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JPS58204617A - Signal level converting circuit - Google Patents

Signal level converting circuit

Info

Publication number
JPS58204617A
JPS58204617A JP57087411A JP8741182A JPS58204617A JP S58204617 A JPS58204617 A JP S58204617A JP 57087411 A JP57087411 A JP 57087411A JP 8741182 A JP8741182 A JP 8741182A JP S58204617 A JPS58204617 A JP S58204617A
Authority
JP
Japan
Prior art keywords
transistor
potential
circuit
transistors
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57087411A
Other languages
Japanese (ja)
Inventor
Yuichi Takagi
高木 雄一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57087411A priority Critical patent/JPS58204617A/en
Publication of JPS58204617A publication Critical patent/JPS58204617A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce the pattern area by constituting two transistors (TRs) whose potentials are connected to a potential supply source having prescribed voltage so that the conduction is set at a potential of the potential supply source between the prescribed voltage and 0V. CONSTITUTION:A series circuit comprising p-channel MOSFETs TR1, TR2 and an n-channel MOSFETTR3 is provided between the potential supply sources V1 and V2, and in parallel with this series circuit, a series circuit comprising p- channel MOSFETs TR4, TR5 and an n-channel MOSFETTR6 is connected. The conduction of FETTR1, TR4 is set with the potential of the supply source V3. The potential of the supply source V1 is set at 3V, the potential of the V2 at 0V, and the potential V3 at 1.5V, respectively. The drain-source currents of the FETs TR1, TR4 are decreased by settng the gate potentials of the FETTR1, TR4 higher. Thus, the total pattern area is reduced.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この究明は、例えは電子詩編1に使用され各柚の一塩1
8号のレベルti挾する信号レベル変換回路に圓する。
[Detailed Description of the Invention] [Technical Field of the Invention] This investigation is based on, for example, one salt of each citron used in the electronic psalm 1.
It is connected to the signal level conversion circuit No. 8 which converts the level ti.

〔究明のB1.両市り11′承〕 一般に、鬼子時針は基準信号を発生する発振1g回路、
この発振回路から出力される基準信号を分周する分周回
路、分周回路で分周された容積の信号′kir′l゛時
または演算する一塩回路、−理回路による111時また
は演算結果t−表示装置に次ボ葛せるための駆動回路、
および上配繊埋卸路によるII’吋また龜yL舅粘釆を
六ント鉄匝に表7廖させる時に1時または演算結果の両
層レベルを表不&直のIJjA動に遇した両層レベルに
変換するための信号レベル変換回路を有している。
[Investigation B1. Ryoichiri 11'Sho] In general, the Oniko hour hand uses an oscillating 1g circuit that generates a reference signal,
A frequency dividing circuit that divides the frequency of the reference signal output from this oscillation circuit, a monosalt circuit that calculates the volume signal 'kir'l' divided by the frequency dividing circuit, and a 111 time or calculation result by the logic circuit. a driving circuit for causing the display device to blur;
And when IJJA movement of II' 2 and 6 ton iron via the upper fiber burial and unloading route is made, or when the two layer level of the calculation result is exposed and the two layers meet the IJJA movement. It has a signal level conversion circuit for converting the signal level.

ところで、電子時8[の衣ボ装置としては蔦准晶表ボ装
置(以下LCDと称する)か広く用いら′i1でいる。
By the way, as an electronic display device, a quasi-crystal display device (hereinafter referred to as an LCD) is widely used.

上記LCDの駆動電圧は、その制作゛−圧が3■以上の
ものが一般的でおる。一方、電子時鱈1゛は瀉蛍[7て
用いることが多いため、小ル@薫化への要求が強く、便
用する’ili源も小形電池を1ケ使用するものが多い
。従って、1iL池の)4−#を長くして交侠回数を減
らすために各1鮎の低τ8賀′亀力化への要求が5虫い
。こりようなli(γ11力化を達成するために多くの
電子時b1においては、上記見振回路、分胸回路、およ
び論理回路等で動作電圧の低電圧化を1ってふ・シ、1
.5■で製作するような回路画成となつCいる。
The drive voltage for the above-mentioned LCD is generally one in which the production voltage is 3 µm or more. On the other hand, since electronic time cod 1 is often used as a firefly [7], there is a strong demand for a small battery, and many convenient 'ili sources use one small battery. Therefore, in order to lengthen the 4-# of the 1iL pond and reduce the number of interactions, the demand for lowering the power of each sweetfish is 5 times higher. In order to achieve high li (γ11 power) in many electronic devices, it is necessary to reduce the operating voltage by using the above-mentioned test circuit, dividing circuit, logic circuit, etc.
.. The circuit definition and NatsuC are similar to those produced in 5■.

従って、上記−理回路による1時または?jIt葬粕果
をLCDで衣7J<させるためには、このil’lj!
’−または狐算粕朱に工らじて1.5v糸の蔭埋12月
を3■糸の論理信号に父侯する心安かめり、この上プな
16月のレベルの没侠を付なうために、信号レベル変換
回路をiけている。
Therefore, at 1 or 1 according to the above logic circuit? This il'lj!
'- Or, by making a fox calculator and using the 1.5V thread's shadow buried in December, the logic signal of the thread can be used as a father's peace of mind. To achieve this, a signal level conversion circuit is provided.

一ヒ配信号しベル震換回路は、第1図fC7J:すよう
に@成さJしている。すなわち、第lの電位惧帽諒V1
と@2の電位供#S源v3との間に・第121!電型(
Pチャネルりの第11第2のMOSトランジスタT r
l # T rz、および第24電型(Nチャネル)の
第3のrwsctS)ランノスタTraか接続された直
列回路〃・故けられるとともに、この直列回路と並列に
Pチャイ・ル型の第4、第5の&1すSトランノスタT
r4+’l’r5およびNチャネル城の第6のに+Qs
 l・ランソスタ1゛r6が直列俵杭される。イーして
、上記トランジスタTrl+Tr4に#20′−位供給
源v3の電位で導通設定するとともに、上記ドランノス
タTryはトランジスタrr1とTr6との接続点の電
位で4通制御さjシ、上記トランジスタTrsはトラン
ジスタTryとTryとの接続点の電位で導通制御きね
る。
The signal distribution and bell transducer circuit is constructed as shown in Figure 1. That is, the l-th potential difference V1
Between the potential supply #S source v3 of @2 and the 121st! Electric type (
P-channel 11th second MOS transistor T r
l # T rz, and the 24th electrical type (N channel) third rwsctS) Lannostar Tra or connected series circuit. 5th & 1st S Trannosta T
r4+'l'r5 and the 6th of N channel castle +Qs
L.Lancesta 1゛r6 is piled in series. Then, the transistors Trl+Tr4 are set to be conductive at the potential of the supply source v3 at #20'-, and the drainnoster Try is controlled four times by the potential at the connection point of the transistors rr1 and Tr6. Conduction can be controlled by the potential at the connection point between the transistors Try.

さらに、土日cトランジスタTr)は人力毎号Vinr
:4通’+tid 両’c! tL 、  )ランノス
タTr6は、第1の駐位惧和諒v1と第2゛の電位供給
源との間の電位を勺ノる第3の電位供粘諒v3と、第2
の電鼠株に5 (M V * とを反転レベルとするイ
ンバータli!I鮎ムvoTの出力(人力信号V、。の
反転出力)で導通制御される。そして、トランジスタT
r5+Tr6の接続点〃、ら出力伯・号V。utk倚る
Furthermore, Saturday and Sunday c transistor Tr) is human power every issue Vinr
: 4 letters + tid both 'c! tL, ) The running star Tr6 has a third potential supply voltage v3 that increases the potential between the first voltage supply voltage v1 and the second potential supply source, and a second
The conduction is controlled by the output of the inverter li!I Ayumu voT (inverted output of the human input signal V, .) whose inverting level is 5 (MV*).Then, the transistor T
The connection point of r5 + Tr6, and the output number V. utk chew.

上記のような構成にお・いて、第1の電位1共和W V
 tの電位を3vX第2の一泣供帖纒v2の電位をOv
1第3の電位供給源V!の電位を1.5Vに設定する。
In the above configuration, the first potential 1 co-sum W V
The potential of t is 3v x the potential of second v2 is Ov
1 Third potential supply source V! The potential of is set to 1.5V.

この時、上記トランジスタ’p rl * T r4は
冨時オン状恕にtりシ、入ノ月L4号VinがOvの時
はトランジスタTr31 ’f” rBがオン状態とな
9、トランジスタ’f rz r ’1’ reはオン
状態となる。従って出力信号■。utはOvとなる。
At this time, the above-mentioned transistor 'prl*Tr4 is in the ON state when it is full, and when Irunotsuki L4 No. Vin is Ov, the transistor Tr31 'f' rB is in the ON state9, and the transistor 'f rz r '1' re becomes on state. Therefore, output signal ■. ut becomes Ov.

−* fC、人力1B ”’i V r 11が1.5
vの時は、トランノスタT rB 11’ rB−pi
オンu 陣、T r z * T rBがオン状態とな
シ、出力1ム号V。utには3vのレベルρ・得られる
。つt#)、ovと1.5 Vとを調理レベルとする入
力1d号Vl、)を〜0■と3■とをthIi理レベル
とする論理1g号に変換できる。
-* fC, human power 1B ”'i V r 11 is 1.5
When v, trannostar T rB 11' rB-pi
When the signal is on, T rz * T rB is in the on state, and the output is 1. A level ρ of 3V is obtained at ut. It is possible to convert the input number 1d Vl,) whose cooking levels are t#), ov and 1.5 V into a logic number 1g whose cooking levels are ~0■ and 3■.

〔背景技術の問題点〕[Problems with background technology]

しかし、上り己のような一成の(g号しベル波灰回路は
、チップの占有四慎が大きい欠点が9ゐ◎般に、電子時
^](シおい−C上me (g 8レベル笈侠回路をL
CDの駆動用として用いる場合には、LCDの電惚畝た
けこの回路が心安となるので、′電子時it用のLSI
のチラノ面lt*を増大させる原因となる。以ド、これ
eCついて旺しく説明する・人力信号VinがOvから
15■に友化する場合、トランジスタT rB + T
 rBがオン状態、トランジスタTr!、Tr@かオン
状態の女足しfc状陣から、トランジスタTr3+Tr
6X+・オン状態、トランジスタi’rt+Tr・がオ
ン状態に還移する。この遷移tJVこさせるためには、
トランジスタTr3+Tr@のオン憶抗をトランジスタ
’1rleTr!のオン抵抗の木1ふ・よひトランジス
タT r4 r T rBのオン倶仇の和に比べて光分
大きなものにする心安かわる。こtLは、トランジスタ
Tr3がオン状態〃・らオン状態V(なった時に、トラ
ンジスタTr23J−まlどオン状態e乙めシ、この時
、トランジスタ’i’ rz * i’ rBの接続点
の電位i3Vから0■に反転り、、 72 &J #I
はならないためでりる。そして、土順トフンノスタTr
2 r T rBの接動C点の′電位が0■に反転する
と、トランノスタ1゛r5はオン状態となり、このトラ
ンジスタ’rr5の2ノ状態によってトランジスタTr
yがオフ状態となり安疋な状態となる。上記トランジス
タTrlnTrs&、Jスイッチング用のトランジスタ
で、m’にそのオン抵抗は、トランジスタTrl* T
 r4のオン抵抗に比べて充分小きいりでぶ祝できる。
However, the disadvantage of Issei's (G level) bell wave gray circuit like Asami's is that it occupies a large amount of chip space. L the chivalry circuit
When using it for driving a CD, the LCD's electric circuit is safe;
This causes an increase in the tyrannoplane lt*. Below, I will explain eC in detail. When the human input signal Vin changes from Ov to 15■, the transistor T rB + T
rB is on, transistor Tr! , Tr@ or from the on-state female addition fc-like formation, transistor Tr3 + Tr
6X+•on state, transistor i'rt+Tr• returns to on state. In order to make this transition tJV,
The on-resistance of transistor Tr3+Tr@ is transistor '1rleTr! It is safe to make the on-resistance tree 1 larger than the sum of the on-resistances of the transistors T r4 r T rB by an amount of light. This tL is the potential at the connection point of the transistor 'i' rz * i' rB when the transistor Tr3 changes from the on state to the on state V (when the transistor Tr23J changes to the on state e). Inverted from i3V to 0■, 72 &J #I
It's because it doesn't happen. And Tofunnosta Tr
When the potential at the contact point C of 2 r T rB is reversed to 0, the transistor 1 r5 is turned on, and the 2 state of the transistor 'rr5 turns the transistor Tr
y is turned off, resulting in a careless state. In the above transistor TrlnTrs&, J switching transistor, its on-resistance at m' is transistor Trl*T
The resistance is sufficiently small compared to the on-resistance of r4.

使って、トランジスター1lr3とTrlとのオン処わ
しの比、ふ−よびトランジスタTr6とTr4とのオン
抵抗の比が支配的になる。−鈑にこの抵抗比eユ舷10
1uに6尾される。
As a result, the on-state ratio of transistors 1lr3 and Trl and the on-resistance ratio of transistors Tr6 and Tr4 become dominant. -This resistance ratio is 10
6 fish per 1 u.

次に、上記抵抗比金5016に1短した吻合を例に取シ
、第1図に示した優号しベル父侠回路のパターン面積を
舅出す/)、上述したオンm4Aの比は、はぼ谷トラン
ジスタのオン状態時の′電流比と考えて艮いので、オン
状態時の電流をIとすると、           、
、。
Next, taking as an example the anastomosis which is shortened by 1 to the resistance ratio 5016, calculate the pattern area of the circuit shown in FIG. It is difficult to think of it as the current ratio when the Botani transistor is in the on state, so if the current in the on state is I, then
,.

I  シζ−K(Vf; 1 V16  )2 X μ
N(μP)X−’−・−41)となる。上式(1)にお
いて、Kは比例”1JIUz Vcsはトランジスタの
り9−ト・ソース同奄圧、■t1゜はトランジスタのし
きい1111電圧、μN(μP)はNナヤ・ネル1ll
cPチヤネル型〕トランジスタのキャリアの$1ktH
t、Tはトランジスタのチャネル暢対チャネル長の比で
ある。今、Nチャネル型トランジスタのキャリアの移動
&金Pチャネル型の約2倍、また、トランジスタのしき
い値電圧vthかダート・ソース間電圧vcgに比べて
充分小さいものとすると、トランジスタのオン状態時の
ドレイン・ソース間′龜ηCは、ダート・ソース向電圧
の2米に比例すると考えられる。従って、トランジスタ
TrsとTrlのでの比は+100:IJ程度となる。
I ζ-K (Vf; 1 V16 ) 2 X μ
N(μP)X-'--41). In the above equation (1), K is proportional 1JIUz Vcs is the transistor gate-source voltage, t1° is the transistor threshold 1111 voltage, μN (μP) is Nnaya-nel1ll
cP channel type] Transistor carrier $1ktH
t, T is the ratio of channel width to channel length of the transistor. Now, assuming that the carrier movement in an N-channel transistor is approximately twice that of a gold P-channel transistor, and is sufficiently smaller than the threshold voltage vth of the transistor or the dirt-source voltage vcg, when the transistor is in the on state, The drain-source distance ηC is considered to be proportional to the dirt-source voltage. Therefore, the ratio between transistors Trs and Trl is approximately +100:IJ.

上記ゲート長お上ひf−1−の最小1lllを10μm
と仮定すると、トランジスタTrlのτ比は「100:
10」、トランジスタT rlのτ比は「10:100
」となる。
The minimum 1lll of the above gate length upper f-1- is 10μm
Assuming that, the τ ratio of the transistor Trl is “100:
10'', and the τ ratio of the transistor T rl is ``10:100''.
”.

従って、上記第1図の回路の全面積はrioox10X
2X2=4000μm、、Jとz、b、i+ y ド面
槓がr100X100=10000μm2Ji曳である
ので、−!ラド−槓の約40チにも達する。上述したよ
うに従来の信号レベル変換回路は、チップに占めるII
IJ 貧がされめて太さくなる欠点が必る。
Therefore, the total area of the circuit shown in Figure 1 above is rioox10X
2X2=4000μm, , J and z, b, i+ y Since the do-menko is r100X100=10000μm2Ji, -! It reaches about 40 inches in length. As mentioned above, the conventional signal level conversion circuit occupies II
IJ: There is always the disadvantage of becoming fat due to poverty.

〔発明の目的〕[Purpose of the invention]

この発明は上Bピのような挙11tを朧み又な避れたも
ので、その目的とするところケよ、・!メーン囲核を幅
小でさる16号レベル笈供回路を促徂Jることである。
This invention vaguely avoids the 11t like the above B pi, and its purpose is...! The aim is to promote a No. 16 level lighting circuit with a narrow width around the main core.

〔発明の植貴〕[Plantation of invention]

すなわち、この児明tこふ・いては、上i己第1図の回
路における第11第4のトランジスタTry。
That is, in this case, the 11th and 4th transistors Try in the circuit of FIG.

Tr4τX第4τ蒐位供給碑v1 と第2の′電位世鮎
似■zとの同の電位を風紀する第3の電位04帖m V
 gの電位で導通6矩するように物取したもので必る。
Tr4τ
This is necessary because it is made so that it conducts 6 squares at a potential of g.

〔発明の夫施例〕[Example of invention husband]

以下、この発明の一′−kh例につい−C1囲で1照し
て祝明する。第2図はその構成を2s<−j−もので、
上l己第1図の回路における第1、第40トンンノスタ
T rl 、T r4のダートを、第1(1)電位h’
: m TJiA V 1 と第2の電位以帖m V 
zとの間(、、l )”)r定の電位に赦定8れた第3
の電泣供帖諒Vs kこ桜枕し、この′11&!、iX
Lで導通奴足するよりをこ徊成し友ものである0図にお
いて、第1図と同一構成部は同じ杓号を付しで(゛の説
明は/4略する。
Hereinafter, a 1'-kh example of this invention will be celebrated by highlighting it in the box -C1. Figure 2 shows the configuration for 2s<-j-,
The darts of the first and fortieth tonnostars T rl and T r4 in the circuit shown in FIG.
: m TJiA V 1 and the second potential m V
Between z and (,,l)'')r, the third point is allowed to have a constant potential.
'11 &! , iX
In Figure 0, which is a companion, the same components as in Figure 1 are given the same numerals (the explanation of ゛ is omitted).

上台cのよう71:摘取において、第1図の回路と同−
禾H・とjると、トランジスタTrl+Tr4のゲート
電位が高く設足されているので、トランジスタi’ r
l l T r4のドレイン・ンース電眞が低−1゛j
る@V8Th1.5Vとkkすると、トランジスタTr
3のW/Lは50/l O、トランジスタTrlのW/
Lは10150となるので、全面積はr50X10X2
X2=2000μmJとなる。従って、・ゼターン凶槓
葡1/2に低減できる。これはトランジスタのオン状態
時のドレイン・ンース間電ηCがW/■、に対しては比
例し、ダート・ソース間電圧に対しては2米に比例する
ためである。
Upper stand c 71: Same circuit as in Fig. 1 when picking.
Since the gate potential of transistors Trl+Tr4 is set high, the transistor i' r
l l T r4 drain/source voltage is low -1゛j
@V8Th1.5V and kk, the transistor Tr
W/L of 3 is 50/l O, W/L of transistor Trl
Since L is 10150, the total area is r50X10X2
X2=2000 μmJ. Therefore, it can be reduced to 1/2 of Zetaan. This is because the drain-to-source voltage ηC when the transistor is in the on state is proportional to W/■, and is proportional to 2 m to the dirt-source voltage.

ところで、上記第2図の回路を第1図の回路と同一1/
)ハターン向積で形成すれは、トランジスタTryとT
rlとのxi比をr200:IJの人8な1μに1足で
きる。こ7L、によって、入力信号Via Q)反転に
よる状悪魔移時間を短かくでき、トランジスタT rl
e T rs 6るいはTr4 r T rlが同時に
オン状態となる時間を短かくできる。従って、トランジ
スタTrl +Tr3 bるいIJ、T r 4 rT
r6のオン状態時に流れる貝通14L流を犬I−に低秋
できる。埃在、電子時打1月のLSIに−・いては低消
費′−力化への安水がきわめて強く、全消費電流がlμ
八へ下に逆するものも6j)、0.1μA@度の微小′
−流の削賦の勢力がなされCおシ、この発明t(よる信
号レベル賀侠回細を拡泊賀電力化のためK Le用して
も艮い・ また、この発明による16号レベル父侠11よ、第3図
の電位供11a W V sと8141の一位供帖詠と
の間の電位走が大さくなるeよど幼果が大さくなる・翁
に鰍近の電子時日1°においてtよ、次7Jり1谷が多
くなる細面にあり、LCDの41JI頬や駆動方法も壇
カロし、このよりなLCDにおいては駆動−圧、目 も4.5■まで必要なものが多くなっている。しかしな
がらLSIの出力端子数には如」約があるため、1つの
出力端子で仮数の衣示セグメント全MJA動するいイ)
ゆるノイナミック編動力式が用いられる。このようなw
A鯛方式のり、CL)では、Nf’ト電圧レベルとして
数独類を必要とし、例えばOV、15V、3V、4.5
Vの電圧レベルを必要とするものも多い、このようなI
、C1)を駆動するためK を1、例えば1.5vレベ
ルの論理イ8号を4.5Vレベルの@理(9号に五挨す
る必要があシ、このような場合には、トランジスタTr
3+TrlおよびT r6 r T r4のw/Lを犬
さく設定する必懺がり乙ので、この発明を通工已・する
ことによシ大きな幼果が得られる。
By the way, the circuit shown in Figure 2 above is the same as the circuit shown in Figure 1.
) The transistors Try and T
The xi ratio with rl is r200: IJ people can add 1 to 1μ of 8. By this 7L, it is possible to shorten the state transition time due to the input signal Via Q) inversion, and the transistor T rl
The time during which eTrs6 or Tr4rTrl are simultaneously in the on state can be shortened. Therefore, transistor Trl + Tr3 b blue IJ, Tr 4 rT
The 14L flow that flows when r6 is in the on state can be lowered to the dog I-. Currently, the demand for low power consumption is extremely strong in electronic LSIs, and the total current consumption is 1μ.
The one that reverses downward to 8 is also 6j), a minute value of 0.1 μA @ degree'
- The forces of stream reduction have been made, and it is no wonder that this invention is used to expand signal level control circuits into electric power. Warrior 11, as the potential run between the potential supply 11a W V s in Figure 3 and the 8141 Ichiki Kuchoei becomes larger, the young fruit becomes larger. At t, the next 7J is on a narrow surface with more valleys, and the 41JI cheeks and drive method of the LCD are also different, and in this more LCD, the drive pressure and eyes are also required up to 4.5■ However, there is a limit to the number of LSI output terminals, so one output terminal can operate the entire MJA segment of the mantissa.
A loose noise knitting force type is used. Like this lol
A sea bream method glue, CL) requires Sudoku as the Nf'to voltage level, for example, OV, 15V, 3V, 4.5
Many of these I
, C1), it is necessary to set K to 1, for example, 1.5V level logic 8 to 4.5V level @ logic (9).In such a case, the transistor Tr
Since it is necessary to set w/L of 3+Trl and Tr6 r Tr4 closely, large young fruits can be obtained by applying the present invention.

〔発明の幼果〕[The young fruits of invention]

以上説明したようにとのシロ明によれば、パターン四槙
を細小できる信号レベル変換N路が得らtLる。
As explained above, according to Shiroaki, there are N paths of signal level conversion that can make the pattern smaller and smaller.

【図面の簡単な説明】[Brief explanation of drawings]

1、A41図eま従来の信号レベル変換回路を示す図、
第2図はこの発明の一実施例に係る信号レベル反快回路
をろくす図である。 ■ム・・・第1の電位供給源、Vl・・・第2の電位m
bag、V @ −第3の電位供1= TIAz T 
rlyT r6・・・t、□O8)ランジスタ、NOT
・・・インバータ回路、fQ・・・入力1ム号、vou
t・・・出力1占号。 出願人代理人  ラ[畑土 −d 江 武 )211図
1. Figure A41 shows a conventional signal level conversion circuit.
FIG. 2 is a diagram illustrating a signal level recovery circuit according to an embodiment of the present invention. ■M...first potential supply source, Vl...second potential m
bag, V @ - third potential supply 1 = TIAz T
rlyT r6...t, □O8) transistor, NOT
... Inverter circuit, fQ ... Input 1 mu number, vou
t...Output 1 horoscope. Applicant's agent La [Hatado -d Jiang Wu] Figure 211

Claims (1)

【特許請求の範囲】[Claims] 第1の電位供粕Wと第2の1fL位B(粘諒とのlij
」に接枕妊れる第1導電型の第11第2のへハ)Sトラ
ンジスタおよび第2尋電型の第3のMOS トランジス
タから成る直列回路と、この直列1!、!I ii6 
)c並列接続逼れる第l尋電型の第4、第5ふ・よひ第
224%型の第60M0Sトランジスタの直夕II t
LJ路と、上記第6のh・10Sトランジスタに人力1
6カの反転信号を供柘するインバータ回路とを共細し、
上記第1、第40M0Sトランジスタは上BC第1の′
鉦位供幅諒と第2の電位供縮豚との間のHr冗の電位で
尋逍収足されるとともに、上記第20MO8)ランジス
タは第5の1V10s トランジスタの一端・の電匣で
骨通軸−゛さツム、上jjIL、第5のMOS )ラン
ジスタは上日己第2のMOS )フンノスタの一端の電
位で導通制御され、上記第3のMOSトランジスタは入
力信号で導通tiilJ $lil aれ、上1第5、
第6のMOS )ランジスタの接続点から出力信号11
−得るように構成したことを特徴とするイば号レベル変
換−路。
The first potential supply W and the second approximately 1fL B (lij
A series circuit consisting of an 11th MOS transistor of the 1st conductivity type and a 3rd MOS transistor of the 2nd conductivity type, which are connected to the 1! ,! Iii6
)c Parallel connection of the 4th and 5th transistors of the 1st electric type and the 60th M0S transistor of the 224% type.
The LJ path and the sixth h10S transistor are
It is combined with an inverter circuit that supplies 6 inverted signals,
The first and 40th M0S transistors are the upper BC first'
At the same time, the 20th MO8) transistor is connected to the electric box at one end of the fifth 1V10s transistor. The conduction of the fifth MOS transistor is controlled by the potential at one end of the second MOS transistor, and the third MOS transistor is made conductive by the input signal. , top 1, 5th,
6th MOS) Output signal 11 from the connection point of the transistor
- A level conversion path characterized in that it is configured to obtain an Iba level conversion path.
JP57087411A 1982-05-24 1982-05-24 Signal level converting circuit Pending JPS58204617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087411A JPS58204617A (en) 1982-05-24 1982-05-24 Signal level converting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087411A JPS58204617A (en) 1982-05-24 1982-05-24 Signal level converting circuit

Publications (1)

Publication Number Publication Date
JPS58204617A true JPS58204617A (en) 1983-11-29

Family

ID=13914130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087411A Pending JPS58204617A (en) 1982-05-24 1982-05-24 Signal level converting circuit

Country Status (1)

Country Link
JP (1) JPS58204617A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308130B1 (en) * 1999-09-27 2001-11-02 김영환 Data Transfer Circuit
JP2002084184A (en) * 2000-09-06 2002-03-22 Seiko Epson Corp Level shift circuit and semiconductor device using the same
JP2004221865A (en) * 2003-01-14 2004-08-05 Toppan Printing Co Ltd Level shift circuit
JP2005020142A (en) * 2003-06-24 2005-01-20 Fuji Electric Device Technology Co Ltd MOS type semiconductor integrated circuit
JP2010028867A (en) * 2009-11-02 2010-02-04 Fujitsu Microelectronics Ltd Level conversion circuit
JP2012124701A (en) * 2010-12-08 2012-06-28 Renesas Electronics Corp Level shift circuit and drive circuit having the same
US8854348B2 (en) 2009-10-15 2014-10-07 Samsung Electronics Co., Ltd. Negative level shifters

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308130B1 (en) * 1999-09-27 2001-11-02 김영환 Data Transfer Circuit
JP2002084184A (en) * 2000-09-06 2002-03-22 Seiko Epson Corp Level shift circuit and semiconductor device using the same
JP2004221865A (en) * 2003-01-14 2004-08-05 Toppan Printing Co Ltd Level shift circuit
JP2005020142A (en) * 2003-06-24 2005-01-20 Fuji Electric Device Technology Co Ltd MOS type semiconductor integrated circuit
US8854348B2 (en) 2009-10-15 2014-10-07 Samsung Electronics Co., Ltd. Negative level shifters
JP2010028867A (en) * 2009-11-02 2010-02-04 Fujitsu Microelectronics Ltd Level conversion circuit
JP2012124701A (en) * 2010-12-08 2012-06-28 Renesas Electronics Corp Level shift circuit and drive circuit having the same

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