JPS58184247A - Alignment method in ultra-fine ion beam processing - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] This invention is applicable to ultra-fine ion beam processing.

The present invention relates to an alignment method in ultra-fine electron beam processing that allows substrate alignment to be performed accurately, quickly and easily.

Ultrafine ion beam processing equipment has important applications, for example, in the manufacture of ultrahigh-density semiconductor devices, and in the manufacture of semiconductor devices, multiple substrate surface micromachining, a so-called mask alignment process, is unavoidable. It is.

Therefore, in order to carry out microfabrication of the substrate surface over a wide area and multiple times.

An accurate, fast and stable alignment mechanism is essential.

The alignment mechanism in ion beam processing is based on a method for detecting the compliance of the incidence of secondary defects on surface irregularities due to the correlation with the alignment mechanism in electron beam processing.
Can be mentioned.

However, with this method, the shape of the surface irregularities changes as they undergo various treatments, reducing their effectiveness as alignment marks, especially when automated.
There is a drawback that automatic discrimination of the alignment mark itself is extremely difficult.

In addition, since the alignment mark detection principle is to detect the compliance of the local secondary quadrupling rate on the substrate surface, reading errors may occur due to surface irregularities other than the mark, such as simple dust. It had the drawback of causing fatal damage to processing.

This invention was made in order to eliminate the above-mentioned drawbacks, and by providing an alignment mark on the substrate using a material that emits light when irradiated with an ion beam, and by detecting the emitted light, the bottom plate 7) is aligned. For example, semiconductor device 1! ,7)! A method for position 1 alignment in the ultra-hard ion heel b loe, which is stable for the processing of various structures such as those applied to children, can be formed directly on the cylindrical surface, and can be accurately, quickly, and stably aligned the position of the substrate. It provides:

Next, a practical example of this invention will be explained based on the drawings. In the figure, 1 is an ion source. An ion beam 2 generated from ions #Il is focused by a focusing lens 3, passes through a deflection lens 4, and irradiates an alignment mark 6 on a substrate 7. The substrate surface is a substrate to be processed, and a fine alignment mark 6 made of alumina or the like is formed on this substrate surface. The board 7 is a moving table 8
1g on top! ! It is now being filtered out.

On the other hand, the focusing lens 3 and the spacer lens 4 are provided with light emitting 'I'.
An optical system 5 is installed to perform the 9-ion/1-ion induced emission 9 directed from the 2nd alignment mark. After passing through the "container", the light magneton of Gen 9 is multiplied by 1 in the light can multiplier tube.

Next, a method for adjusting the position tm'B in ultra-fine ion beam processing according to the present invention by aligning the ultra-fine ion beam processing apparatus having the above-described configuration will be described.

Well, Jikyo 7 that should be processed has been transferred! II 138 Q
Place: C's mouse d is roughly moved. Next, in order to detect the deviation of the C1 substrate 7 from the correct position, the ion beam 2 is irradiated in the vicinity of the alignment mark 6 formed of, for example, alumina. As a result, light having a wavelength of, for example, 3962A, which is unique to alumina, is emitted.

Therefore, by setting the spectrometer 10 at 3962A and measuring the luminescence, it is possible to determine the point at which the ion beam 2 irradiates the alignment mark 6 of the alumina. Proceeding to the stage of child-centering, etc. becomes = r-ability.

Furthermore, as is clear from the characteristics of the alumina film, it is stable against various treatments when applied to the manufacturing process of semiconductor devices, does not affect the characteristics of semiconductor devices, and is highly reliable.

Furthermore, since O emission, which is characteristic of a certain substance, is used for convenience, the Kw of the alignment mark 6 is thick (although it is easily recognisable and can be easily determined by the secondary military detection mechanism). Unlike in other cases, it is easy to make mistakes between the alignment marks and the unevenness of the pond.

Although the above embodiment C is explained using only alumina as the alignment mark 6, it may also be At, Si, Cu, etc., and oxides thereof. In addition, the same effects as above can be expected with the ■-v compound or the rho-■ compound. Furthermore, instead of light emission, X@ may be detected.

As detailed above, according to the present invention, alignment marks are provided that emit light when the ion beam is irradiated onto the substrate, and alignment is performed by detecting the emitted light. The illumination can be performed laterally while keeping the beam conditions unchanged, there is no influence due to deformation of the alignment mark, there is no possibility of detection errors with other substances, and quick, easy, and accurate positioning is possible.

[Brief explanation of drawings]

The figure is a schematic diagram showing the configuration of an embodiment of an ultra-fine ion beam processing apparatus to which the present invention is applied. DESCRIPTION OF SYMBOLS 1... Ion source, 2... Ion beam, 3... Focusing lens, 4... Deflection lens, 5... Optical system, 6...
... Alignment mark, 7... Substrate, 8... Substrate holding and moving stage, 9... Ion beam induced light emission, 1
0...Spectroscope, n...Photomultiplier. Agent S. Field - Procedural amendment (volunteer to the Commissioner of the Patent Office 1, case description Patent Application No. 186016/1983 2)
, Title of the invention: Alignment method in ultra-fine ion processing 3, Relationship with the case of the person making the amendment Patent applicant 6, Detailed explanation of the invention in the specification subject to the amendment 6, Following the specification included in the amendment Correct as follows. Mr. Commissioner of the Japan Patent Office 1, Indication of the case, Patent Application No. 5@-18110118 2, Name of the invention, Position name in ultra-fine ion beam processing, Name (601) Mitsubishi Electric Corporation Representative Katayuni Yabe 4, Agent Resident Address: 2-2-3-6 Marunouchi, Chiyoda-ku, Tokyo
, The date of the amendment order is June 24, 1980, 6, the subject of the amendment is column 7 of the title of the invention in the written procedural amendment submitted on January 27, 1980, and the content of the amendment is as shown in the attached sheet. Above, i. Procedural amendment (spontaneous) January 27, 1980 Director General of the Patent Office 1, Indication of case Patent application No. 186016/1983 λ
Title of invention Positioning method in ultra-fine ion beam processing 8.
Relationship with the case of the person making the amendment Patent Applicant Address 2-2-8 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Hitoshi Katayama 4, Agent ・1・, 1 Address 2-2-8-5 Marunouchi, Chiyoda-ku, Tokyo
, column for detailed description of the invention in the specification subject to amendment

Claims (1)

[Claims] In ion beam micromachining, a material that emits light when irradiated with an ion beam is used as an alignment mark for the substrate to be D-rowed, and the substrate is positioned by comparing the luminescence horizontally. alignment method.