JPS58170210A - Manufacturing method of crystal resonator - Google Patents
Manufacturing method of crystal resonatorInfo
- Publication number
- JPS58170210A JPS58170210A JP5299882A JP5299882A JPS58170210A JP S58170210 A JPS58170210 A JP S58170210A JP 5299882 A JP5299882 A JP 5299882A JP 5299882 A JP5299882 A JP 5299882A JP S58170210 A JPS58170210 A JP S58170210A
- Authority
- JP
- Japan
- Prior art keywords
- crystal resonator
- oscillator
- package
- electrode film
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は衛星通信、海底中継器等に搭載され、高い精度
が要求される高安定、水晶振動子に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a highly stable crystal resonator that is installed in satellite communications, submarine repeaters, etc. and requires high accuracy.
(b) 技術の背景
通常高安定水晶振動子に使用する水晶片は丸形又は矩形
板の片面を球面加工した厚みすべり振動モードを用いる
。(b) Background of the technology Usually, the crystal piece used in a highly stable crystal resonator uses a thickness-shear vibration mode in which one side of a round or rectangular plate is processed into a spherical surface.
衛星通信、海底中継器等の過酷な環境条件下でも、牛永
久的長時間の周波数安定度とともに短時間の周波数安定
度も必要で立上り特性の早い水晶振動子が要求される。Even under harsh environmental conditions such as satellite communications and submarine repeaters, permanent long-term frequency stability as well as short-term frequency stability is required, and a crystal oscillator with fast rise characteristics is required.
このよう4高安定度水晶振動子として水晶結晶軸からの
切出方位を光軸の回りに回転させて形成するATカット
又はITカット等の二回転Y板系の水晶片が用いられる
。また外界の温度変化にも対応可能な恒温槽に収容され
て用いられ、振動源として安定性高性能が要請される。As such a four-high stability crystal resonator, a two-rotation Y plate type crystal piece, such as an AT cut or an IT cut, which is formed by rotating the cutting direction from the crystal crystal axis around the optical axis, is used. Furthermore, it is used housed in a thermostatic chamber that can cope with temperature changes in the outside world, and requires stability and high performance as a vibration source.
(C) 従来技術と問題点
電気的特性に優れた振動子を得るには大きな水晶片が必
要であり一方機器は多重化、小型化が進み水晶振動子も
より小塵化が要求される。この九め小型化に有利な厚み
丁べ9振動子では水晶片板厚(T)と球面の等価的曲率
半径(R)のパラメータで振動変位分布が求められるか
ら周Be帯域又は高調波振動(オーバトーン)で励振す
る水晶片を研磨形成して精製される。(C) Prior Art and Problems In order to obtain a resonator with excellent electrical characteristics, a large crystal piece is required.On the other hand, as devices become more multiplexed and smaller, crystal resonators are also required to be made smaller. In this nine-thickness resonator, which is advantageous for miniaturization, the vibration displacement distribution is determined by the parameters of the crystal plate thickness (T) and the equivalent radius of curvature (R) of the spherical surface, so the circumferential Be band or harmonic vibration ( It is refined by polishing and forming a crystal piece that is excited by an overtone.
形成された水晶片の両面に電極膜を蒸着する。Electrode films are deposited on both sides of the formed crystal piece.
通常電極膜は金又は銀が用いられる。振動子の周波数を
調整する最終段階では周波数を測定しながら電極膜の厚
さを変えることによって行なわれん第1図の(イ)、(
ロ)図は片面を球面とした厚みすべり振動子を示す図で
あり(イ)図は上面図であり、(ロ)図は側面図を示す
。Usually, gold or silver is used for the electrode film. The final stage of adjusting the frequency of the vibrator is done by changing the thickness of the electrode film while measuring the frequency.
Figure b) shows a thickness-shear oscillator with one side spherical, figure (a) is a top view, and figure (b) is a side view.
第2図は従来の水晶振動子構成を示す図である。FIG. 2 is a diagram showing the configuration of a conventional crystal resonator.
図中1は水晶片、2は電極膜、3は金属中ヤップ、4r
iペース、5は支持板、6はリード、7Fiガラス融着
部をそれぞれ示す。In the figure, 1 is a crystal piece, 2 is an electrode film, 3 is a metal middle layer, 4r
i-Pace, 5 is a support plate, 6 is a lead, and 7Fi glass fusion part, respectively.
水晶片1の両面に電極膜を蒸着により形成し所定の周波
数調整が完了すると水晶振動子として容器に収容される
。容器は金属キャップ3とベース、1 4か
らなり・・−メチ、)シールの密封構造となる。Electrode films are formed on both sides of the crystal blank 1 by vapor deposition, and when a predetermined frequency adjustment is completed, the crystal blank 1 is housed in a container as a crystal resonator. The container consists of a metal cap 3 and a base 14, and has a sealed structure with a seal.
可撓性のある例えば洋白、りん青銅等の支持板5により
水晶振動子(水晶片1)tボンデング又は接着剤等で接
合支持させ、外部リード6に接続し、低融点ガラスで融
着封止する。内部を真空排気する場合には排気パイプを
ベース4に設けて排気後圧溶して塞ぐ。A crystal resonator (crystal piece 1) is bonded and supported by a flexible support plate 5 made of nickel silver, phosphor bronze, etc. using bonding or adhesive, connected to an external lead 6, and fused and sealed with low melting point glass. Stop. When the inside is to be evacuated, an exhaust pipe is provided on the base 4, and after the exhaust is evacuated, it is closed by pressure melting.
しかしこの構造では組立後の特性調整は不可能である。However, with this structure, it is impossible to adjust the characteristics after assembly.
また振動子が恒温槽をなす発振回路系で使用されるため
、これに対応する定量的な換算表を用いて大気中又は室
温で周波数特性試験及び調整がなされるが信頼性に欠け
る憾があった。またエージング特性に見られる電極膜の
弾性率に起因する周波数特性値の経時変化に対応でき彦
い。Furthermore, since the resonator is used in an oscillation circuit system that forms a thermostatic chamber, frequency characteristic tests and adjustments are performed in the atmosphere or at room temperature using a corresponding quantitative conversion table, but this may lack reliability. Ta. It is also able to cope with changes in frequency characteristics over time caused by the elastic modulus of the electrode film, which is seen in aging characteristics.
(d) 発明の目的
本発明は上記の点に艦み、水晶振動子を収容する容器内
で微調整が可能な電極膜形成用のスバ。(d) Object of the Invention The present invention addresses the above points and provides a substrate for forming an electrode film that can be finely adjusted within a container housing a crystal resonator.
夕機構を提供し、高安定水晶振動子を得ることを目的と
する。The purpose is to provide a crystal oscillator with high stability.
動子を密封構造の容器内に収容し、使用条件と同等に設
定され九億温槽内で精密調整すること及び前記容器はア
ルゴンガス封入口を共有する真空排気系を備え、前記水
晶振動子を保持する陽極と電極膜を形成させるターゲッ
ト陰極の両極間を電圧印加しスパッタ電極膜を積層させ
ることによって達せられる。The crystal oscillator is housed in a sealed container, set to the same conditions as the operating conditions, and precisely adjusted in a 900 million temperature bath; This is achieved by applying a voltage between the anode that holds the material and the target cathode that forms the electrode film, thereby stacking the sputtered electrode films.
(f) 発明の実施例
第3図は本発明の一実施例である水晶振動子の構成を示
す図である。片面を球面加工した厚みすべり振動子11
0両面に金(Au )で成膜された電極膜を形成させ、
可撓性豊かなりん青銅等の支持板15及び外部リード1
6で支持固定させて容器に収容する。(f) Embodiment of the invention FIG. 3 is a diagram showing the structure of a crystal resonator which is an embodiment of the invention. Thickness shear vibrator 11 with one side spherically processed
An electrode film made of gold (Au) is formed on both sides of the
Support plate 15 made of highly flexible phosphor bronze, etc. and external lead 1
It is supported and fixed at step 6 and placed in a container.
容器は金属キャップ13及び絶縁性部材でなるベース1
4からなり周縁部を鑞付等でシールし密封構造とする。The container includes a metal cap 13 and a base 1 made of an insulating material.
4, and the periphery is sealed with brazing etc. to create a hermetically sealed structure.
またリード端子16を低融点ガラス17で図のように封
止固定する。Further, the lead terminal 16 is sealed and fixed with a low melting point glass 17 as shown in the figure.
−畜舎(Au)をターゲットとするターゲット電極18
を設け、また容器内を真空に減圧する排気口20にアル
ゴンガスを封入するガス流入制御及び排気減圧制御を行
うパルプ制御系21を備える。-Target electrode 18 targeting livestock shed (Au)
It also includes a pulp control system 21 that performs gas inflow control for sealing argon gas into an exhaust port 20 that reduces the pressure inside the container to vacuum, and performs exhaust pressure reduction control.
このように組立られ九水晶振動子を同一使用条件に設定
された恒温槽内で精密調整を行うものである。精密調整
は所定の周波数特性が得られるように片面の電極膜に更
に金(Au )被膜を積層させるスパッタリングによっ
て行なう。The nine-quartz crystal resonator assembled in this way is precisely adjusted in a constant temperature bath set under the same operating conditions. Precise adjustment is performed by sputtering, which further laminates a gold (Au) film on one side of the electrode film so as to obtain a predetermined frequency characteristic.
水晶振動子11をリード端子16、支持板15を介して
陽極とし、陰極をなすターゲット電極18の二極間に直
流高圧を印加する。容器内は真空に減圧されアルゴンガ
スによって置換され、ターゲラ) 19に生ずる負の直
流バイアス電圧により加速され九陽極からのアルゴンイ
オン(Ar4)が陰極に衝突してターゲット原子を九−
き出し振動子11にスパッタ膜(Au )を積層させる
ことによって精密調整を行うものである。The crystal resonator 11 is used as an anode via the lead terminal 16 and the support plate 15, and a DC high voltage is applied between the two poles of the target electrode 18 that serves as the cathode. The inside of the container is reduced to vacuum and replaced with argon gas, and the argon ions (Ar4) from the anode are accelerated by the negative DC bias voltage generated at Targetera (19) and collide with the cathode, killing the target atoms.
Precise adjustment is performed by laminating a sputtered film (Au) on the exposed vibrator 11.
このように外部条件に影響されることなく気密室でしか
も像調整を可能とするスパッタリングを繰返すことによ
υ高精度の周波数特性を有する高安定水晶振動子を得る
ことができる。In this way, by repeating sputtering in an airtight chamber and allowing image adjustment without being affected by external conditions, it is possible to obtain a highly stable crystal resonator with υ highly accurate frequency characteristics.
第4図は本発明の一実施例であるパルプ制御系を示すブ
ロック図である。FIG. 4 is a block diagram showing a pulp control system according to an embodiment of the present invention.
アルゴンガス(Ar)封入パイプ22に設けたバルプv
6を閉じ、水晶振動子取付用チャンバ23を真空排気す
る。パルプvlで粗引き後拡散ポンプ24でV2 、V
3バルブを開きパルプ1を閉じてロータリポンプ25に
より高真空に排気する。A valve v provided in the argon gas (Ar) sealed pipe 22
6 is closed, and the crystal resonator mounting chamber 23 is evacuated. After roughing with pulp vl, use diffusion pump 24 to apply V2, V
Valve 3 is opened, pulp 1 is closed, and the rotary pump 25 is evacuated to high vacuum.
この際パルプ4は開である。一定圧に排気後パルプV3
t−適当に絞り、アルゴンガス流量調整パルプV@を開
放してアルゴンガスを導入する。At this time, the pulp 4 is open. Pulp V3 after exhausting to constant pressure
t- Squeeze appropriately, open the argon gas flow rate adjusting pulp V@, and introduce argon gas.
このように構成されるパルプ制御系を用いスパッタ膜を
生成させ調整完了後はアルゴンガスを排気し一定圧に減
圧し排気口(第3図20参照)t−圧溶して塞ぐことに
より気密封止水晶振動子を得る0
印加電圧はDC500V、5mA数秒間スパッタを繰返
し、目的の周波数に調整する。調整範囲は略15〜20
ppm であり、大気に露出することなく容器内を高真
空に排気、ベーキングするので高1 精度lpp
m以下の調整ができターゲット電極(第3図18参照)
を内臓したま\で封止されるが特性上影醤はなく安定度
Fi5X 10 pprrB/decadeが得られ
た。A sputtered film is generated using the pulp control system configured as described above, and after the adjustment is completed, the argon gas is exhausted, the pressure is reduced to a constant pressure, and the exhaust port (see Fig. 3, 20) is sealed by dissolving it in an airtight manner. Obtaining a quartz crystal resonator 0 The applied voltage is 500 VDC, 5 mA, and sputtering is repeated for several seconds to adjust to the desired frequency. Adjustment range is approximately 15-20
ppm, and since the inside of the container is evacuated and baked to a high vacuum without being exposed to the atmosphere, the accuracy is 1 ppm.
Target electrode that can be adjusted below m (see Fig. 3, 18)
Although it was sealed with a thermoplastic resin, there was no shadow due to its characteristics, and a stability of Fi5X 10 pprrB/decade was obtained.
(2))発明の効果
以上詳細に説明し丸ように本発明の水晶振動子により従
来に比し高安定特性が得られ、しかも使用条件と略同−
に設定された恒温槽で像調整が行われるからよシ信頼性
を向上させる効果がある。(2)) Effects of the Invention As has been explained in detail above, the crystal resonator of the present invention provides highly stable characteristics compared to conventional ones, and moreover, the conditions of use are approximately the same.
Since image adjustment is performed in a constant temperature bath set at
第1図の(イ)、(ロ)図は片面を球面とする厚みすべ
9振動子を示す図、(イ)図は上面図、(ロ)図は側面
を示す図、第2図は従来の水晶振動子構成を示す図、w
J3図は本発明の一実施例である水晶振動子構成を示す
図、第4図は本発明の一実施例であるバルブ制御系管示
すプロ、り図である。図において11は水晶振動子、1
3は金属キャップ、14はペース、15は支持板、16
はリード端子、17は低融点ガラス、18はターゲット
電極、19はターゲット、20は排気口、21はパルプ
制御系、22はアルゴンガス封入パイプ、23はチャン
バ、24は拡散ポンプ、25はロータリポンプ、V工〜
v6パルブを示す。
代−4弁理士 松 岡 宏四五!鴻
、イ、 )ff/図 1゜。
矛2図
矛7図
4/
第4図Figures (A) and (B) in Figure 1 show a 9-thickness resonator with one side spherical, (A) is a top view, (B) is a side view, and Figure 2 is a conventional Diagram showing the crystal oscillator configuration of w
Figure J3 is a diagram showing the configuration of a crystal oscillator according to an embodiment of the present invention, and Figure 4 is a diagram showing a valve control system pipe according to an embodiment of the present invention. In the figure, 11 is a crystal oscillator, 1
3 is a metal cap, 14 is a pace, 15 is a support plate, 16
1 is a lead terminal, 17 is a low melting point glass, 18 is a target electrode, 19 is a target, 20 is an exhaust port, 21 is a pulp control system, 22 is an argon gas filled pipe, 23 is a chamber, 24 is a diffusion pump, 25 is a rotary pump , V engineering ~
Indicates v6 pulv. Sub-4 Patent Attorney Hiroshi Matsuoka! Ko, I, )ff/Figure 1゜. 2 figures, 7 figures, 4/ Figure 4
Claims (2)
みすべり水晶振動子であって、粗調整された該水晶振動
子を密封構造の容器内に収容し、使用条件と同勢に設定
された恒温槽内で精密調整してなることを特徴とする水
晶振動子の製造方法。(1) An AT-cut thickness sliding crystal resonator with one or both sides forming a spherical surface, the coarsely adjusted crystal resonator is housed in a sealed container and kept at a constant temperature set to the same conditions as the operating conditions. A method for manufacturing a crystal resonator, characterized in that the crystal resonator is precisely adjusted in a bath.
共有する真空排気系を備え、前記水晶振動子を保持する
陽極と電極膜を形成するターゲット陰極の二極間を電圧
印加してスパッー電極膜を積層させてなることを特徴と
する特許請求の範囲第1項記載の水晶振動子の製造方法
。(2) The container with the above-mentioned sealed structure is equipped with a vacuum exhaust system that shares an argon gas filling port, and a voltage is applied between the anode that holds the crystal resonator and the target cathode that forms the electrode film to sputter the electrode film. A method for manufacturing a crystal resonator according to claim 1, characterized in that the crystal resonator is laminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5299882A JPS58170210A (en) | 1982-03-31 | 1982-03-31 | Manufacturing method of crystal resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5299882A JPS58170210A (en) | 1982-03-31 | 1982-03-31 | Manufacturing method of crystal resonator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58170210A true JPS58170210A (en) | 1983-10-06 |
JPH029484B2 JPH029484B2 (en) | 1990-03-02 |
Family
ID=12930592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5299882A Granted JPS58170210A (en) | 1982-03-31 | 1982-03-31 | Manufacturing method of crystal resonator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58170210A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63246911A (en) * | 1986-12-22 | 1988-10-13 | レイセオン・カンパニー | Surface acoustic wave device and surface wave velocity characteristic adjustment method |
EP0580826A4 (en) * | 1992-02-14 | 1994-07-27 | Motorola Inc | Sealed electronic package providing in-situ metallization |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4724866B2 (en) * | 2003-12-19 | 2011-07-13 | 株式会社昭和真空 | Apparatus and method for adjusting frequency of piezoelectric device, and piezoelectric device |
-
1982
- 1982-03-31 JP JP5299882A patent/JPS58170210A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63246911A (en) * | 1986-12-22 | 1988-10-13 | レイセオン・カンパニー | Surface acoustic wave device and surface wave velocity characteristic adjustment method |
EP0580826A4 (en) * | 1992-02-14 | 1994-07-27 | Motorola Inc | Sealed electronic package providing in-situ metallization |
Also Published As
Publication number | Publication date |
---|---|
JPH029484B2 (en) | 1990-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5235135A (en) | Sealed electronic package providing in-situ metallization | |
JP5184142B2 (en) | Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic device, radio timepiece, and method of manufacturing piezoelectric vibrating piece | |
US4266156A (en) | Subminiature piezoelectric quartz vibrator | |
US8304965B2 (en) | Package, method for manufacturing the same, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece | |
US10263588B2 (en) | Method of manufacturing piezoelectric vibrator element, piezoelectric vibrator element, and piezoelectric vibrator | |
US8278798B2 (en) | Crystal device | |
US6606772B1 (en) | Method for manufacturing piezoelectric oscillator | |
WO2009101733A1 (en) | Piezoelectric vibrator, manufacturing method of the piezoelectric vibrator, oscillator, electronic instrument and atomic clock | |
US4454639A (en) | Method for tuning piezoelectric resonators | |
JP2009206759A (en) | Piezoelectric vibration chip, piezoelectric vibrator, oscillator, electronic apparatus, radio wave clock, and method of manufacturing piezoelectric vibration chip | |
JPS58170210A (en) | Manufacturing method of crystal resonator | |
JP2013080990A (en) | Manufacturing method of piezoelectric vibration piece, manufacturing apparatus of piezoelectric vibration piece, piezoelectric vibrator, oscillator, electronic apparatus, and atomic clock | |
WO2004100364A1 (en) | Tuning-fork piezoelectric device manufacturing method and tuning-fork piezoelectric device | |
JP2001024468A (en) | Electrode film structure of piezoelectric oscillator | |
JP2001044785A (en) | Piezoelectric vibrator | |
JP2002076815A (en) | Package structure of AT-cut piezoelectric vibrator and frequency adjustment method thereof | |
JP2024032324A (en) | monolithic crystal filter | |
JPH01209810A (en) | Piezoelectric vibrator and fine adjustment method of its frequency | |
JPH05243885A (en) | Crystal oscillator and frequency adjusting method for the crystal oscillator | |
JP2009182555A (en) | Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic device, radio timepiece, and method of manufacturing piezoelectric vibrating piece | |
JPH02179013A (en) | Crystal resonator and its manufacture | |
JPS6119138B2 (en) | ||
JP2577339Y2 (en) | Surface mount type piezoelectric vibrator | |
JP2009219088A (en) | Piezoelectric vibrating piece, piezoelectric device, and method of forming electrode | |
JP2000307367A (en) | Manufacture of crystal vibration |