 930t/c
It is characterized by being composed of 100 parts by weight of a mixture of ethylene propylene rubber and medium-low density polyethylene with a mixing ratio of 20 to 50% by weight (r/l) and 40 parts or more of a conductivity imparting material. That is.

本発明者は、耐水トリー性向上について種々検討した結
果、エチレンプロピレンゴムへの混合物として中低比重
合法低密度ポリエチレンを使用したとき、所望の目的を
達成するという実験結果を得、本発明に到った。
As a result of various studies on improving water resistance, the present inventor obtained experimental results showing that the desired objective was achieved when medium-low density polyethylene was used as a mixture with ethylene propylene rubber, and the present inventor has arrived at the present invention. It was.

中低比重合法低密度ポリエチレンは、従来の低密度ポリ
エチレンと異なり、長鎖分岐がなく、直鎖状の分子構造
をもつエチレン−αオレフィン共重合体である。このα
オレフィンには炭素数4以上のもの、例えばブテン−1
,4−メチルペテン−1、ヘキセン−1、オクテン−1
等が用いられる。
Unlike conventional low-density polyethylene, medium-low density polyethylene is an ethylene-α-olefin copolymer with no long chain branching and a linear molecular structure. This α
Olefins include those with 4 or more carbon atoms, such as butene-1
, 4-methylpetene-1, hexene-1, octene-1
etc. are used.

分子形状から推定されるように、中低比重合法低密度ポ
リエチレンは高密度ポリエチレンとほとんど同じ物性を
示すが、その密度は高密度ポリエチレンと高次構造が若
干異なるため、従来の低密度ポリエチレン並である。
As estimated from the molecular shape, low-density polyethylene obtained by medium-to-low specific polymerization shows almost the same physical properties as high-density polyethylene, but its density is slightly different from that of high-density polyethylene, so its density is comparable to that of conventional low-density polyethylene. be.

勿論、密度はαオレフィンの量を変えることにより高く
することができるが、密度を高くすると耐水トリー性は
高密度ポリエチレ/を用いた時と同様となり、最適密度
は0.915〜0.930 t/cr/lである。
Of course, the density can be increased by changing the amount of α-olefin, but if the density is increased, the water resistance will be the same as when high-density polyethylene is used, and the optimal density is 0.915 to 0.930 t. /cr/l.

混合物100重量−に占める中低圧型合法低密度ポリエ
チレ/の混合割合は20〜50重量%とする必蒙があり
、20重量%未満では十分な機械的強度を得られなく、
外周に絶縁体を押出被覆する場合に半導電性層に損傷や
変形が生じやすくなる。
The mixing ratio of medium-low pressure type legal low density polyethylene to 100% by weight of the mixture must be 20 to 50% by weight, and if it is less than 20% by weight, sufficient mechanical strength cannot be obtained.
When an insulator is extruded and coated on the outer periphery, the semiconductive layer is likely to be damaged or deformed.

50重量%を越えると、耐水トリー性が悪くなる。If it exceeds 50% by weight, water resistance will deteriorate.

上記混合物に導電性を付与するだめの導電性付与材の代
表的なものとしてチャンネルブラック、ファーネスブラ
ック、アセチレンブラック等のカーボンブラックがある
。混合物100重量部に対して導電性付与剤を40重量
部以上加える必要があり、40重量部以下では目的とす
る導電性が得られない。
Carbon blacks such as channel black, furnace black, and acetylene black are typical examples of conductivity-imparting materials that impart conductivity to the above-mentioned mixture. It is necessary to add 40 parts by weight or more of the conductivity imparting agent to 100 parts by weight of the mixture; if it is less than 40 parts by weight, the desired conductivity cannot be obtained.

かくして得られた半導電性組成物の調整は従来組成物の
調整に準じて、老化防止剤、加工助剤等必要な添加剤を
混合することによってなされる。
The semiconductive composition thus obtained is prepared in the same manner as conventional compositions by mixing necessary additives such as antiaging agents and processing aids.

以下、本発明の実施例を比較例と共に説明する。Examples of the present invention will be described below along with comparative examples.

各種成分を第1表に示すように配合して得た半導電性組
成物を、断面積150−の撚線銅導体上に押出被覆して
内部半導電性層を形成し、続いて低密度ポリエチレン(
密度0.9209Aa% MI 1.0 )1 [10
重量部、ジクミルパーオキサイド2.5重量部および酸
化防止剤0.25重量部を配合してなる絶縁体組成物を
押出被覆して未架橋絶縁体層を形成し、この外周に内部
半導電性と同じ組成の半導電性層゛を押出被覆して外部
半導電性層を形成し、ひき続き加熱架橋を咎なって架橋
ポリエチレン絶縁型カケープルを得た。
A semiconducting composition obtained by blending various components as shown in Table 1 is extrusion coated onto a stranded copper conductor having a cross-sectional area of 150 to form an internal semiconducting layer, followed by a low density coating. polyethylene(
Density 0.9209Aa% MI 1.0 )1 [10
parts by weight, dicumyl peroxide, and 0.25 parts by weight of an antioxidant are extrusion coated to form an uncrosslinked insulator layer, and an internal semiconducting layer is formed on the outer periphery of the insulator composition. The outer semiconducting layer was formed by extrusion coating a semiconducting layer of the same composition as the material, followed by heat crosslinking to obtain a crosslinked polyethylene insulating capeple.

このケーブルの導体内に注水を行ない、ケーブルを浸水
させた後50H2,15Kv交流心圧を導体と水電極間
に印加した。なお、水温は90℃とし、課電日数を18
か月とした。
Water was poured into the conductor of this cable to submerge the cable, and then an AC heart pressure of 50H2, 15Kv was applied between the conductor and the water electrode. The water temperature is 90℃, and the number of days for charging is 18.
Month.

課電終了後、絶縁体を0.5 fi厚にスパイラルカッ
トし、メチレンブルー水溶液で煮沸染色したのち、顕微
鏡で絶縁体と内部半導電性層の界面に発生した水トリー
数を観測した。その結果を第1表の下欄に示す。
After the electrification was completed, the insulator was spirally cut to a thickness of 0.5 fi, boiled and stained with a methylene blue aqueous solution, and then the number of water trees generated at the interface between the insulator and the internal semiconductive layer was observed using a microscope. The results are shown in the lower column of Table 1.

6一 第   1   表 (配合量は重針部) 第1表かられかる通り、中低圧重合法低密度ポリエチレ
ンを使用した場合は高密度ポリエチレンを使用した場合
よりも著しく水トリー発生数が減少している。ただエチ
レンプロピレンコムに対する中低圧型合法低密度ポリエ
チレンの配合割合が本発明の範囲外であるとき(比鹸薊
6)、あるいは中低圧重合法低密度ポリエチレンの密度
が本発明の範囲外であるとき(比較例2)は、著しい効
果が見られない。
6-Table 1 (Containing amount is heavy needle part) As can be seen from Table 1, when medium-low pressure polymerized low-density polyethylene is used, the number of water trees generated is significantly lower than when high-density polyethylene is used. ing. However, when the blending ratio of medium-low-pressure legal low-density polyethylene to ethylene propylene comb is outside the scope of the present invention (6), or when the density of medium-low-pressure polymerization low-density polyethylene is outside the scope of the present invention. (Comparative Example 2) shows no significant effect.

中低圧重合法低密度ポリエチレンを用いた半導電性層の
耐水゛トリー性が優れる理由については、まだ解明され
ていないが、密度が低い分たけ樹脂が柔軟になり、エチ
レンプロピレンゴムとの親和性が高くなることによると
推定される。
The reason why the semiconductive layer made of low-density polyethylene produced by medium-low pressure polymerization has excellent water resistance is not yet clear, but the lower density of the semiconducting resin makes it more flexible, which makes it more compatible with ethylene propylene rubber. It is estimated that this is due to the increase in

以上説明してきた通り、本発明によれば1−分なI幾械
的強度を有し、しかも耐水トリー性に優れた電カケープ
ル用半導電性組成物が得られることになる。
As explained above, according to the present invention, it is possible to obtain a semiconductive composition for a power cable that has a 1-minute I-mechanical strength and excellent water tree resistance.

手続補正書(自発) 1、事件の表示 昭和 57 年 特  許  顧第 95519   
号:1 、発明の名称  電カケープル用半導電性組成物   
□a 補正をする者 屯 代 理 人〒100 補正の対象 明細書の発明の詳細な説明。
Procedural amendment (voluntary) 1. Indication of the case 1982 Patent No. 95519
No.: 1, Title of invention: Semi-conductive composition for electrical cable
□a Person making the amendment 100 Detailed explanation of the invention of the specification to be amended.

補正の内容 明細書第7頁の第1表を次の通りに訂正する。Contents of correction Table 1 on page 7 of the specification is amended as follows.

2−2-

Claims (1)

【特許請求の範囲】 1、 エチレンプロピレンゴムにi度0.915〜0.
930t/crllの中低圧重合法低密度ポリエチレン
を混合してなり、中低圧重合法低密度ポリエチレンの混
合割合が20〜50重量%である混合物100重量部に
導電性付与材を40重量部以上配合してなることを特徴
とする電カケープル用半導電性組成物。 2、上記導電性付与材はカーボンブラックである特許請
求の範囲第1項記載の電カケープル用半導電性組成物。
[Claims] 1. Ethylene propylene rubber with an i degree of 0.915 to 0.
40 parts by weight or more of a conductivity-imparting material is added to 100 parts by weight of a mixture of 930 t/crll medium-low-pressure polymerized low-density polyethylene and the mixing ratio of medium-low-pressure polymerized low-density polyethylene is 20 to 50% by weight. A semiconductive composition for an electric cable, characterized by comprising: 2. The semiconductive composition for an electrical cable according to claim 1, wherein the conductivity imparting material is carbon black.
JP9551982A 1982-06-03 1982-06-03 Semiconductive composition for power cable Granted JPS58212007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9551982A JPS58212007A (en) 1982-06-03 1982-06-03 Semiconductive composition for power cable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9551982A JPS58212007A (en) 1982-06-03 1982-06-03 Semiconductive composition for power cable

Publications (2)

Publication Number Publication Date
JPS58212007A true JPS58212007A (en) 1983-12-09
JPS6356645B2 JPS6356645B2 (en) 1988-11-09

Family

ID=14139809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9551982A Granted JPS58212007A (en) 1982-06-03 1982-06-03 Semiconductive composition for power cable

Country Status (1)

Country Link
JP (1) JPS58212007A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246707A (en) * 1988-03-29 1989-10-02 Hitachi Cable Ltd Semiconductive resin composition
US6525119B2 (en) 1999-06-09 2003-02-25 Nippon Unicar Company Limited Cable semiconductive shield compositions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246707A (en) * 1988-03-29 1989-10-02 Hitachi Cable Ltd Semiconductive resin composition
US6525119B2 (en) 1999-06-09 2003-02-25 Nippon Unicar Company Limited Cable semiconductive shield compositions

Also Published As

Publication number Publication date
JPS6356645B2 (en) 1988-11-09

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