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JPS58172297A - Manufacture of sic whisker - Google Patents

Manufacture of sic whisker

Info

Publication number
JPS58172297A
JPS58172297A JP57051391A JP5139182A JPS58172297A JP S58172297 A JPS58172297 A JP S58172297A JP 57051391 A JP57051391 A JP 57051391A JP 5139182 A JP5139182 A JP 5139182A JP S58172297 A JPS58172297 A JP S58172297A
Authority
JP
Japan
Prior art keywords
cullet
mixture
carbon black
raw material
sic whiskers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051391A
Other languages
Japanese (ja)
Other versions
JPS5945640B2 (en
Inventor
Jitsuo Doi
土肥 実夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP57051391A priority Critical patent/JPS5945640B2/en
Publication of JPS58172297A publication Critical patent/JPS58172297A/en
Publication of JPS5945640B2 publication Critical patent/JPS5945640B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To inexpensively manufacture SiC whiskers in a high formation yield, by mixing cullet or a cullet-silica sand mixture with furnace carbon black and by heating the prepared mixture in a nonoxidizing atmosphere. CONSTITUTION:Cullet contg. SiO2 and Na2O as principal components or a mixture of the cullet with silica sand is used as a starting material for a silicon source. The starting material is mixed with 60-400wt% furnace carbon black having >=50ml/100g DBP oil absorption and a grain aggregated structure, and the mixture is heated at 1,300-1,800 deg.C in a nonoxidizing atmosphere to manufacture SiC whiskers. The cullet is pulverized scrap glass and is very inexpensive. It has an almost uniform composition and almost uniform properties when regularly manufactured products are used as a source, so SiC whiskers of high performance can be manufactured in a high yield using inexpensive starting materials.

Description

【発明の詳細な説明】 81Cウイスカーは、比強度、比弾性率、耐熱性、化学
的安定性などの廁に優れた物性を有することから、金属
あるいはグラスチックの複合強化材として期待されてい
るが、これが広く実用化されるためkは材料価格が低摩
でなければならない。
[Detailed description of the invention] 81C whiskers have excellent physical properties such as specific strength, specific modulus of elasticity, heat resistance, and chemical stability, so they are expected to be used as composite reinforcing materials for metals or glass. However, in order for this to be widely put into practical use, the material cost of k must be low.

本発明は、極めて安1i&けい素1[J[科を用いて高
収率にBICウィスカーを得る方法Kgするもので、低
摩原価による高品位81(ウィスカー製造法の提供を目
的とする。
The present invention provides a method for obtaining BIC whiskers in high yield using extremely cheap 1i&silicon 1[J[kg], and aims to provide a method for producing high quality 81 (whiskers) at a low manufacturing cost.

すなわち、本発明は、810.およびJJa、o を主
成分とするカレットまたはこれとけい砂との混合物をけ
い素置原料とし、これに炭材としてDBP吸油量50a
17100り以上の粒子凝集構造を有するファーネスカ
ーボンブラックを60−400重量重量側合で混合し九
のち非酸化性′Il囲気下で1300〜1809℃の温
度に加熱することを構成的特徴とする。
That is, the present invention provides 810. Cullet containing JJa,o as the main component or a mixture of this and silica sand is used as a silicon raw material, and DBP oil absorption of 50a is added to this as a carbon material.
The structural feature is that furnace carbon black having an agglomerated structure of particles of 17,100 or more is mixed at a concentration of 60-400% by weight and then heated to a temperature of 1300-1809° C. under a non-oxidizing atmosphere.

叶い嵩源Il科に供されるカレットは、通常、ガラス製
造時Kg材料の1つとしてパッチに温合される屑ガラス
の粉砕物で、極めて安価な工業材である。この構成成分
はガ、9スの組成によって変動するが、定常生産品をソ
ースとするものは組成、成分および性質がほとんど一定
である。本脅明では、1310.および引hOを主成分
とする組成のカレットが選択使用され、とくに少(と%
50@t)810嘗成分を含む粒度150メツシユ以下
の微粉末が有効に適用される。
The cullet used in the production of glass is usually crushed glass scrap that is heated into patches as one of the Kg materials used in glass manufacturing, and is an extremely inexpensive industrial material. This component varies depending on the composition of the gas, but the composition, components, and properties of those sourced from regularly produced products are almost constant. In this threat, 1310. Cullet with a composition mainly composed of
50@t) A fine powder containing 810 mm of ingredients and having a particle size of 150 mesh or less is effectively applied.

縦材には、石油系あるいは石炭系O重質炭化水素油を熱
分解して得られる7アーネスカーボンプラツクのうちス
トラフチア−0iltIIIとなるDBPa重量が50
m/100f以上のものが使用される。ファーネスカー
ボンプラッタは、コークス粉、黒鉛粉のような通常の炭
材物質とは異質の表面性状と粒子構造を有してお転それ
自体炭材としての適格性を備えているが、と<KDBP
吸油量40m/100p以上の粒子凝集構造をもつもの
は、81Cクイスカーの生成反応を3遭、円滑に進行さ
ぜると共に結晶の伸長に必要な内4192間を形成する
ために有効に作用して、生成収率O増大化をもたらす。
For the vertical members, 50 DBPa weight of Straftia-0iltIII of 7 Arness carbon plaque obtained by thermally decomposing petroleum-based or coal-based O heavy hydrocarbon oil was used.
m/100f or more is used. Furnace carbon platter has a surface texture and particle structure that is different from ordinary carbonaceous materials such as coke powder and graphite powder, and is itself qualified as a carbonaceous material.
Particles with an agglomerated structure with an oil absorption of 40 m/100 p or more undergo the 81C cuisker production reaction smoothly and act effectively to form the 4192 spaces necessary for crystal elongation. , resulting in an increase in production yield O.

ファーネスカーボンプラッタ炭材は、けい素置原料に対
し60〜400重量嘩の割合で混合する必要があわ、こ
の配合範囲を下廻ると微粒子状の81 CwI晶が多量
に生成し、実質的にウィスカー収率の減退を摺〈。また
、王妃4INを越える炭材の配合はウィスカー収率の増
大化には作用せず、寧ろ残留炭材の増加に伴う後旭埋を
煩IIKする。
The furnace carbon platter carbon material needs to be mixed with the silicon raw material at a ratio of 60 to 400% by weight.If the mixing ratio is below this range, a large amount of fine particulate 81 CwI crystals will be generated, which will essentially turn into whiskers. Printing the decline in yield. In addition, blending more than 4 IN of carbonaceous material does not work to increase the whisker yield, but rather makes the after-asahi burial due to the increase in the residual carbonaceous material more difficult.

けい素線原料と炭材は、十分均一に温合する。The silicon wire raw material and the carbon material are heated sufficiently and uniformly.

該原料系には、更に生成空間形成材としてMaCl、N
aF、 KCIなどのアルカリ金属ハロゲン化物または
MPCI、 、CaF、などのアルカリ土類金属ハロゲ
ン化物を共存させておくと、加熱時、原料系内部にウィ
スカー成長に有効な空間を形成するとともKけい素線J
11.@の気化を促進する7ラツクスとして機能し、生
成収率と結晶の伸長を一層助長する材 効1を与える0これらの生成空間形成績は、けい素11
[原料に対し45〜200Jl量憾の配合比で原料系に
混合するか、底部に歓きつめる等の手段によって共存さ
せる。
The raw material system further contains MaCl and N as generation space forming materials.
If an alkali metal halide such as aF, KCI or an alkaline earth metal halide such as MPCI, CaF, etc. is present in the coexistence, a space effective for whisker growth will be formed inside the raw material system during heating. line J
11. It functions as a 7 lux that promotes the vaporization of silicon, giving a material effect of 1 that further promotes the production yield and crystal elongation.
[It is mixed into the raw material system at a mixing ratio of 45 to 200 Jl to the raw material, or it is made to coexist by means such as collecting it at the bottom.

原料物質は、黒鉛のような耐熱性材料で構成された反応
容ii)に充填したのち加熱される。反応容器の加熱は
、例えば周囲をコークス粒などのカーlンパツ中ンダ材
で被包して通電加熱する方法を用い、非酸化性謬囲気下
で1500−1800℃、望ましくは1500〜!15
0℃の温度に少くとも2時間像持することKよ−Thζ
表われる。
The raw material is charged into a reaction volume ii) made of a heat-resistant material such as graphite and then heated. The reaction vessel is heated to 1500-1800° C., preferably 1500° C., in a non-oxidizing atmosphere by wrapping the surrounding area with a curling material such as coke grains and heating with electricity. 15
Keep the image at a temperature of 0°C for at least 2 hours.
appear.

加熱過堝で原料物質中のけい素成分と炭材成分は気相反
応により黴小繊錯状の81Gウイスカーに転化し、最終
的にカーlノブラック粒構造造O内部あるいは相互空間
の全域に夏って縞状KIF生する。
In the heating bath, the silicon component and the carbonaceous component in the raw materials are converted into 81G whiskers in the form of small, fibrous complexes through a gas phase reaction, and finally they are formed inside the carbon black grain structure or throughout the mutual space. In summer, striped KIF grows.

生成物中Kfi奮する未反応の縦材成分は、焼却処理に
より除去する。
The unreacted stringer components in the product are removed by incineration.

焼却処11後の生成物は、少量の微粒子状8iCを會む
ほかは全て淡緑白色を呈するStCウィスカーで、けい
素置原料に対する生成収率は環鍮収皐に近似する。まえ
、ウィスカーの性状は、直通0.2−〇、5μ園、憂さ
50〜500μ講の良好なアスペクト比をもつ格子欠陥
のないθ型単結晶である。
The products after the incineration step 11 are all pale green-white StC whiskers except for a small amount of particulate 8iC, and the production yield with respect to the silicon-based raw material is close to that of ring brass agglomeration. The properties of the whisker are a θ-type single crystal with no lattice defects and a good aspect ratio of 0.2-0, 5 μm, and 50-500 μm.

このように重置@によれば、極めて安価なけい累am衿
を用いてI4性絽の81Cウイスカーを生成収率よく製
造することができるから、工業的規模KsPいて低JI
価に生産することができる。
In this way, according to Jujoi@, it is possible to produce 81C whiskers of I4 quality with good yield using extremely cheap aluminum laminates, so it can be produced on an industrial scale with low JI.
can be produced at low prices.

以下、零発剖を実施例に基いて説明する。Hereinafter, zero anatomy will be explained based on examples.

実施例!。Example! .

810.75%、Ma、0 24%、その他CaO、ム
l!、0.などの成分1嘔を含有する組成のカレット(
粒度150メツシユ以下)をけい素IIJl[1iIと
し、これに炭材としてDBP吸油量(J工8−ム法)1
50d/100y、よう素吸着量104q/pの特性を
有するエエ8ムF−Hs級7アーネスカーボンブラツク
(a8mA875H’、東海カーポス樽勇〕を配合比率
を変えて十分均−KA合した。
810.75%, Ma, 0 24%, other CaO, Mul! ,0. Cullet with a composition containing one component such as
(particle size of 150 mesh or less) was made into silicon IIJl [1iI], and DBP oil absorption (J method 8-me method) was added to this as a carbon material.
A8M F-Hs class 7 Arness carbon black (a8mA875H', Tokai Capos Taruyuu) having the characteristics of 50d/100y and iodine adsorption amount of 104q/p was sufficiently uniformly mixed with different blending ratios.

ついで混合原料の各50.Ofを内11701111%
毫さ150聰の高純度黒鉛勇反応容器に緩く充填し、反
応#器の上部に悪鉛蓋を付してアチソン蓋電気炉に移し
たのち、屑−をコークス粒バッキングで被包した。炉を
通電昇温し、炉内を非酸化性#囲気に保持しながら16
50℃の温度に4時間加熱して反応を完結し良。
Next, 50% of each of the mixed raw materials. Of 11701111%
The waste was loosely filled into a high-purity graphite reaction vessel with a capacity of 150 tons, a bad lead lid was attached to the top of the reaction vessel, and the waste was transferred to an Acheson lid electric furnace, and the waste was encapsulated with a coke grain backing. The furnace was energized to raise its temperature, and the inside of the furnace was kept in a non-oxidizing atmosphere for 16 hours.
The reaction was completed by heating to a temperature of 50°C for 4 hours.

を添加して温合共存さぜたOち実施例1と同一条件で加
島処履し丸。
The Kashima-treated karimaru was heated and mixed under the same conditions as in Example 1.

生成した1i11Cウイスカーは実施g41と同様のβ
置主体ON粋な単結晶であつえが、xaclsM1pC
4,の共存比率がけい素裸原料に対して45〜200重
量−の範囲KThいて生成反応が改善され、アスベタト
比の増大と若干の収率向上傾向が認められ丸、これらの
結果を表IK示し丸。
The generated 1i11C whisker has β similar to that of implementation g41.
Atsue is a stylish single crystal with main body ON, xaclsM1pC
When the coexistence ratio of 4. was in the range of 45 to 200% by weight relative to the bare silicon raw material, the production reaction was improved, and an increase in the asbetato ratio and a slight tendency for yield improvement were observed.These results are shown in Table IK. Circle.

なお、1iar、 Car、等そO倫のアルカリ金属t
えはアルカリ土類金属ハロゲ/化物を温合し丸場会にも
、大略同様の結果が得られた。
In addition, alkali metals such as 1iar, Car, etc.
Roughly similar results were obtained when alkaline earth metal halides/compounds were heated in Maruba.

Claims (1)

【特許請求の範囲】 L 1310.およびHa、Oを主成分とするカレット
ま丸はこれとけい砂との混合物をけい素置原料とし、こ
れに炭材としてDBP徴油量50m/100j1以上O
粒子凝集構造を有する7アーネスカーボンブラツクを6
0〜400重量IJIIの割合で混合したのち非酸化性
雰囲気下で1300〜1800℃の温度に加熱すること
を特徴とする81Cウイスカーの製造方法。 2けい素置原料に対し、45〜200重量参のアルカリ
金属またはアルカリ土類金属のハロゲン化物を共存させ
る特許請求の範囲JI11項記載の81Cクイスカーの
製造方法。
[Claims] L 1310. And cullet mamaru whose main components are Ha and O is a mixture of this and silica sand as a silica raw material, and DBP oil collecting amount of 50 m/100 j1 or more is added to this as a carbon material.
7 Arnes carbon black with particle agglomeration structure 6
A method for producing 81C whiskers, which comprises mixing at a ratio of 0 to 400 weight IJII and then heating to a temperature of 1300 to 1800°C in a non-oxidizing atmosphere. 2. The method for producing 81C Quisker according to Claim JI 11, wherein 45 to 200 weight parts of an alkali metal or alkaline earth metal halide is co-existed with the 2-silicon raw material.
JP57051391A 1982-03-31 1982-03-31 Method for manufacturing SiC whiskers Expired JPS5945640B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051391A JPS5945640B2 (en) 1982-03-31 1982-03-31 Method for manufacturing SiC whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051391A JPS5945640B2 (en) 1982-03-31 1982-03-31 Method for manufacturing SiC whiskers

Publications (2)

Publication Number Publication Date
JPS58172297A true JPS58172297A (en) 1983-10-11
JPS5945640B2 JPS5945640B2 (en) 1984-11-07

Family

ID=12885635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051391A Expired JPS5945640B2 (en) 1982-03-31 1982-03-31 Method for manufacturing SiC whiskers

Country Status (1)

Country Link
JP (1) JPS5945640B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573444A1 (en) * 1984-11-21 1986-05-23 Tokai Carbon Kk PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE FIBERS IN SILICON CARBIDE
FR2611694A1 (en) * 1987-02-23 1988-09-09 Pechiney Electrometallurgie PROCESS FOR THE PREPARATION OF SILICON CARBIDE TRICHITES
US4917866A (en) * 1987-11-12 1990-04-17 Toyota Jidosha Kabushiki Kaisha Production process of silicon carbide short fibers
CN111646471A (en) * 2020-06-22 2020-09-11 黑龙江冠瓷科技有限公司 Preparation method of nano silicon carbide particles based on KCl shape regulator
CN111825093A (en) * 2020-07-31 2020-10-27 黑龙江冠瓷科技有限公司 A kind of preparation method of SiC nano powder particles

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279421A (en) * 1986-05-28 1987-12-04 Matsushita Graphic Commun Syst Inc Electronic filing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573444A1 (en) * 1984-11-21 1986-05-23 Tokai Carbon Kk PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE FIBERS IN SILICON CARBIDE
FR2611694A1 (en) * 1987-02-23 1988-09-09 Pechiney Electrometallurgie PROCESS FOR THE PREPARATION OF SILICON CARBIDE TRICHITES
US4917866A (en) * 1987-11-12 1990-04-17 Toyota Jidosha Kabushiki Kaisha Production process of silicon carbide short fibers
CN111646471A (en) * 2020-06-22 2020-09-11 黑龙江冠瓷科技有限公司 Preparation method of nano silicon carbide particles based on KCl shape regulator
CN111646471B (en) * 2020-06-22 2021-12-17 内蒙古海特华材科技有限公司 Preparation method of nano silicon carbide particles based on KCl shape regulator
CN111825093A (en) * 2020-07-31 2020-10-27 黑龙江冠瓷科技有限公司 A kind of preparation method of SiC nano powder particles

Also Published As

Publication number Publication date
JPS5945640B2 (en) 1984-11-07

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