JPS58158918A - Manufacture of metal nitride thin film - Google Patents
Manufacture of metal nitride thin filmInfo
- Publication number
- JPS58158918A JPS58158918A JP4011082A JP4011082A JPS58158918A JP S58158918 A JPS58158918 A JP S58158918A JP 4011082 A JP4011082 A JP 4011082A JP 4011082 A JP4011082 A JP 4011082A JP S58158918 A JPS58158918 A JP S58158918A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- nitride thin
- metal nitride
- substrate
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 7
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 14
- 230000004888 barrier function Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- XXUXXCZCUGIGPP-ACAGNQJTSA-N 2-Hydroxy-3,5-dinitro-N-[(1Z)-(5-nitrofuran-2-yl)methylidene]benzene-1-carbohydrazonic acid Chemical compound C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(O)=C1C(=O)N\N=C/C1=CC=C([N+]([O-])=O)O1 XXUXXCZCUGIGPP-ACAGNQJTSA-N 0.000 description 1
- 241000208140 Acer Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
不発９１１は比抵抗が小さく、かつ内部応力の小さい金
属窒化物薄膜の製造方法に関するものである〇
一般にチタン、モリブデン、タンタル勢の高融点金属の
電化物は、きわめて高い融点と嵩い機械的硬度會有し、
熱的、化学的ｖｃ％安定でめるために、 ｑｒ１ｍ装置
９部品の機械的・熱的保睡換として使用さ・れ％最近で
はさらに半導体集槍關絡の高耐熱電極材料の一つとして
実用化されつつめる。Detailed Description of the Invention: Fudo 911 relates to a method for manufacturing metal nitride thin films with low resistivity and low internal stress. In general, electrified materials of high-melting point metals such as titanium, molybdenum, and tantalum have extremely high It has a high melting point and high mechanical hardness,
In order to achieve thermal and chemical VC% stability, it is used as a mechanical and thermal insulation for the nine parts of the QR1M device.Recently, it has also been used as one of the high heat-resistant electrode materials for semiconductor integration. It will be put into practical use.
金ｗ４菫化物薄１ａｔ−半導体集積回路の電極材料とし
て用いる場合、比抵抗か低いことが第１の栄件である。When using gold W4 sulfuride thin 1at as an electrode material for semiconductor integrated circuits, the first priority is low resistivity.
一般ｖｃチタン、ジルコニウムなどの窒化物はバルクで
比較すると％ｔとの金属元素よりも比抵抗が小さくなる
ことが知られている。しかし、電極材料に用いる厚・さ
＠ １００〜数１００ＯＡの薄膜でに、棟々の散乱機構
のため比抵抗は一般に高くなる傾向があり、これ’ｋ”
’Ｆけることが一つの１賛な技術となって−る〇
例えは、チタン、モリブデン、タンタル等の窒化物薄ａ
ａを、窒素・アルゴン混合ガス中の反応性スパッタリン
グにより得る場合、窒素分圧。It is known that general VC nitrides such as titanium and zirconium have a lower specific resistance than metal elements with %t when compared in bulk. However, in thin films with a thickness of 100 to several 100 OA used as electrode materials, the specific resistance generally tends to be high due to the scattering mechanism of the ridges.
An example is a thin film of nitride such as titanium, molybdenum, tantalum, etc.
When a is obtained by reactive sputtering in a nitrogen/argon mixed gas, the nitrogen partial pressure.
窒素・アルゴン混合ガス圧力葡増加させると窒化物薄膜
の元素組成、ＩＩ中の不純物の影４１により比抵抗は増
加するため、通常は放電が持続でさゐ厳小の圧力に設定
される。−１ｆｃ５さらに比抵抗を一トけるために基板
に負の直流バイアス電圧を印加する仁とが、きわめて効
果的でろる〇第１図に、基板に負のバイアス電圧を３印
加したスパッタリンク装置の概略図であり１１は真９チ
ヤンバ、２は排気系、３はチタン、モリブデン、タンタ
ル等の金員ターゲット、４はじゃへい板、５／Ｉｉ高周
波電隊回路、６に基板、７にバイアス電源、８はガス導
入口である。第２図は窒化チタン薄膜の場合の換の比抵
抗とｗａ円に発生した内部応力について基板バイアスの
効果を示したグラフであるＯＰは比抵抗、＃は内部応力
を示す。このテークは窒素分圧２．８ ｍ Ｔｏｒｒ
。When the pressure of the nitrogen/argon mixed gas is increased, the resistivity increases due to the elemental composition of the nitride thin film and the shadow of impurities in II, so the pressure is usually set at a very low level while the discharge continues. -1fc5 It is extremely effective to apply a negative DC bias voltage to the substrate in order to further reduce the resistivity. Figure 1 shows a sputter link device in which three negative bias voltages are applied to the substrate. This is a schematic diagram. 11 is a true 9 chamber, 2 is an exhaust system, 3 is a metal target such as titanium, molybdenum, tantalum, etc., 4 is a barrier plate, 5/Ii high frequency electric circuit, 6 is a board, and 7 is a bias power supply. , 8 is a gas inlet. FIG. 2 is a graph showing the effect of substrate bias on the specific resistance and internal stress generated in the wa circle in the case of a titanium nitride thin film. OP indicates the specific resistance, and # indicates the internal stress. This take has a nitrogen partial pressure of 2.8 m Torr.
.
窒素・アルゴン混合ガス圧力１６．８ ｍＴｏｒｒ 、
高絢波電力４００Ｗ（８４合である。Nitrogen/argon mixed gas pressure 16.8 mTorr,
High power wave power 400W (84 degrees).
このように、基板バイアス印加は窒化チタン薄膜の比抵
抗Ｐ低減に対してきわめて効果的であるが、反面膜内に
着しい内部応力σが発生するために、７牛導体素子を製
造するｗｉＡにウェハのそりにより微細パターンの形成
が由離となること、膜か犀い場合にはクラックやはがれ
が発生するなど、看しい障杏の原因となっていた。As described above, applying a substrate bias is extremely effective in reducing the resistivity P of the titanium nitride thin film, but on the other hand, it generates a large internal stress σ in the film, so it is difficult to apply This has caused problems such as warpage of the wafer, which causes the formation of fine patterns to become unbalanced, and cracks and peeling of the film when the film is rough.
本発明は以上の問題ｔ−解決するために、冨素・アルゴ
ン混合ガス中にざらに水素を添加し、かつ基板に直流バ
イアスを印加することｔ特徴としたものでめる。In order to solve the above-mentioned problems, the present invention is characterized by adding hydrogen roughly into the amine/argon mixed gas and applying a direct current bias to the substrate.
すなわち上記の目的を連敗するために、本発明に窒化物
か導電性を有する金属窒化物薄膜を基板バイアスに負の
バイアス電圧を印加して反＆ら性スパッタ法で形成する
金楓、ｉ！化物ａｍの製造方法において、Ｍｇ、アルゴ
ン混合ガスに水嵩ｋｍ加した雰囲気で形成することを特
徴とする金属窒化物薄膜の製造方法上発明の要旨とする
ものでおる。That is, in order to continuously defeat the above-mentioned purpose, the present invention has been proposed to form a nitride or a conductive metal nitride thin film by applying a negative bias voltage to the substrate and using an anti-rotational sputtering method, i! The gist of the invention is a method for producing a metal nitride thin film, which is characterized in that the method for producing a metal nitride thin film is formed in an atmosphere in which a volume of water km is added to a mixed gas of Mg and argon.
次Ｖ（一本発明の実施ｆｉ４ｊ′を説明する。実施例は
一つの９１＋ボであって１本発明の精神會逸脱しない範
囲において、１１１１Ｉ々の変更あるいは改良を行いう
ダことは云う萱でもない０
本発明でに、窒素・アルゴン混合ガス中に水素を冷加す
ることｔ特徴とする。The following V (an embodiment of the present invention will be described).The embodiment is a 91+ board, and it goes without saying that various changes or improvements may be made without departing from the spirit of the present invention. No 0 The present invention is characterized by cooling hydrogen in a nitrogen/argon mixed gas.
不発明の実施に用いられる装置１には第１図に示すもの
であり１図においてｌは真空チャンバ、２は排気糸、３
は金属ターゲット、４にじゃへい板、５は高周波を源回
路、６に基板、７はバイアス電＃Ａ１８はガス導入口、
９は流量調節弁１示す。手順は、１丁チャンバ１内を排
気抜水＊にガス導入口８に設けられた流量＠動弁９１ｒ
調節することにより、所定の分圧になるまで尋人する。The apparatus 1 used to carry out the invention is shown in FIG. 1, where l is a vacuum chamber, 2 is an exhaust line, and 3 is a
is a metal target, 4 is a barrier plate, 5 is a high frequency source circuit, 6 is a substrate, 7 is a bias voltage #A18 is a gas inlet,
Reference numeral 9 indicates the flow control valve 1. The procedure is to exhaust the inside of the chamber 1 and drain the water * by adjusting the flow rate provided at the gas inlet 8 @ valve 91r.
By adjusting, the pressure is increased until the predetermined partial pressure is reached.
つづいて窒素ｔ−四様ＫＦ９Ｆ足の分圧になる様に導入
し、最後にアルゴン會、使用する装置によって定められ
ている全圧力か用足の圧力となる貰で導入したのち、放
電葡開始させ、金ｌｊ４窒化物薄膜會堆積させる０この
とき、基板には所定の負の′＠流バイアス電圧會印加し
ておく。Next, nitrogen is introduced so that the partial pressure of KF9F is reached, and finally, argon is introduced at the full pressure determined by the equipment used, or after the pressure is reached, the discharge begins. At this time, a predetermined negative current bias voltage is applied to the substrate.
第３図は、窒化チタン薄ＩＩ會、窒素分圧２．８ｍ Ｔ
ｏｒｒ 、水素分圧１ ｈ ４ ｍ Ｔｏｒｒ ｓアル
ゴン−窒素・水素混合〃ス圧力１６．８ ｍ Ｔｏｒｒ
ｅ高周波電力４００Ｗｑ）条件により形成させたとき
の験比抵抗。Figure 3 shows titanium nitride thin II chamber, nitrogen partial pressure 2.8mT
orr, hydrogen partial pressure 1 h 4 m Torr, argon-nitrogen/hydrogen mixture pressure 16.8 m Torr
e Experimental specific resistance when formed under the condition of high frequency power (400 Wq).
内部応力の基板バイアス依存性を示したものでおる０第
３図より、水１ｇ添加によジ比抵抗、内部応力ともに小
さな領域が、バイアス電圧−旬Ｖ〜−３０Ｖに存在する
ことがわかる。From FIG. 3, which shows the dependence of internal stress on substrate bias, it can be seen that when 1 g of water is added, a region in which both resistivity and internal stress are small exists at a bias voltage of -V to -30V.
第４凶は、水素分圧と窒素分圧の比を変化させたときの
比抵抗、内部応力が急増する臨界バイアス電圧を示す。The fourth problem is the critical bias voltage at which the resistivity and internal stress suddenly increase when the ratio of hydrogen partial pressure to nitrogen partial pressure is changed.
斜ａｍ分が内省とも低い領域であり、水素分圧と窒素分
圧の比で０．５付近に最適値が存在することを示す。東
用上分圧比としては０．２５〜０．７５の範囲が好まし
い。Introspection shows that the oblique am component is in a low region, and the optimum value exists around 0.5 for the ratio of hydrogen partial pressure to nitrogen partial pressure. The preferred upper partial pressure ratio is in the range of 0.25 to 0.75.
水素添加ｙｃよｐ、比抵抗ならひｙｃ Ｐ３部応カが低
下する憤域か広がる原因については、現在のところＩだ
よくわかってない。一般に反応性スパッタリンダにより
薄＠管形成す°る場合、スパッタリングガス（Ａｒ 、
Ｎ雪など）ないしはスパッタ雰曲気中に含まれる微量
の酸素が膜中に不純物として喉り込まれ易く、これらが
薄膜の物理的特性を大きく変えることが知られている。Hydrogen addition is yc, and resistivity is yc.At present, the cause of the decline in P3 response and its widening range is not well understood. Generally, when forming a thin tube using a reactive sputtering cylinder, sputtering gas (Ar,
It is known that trace amounts of oxygen (N snow, etc.) or oxygen contained in the sputtering atmosphere are easily absorbed into the film as impurities, and that these greatly change the physical properties of the thin film.
また、基板バイアス印加も、この不純物の膜中への混入
に少なからず影会していることも第２図Ｖこ示す窒化チ
タンの結果の−ＩＰＩｌがらりかがえる。従って、一つ
の可能性として強い還元作用【七する水素の添加か、こ
の膜中への不純物混入の慨構に対してａｍ例らかの鋤き
ｔしているものと考えられる０第３図は電化チタンの場
合に見られた水素添加のガであるが、同様の効果は、他
の導電性含有する金ＩＦ４窒化物薄膜の場合にも期待さ
れるものである〇
以上ａＱＱしたように、本発明によれば反応性スパッタ
リングにおいて基板に負のＩＬＲバイアスを印加し、か
つ窒素・アルゴン混合ガス中に水素全添加することによ
り、比抵抗が低くかつ円Ｓ応力の小さな金＾窒化物博換
を容易に得ることができ、この薄膜を半導体集積回路の
電極の一部に、例えは拡散障壁層として使用丁Ｃば、耐
熱性ならびに信頼性に優れた部品か歩留りよく経隣的に
実現することができる。Furthermore, the -IPIl results for titanium nitride shown in FIG. 2V clearly indicate that the application of substrate bias has a considerable effect on the incorporation of impurities into the film. Therefore, one possibility is that the addition of hydrogen, which has a strong reducing effect [7], is considered to be a measure against the contamination of impurities into the film, as shown in Figure 3. This is a result of hydrogenation seen in the case of electrified titanium, but a similar effect is also expected in the case of other conductive gold IF4 nitride thin films. According to the present invention, in reactive sputtering, by applying a negative ILR bias to the substrate and adding all hydrogen to the nitrogen/argon mixed gas, a gold^nitride compound with low resistivity and small circular S stress is produced. If this thin film is used as a part of the electrode of a semiconductor integrated circuit, for example as a diffusion barrier layer, it will be possible to produce components with excellent heat resistance and reliability in a high-yield manner. be able to.
第１図はスパッタリング装置の概略図、第２図は窒化チ
タン薄膜を高周波反応性スパッタリング法により形成し
た場合の襞の比抵抗と内部応力について基板バイアス効
果上水すグラフ、＠３図に水軍・窒素・アルゴン混合ガ
ス中で同じく形成した窒化チタン薄膜の比抵抗と内部応
力についての基板バイアス効果を示すグラフ、第４図に
水素分圧と窒素分圧の比１ｊｔ変化させたとさの比抵抗
、内部応力が急増する臨界バイアス電圧上水すグラフで
ある。
ｌ・・・・・・Ａ空チャンバ、２・−・・・・排気糸％
３・・・・・・金楓ターケット、４・・・・・・しや
へい板、５・・・・・・高周波ｍ源ｔａ路、６・・・・
・・基板、７・・・−・・バイアス電源、８・・・・・
カス導入口、９・・・・・・流量−動弁特許出願人 日
本電信電話公社
第４図
水ｌＡ鱈し１免分反
第２図
＃−坂ハ４イ又ｔ／Ｅ（ｖ）
第３図
、ｉｓ−ノ（イヱズ５噂芝力巳（ｖ）Figure 1 is a schematic diagram of the sputtering equipment, Figure 2 is a graph of the substrate bias effect and the internal stress of folds when a titanium nitride thin film is formed by high frequency reactive sputtering, and Figure 3 is a graph of the substrate bias effect. A graph showing the substrate bias effect on the specific resistance and internal stress of a titanium nitride thin film similarly formed in a nitrogen/argon mixed gas. It is a graph showing a critical bias voltage at which internal stress increases rapidly. 1...A empty chamber, 2...Exhaust thread%
3...Gold maple target, 4...Shiyahei plate, 5...High frequency m source ta path, 6...
...Substrate, 7...-Bias power supply, 8...
Waste inlet, 9... Flow rate - Valve patent applicant Nippon Telegraph and Telephone Public Corporation Figure 4 Water lA cod 1 division Figure 2 # - Sakaha 4 I Mata t/E (v) No. Figure 3, is-no (Izu 5 Rumor Rikimi Shiba (v)
Claims (1)
に負のバイアス電圧會印加して反応性スパッタ法で形成
する金ｌ１４１！！化物薄膜の製造方法にお−て、ｉ！
素、アルゴン混合ガスに水素を添加した雰囲気で形成す
ることｔ−特徴とする金属窒化物薄膜の製造方法。The nitride has conductivity and is formed by reactive sputtering by applying a negative bias voltage to the thin metal electrified substrate. ! In the method for producing a compound thin film, i!
1. A method for producing a metal nitride thin film, characterized in that the film is formed in an atmosphere in which hydrogen is added to a mixed gas of hydrogen and argon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4011082A JPS58158918A (en) | 1982-03-16 | 1982-03-16 | Manufacture of metal nitride thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4011082A JPS58158918A (en) | 1982-03-16 | 1982-03-16 | Manufacture of metal nitride thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58158918A true JPS58158918A (en) | 1983-09-21 |
Family
ID=12571713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4011082A Pending JPS58158918A (en) | 1982-03-16 | 1982-03-16 | Manufacture of metal nitride thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158918A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193441A (en) * | 1985-02-20 | 1986-08-27 | Mitsubishi Electric Corp | Method of forming metal thin film and therefor device |
| JPS61269804A (en) * | 1985-05-23 | 1986-11-29 | 松下電器産業株式会社 | Manufacture of dielectric film |
| JPS6351630A (en) * | 1986-08-21 | 1988-03-04 | Sanken Electric Co Ltd | Method of forming electrode for silicon substrate |
| JP2007308808A (en) * | 2007-08-23 | 2007-11-29 | Canon Anelva Corp | Sputtering method |
-
1982
- 1982-03-16 JP JP4011082A patent/JPS58158918A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193441A (en) * | 1985-02-20 | 1986-08-27 | Mitsubishi Electric Corp | Method of forming metal thin film and therefor device |
| JPS61269804A (en) * | 1985-05-23 | 1986-11-29 | 松下電器産業株式会社 | Manufacture of dielectric film |
| JPS6351630A (en) * | 1986-08-21 | 1988-03-04 | Sanken Electric Co Ltd | Method of forming electrode for silicon substrate |
| JPH0581050B2 (en) * | 1986-08-21 | 1993-11-11 | Sanken Electric Co Ltd | |
| JP2007308808A (en) * | 2007-08-23 | 2007-11-29 | Canon Anelva Corp | Sputtering method |
| JP4719195B2 (en) * | 2007-08-23 | 2011-07-06 | キヤノンアネルバ株式会社 | Sputtering method |
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