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JPS58165363A - High voltage thyristor bulb - Google Patents

High voltage thyristor bulb

Info

Publication number
JPS58165363A
JPS58165363A JP57048601A JP4860182A JPS58165363A JP S58165363 A JPS58165363 A JP S58165363A JP 57048601 A JP57048601 A JP 57048601A JP 4860182 A JP4860182 A JP 4860182A JP S58165363 A JPS58165363 A JP S58165363A
Authority
JP
Japan
Prior art keywords
thyristor
pulp
module mount
module
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57048601A
Other languages
Japanese (ja)
Inventor
Susumu Matsumura
松村　晋
Tomohiro Marutani
丸谷　朋弘
Yoshiyuki Nishizaka
西阪　「よし」幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Electric Power Co Inc
Mitsubishi Electric Corp
Original Assignee
Kansai Electric Power Co Inc
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Electric Power Co Inc, Mitsubishi Electric Corp filed Critical Kansai Electric Power Co Inc
Priority to JP57048601A priority Critical patent/JPS58165363A/en
Publication of JPS58165363A publication Critical patent/JPS58165363A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)

Abstract

PURPOSE:To facilitate the detachment of a thyristor valve by a method wherein sliding surfaces are constituted between module mount bases which are supported by modules and insulation supporting rods, and guiding surfaces in lead-out direction are formed. CONSTITUTION:A module mount frame 11 is fixed on a module mount plate 20, and this module mount plate 20 is stacked in a plurality by the insulation supporting rods 21, and thus forms a valve unit 2. The sliding surfaces 12 of Teflon, etc. are formed on the module mount frame 11 and the module mount plate 20. The sliding surfaces 12 are adhered on the module mount plate 20, or tightened by bolts thereto, and guide the side surfaces of the module mount frame 11 by being formed in an L-shape.

Description

【発明の詳細な説明】 この発明は、敗付合に摺動部材を設けてサイリスタパル
プのモジュールの取換作業を簡便にできるようにした高
電圧サイリスタパルプＫｇＩｉする。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a high-voltage thyristor pulp KgIi in which a sliding member is provided in the losing connection to facilitate the replacement work of thyristor pulp modules.

直流送電用サイリスタバルブはサイリスタの冷却のため
Ｋ、油、水、空気などが一般的に用いられているが、絶
縁耐力の高いガス（たとえば、８Ｆ、など）を用いれば
、機器寸法が縮小され、を九、接地された容器を使用す
ることで、建物が不要となり、ｌｉｉ済性中敷地の点で
すぐれたサイリスタパルプが構成される。Thyristor valves for DC power transmission generally use K, oil, water, air, etc. to cool the thyristor, but if a gas with high dielectric strength (e.g. 8F) is used, the device size can be reduced. 9. By using a grounded container, no building is required and the thyristor pulp is constructed which is superior in terms of ease of construction and construction.

このサイリスタパルプは第１図に示すように、パルプタ
ンク１内にモジエールが複数儒積み重ねられたパルプエ
ニット２が収納畜れており、バルブタンク１内に絶縁ガ
ス３が封入されている０この絶縁ガス３はプロワ４によ
〕パルラネニット２内を通風し、その内部のサイリスタ
の情動を行う。As shown in Fig. 1, this thyristor pulp is constructed by storing a pulp unit 2 in which a plurality of mosieres are stacked in a pulp tank 1, and an insulating gas 3 sealed in a valve tank 1. 3 uses a blower 4 to ventilate the inside of the parlane knit 2, and perform the operation of the thyristor inside it.

そして、サイリスタによｐ暖められた絶縁ガス３は冷却
ａＳを介して再び冷却される。Then, the insulating gas 3 heated by the thyristor is cooled again via the cooling aS.

一方、サイリスタの寿命は１０Ｆｉｔ（故障／１０９Ｈ
Ｒ）８度で、これら電子部品を組み合わせたサイリスタ
パルプはたとえば、１〜２年程度に１個故障し光サイリ
スタ素子を取９換える必要がある。On the other hand, the lifespan of the thyristor is 10Fit (failure/109H).
R) 8 degrees, the thyristor pulp that combines these electronic components will have one failure every 1 to 2 years, and it will be necessary to replace 9 optical thyristor elements.

したがって、サイリスタパルプは簡単にそのサイリスタ
素子を取り換えられる構造をとる必要がある・また、絶
縁ガスを封入して機器のコンパクト化を図る場合には、
この取り換えのための構造もてきるだけ小さく構成する
ことが必要となる・この発明は、上記の点にかんがみな
され友もので、モジュールと絶縁支柱により支持される
モジュール取付架台間に摺動面を構成するとともに、引
き出し方向のガイド面を形成することにより、サイリス
タパルプの挿脱を容易にでき、テイリスタ素子などの電
子部品の取り換えが簡単にでき為高電圧ディリ、スタパ
ルブを提供する仁とを目的とする。Therefore, it is necessary for thyristor pulp to have a structure that allows the thyristor element to be easily replaced.In addition, when trying to make the device more compact by filling it with insulating gas,
The structure for this replacement also needs to be configured as small as possible. This invention is a companion to the above points, and includes a sliding surface between the module and the module mounting frame supported by the insulating support. By forming a guide surface in the drawing direction, it is possible to easily insert and remove the thyristor pulp, and to easily replace electronic components such as the thyristor element. shall be.

以下、この発明の高電圧サイリスタパルプの実施例につ
いて図面に基づき説明する・第２図はその一実施例にお
けるパルプユニットのモジエール：。An embodiment of the high-voltage thyristor pulp of the present invention will be described below based on the drawings. Fig. 2 shows a modière of a pulp unit in one embodiment.

一段分の横断面図で０２第３図はその側面図である・　
　　　　　　　、。02 Figure 3 is a side view of the cross-sectional view of one stage.
,.

この第２図、第３図の両図において、第１図と同一部分
には同一符号を付して述べる。図中の１はパルプタンク
であり、その内部に絶縁ガス３が封入されている・を九
、１０はモジニトルを示す。In both FIGS. 2 and 3, the same parts as in FIG. 1 are designated by the same reference numerals. In the figure, numeral 1 is a pulp tank in which an insulating gas 3 is sealed.

モジュール１０はデイリスタ素子１３と冷却フィン１４
かも構成されるサイリスタスタック１５（サイリスタパ
ルプ）と、コンデンサ、抵抗からなる分圧回路１６と点
弧回路１Ｔからなっており、これらを一体としたモジュ
ール取付枠１１では、その重量はサイリスタ票子数によ
り変化するが、一般的Ｋａ　１００１１〜数１００１ｃ
ｆトｔル。The module 10 includes a daylister element 13 and a cooling fin 14.
It consists of a thyristor stack 15 (thyristor pulp) consisting of a thyristor stack 15 (thyristor pulp), a voltage dividing circuit 16 consisting of a capacitor and a resistor, and an ignition circuit 1T.In the module mounting frame 11 that integrates these, its weight depends on the number of thyristor strips. Varies, but generally Ka 10011~1001c
f tor.

このモジュール取付枠１１はモジエール取付板２０に固
定され、このモジエール取付板２０は絶縁支柱２１によ
り複数段積み上がられ、パルプユニット２を形成してい
る。This module mounting frame 11 is fixed to a mosier mounting plate 20, which is stacked in multiple stages by insulating struts 21 to form the pulp unit 2.

上記サイリスタ素子１３は交換の九め、モジュール１０
を引き出す必要があるが、この場合、上述のように、重
量が重いから、引き出すために相当の力を要することと
なる＠たとえば、モジニー、、え１ ル取付枠１１お：よびモジエール取付板２０ともに、、
−・ 剛性のある強固な、構造とする必要があることから、金
属が使用されるが、金属同志の摺動面であれば、０．２
〜０．４ｓ度の摩擦係数であるが、テフロンなどの摺動
面１２を形成するととにより、その摩擦係数が０．０５
〜０．１程度が期待できるため、作業性が非常に向上さ
れる。The thyristor element 13 is the ninth to be replaced, and the module 10
However, in this case, as mentioned above, since the weight is heavy, considerable force is required to pull it out. Together...
- Metal is used because it needs to have a rigid and strong structure, but if it is a sliding surface between metals, it will be 0.2
The friction coefficient is ~0.4s degrees, but if the sliding surface 12 is made of Teflon or the like, the friction coefficient increases to 0.05 degrees.
~0.1 can be expected, so workability is greatly improved.

この摺動面１２はモジュール取付板２０Ｋｉ！着あるい
はボルトなどで締結畜れるとともに、「Ｌ」字形にして
モジュール取付枠１１の側面をガイドする構造としてい
るため、モジュール取付枠１１の引き出し、装着が定位
置に案内される。これにより、作業性か向上する。This sliding surface 12 is the module mounting plate 20Ki! The module mounting frame 11 can be fastened with bolts or bolts, and is shaped like an "L" to guide the side surfaces of the module mounting frame 11, so that the module mounting frame 11 can be guided to a fixed position when pulled out and installed. This improves workability.

また、摺動面１２は板状であるから、その構成寸法が小
さく、コンパクトでしかも摺動機能を有することＫなる
。さらに、金属面同志の摺動では金属粉の発生の懸念が
生じ、絶縁性能上問題となるが、この発明では、この問
題点もなく、耐電圧上もすぐれた構造である・ なお、上記実施例では、モジュール取付板２０に摺動部
１２を設は九が、モジュール取付枠１１に摺動部を設け
ても、ｔた、両方に設けてもよいことは一白である。Furthermore, since the sliding surface 12 is plate-shaped, its structural dimensions are small and compact, and it also has a sliding function. Furthermore, when metal surfaces slide against each other, there is a concern that metal powder may be generated, which poses a problem in terms of insulation performance, but this invention does not have this problem and has an excellent structure in terms of withstand voltage. In the example, the sliding portion 12 is provided on the module mounting plate 20, but it is obvious that the sliding portion may be provided on the module mounting frame 11 or both.

以）′のように、この発明の高電圧サイリスタパルプに
よれば、絶縁支柱に取り付けられ九モジュール取付板と
、モジュール取付枠間にテフロンなどの摩擦係数の少な
い材料により摺動面を形成するとともに１引き出し方向
のガイド面を有するようＫしたので、サイリスタの取り
換え作業性が大幅に向上するとともに、小型にでき、し
かも耐電圧上もすぐれたものとなるものである。As described above, according to the high voltage thyristor pulp of the present invention, a sliding surface is formed between the module mounting plate attached to the insulating column and the module mounting frame using a material with a low coefficient of friction such as Teflon. Since it has a guide surface in one drawing direction, the workability of replacing the thyristor is greatly improved, the size can be reduced, and the withstand voltage is also excellent.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は一般的な高電圧サイリスタバルブの概略構成図
、第２図はこの発明の高電圧サイリスタバルブの一実施
例におけるバルブユニットの横断面図、第３図は同上高
電圧サイリスタパルプのノ（ループユニットのモジュー
ルの側面図である０１・・・パルプタンク、３・・・絶
縁ガス、１１・・・モジュール取付枠、１２・・・摺動
部、１３・・・サイリスタパルプ ック、１６・・・分圧回路、ＩＴ−・・点弧回路、２０
・・・モジュール取付板、２１・・・絶縁支柱。 なか、図中同一符号は同一を九は相当部分を示すＯ 代理人　葛　野　信　−、Fig. 1 is a schematic configuration diagram of a general high voltage thyristor valve, Fig. 2 is a cross-sectional view of a valve unit in an embodiment of the high voltage thyristor valve of the present invention, and Fig. 3 is a cross-sectional view of the same high voltage thyristor pulp as above. (It is a side view of the module of the loop unit. ...Voltage dividing circuit, IT-...Ignition circuit, 20
...Module mounting plate, 21...Insulation support. In the figures, the same reference numerals indicate the same parts, and 9 indicates the corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 絶縁ガスを封入し九バルブタンク、このパルプタンク内
に配置された絶縁支柱、サイリスタ素子を豪数個直並列
接続したサイリスタスタックと分圧回路などの付属回路
から構成されて積み重ねられたサイリスタパルプ、この
サイリスタパルプを取り付けるモジュール取付板、上記
絶縁支柱ＫＩＩＲり付けられ上記モジュール敗付板との
接触面にチアミンなどの摩擦係数の少ない材料により摺
動面を構成するとともに引き出し方向のガイド面を有す
る摺動およびガイド手段を備えてなる高電圧サイリスタ
パルプ。The thyristor pulp consists of a nine-valve tank filled with insulating gas, an insulating column placed inside this pulp tank, a thyristor stack with several thyristor elements connected in series and parallel, and attached circuits such as a voltage dividing circuit. The module mounting plate to which this thyristor pulp is attached is attached to the insulating column KIIR, and the sliding surface is made of a material with a low friction coefficient such as thiamin on the contact surface with the module failure plate, and the sliding surface has a guide surface in the drawing direction. High voltage thyristor pulp comprising dynamic and guiding means.
JP57048601A 1982-03-26 1982-03-26 High voltage thyristor bulb Pending JPS58165363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57048601A JPS58165363A (en) 1982-03-26 1982-03-26 High voltage thyristor bulb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048601A JPS58165363A (en) 1982-03-26 1982-03-26 High voltage thyristor bulb

Publications (1)

Publication Number Publication Date
JPS58165363A true JPS58165363A (en) 1983-09-30

Family

ID=12807922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048601A Pending JPS58165363A (en) 1982-03-26 1982-03-26 High voltage thyristor bulb

Country Status (1)

Country Link
JP (1) JPS58165363A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643295B2 (en) * 1977-02-08 1981-10-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643295B2 (en) * 1977-02-08 1981-10-12

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