JPS58167775A - Ion beam processing method - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention irradiates an ion beam onto a workpiece 1'l and detects Auger electrons that radiate from the surface of the workpiece to determine the position of the ion beam and the workpiece r1. Regarding ion beam application.

In general, liquid metal ion sources are bright and emit/V14
The energy range of the ion beam is small, and the diameter of the ion beam can be focused up to several hundred people. ), it is expected to be applied to microfabrication such as ion lithography. In order to perform fine machining with an ion beam, it is necessary to precisely align the beam and the material, as in the case of electron Y-beam exposure.In electron beam exposure, Marks are made in the shape of a C-cross or a letter by using unevenness or a foreign material on the shrine plate, and an electron beam is scanned near the I-(electronic beam) to detect reflected electrons from the material by irradiation with the electron beam 11. ,
Alternatively, the marks are detected by detecting secondary electrons, and the desired exposure is performed after adjusting the relative position between the electron beam t1 and the material. If the technology used in such electron beam exposure is applied to a fine addition T of ion beam = 11, secondary electrons will inevitably be detected since there are no reflected electrons. -) [Detection of marks will be performed.

6. The T energy of secondary electrons is weak, and in order to detect secondary electrons, an electric field is formed across the entire length of a detector such as a photomultiplier tube, and the secondary electron termination is accelerated by the electric current W. ] must be made incident on the detector with a high channel V-. However, the electric field also incorrectly deflects the primary ion beam, causing +111 T l? i make a worse. Therefore, the present invention detects the comparatively high-energy A-di I electric j' generated by primary ion beam irradiation and determines the position of the material. In the method of applying irradiation to the material 1,
A mark is placed in the vicinity of the mark, the ion beam is scanned near the mark, and the ion beam is irradiated on the mark. The ion beam addition T'fi method is used, in which the A-die electrons emitted from the 1+A part are detected, and the ion beam and the liquid 1+A material are aligned based on the detected position. This has been achieved.

The present invention will now be described in detail with reference to the drawings.

FIG. 1 is a block diagram showing an example of an ion beam processing apparatus for implementing a method based on the present invention. In the figure, 1 is the mitter that performs the ion beam, 2 is the extraction electrode,
A path is formed between the power source 1 and the lead-out electrode 2 to which a lead-out voltage 11 is applied from a lead-out power source (not shown). 3 is an electrostatic lens for converging the ion beam, and this lens is a commercially available lens (not shown).
4 is a cathode, and a small hole is made in the cathode through which the ion beam 11 passes. 1111 An acceleration type 11 is applied from an acceleration power source (not shown) for speed * filtering. One ion beam is applied to the exposed material 71 which has been
1'& vermilion objective lens, and the objective lens cloth for lens 5! A higher voltage (not shown) is applied I'
1 (Iro. 6 deflects the ion beam and directs the exposed material 7
It is an electrostatic deflection electrode for irradiating any area of the abrasive surface. 8 is an electron detection system for detecting Auger electrons generated during ion beam irradiation of the nuclear material 1'l7, and the detection system 8 is, for example, a cylindrical mirror analyzer. (OMΔ)11 and electron detector 1
The detection system 8 is connected to a control device such as an electronic meter 9.

The following 1 configuration: A liquid metal is placed in the mitter 1, and the liquid metal is heated by the heating means (not shown) of the mitter 1, and is applied to the tip of the T-mitter 1 by the extraction electrode 2. By forming a strong electric field, the liquid metal is ionized and extracted as an electric field.The ions are
The ion beam B is focused by the Y lens 3, and then passes through the cathode 4 (Fi 11) to become an ion beam 11B. , is changed according to the voltage applied to the deflection electrode 6, and as a result, the electronic measuring device 9
In response to the deflection voltage from +4, a desired area on the material 7 is exposed to the ion beam 〇) at a height of 3° C1. The relative positioning of the ion beam and the material 7 is carried out before (j).For example, a plurality of marks on the core material I+17 are formed in the shape of a single character or a single character by means of irregularities. 7. The ion beam B is scanned near the part where the mark is formed according to the command of the electron beam Ia9.

As the material 7 is irradiated with the ion beam B, waste ions A, secondary ions A, secondary electrons, etc. are emitted from the material 7! (Zuru.

Among the intervening electrons, A-ji heading towards the detection system 8
The dropout is detected by the detection system 8, and the detection system 8's CMAllG:t is applied to the material surface and is generated from the 15-resist I, = 1! It is adjusted so that only the CMA11 (this, 1
, -) (j★Separated lkoA-di■ Only electrons are detected by the detector 12
J is detected. Figure 2 (Δ) shows the concave ion beam B, and Figure 2 (B) shows the ion beam B! ,, when l (as shown by the dashed arrow, crosses the corner 10) f scans, the detection system 8 detects the
4 is shown. The Auger Jin, bow is electronic Mt.
l l! The electron 81 is supplied to the deflection electrode 6, and the electron 81 is supplied to the deflection electrode 6.
Find the position of the corner by the number. This Marky 1"
An ion beam is irradiated onto a desired area of the material F1 using the multi-nuclear mark intermediary as a reference, and a fine pattern is exposed with high precision.

However, since the A-di-electron has a relatively high T energy among secondary electrons, it depends on the light resistance of the primary ion P18.
) It is not necessary to form an electric field to extract the A-dir electrons from the sample surface which is 1 at ) to the detection system 8. Therefore,
The primary beam 11B, which is illuminated by the material surface, is not subjected to any distortion due to the electric field. Also, oats. ■- Main electron emission / [- Because the depth of the electron is shallow compared to the backscattered electron,
The surface shape can be detected with great sensitivity. Furthermore, CMΔ11 selects only Auger electrons from the C1h constant material (resist) and prevents the contamination of other unnecessary electrons.

The key is to detect a signal with a good signal-to-noise ratio.

Although the present invention has been revised above, the present invention is not limited to the above-mentioned embodiment. Although a Lumira analyzer was used, other electrostatic four-electron analyzers may also be used.Also, in the example in which F was achieved, the present invention was applied to the exposure of forest material with an ion beam. (As mentioned above, the present invention 1.1) Application of fine machining by an ion beam such as scres ion implantation. Place the mark -1, detect the 4-di-1 electrons of the silicone 11 in the corresponding part, J, bJ, and -1,1 on the base plate 1 in addition to the uneven mark. -) / The mark is formed by the substance, and the object V "(from special oats") - detects only electrons -) (, 2, h. In the embodiment, one detector was installed to detect the easy f electric current r, but by placing an additional detector on the lunar surface R; :
Is it possible to detect it even more precisely?

As shown in I above, the present invention is directed to the 4th hand in the ion beam device.
When determining the position of F+, (by shining an A beam and detecting the A-sheet electrons rescued from the material,
Determine the mark position H on the shrine surface with precision.
', it is possible to provide one law. .

Figure 1 shows an ion beam apparatus 7 for carrying out the present invention.
An example of this is shown in 4 block diagrams, and the second part is shown in 4 C showing the scanning state of the arm.

1: ■Mitter, 2: Extraction electrode, 3: Electrostatic heli lens,
4: cathode, 5: objective lens, 0: electrostatic surface electrode, 7
: Material F1.8: Detection system, 9: Electronic correction machine, 10: ζ node, 11: CMA, 12: Electronic detector.

Special agreement applicant JEOL Ltd. 1 Representative Tadao Kase 1st III

Claims (1)

[Claims] In a method of processing the material by irradiating the material with an ion beam, a mark is provided on the material, an ion beam is scanned in the vicinity of the mark, and the ion beam is irradiated with the material. Auger electronics□
1. A method of ion beam processing according to J.U.