JPS58159001A - Low distortion amplifying circuit - Google Patents
Low distortion amplifying circuitInfo
- Publication number
- JPS58159001A JPS58159001A JP4213782A JP4213782A JPS58159001A JP S58159001 A JPS58159001 A JP S58159001A JP 4213782 A JP4213782 A JP 4213782A JP 4213782 A JP4213782 A JP 4213782A JP S58159001 A JPS58159001 A JP S58159001A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- transistor
- current
- low distortion
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims abstract description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 13
- 239000000779 smoke Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
本実−は、負帰還を用いない低歪増巾回路KIIするも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a low distortion amplification circuit KII that does not use negative feedback.
従来においてトランジスタを用いて低歪の増巾回路を構
成するKは負帰還は必要不可欠の条件とされ、これはト
ランジスタ観有の特性である非直線性を打ち消すために
はやむを得ない手段であるとされていた。In the past, negative feedback was considered an essential condition for constructing a low-distortion amplifier circuit using transistors, and this was considered an unavoidable means to cancel the nonlinearity that is a characteristic of transistors. It had been.
しかしながら最近のオーディオアンプ等で要求されてい
る高忠実度増中器にあっては、負部fi[よる低歪化は
逆(高域の不安定特性等の弊害を生じさせ高忠実度が低
下されてきて聰感上間勉となっている。However, in the case of high-fidelity amplifiers, which are required in recent audio amplifiers, etc., the reduction in distortion due to negative part fi [is the opposite (it causes adverse effects such as unstable characteristics in the high range, and the high fidelity decreases). As a result of this, I have become very nervous.
本発明は以上の欠点を除去するためなされたもので、負
倦還をかけることなく低歪化を実税できるように構成し
た低歪増巾回路な提供することを目的とするものである
。以下WJ面な#照して本発明実施例を説明する。The present invention has been made to eliminate the above-mentioned drawbacks, and it is an object of the present invention to provide a low distortion amplification circuit configured to achieve low distortion without applying negative feedback. Embodiments of the present invention will be described below with reference to WJ aspects.
纂IIIは本発明実施例による低歪増巾回路を示す回路
図で、INは入力端子、OUTは出力端子、Vaは電源
端子、R1は第1の抵抗、凡2はw、2の抵抗、T1.
T、A!同一特性からなるトランジスタで41K)ラン
ジスタT3は複数個(1個)用いられ゛かつそのコレク
タとペースが短絡されて、出力端子0υ丁に対し順方向
ダイオードDが路個直タリに接続された構成となってい
る。Series III is a circuit diagram showing a low distortion amplification circuit according to an embodiment of the present invention, where IN is an input terminal, OUT is an output terminal, Va is a power supply terminal, R1 is a first resistor, 2 is a resistor 2, T1.
T-A! A plurality of (one) transistors T3 (41K transistors with the same characteristics) are used, and their collectors and paces are short-circuited, and a forward diode D is directly connected to the output terminal 0υ. It becomes.
以上(おいて上記各トランジスタは同一特性のものが直
列に接続されているので各ベース・エミッタ間電圧VB
Iは等しくなり、トランジスタT1の電流増巾率Yhy
x、を源電圧なVOO1入力信号[Vi、出力信号’1
11’VOとすると、第1の抵抗R。(In this case, each transistor with the same characteristics is connected in series, so each base-emitter voltage VB
I becomes equal, and the current amplification rate Yhy of transistor T1
x, is the source voltage VOO1 input signal [Vi, output signal '1
11'VO, the first resistor R.
vtILれル111R11ハ、
Il= (V4− VBI ) / Rxtとなり、第
2の抵抗R2Yfiれる電流工8は、l2=IN・hy
x−hyx・(Vi−VBI)/R1・ となるOまた
出力信号V。は、
vo== Vaa −a、 −im−%@VBI=Vo
o−Rz・hyx、(Vi VBI)/R1−1Vs
x= Vao −12・hym Vi/R1+(R
z11by]cT/Ri 5)Viiz(1ここでR
2・hym/R1−aの時この値を上記式(1)K代入
すると、
vo工■。0−路■1 ・・・(2)となる。vtIL resistance 111R11c, Il=(V4-VBI)/Rxt, and the current resistor 8 which is connected to the second resistor R2Yfi is l2=IN・hy
The output signal V becomes x-hyx (Vi-VBI)/R1. is vo== Vaa -a, -im-%@VBI=Vo
o-Rz・hyx, (Vi VBI)/R1-1Vs
x= Vao −12・hym Vi/R1+(R
z11by] cT/Ri 5) Viiz (1 where R
When 2.hym/R1-a, substituting this value into K in the above equation (1), votech■. 0-Route ■1...(2).
すなわち式(2)から明らかなようK、入力端子INか
らトランジスタT□に入力される入力信号■1はル倍の
変化となって出力端子OUTから出すなわち侮・hym
/ R1= aの条件の基では各トランジスタ′に同
一特性のもので構成することにより、トランジスタ一体
は非直!I素子であっても負帰還をかけることな(無歪
の増巾回路として動作させることができる、
以上の増巾1路を構成するトランジスタはカレン)<ラ
ー回路【応用することKより、集積回路化を計ることで
ta増巾率hH! vバラツキなく抑えることができる
6第2図はその一例を示すもので、同一特性のトランジ
スタt’(m+1 )個並列に接続しベースbとエミッ
タeを各々共通に接続)すると共に1個のトランジスタ
のみtベース・コレクタV短絡してベースBとなし、残
りのm個のトランジスタのコレクタl共AKしてコレク
タCとなしたものである。In other words, as is clear from equation (2), the input signal ■1 input from the input terminal IN to the transistor T□ changes by a factor of 1 and comes out from the output terminal OUT.
/ Under the condition of R1 = a, by configuring each transistor' with one with the same characteristics, the transistor as a whole is non-linear! Even if it is an I element, negative feedback should not be applied (it can be operated as a distortion-free amplification circuit. ta increase rate hH by measuring circuitization! 6 Figure 2 shows an example of this, in which transistors t' (m+1) with the same characteristics are connected in parallel and the base b and emitter e are connected in common), and one transistor Only t base and collector V are short-circuited to form the base B, and the collectors l of the remaining m transistors are also AK'd to form the collector C.
このように複合されたトランジスタ回路におけるコレク
タ電fiAは各トランジスタのコレクタ電*Icの1僑
となる。ここで電流増巾率hlFEが大きければベース
電流は無視できるので、複合されたトランジスタ回路の
ベース電流は1個のトランジスタのコレクタ電流と同じ
になる。よって電流増巾率hFiがmK比べて十分大き
−・場合この複合回路の電流増巾率tlFKは1となる
。このよ5に複数のトランジスタを並列vc![I続し
た場合、トランジスタの個数により複合トランジスタ回
路の電流増巾率【決定することができ)くラツキのな−
)値を得ることができる。The collector voltage fiA in such a composite transistor circuit is one component of the collector voltage *Ic of each transistor. Here, if the current amplification factor hlFE is large, the base current can be ignored, so the base current of the composite transistor circuit becomes the same as the collector current of one transistor. Therefore, when the current amplification factor hFi is sufficiently larger than mK, the current amplification factor tIFK of this composite circuit becomes 1. Multiple transistors in parallel VC! [If connected, the current amplification rate of the composite transistor circuit can be determined depending on the number of transistors.]
) value can be obtained.
以上述べて明らかなように本発明(よれ1lljl−特
性のトランジスタによって増巾回路を構成することによ
って負帰Ilvかけることなしに低歪増巾器を実現する
ことができる。した′b′−って負陽遺の悪影譬を受け
ることなく高忠実度増巾器を構成することができる、
実施例中ではNPN型トランジスタを用(・た場合九つ
いて説明したが、PNP型トランジスタ【用いても同様
な効果を得ることができる。As is clear from the above description, it is possible to realize a low distortion amplifier without applying a negative feedback Ilv by configuring an amplifier circuit using transistors having skew characteristics according to the present invention. In this embodiment, a high-fidelity amplifier can be constructed without suffering any negative effects. You can also get the same effect.
@Ni1i)および@2図は共に本考案実施例を示す目
略図である。
IN・・・入力端子、OUT・・・出力端子、va
・・電源端子、Tl? ”2・・・トランジスタ、D・
・・ダイオード。
特許出願人 クラリオン株式会社Figures @Ni1i) and @2 are both schematic diagrams showing embodiments of the present invention. IN...Input terminal, OUT...Output terminal, va
...Power terminal, Tl? "2...transistor, D...
··diode. Patent applicant Clarion Co., Ltd.
Claims (1)
タ増巾回路虻おいて、上記入力端子とトランジスタのベ
ース間K11ilの抵抗がlIkMされ、上記出力端子
と電源端子間K1112の抵抗および上記トランジスタ
と同−特性のトランジスタのコレクタ・ペース煙路によ
って構成された順方向ダイオードが1個直列KlkM!
lされ、上記第1の抵抗と第2の抵抗の比と上記トラン
ジスタの電流項中率との積が上記I&(等しくなるよ5
に構成されたこと1−%黴とする低歪増巾回路。In a transistor amplifier circuit equipped with an input terminal, an output terminal, and a power supply terminal, a resistance K11il between the input terminal and the base of the transistor is lIkM, and a resistance K1112 between the output terminal and the power supply terminal and the same as that of the transistor. One forward diode configured by the collector-pace smoke path of the transistor with the characteristic is connected in series KlkM!
The product of the ratio of the first resistance and the second resistance and the current term neutrality of the transistor is the above I&(so that it is equal to 5
A low distortion amplification circuit constructed with 1-% mold.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4213782A JPS58159001A (en) | 1982-03-16 | 1982-03-16 | Low distortion amplifying circuit |
US06/458,094 US4481483A (en) | 1982-01-21 | 1983-01-14 | Low distortion amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4213782A JPS58159001A (en) | 1982-03-16 | 1982-03-16 | Low distortion amplifying circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58159001A true JPS58159001A (en) | 1983-09-21 |
Family
ID=12627547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4213782A Pending JPS58159001A (en) | 1982-01-21 | 1982-03-16 | Low distortion amplifying circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58159001A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990001831A1 (en) * | 1988-08-08 | 1990-02-22 | Kabushiki Kaisha Enu-Esu | Wide-band amplifier |
-
1982
- 1982-03-16 JP JP4213782A patent/JPS58159001A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990001831A1 (en) * | 1988-08-08 | 1990-02-22 | Kabushiki Kaisha Enu-Esu | Wide-band amplifier |
GB2229879A (en) * | 1988-08-08 | 1990-10-03 | Enu Esu Kk | Wide-band amplifier |
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