JPS58175192A - Read/write memory circuit - Google Patents
Read/write memory circuitInfo
- Publication number
- JPS58175192A JPS58175192A JP57055131A JP5513182A JPS58175192A JP S58175192 A JPS58175192 A JP S58175192A JP 57055131 A JP57055131 A JP 57055131A JP 5513182 A JP5513182 A JP 5513182A JP S58175192 A JPS58175192 A JP S58175192A
- Authority
- JP
- Japan
- Prior art keywords
- write
- read
- address
- circuit
- memory circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003745 diagnosis Methods 0.000 abstract description 19
- 238000010586 diagram Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の属する技術分−野
本発明は診断の向上を図ることを目−的としたシフトパ
スによる読出/書込メモリ回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field to Which the Invention Pertains The present invention relates to a read/write memory circuit using a shift path for the purpose of improving diagnosis.
(2)従来技術の説明
従来、パッケージテストにおいてシフトパス方式が有効
であるが、そのパッケージの被試験回路に読出/書込メ
モリ回路が含まれている場合には、この回路のシフトパ
スはある1つのアドレスに“限定してそのメモリ回路の
読出/書込を行っているために、そのメモリ回路のファ
ンイン側回路およびファンアウト側回路はシフトインお
よびシフトアウト動作によって十分なテストが行われて
いるが、このメモリ回路自体は全アドレスについての十
分な読出/書込テストができていないという欠点があっ
た。(2) Description of the prior art Conventionally, the shift path method has been effective in package testing, but when the circuit under test of the package includes a read/write memory circuit, the shift path of this circuit is Since reading/writing of the memory circuit is limited to the address, the fan-in and fan-out circuits of the memory circuit have been sufficiently tested by shift-in and shift-out operations. However, this memory circuit itself has a drawback in that sufficient read/write tests cannot be performed for all addresses.
(3)発明の目的
本発明の目的は、読出/書込メモリ回路において、診断
中ば書込が1度行われると次の書込動作までその書込ア
ドレスを読出アドレスとする読出アドレス切替回路と、
診]断中にシフトのときはシフトパスのデータを、7フ
トでないときは通常のデータを前記メモリ回路の入力デ
ータに切替えるデータ切替回路と、診断中ば書込アドレ
スで示された以外の全ワードにも書込アドレスで示され
たワードに書込まれる入力データの反転値を書込む書込
制御回路とを備えることにより、上記欠点を除去し、診
断中は読出/書込メモリ回路のシフトパスが特定の固定
アドレスで指定されるワードに限ることな(、ランダム
にアi°レスを変化でき、しかも、書込アドレスで指定
されたアドレス以外の全ワードにも書込アドレスで示さ
れたワードに書込まれるデータの反転値を常に書込むこ
とにより、診断中にも全アドレスと全ワードの読出/書
込試験ができる読出/書込メモリ回路を提供することに
ある。(3) Object of the Invention The object of the present invention is to provide a read address switching circuit in which, in a read/write memory circuit, once writing is performed during diagnosis, the write address becomes the read address until the next write operation. and,
A data switching circuit that switches the shift path data to the input data of the memory circuit when there is a shift during diagnosis, and normal data when it is not 7 feet, and all words other than those indicated by the write address during diagnosis. By providing a write control circuit that writes the inverted value of the input data to be written to the word indicated by the write address, the above drawback is eliminated and the shift path of the read/write memory circuit is changed during diagnosis. It is not limited to the word specified by a specific fixed address (i° address can be changed randomly, and all words other than the address specified by the write address can be changed to the word specified by the write address. It is an object of the present invention to provide a read/write memory circuit that allows read/write tests of all addresses and all words even during diagnosis by always writing an inverted value of data to be written.
(4)発明の構成
本発明は、複数ワードのメモリから構成され、その内の
1ワードをシフトパスとして使用し、シフト信号によっ
てシフトパスと通常のパスとを切替える入力データ切替
回゛路を有する読出/書込メ込アドレスを格納する回路
と、診断信号によって診断のときは前記メモリ回路の読
出アドレスとして前記格納回路を選び、非診断のときは
通常の読出アドレスを選ぶ選択回路と、前記診断信号に
よって診断のときは書込アドレスで示された以外の全ワ
ードにも書込アドレスで示されたワードに書込まれる入
力データの反転値を書込み、非診断のときは、書込アド
レスに示されたワードだけに入力データを書込む書込制
御回路とを備えたことを特徴とするものである。(4) Structure of the Invention The present invention is a read/write circuit that is composed of a plurality of words of memory, uses one word of the memory as a shift path, and has an input data switching circuit that switches between the shift path and the normal path using a shift signal. a circuit that stores a write address; a selection circuit that selects the storage circuit as the read address of the memory circuit when diagnosing based on the diagnostic signal; and a selection circuit that selects a normal read address when not diagnosing; When diagnosing, write the inverted value of the input data written to the word indicated by the write address to all words other than those indicated by the write address, and when not diagnosing, write the inverted value of the input data written to the word indicated by the write address. The present invention is characterized in that it includes a write control circuit that writes input data only to words.
(5)発明の原理と作用
本発明は、シフトパスを内蔵した読出/書込メモリ回路
において、診断中は前記メモリ回路に1度書込が行われ
ると次の書込動作までその書込アドレスが読出アドレス
になることによって、アドレスに関係なく書込/読出が
できる。しかも、書込アドレスで指定された以外のワー
ドにも、書込アドレスで指定されたワードに書込む入力
データの反転値を書込む。した°がって前記メモリ回路
を通過する1ワードのシフトパスはどのアドレスでもよ
く、診断中にシフトパスの為にアドレスを固定すること
は不要となり、ランダムな全アドレス、全ワードアクセ
ス診断が可能になる。(5) Principle and operation of the invention The present invention provides a read/write memory circuit with a built-in shift path, and during diagnosis, once writing is performed in the memory circuit, the write address remains unchanged until the next write operation. By becoming a read address, writing/reading can be performed regardless of the address. Furthermore, the inverted value of the input data to be written in the word specified by the write address is also written in words other than those specified by the write address. Therefore, the shift path of one word passing through the memory circuit can be any address, and it is no longer necessary to fix the address for the shift path during diagnosis, making it possible to perform random all-address, all-word access diagnosis. .
(6)実施例
次に、本発明の一実施りについて図面を用いて説明する
。(6) Embodiment Next, one embodiment of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例のブロック図、第2図は第1
図の読出/書込メモリ回路2の詳細図、第6図は第1図
のデータ切替回路3の詳細図、第4図は第1図の読出ア
ドレス切替回路4の詳細図、第5図は第1図の書込制御
回路5の詳細図である。FIG. 1 is a block diagram of one embodiment of the present invention, and FIG. 2 is a block diagram of an embodiment of the present invention.
6 is a detailed diagram of the data switching circuit 3 of FIG. 1, FIG. 4 is a detailed diagram of the read address switching circuit 4 of FIG. 1, and FIG. 5 is a detailed diagram of the read/write memory circuit 2 of FIG. 2 is a detailed diagram of the write control circuit 5 of FIG. 1. FIG.
第1図に示すように読出/書込メモリ回路1は、1ピツ
ト4ワードの読出/書込メモリ回路2と、シフト信号に
よってシフトパスとノーマルパスとを切替えて読出/書
込メモリ回路2にデータを出力するデータ切替回路3と
、診断−信号によって、読出/書込メモリ回路2の書込
アドレスを格納したものかあるいは通常の読出/書込メ
モリ回路2の読出アドレスかを切替]えて該回路2に読
出アドレスを出力する読出アドレス切替回路4と、前記
お断信号によって書込アドレスで示された以外の全ワー
ドにも書込アドレスで示されたワードに書込まれる入力
データの反転値を書込むかあるいは書込アドレスに示さ
れたワードだけに入力データを書込む書込制御回路5と
を備えている。As shown in FIG. 1, a read/write memory circuit 1 includes a 1-pit, 4-word read/write memory circuit 2, and a shift signal to switch between a shift path and a normal path to transfer data to the read/write memory circuit 2. and a data switching circuit 3 which outputs a data switching circuit 3, which switches between the stored write address of the read/write memory circuit 2 and the read address of the normal read/write memory circuit 2 according to the diagnostic signal. A read address switching circuit 4 which outputs a read address to 2, and an inverted value of the input data to be written to the word indicated by the write address to all words other than the one indicated by the write address by the above-mentioned cutoff signal. A write control circuit 5 is provided for writing or writing input data only to the word indicated by the write address.
読出/書込メモリ回路2は第2図に示すように、データ
信号501,502’、 505,504を書込制御信
号505,506,507,508にしたがい書込パル
ス信号009で格納するメモリ回路22.23.24.
25と、読出アドレス401,402をデコードしてメ
モリ回路22.23,24.25からの出力信号221
゜231.241,251の内1つを読出/書込メモリ
回路2の出力信号として選択する選択信号211,21
2゜215.214を発生するデコーダ21と、選択信
号221.231,241,251と選択信号211.
212゜213.214とをそれぞれ入力してNAND
論理をとる26.27,28.29と、該NANDゲー
ト26,27゜28.29の出力信号261,271,
281.、?91を入力してNAN D論理をと゛り読
出アドレス401゜402によって選択されたメモリ回
路からの信号を読出/書込メモリ回路2の出力信号20
1として発生するNANDゲート2Aとがら構成される
。As shown in FIG. 2, the read/write memory circuit 2 is a memory circuit that stores data signals 501, 502', 505, 504 using a write pulse signal 009 in accordance with write control signals 505, 506, 507, 508. 22.23.24.
25 and the output signals 221 from the memory circuits 22.23, 24.25 by decoding the read addresses 401 and 402.
Selection signals 211 and 21 for selecting one of ゜231.241 and 251 as the output signal of the read/write memory circuit 2
2°215.214, selection signals 221.231, 241, 251 and selection signals 211.
Input 212゜213.214 respectively and NAND
26.27, 28.29 that takes logic, and output signals 261, 271,
281. ,? 91 to read/write the signal from the memory circuit selected by the read address 401 and 402 through the NAND logic. Output signal 20 of the memory circuit 2
It is composed of a NAND gate 2A that generates a 1.
ゲート切替回路6は第3図に示すようにシフト信号00
3を入力してシフト信号の正極性信号311と負極性信
号312とを出力するゲート31と、正極性信号311
とシフトパスデータ信号002とを入力してNAND出
力するNA、NDゲート32と、負極゛他信号312と
ノーマルパスデータ信号001とを入力してNAND出
力するNANDゲート33と、NAN Dゲート62の
出力信号321とNANDゲート33の出力信号331
とを入力しでNAND論理をとりデータ信号301を読
出/書込メモリ回路2へ出力するNANDゲート34と
から構成され、シフト信号003が1のときはシフトパ
スデータ信号002が、シフト信号003が00ときは
ノーマルパスデータ信号001が読出/書込メモリ回路
2のデータ信号301となる。The gate switching circuit 6 receives a shift signal 00 as shown in FIG.
A gate 31 inputs a signal 3 and outputs a positive polarity signal 311 and a negative polarity signal 312 of the shift signal, and a positive polarity signal 311.
and the shift pass data signal 002, and the NAND gate 32, which inputs the negative polarity signal 312 and the normal pass data signal 001, and outputs the NAND signal, and the NAND gate 62. Output signal 321 and output signal 331 of NAND gate 33
and a NAND gate 34 which takes the NAND logic by inputting and outputs the data signal 301 to the read/write memory circuit 2. When the shift signal 003 is 1, the shift pass data signal 002 is set, and the shift signal 003 is set to 1. 00, the normal pass data signal 001 becomes the data signal 301 of the read/write memory circuit 2.
読出アドレス切替回路4は第4図に示すように、診断信
号008を入力して]お断信号の正極性信号411と負
極性信号412とを出力するゲート41と、書込アドレ
ス004,005を書込パルス信号009によってそれ
ぞれ格納する書込アドレス格納回路42.43と、該回
路42.43の出力信号421゜451と正極性信号4
11とそれぞれNAND論理をとるNANDゲー)44
,45と、ノーマル読出アドレス006,007と負極
性信号412とそれぞれNAND論理をとるNANDゲ
ート46.47と、NANDゲート44の出力信号44
1とNANDゲート46の出力信号461とを入力して
NAND論理をとり読出アドレス401を出力するNA
NDゲート48と、NANDゲート45の出力信号45
1とNANDゲート47の出力信号471とを入力して
NAND論理をとり読出アドレス402を出力するNA
N Dゲート49とがら構成され、診断信号0[]8が
1のときは、1クロツク前の書込アドレス004.O’
05が、診断信号008がOのときはノーマル読出アド
レス006,007が読出/書込メモリ回路2の読出ア
ドレス401゜402となる。As shown in FIG. 4, the read address switching circuit 4 has a gate 41 which inputs the diagnostic signal 008 and outputs a positive polarity signal 411 and a negative polarity signal 412 of a cut-off signal, and a gate 41 which outputs a positive polarity signal 411 and a negative polarity signal 412, and a gate 41 which inputs the diagnostic signal 008 and outputs the write address 004, 005. Write address storage circuits 42 and 43 each store according to the write pulse signal 009, output signals 421 and 451 of the circuits 42 and 43, and positive polarity signal 4.
11 and a NAND game that takes NAND logic respectively) 44
, 45, NAND gates 46 and 47 which take NAND logic with the normal read addresses 006 and 007 and the negative polarity signal 412, respectively, and the output signal 44 of the NAND gate 44.
1 and the output signal 461 of the NAND gate 46, performs NAND logic, and outputs the read address 401.
ND gate 48 and output signal 45 of NAND gate 45
1 and the output signal 471 of the NAND gate 47, performs NAND logic, and outputs the read address 402.
When the diagnostic signal 0[]8 is 1, the write address 004. O'
05, and when the diagnostic signal 008 is O, the normal read addresses 006 and 007 become the read addresses 401 and 402 of the read/write memory circuit 2.
書込制御回路5は第5゛図に示すように診断信号008
を入力して診断信号の負極性信号511を出力するゲー
ト51と、書込アドレス信号004,005を入力して
、デコード信号521.522.523,524を発生
するデコーダ52と、デコード信号521゜522.5
23.’524とデータ切替回路3かものデータ信号3
01とを入力してエクスクル−シブ・ノア論理をとり、
該デコード信号が1のときデータ信号301の正極性信
号を、0のとき負極性信号を発生し、データ信号501
,502,503,504として読出/書込メモリ回路
2へそれぞれ出力するエクスクル−シブ・ノアゲート5
3,55,57.59と、デコード信号521,522
..523,524をそれぞれ入力して負極性信号54
1,561,581.5AI を出力するゲー) 54
,56,58.5Aと、診断信号の負極性信号511と
デコード信号の負極性信号541゜561.581.5
AIとそれぞれNAND論理をとりすなわち診断信号が
1のときまたはデコード信号力11のときは1を発生し
、書込制御信号505.506゜5072.508とし
て読出/書込メモリ回路2へ出力j ルNAND ’y
’ −ト5B、 5’C,5D、 5B、!:カラm成
される。The write control circuit 5 receives a diagnostic signal 008 as shown in FIG.
a gate 51 which inputs the negative polarity signal 511 of the diagnostic signal, a decoder 52 which inputs the write address signals 004, 005 and generates decode signals 521, 522, 523, 524, and a decode signal 521°. 522.5
23. '524 and data switching circuit 3 data signal 3
01 and take exclusive Noah logic,
When the decode signal is 1, a positive polarity signal of the data signal 301 is generated, and when it is 0, a negative polarity signal is generated.
, 502, 503, 504 to the read/write memory circuit 2, respectively.
3, 55, 57.59 and decoded signals 521, 522
.. .. 523 and 524 respectively to generate a negative polarity signal 54.
A game that outputs 1,561,581.5 AI) 54
, 56, 58.5A, the negative polarity signal 511 of the diagnostic signal, and the negative polarity signal 541 of the decode signal 561.581.5
Each takes NAND logic with AI, that is, when the diagnostic signal is 1 or when the decode signal output is 11, it generates 1, and outputs it to the read/write memory circuit 2 as a write control signal 505.506°5072.508. NAND'y
'-5B, 5'C, 5D, 5B,! : A color is formed.
次に本発明の動作について説明する0 ゛お断信号00
8が0のときは読出アドレス切替回路4は読出アドレス
401,402にノーマル読出アトvy、006,09
7を選択するので、書込アドレス004.005と読出
アドレス401,402は互いに影響しないで読出/書
込メモリ回路2に対して動作する。しかも書込制御信号
は書込アドレスで選択されたワードに対してのみ書込可
能状態にする。Next, the operation of the present invention will be explained.
When 8 is 0, the read address switching circuit 4 sets the read addresses 401 and 402 to normal read addresses vy, 006, 09.
7 is selected, the write address 004.005 and the read addresses 401 and 402 operate on the read/write memory circuit 2 without affecting each other. Moreover, the write control signal makes writing possible only for the word selected by the write address.
診断信号008が1のときは読出アドレス切替回路4は
読出アドレス401,402に書込アドレス格納回路4
2.t3を選択するので、読出ア・ドレス401.40
2は常に書込動作を行った最新の書込アドレスを示して
いる。したがって、読出/書込メモリ回路2に対しては
書込アドレスが伺であれあるデータが書込まれると次に
書込まれるまでそのデータが読出され続ける。あたかも
読出/書込メモリ回路1は書込アドレス、続出アドレス
のない単なるレジスタのように見える。そのうえ、お断
信号が1のときは書込制、−御信号が全ワードに対して
書込可能となり、書込アドレスで示されたワード以外は
エクスクル−シブ・ノアゲートにより入力データがすべ
て反転する。つまり、診断信号が1のとき(診断中)は
書込まれたワードは次の書込までは読出され続け、しか
も他のワードはすべて書込まれたワードのデータの反転
した値である。When the diagnostic signal 008 is 1, the read address switching circuit 4 selects the read addresses 401 and 402 from the write address storage circuit 4.
2. Since t3 is selected, the read address is 401.40.
2 always indicates the latest write address where a write operation was performed. Therefore, once certain data is written to the read/write memory circuit 2, regardless of the write address, that data continues to be read until the next write. It appears as if the read/write memory circuit 1 is just a register without a write address or subsequent address. Furthermore, when the prohibition signal is 1, the write control and - control signals enable writing to all words, and all input data is inverted by the exclusive NOR gate except for the word indicated by the write address. . That is, when the diagnostic signal is 1 (during diagnosis), the written word continues to be read in the next write, and all other words are inverted values of the data of the written word.
このことはスキャンイン/アウトによるシフトバス方式
の診断における読出/書込メモリ回路の故障検出に有効
である。複数のレジスタをつなぐシフトパスの途中に読
出/書込メモリ回路がはいった場合、書込アドレスと読
出アドレスとの不一致、が生じるとこの読出/書込メモ
リ回路でシフトバスが中断してしまう恐れがあり、従来
はアドレス固定を行い、複数ワード中の1ワードのみを
診断中にはアクセスしていたが、本発明によれば、全フ
ードをアクセス可能になり、しかも、書込アドレスによ
って選ばれたワードとその他のワードは常に書込まれる
データが反転していることにより、該読出/書込メモリ
回路は診断中に全ワード、全アドレスの試験をランダム
に実行することになる。This is effective for detecting failures in read/write memory circuits in shift bus type diagnosis using scan-in/out. If a read/write memory circuit is inserted in the middle of a shift path that connects multiple registers, there is a risk that the shift bus will be interrupted at this read/write memory circuit if a mismatch between the write address and the read address occurs. Conventionally, the address was fixed and only one word out of multiple words was accessed during diagnosis, but according to the present invention, all hoods can be accessed, and moreover, the address is fixed and only one word out of multiple words is accessed during diagnosis. Because words and other words are always written with inverted data, the read/write memory circuit randomly tests all words and addresses during diagnosis.
(7)発明の効果
本発明は以上説明したように、診断時に書込アドレスを
格納して読出アドレスとする回路と書込アドレスで示さ
れるワードとその他のワードと常に書込データを反転す
る回路とをシフトバスをもつメモリ回路に付加するため
、書込アドレス全ランダムに変えられるシフトバスでの
診断が可能)なり、メモリ回路の全アドレス、全ワード
の診断ができる効果を有するものである。(7) Effects of the Invention As explained above, the present invention has a circuit that stores a write address and uses it as a read address during diagnosis, and a circuit that always inverts the word indicated by the write address and other words and the write data. Since this is added to a memory circuit having a shift bus, it is possible to perform diagnosis using a shift bus in which all write addresses can be randomly changed), and has the effect of being able to diagnose all addresses and all words of the memory circuit.
第1図は本発明の一実施例を示すブロック図、第2図は
第1図の読出/壱−込メモリ回路の詳細図、第3図は第
1図のデータ切替回路の詳細図、第4図は第1図の読出
アドレス切替回路の詳細図、第5図は第1図の書込制御
回路の詳細図である。
1・・・読出/書込メモリ回路
2・・・読出/書込メモリ回路
3・・・データ切替回路
4・・・読出アドレス切替回路
、5・・・書込制御回路
21.52・・・デコーダ
22.23,24.25・・・メモリ回路26、27.
2B、 29.2A、 31.62.55.34゜41
.44,45,46,47,48,49,51,54゜
56、58.5A、 5B、 5C,sD、 5E・・
・NANDゲート
42.43・・・書込アドレス格納回路53.55,5
7゜59・・・エクスクル−シブ・ノアケート特許出願
人 日゛本電気株式会社1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a detailed diagram of the read/load memory circuit of FIG. 1, and FIG. 3 is a detailed diagram of the data switching circuit of FIG. 4 is a detailed diagram of the read address switching circuit of FIG. 1, and FIG. 5 is a detailed diagram of the write control circuit of FIG. 1. 1... Read/write memory circuit 2... Read/write memory circuit 3... Data switching circuit 4... Read address switching circuit, 5... Write control circuit 21.52... Decoders 22.23, 24.25...memory circuits 26, 27.
2B, 29.2A, 31.62.55.34°41
.. 44, 45, 46, 47, 48, 49, 51, 54゜56, 58.5A, 5B, 5C, sD, 5E...
・NAND gate 42.43...Write address storage circuit 53.55, 5
7゜59...Exclusive Noake Patent Applicant Nippon Electric Co., Ltd.
Claims (1)
ードをシフトパスとして使用し、シフト信号によってシ
フトパスと通常のパスとを切替える入力データ切替回路
を有する読出/書込メモリ回路において、前記メモリ回
路の書込時に書込アドレスを格納する回路と、診断信号
によって診断のときは前記メモリ回路の読出アドレスと
して前記格納回路を選び、非診断のときは通常の読出ア
ドレスを選ぶ選択回路と、前記診断信号によって診断の
ときは書込アドレスで示された以外の全ワードにも書込
アドレスで示されたワードに書込まれる入力データの反
転値を書込み、非診断のときは書込アドレスに示された
ワードだけに入力データを書込む書込制御回路とを内蔵
したことを特徴とする読出/書込メモリ回路。(1) In a read/write memory circuit comprising a plurality of words of memory, using one word of the memory as a shift path, and having an input data switching circuit that switches between the shift path and the normal path by a shift signal, the memory circuit a selection circuit that selects the storage circuit as the read address of the memory circuit when diagnosing based on a diagnostic signal and selects a normal read address when not diagnosing; When diagnosing, the signal writes the inverted value of the input data written to the word indicated by the write address to all words other than those indicated by the write address, and when not diagnosing, the inverted value of the input data written to the word indicated by the write address is written to all words other than the one indicated by the write address. A read/write memory circuit comprising a built-in write control circuit that writes input data only to words that have been read.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57055131A JPS58175192A (en) | 1982-04-02 | 1982-04-02 | Read/write memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57055131A JPS58175192A (en) | 1982-04-02 | 1982-04-02 | Read/write memory circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58175192A true JPS58175192A (en) | 1983-10-14 |
Family
ID=12990218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57055131A Pending JPS58175192A (en) | 1982-04-02 | 1982-04-02 | Read/write memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58175192A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62180593A (en) * | 1986-02-04 | 1987-08-07 | Nec Corp | Semiconductor memory device |
JPS6484342A (en) * | 1987-09-25 | 1989-03-29 | Mitsubishi Electric Corp | Test circuit for integrated circuit |
-
1982
- 1982-04-02 JP JP57055131A patent/JPS58175192A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62180593A (en) * | 1986-02-04 | 1987-08-07 | Nec Corp | Semiconductor memory device |
JPS6484342A (en) * | 1987-09-25 | 1989-03-29 | Mitsubishi Electric Corp | Test circuit for integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960000346B1 (en) | Semiconductor integrated circuit | |
KR900004886B1 (en) | Memory testcricuit | |
KR100327136B1 (en) | Semiconductor memory device and parallel bit test method thereof | |
KR100374312B1 (en) | Semiconductor memory device with output data scramble circuit | |
US8156391B2 (en) | Data controlling in the MBIST chain architecture | |
Sachdev | Open defects in CMOS RAM address decoders | |
KR100718518B1 (en) | Semiconductor memory device | |
JP3645294B2 (en) | Multi-bit test circuit for semiconductor memory device | |
JP2921505B2 (en) | Semiconductor storage device | |
US7246279B2 (en) | Static random access memory (SRAM) unit and method for operating the same | |
US20080013389A1 (en) | Random access memory including test circuit | |
Otterstedt et al. | Detection of CMOS address decoder open faults with March and pseudo random memory tests | |
JPS61204744A (en) | RAM built-in LSI with diagnostic function and its diagnostic method | |
JPS58175192A (en) | Read/write memory circuit | |
JPH05314023A (en) | Method and system for fault range testing memory | |
JPH0812226B2 (en) | Semiconductor device | |
JPH0442500A (en) | Semiconductor memory device | |
JPS646489B2 (en) | ||
JPS6011953A (en) | Memory device | |
JP3771393B2 (en) | SEMICONDUCTOR MEMORY DEVICE, CIRCUIT BOARD MOUNTING THIS SEMICONDUCTOR MEMORY DEVICE, AND CONNECTION TEST METHOD FOR THIS SEMICONDUCTOR MEMORY DEVICE | |
JPH0359898A (en) | Random access memory | |
JP2551601B2 (en) | Memory check circuit | |
JPH05165734A (en) | Fixed fault diagnostic device for main storage device | |
KR900008638B1 (en) | Integrated circuit with memory self-test | |
JPS6045452B2 (en) | memory circuit |