JPS58208380A - Paste to form thin fluophor film - Google Patents
Paste to form thin fluophor filmInfo
- Publication number
- JPS58208380A JPS58208380A JP11990682A JP11990682A JPS58208380A JP S58208380 A JPS58208380 A JP S58208380A JP 11990682 A JP11990682 A JP 11990682A JP 11990682 A JP11990682 A JP 11990682A JP S58208380 A JPS58208380 A JP S58208380A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- paste
- thickener
- fluophor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000002562 thickening agent Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000012190 activator Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 9
- 239000011701 zinc Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 37
- 150000002902 organometallic compounds Chemical class 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical group [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 1
- 150000002344 gold compounds Chemical class 0.000 claims 1
- 239000000020 Nitrocellulose Substances 0.000 abstract description 4
- 229920001220 nitrocellulos Polymers 0.000 abstract description 4
- 238000002485 combustion reaction Methods 0.000 abstract description 3
- 239000001856 Ethyl cellulose Substances 0.000 abstract description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 abstract description 2
- 229920001249 ethyl cellulose Polymers 0.000 abstract description 2
- 235000019325 ethyl cellulose Nutrition 0.000 abstract description 2
- 125000002524 organometallic group Chemical group 0.000 abstract 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- NYZGMENMNUBUFC-UHFFFAOYSA-N P.[S-2].[Zn+2] Chemical compound P.[S-2].[Zn+2] NYZGMENMNUBUFC-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 229910052981 lead sulfide Inorganic materials 0.000 description 2
- 229940056932 lead sulfide Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical group OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyloxyacetoaldehyde Natural products CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 1
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- -1 dimethyl heptalate Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、スクリーン印刷等により螢光体薄膜が形成さ
れる螢光体薄嗅形成用ペーストに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a phosphor thin olfactory forming paste in which a phosphor thin film is formed by screen printing or the like.
近年、電場発光素子(Fi L)などに見られるように
、螢光体薄膜の製造方法が檎々検討されてきている。こ
れまで薄膜の製造方法としては、真空蒸着、スパッタリ
ング、イオンブレーティングなど多くの方法が試みられ
ており、実用化されているものもある。これらの方法を
使えは、薄膜としては良好なものが得られるが、基板を
高真空下におかなければならないため量産性に乏しく、
また大きな面積の螢光面を得ることが錐しく高価になる
。In recent years, methods for producing phosphor thin films have been extensively studied, as seen in electroluminescent devices (Fi L). To date, many methods have been tried to produce thin films, such as vacuum evaporation, sputtering, and ion blating, and some have been put into practical use. Using these methods, good thin films can be obtained, but the substrate must be placed under high vacuum, making it difficult to mass-produce.
Furthermore, it is difficult and expensive to obtain a fluorescent surface with a large area.
これに対して本発明は、スクリーン印刷等により螢光体
薄膜が容易に形成できる螢光体薄膜形成用ペーストを提
供するものであり、安価で量産性に富みかつ大きな面積
の螢光面を容易に形成することができる。In contrast, the present invention provides a phosphor thin film forming paste that can easily form a phosphor thin film by screen printing, etc., and is inexpensive, easy to mass-produce, and easily forms a large area of phosphor surface. can be formed into
以下、本発明を硫化亜鉛の今光体について説明する。Hereinafter, the present invention will be explained regarding a zinc sulfide phosphor.
まず、薄喚製音に使用するペーストの製造を説明する。First, we will explain the production of the paste used for thin kansei sound.
螢光体母体′を構成する金属原子と有機物とからなる有
機金属化合物としては、通常の使用条件下では分解せず
、かつ後述する有機増粘剤の燃焼温度以下で分解するも
ので、また良好な溶媒が見出されることが必要である。The organometallic compound consisting of metal atoms and organic matter that constitutes the phosphor matrix is one that does not decompose under normal usage conditions, but decomposes below the combustion temperature of the organic thickener described below, and has good properties. It is necessary that a suitable solvent be found.
例えは、即鉛の有機金属化合物としては、化学的に安定
などスアセチルアセトナート亜鉛か好適である。For example, as the organometallic compound of quick lead, zinc suacetylacetonate is suitable because it is chemically stable.
有機金属化合物の溶媒としては、佛点が高く、スクリー
ン印刷等に適するように適度な粘性を持っていることが
要求される。例えば、前記ビスアセチルアセトナート亜
鉛の溶媒としては為ターピネオール、2エチルヘキサノ
ール、ベンジルアル”−#等17)lX4!アルコール
〜、ベンジルアセテート、ジメチル7タレート等の高沸
点エステル類、カルピトール、ブチルカルピトール、ブ
チルセロソルブ等の高沸点アルフール類などが用いられ
る。A solvent for an organometallic compound is required to have a high Buddha point and appropriate viscosity to be suitable for screen printing and the like. For example, the solvent for the zinc bisacetylacetonate may be terpineol, 2-ethylhexanol, benzylalol, etc. 17) lX4!alcohol, benzyl acetate, high boiling point esters such as dimethyl heptalate, calpitol, butyl calpitol. , high boiling point alfurs such as butyl cellosolve, etc. are used.
有機増粘剤としては、前記有機金属化合物と共通の溶媒
であることが要求され、ニトロセルロース、エチルセル
ロース等のセルロース化合物が嘗用される。前記有機溶
媒の一種あるいは二種以との混合液に、セルロース化合
物からなる有機増粘剤を溶解し連星な粘度にした溶液に
、一種あるいは二種以上の螢光体母体金属からなる有機
金属化合物を溶解して充分攪拌混合すれは、螢光体母体
薄膜形成用のペーストが得られる。このようにして作成
したペーストを、ドクターナイフ、ロールツーター、ス
クリーン印刷等の手段でガラス等の基板の上に塗布して
乾燥する。この際に、乾燥膜と基板との接着をよくする
ために、基板表面は充分に脱脂を行ない清浄にすること
が必要である。The organic thickener is required to be a common solvent with the organometallic compound, and cellulose compounds such as nitrocellulose and ethylcellulose are often used. An organic thickener made of a cellulose compound is dissolved in a mixture of one or more of the above organic solvents to give a binary viscosity, and an organic metal made of one or more phosphor host metals is added to the solution. By dissolving the compound and stirring and mixing thoroughly, a paste for forming a phosphor matrix thin film can be obtained. The paste thus prepared is applied onto a substrate such as glass using a doctor knife, a roll tool, screen printing, or the like, and then dried. At this time, in order to improve adhesion between the dry film and the substrate, it is necessary to sufficiently degrease and clean the surface of the substrate.
乾燥温度は、使用する溶媒の種類、有機金属の安定性な
どにより異なるが、概ね100℃前後である。乾燥した
基板を、螢光体母体を構成する陰性原子の化合物からな
るガス雰囲気中で、塗布した該有機金属化合物が熱分解
する温度以上に加熱すると、金属原子が遊離すると同時
に雰囲気中の陰性原子と反応し、基板上に螢光体母体化
合物が形成される。例えば、硫化亜鉛螢光体の場合には
、硫化水素や二硫化炭素の雰囲気中で、前記ビスアセチ
ルアセトナート亜鉛の分解温度130℃以上に加熱する
と、亜鉛が遊離し直ちに雰囲気中のイオウ原子と反応し
硫化亜鉛が形成される。The drying temperature varies depending on the type of solvent used, the stability of the organic metal, etc., but is generally around 100°C. When a dried substrate is heated in a gas atmosphere consisting of a compound of negative atoms constituting the phosphor matrix above the temperature at which the coated organometallic compound thermally decomposes, the metal atoms are liberated and at the same time the negative atoms in the atmosphere are A phosphor host compound is formed on the substrate. For example, in the case of a zinc sulfide phosphor, when heated to the decomposition temperature of zinc bisacetylacetonate, 130°C or higher, in an atmosphere of hydrogen sulfide or carbon disulfide, the zinc is liberated and immediately combines with sulfur atoms in the atmosphere. Reacts to form zinc sulfide.
この螢光体母体化合物が形成された基板を、空気中ある
いは酸素を付加した空気中で有機増粘剤の燃焼温度で加
熱すれは、増粘剤は燃焼消失し、基板上には螢光体母体
薄膜が形成される。例えば、増粘剤としてニトロセルロ
ースを使用した場合には、空気中で300〜500℃に
加熱すれは増粘剤は完全に燃焼し、螢光体母体薄膜が得
られる。When the substrate on which this phosphor matrix compound is formed is heated at the combustion temperature of the organic thickener in air or oxygen-added air, the thickener burns out and the phosphor remains on the substrate. A matrix thin film is formed. For example, when nitrocellulose is used as a thickener, the thickener is completely burned when heated to 300 to 500° C. in air, resulting in a phosphor matrix thin film.
このようにして作成した薄膜は、基板との密着性に優れ
、塗布膜厚、増粘剤の燃焼条件を適当に選択すれば透明
化も可能である。また、膜厚はペースト中に含有される
有機金属化合物の量および塗布膜厚を調整すれば、50
0〜3000オングストロームまで広い範囲にわたり容
易に変えることができる。ただし、膜厚が上記より厚く
なると膜中に微小なりラックが発生するようになり、良
好なものは得られにくくなる。The thin film thus prepared has excellent adhesion to the substrate, and can be made transparent by appropriately selecting the coating thickness and burning conditions for the thickener. In addition, the film thickness can be adjusted to 50% by adjusting the amount of organometallic compound contained in the paste and the coating film thickness.
It can be easily varied over a wide range from 0 to 3000 angstroms. However, if the film thickness is greater than the above, minute racks will occur in the film, making it difficult to obtain a good product.
このようにして形成される螢光体母体薄膜は、螢光体活
性剤を含有する方が望ましい。活性剤を付与する方法の
一つとしては、前記螢光体母体薄膜形成用ペーストに、
螢光体活性剤金属たとえは銀、銅、アルミニウムなどと
有機物とからなる有機金属化合物を、所要量だけあらか
じめ添加しておき1以下前記した螢光体母体薄膜の製造
方法と同じ順序で製造すれば、所望の活性剤が付与され
た螢光体薄膜を形成することができる。ただしこの場合
に、螢光体母体金属からなる有機金属化合物と、活性剤
金属からなる有機金属化合物とでは、熱分解湿質が異な
ることがあるので、その場合には、分解温度の低いもの
から逐次処理していけばよい。The phosphor matrix thin film thus formed preferably contains a phosphor activator. One method for adding an activator is to add the phosphor matrix thin film forming paste to the phosphor matrix thin film forming paste.
A phosphor activator (for example, an organometallic compound consisting of silver, copper, aluminum, etc.) and an organic substance is added in advance in the required amount, and the phosphor activator is manufactured in the same order as the method for manufacturing the phosphor matrix thin film described above. For example, a phosphor thin film loaded with a desired activator can be formed. However, in this case, the organometallic compound consisting of the phosphor host metal and the organometallic compound consisting of the activator metal may have different thermal decomposition wettability, so in that case, the one with the lowest decomposition temperature should be You can process it sequentially.
以下本発明の実施例について説明する。銅を付活した硫
化岨鉛螢光体薄膜は次の方法で形成する。Examples of the present invention will be described below. The copper-activated lead sulfide phosphor thin film is formed by the following method.
実施例
ビスアセチルアセトナート亜鉛を、プチルカルビトール
:プチルセロソルプ:ペンジルアセテ−)−3:2:5
の割合に混合した混合有機溶媒に溶かし、さらに増粘剤
としてニトロセルロースを15重1s添加してペースト
粘度がso 、 oooセンチボイズになるようにする
。このとき、ビスアセチルアセトナート亜鉛の含有量は
、ペースト全量に対して1〜20重量%となるように調
整する。Example bisacetylacetonate zinc, butyl carbitol:butyl cellosolp:pendylacetate)-3:2:5
The paste is dissolved in a mixed organic solvent mixed at a ratio of 15% by weight and 1s of nitrocellulose as a thickener to make the paste viscosity so, soooo centiboise. At this time, the content of zinc bisacetylacetonate is adjusted to 1 to 20% by weight based on the total amount of the paste.
このペーストに、活性剤として銅アセチルアセトナート
を、献鉛を硫化亜鉛に換算した重量に対して銅か10
原子慢になるように加え九分債拌混合する。Copper acetylacetonate was added to this paste as an activator, and copper or
Add 90% of the ingredients and stir to mix.
このペーストを用いて、ステンレスネット250メツシ
ユのスクリーン版でガラス基板上にスクリーン印刷し、
110℃で30分間乾燥する。乾燥した基板を炉中に入
れ雰囲気を不活性ガスで充分置換し、さらに硫化水素ガ
スで置換した後130〜160℃に昇温する。このとき
、ビスアセチルアセトナ−1tE鉛が分解し硫化亜鉛が
生成する。Using this paste, screen print on a glass substrate with a screen plate of 250 mesh stainless steel net,
Dry at 110°C for 30 minutes. The dried substrate is placed in a furnace, and the atmosphere is sufficiently replaced with an inert gas, and further replaced with hydrogen sulfide gas, and then the temperature is raised to 130 to 160°C. At this time, bisacetylacetonate-1tE lead decomposes and zinc sulfide is produced.
反応終了後再度不活性雰囲気にし200〜250℃に昇
温すると、銅アセチルアセトナートが分解し銅が遊離す
ると共に、先に生成した硫化亜鉛中に拡散してゆく。銅
の分解反応が終了したら雰囲気を空気で置換し500℃
で30分間焼成すれば増粘剤か完全に燃焼し、ガラス基
板上に透明な銅付活硫化推鉛の螢光体薄膜が形成される
。After the reaction is completed, the atmosphere is changed to an inert atmosphere again and the temperature is raised to 200 to 250°C. Copper acetylacetonate decomposes and copper is liberated and diffuses into the previously formed zinc sulfide. After the copper decomposition reaction is completed, the atmosphere is replaced with air and heated to 500°C.
When baked for 30 minutes, the thickener is completely burned out, and a transparent copper-activated lead sulfide phosphor thin film is formed on the glass substrate.
以上述べたように本発明のペーストを用いれは螢光体薄
膜を容易にかつ安価に縣造することかできる。As described above, by using the paste of the present invention, a phosphor thin film can be easily and inexpensively produced.
代理人 弁理士 武 顕次部Agent: Patent Attorney Takeshi Kenjibe
Claims (1)
有機物とからなる有機金属化合物と、有機金4化合物か
らなる螢光体活性剤と、前記増粘剤、有機金属化合物お
よび螢光体活性剤とを溶解する溶媒とからなることを特
徴とする螢光体薄膜形成用ペースト。 (2) 特許請求の範囲第(1)項記載において、前
記螢光体母体を構成する金属原子と有機物とからなる有
機金属化合物が、ビスアセチルアセトナート亜鉛である
ことを特徴とする螢光体薄膜形成用ペースト。 (3) 特許請求の範囲第(11rljk、載におい
て、前記増粘剤がセルロース化合物であることを特徴と
する螢光体薄嘆形成用ペースト。 (旬 特許請求の範囲第(1)項および第(2)項記載
において、前記螢光体活性剤が銅アセチルアセトナート
であることを特徴とする螢光体薄膜形成用ペースト。 (5) 特許請求の範囲第(1)項記載において、前
記螢光体母体を構成する金属原子と有機物とからなる有
機金属化合物が、前記増粘剤の慾焼温度以下で分解する
ことを特徴とする螢光体薄膜形成用ペースト。[Scope of Claims] (1) A thickener, an organometallic compound consisting of a metal atom and an organic substance constituting a phosphor matrix, a phosphor activator consisting of four organic gold compounds, and the thickener. 1. A paste for forming a phosphor thin film, comprising a solvent for dissolving an organometallic compound and a phosphor activator. (2) A phosphor according to claim (1), wherein the organometallic compound comprising a metal atom and an organic substance constituting the phosphor matrix is zinc bisacetylacetonate. Paste for forming thin films. (3) A phosphorescent thinning paste according to Claim No. 11, characterized in that the thickener is a cellulose compound. (2) A paste for forming a phosphor thin film, characterized in that the phosphor activator is copper acetylacetonate. (5) A paste for forming a phosphor thin film as described in claim (1). 1. A paste for forming a phosphor thin film, wherein an organometallic compound composed of metal atoms and an organic substance constituting the phosphor matrix decomposes at a temperature below the firing temperature of the thickener.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11990682A JPS58208380A (en) | 1982-07-12 | 1982-07-12 | Paste to form thin fluophor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11990682A JPS58208380A (en) | 1982-07-12 | 1982-07-12 | Paste to form thin fluophor film |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57090488A Division JPS58208379A (en) | 1982-05-29 | 1982-05-29 | Paste to form thin fluophor film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58208380A true JPS58208380A (en) | 1983-12-05 |
JPS6128714B2 JPS6128714B2 (en) | 1986-07-02 |
Family
ID=14773128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11990682A Granted JPS58208380A (en) | 1982-07-12 | 1982-07-12 | Paste to form thin fluophor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58208380A (en) |
-
1982
- 1982-07-12 JP JP11990682A patent/JPS58208380A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6128714B2 (en) | 1986-07-02 |
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