JPS5815256A - Coating method for sealing adhesive of integrated circuit - Google Patents
Coating method for sealing adhesive of integrated circuitInfo
- Publication number
- JPS5815256A JPS5815256A JP11302881A JP11302881A JPS5815256A JP S5815256 A JPS5815256 A JP S5815256A JP 11302881 A JP11302881 A JP 11302881A JP 11302881 A JP11302881 A JP 11302881A JP S5815256 A JPS5815256 A JP S5815256A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- adhesive
- sealing
- viscosity
- hollow package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title abstract description 5
- 239000012945 sealing adhesive Substances 0.000 title 1
- 239000000853 adhesive Substances 0.000 claims abstract description 20
- 230000001070 adhesive effect Effects 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 abstract description 8
- 229920000647 polyepoxide Polymers 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000005011 phenolic resin Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000011256 inorganic filler Substances 0.000 description 5
- 229910003475 inorganic filler Inorganic materials 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体集積回路（以下集積回路という）を中空
パッケージによシ封止する除に液体熱硬化性樹脂接着剤
をスクリーン印刷により封止部分に封止用接着剤を塗布
する集積回路の塗布方法に関する。従来、集積回路、例
えば電源用混成集積回路においては、図に示す、混成集
積回路１、外部リード−２からなる基板３と樹脂からな
る蓋体４とを常温で液状接着剤例えばエポキシ樹脂系接
着剤５をコーターで塗る塗布方法を用いた封止が行なわ
れていた。しかしこれらの塗布方法では、液状接着剤に
よる封止性を向上させるための均一な厚みに塗布するこ
とが離しく、さらに高粘度樹脂接着剤では、接着層を厚
くしたシ、ガラス繊維等に予め接着剤を含浸させたルノ
リグを用いるため、塗布後の余分の接着剤が蓋体４と基
板３の接着部分にはみ出すため、いちいち作業者の手に
よって拭き取ったシ、また、！レゾリグを作る１機を設
ける必要であったりして能率が悪い欠点があった。本発
明は、かかる欠点を解決したものであシ、集積回路を中
空パッケージにより封止する際に液状熱硬化性樹脂を封
止部分にスクリーン印刷によって塗布することにより、
血布膜が均一で。DETAILED DESCRIPTION OF THE INVENTION The present invention involves sealing a semiconductor integrated circuit (hereinafter referred to as an integrated circuit) in a hollow package, and applying a liquid thermosetting resin adhesive to the sealing portion by screen printing. The present invention relates to an integrated circuit coating method for coating an integrated circuit. Conventionally, in an integrated circuit, for example, a hybrid integrated circuit for a power supply, a substrate 3 consisting of a hybrid integrated circuit 1, external leads 2, and a lid body 4 made of resin are bonded together at room temperature using a liquid adhesive, such as an epoxy resin adhesive, as shown in the figure. Sealing was performed using a coating method in which Agent 5 was applied using a coater. However, with these application methods, it is difficult to apply the liquid adhesive to a uniform thickness to improve the sealing performance, and in addition, with high viscosity resin adhesives, it is difficult to apply the liquid adhesive to a thick adhesive layer, glass fiber, etc. in advance. Since a LunoRig impregnated with adhesive is used, excess adhesive after application protrudes onto the bonded area between the lid 4 and the substrate 3, so the operator must wipe it off each time! It had the disadvantage of being inefficient because it required one machine to make the Resolig. The present invention solves this drawback by applying liquid thermosetting resin to the sealed portion by screen printing when sealing the integrated circuit in a hollow package.
The blood film is uniform.
かつ、薄く、また、気泡の巻き込みがなく、希望する接
着部分に塗布でき、封止性が向上し、かつ作業能率のよ
い集積回路の封止方法を提供しようとする屯のである。The aim of this project is to provide a method for encapsulating integrated circuits that is thin, does not entrain air bubbles, can be applied to the desired adhesive area, has improved sealing properties, and has high work efficiency.
すなわち、本発明は、集積回路を中空パッケージによっ
て封止する際に、封止部分の少なくとも１つの面上に液
体熱硬化性樹脂の温［２ｓ℃で粘度が３，０００〜２０
０．０００センチポイズである接着剤をスクリーン印刷
によシ塗布することを特徴とする。That is, in the present invention, when an integrated circuit is sealed with a hollow package, a liquid thermosetting resin with a viscosity of 3,000 to 20
It is characterized by applying an adhesive of 0.000 centipoise by screen printing.
本発明に用いる液状熱硬化性樹脂としては、エポキシ系
樹脂が好適であるがさらにこれに無機充填剤を含有させ
たものであってもよくその具体例としては吸湿性の低い
アルミ九窒化ホウ素、溶融シリカ等があけられる。この
様な無機充填剤を熱硬化性樹脂に含有させると熱伝導性
が向上する他、水分等が透過し難く、また、アルミニウ
ムや銅等の金属基板に用いられる金属への接着性も良好
である。熱硬化性樹脂への無機充填剤の添加量は！ＩＯ
〜７０容積チ好ましくは５０〜６５容積−である。また
、この無機充填剤を含有させた液状熱硬化性樹脂は２５
℃で３．０００〜２００．０００センチポイズであシ、
好ましくは２０．０００〜１００．０００センチポイズ
である。３．０００センチポイズ未満では、粘度が低く
、１同車９では被着物への接着剤の移行が十分性われず
、封止性が劣Ｊ）、２００．０００センチポイズを超え
るとスクリーンの網目が転写され、］Ｉ！布ム２による
封止性が低下する。また、本発明のスクリーン印刷は、
熱硬化性樹脂に無機充填剤を添加しない場合で本。The liquid thermosetting resin used in the present invention is preferably an epoxy resin, but it may also contain an inorganic filler. Fused silica etc. can be drilled. Including such an inorganic filler in a thermosetting resin improves thermal conductivity, makes it difficult for moisture to pass through, and also has good adhesion to metals used in metal substrates such as aluminum and copper. be. What is the amount of inorganic filler added to thermosetting resin? IO
~70 volumes, preferably 50-65 volumes. In addition, the liquid thermosetting resin containing this inorganic filler is 25%
3.000-200.000 centipoise at °C,
Preferably it is 20,000 to 100,000 centipoise. If the viscosity is less than 3,000 centipoise, the viscosity will be low, and the adhesive will not transfer sufficiently to the adherend, resulting in poor sealing properties.If it exceeds 200,000 centipoise, the screen mesh will be transferred. ] I! The sealing performance of the cloth 2 is reduced. In addition, the screen printing of the present invention
This is the case when no inorganic filler is added to the thermosetting resin.
該樹脂の粘度が２５℃で５．０００センチポイズ以上あ
れば被着物への塗布は均一に行うことができる。If the viscosity of the resin is 5.000 centipoise or more at 25°C, it can be uniformly applied to the adherend.
以下、実施例によシ本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail by way of examples.
実施例１
アルミニウム基板に蓋材としてフェノール樹脂を用い、
室温硬化型エポキシ樹脂接着剤をスクリーン印刷して、
トランジスターを塔載した回路を内蔵した中空パッケー
ジを封止した。この中空パッケージを温度６０℃、相対
湿度９５ｍの環境下１０００時間放置し、トランジスタ
ーのコレクター遮断電流工。ＢＤ の漏れ電流特性の変
化を測定した。すなわち、初期の辿断電流工。ＢＤ の
漏れ電流が１Ｑ ｎＡ 以下の素子が１００ｎＡ以上
となるものは不良とした。その結果、不良率は１５憾で
あった。Example 1 Using phenol resin as a lid material on an aluminum substrate,
Screen printed room temperature curing epoxy resin adhesive,
A hollow package containing a circuit containing a transistor is sealed. This hollow package was left for 1,000 hours at a temperature of 60°C and a relative humidity of 95m, and the collector current of the transistor was cut off. Changes in leakage current characteristics of BD were measured. Namely, early trace cutting current work. Elements with a BD leakage current of 1Q nA or less and a device with a leakage current of 100 nA or more were judged to be defective. As a result, the defect rate was 15%.
実施例２
接着剤として、粒子径５０μ以下の アルミナを５２容
積憾含有した室温硬化型エポキシ樹脂を用い、実施例１
と同様の操作及び測定を行った。Example 2 A room temperature curing epoxy resin containing 52 volumes of alumina with a particle size of 50 μm or less was used as the adhesive.
The same operations and measurements were performed.
その結果、不良率は５俤であった。As a result, the defective rate was 5 yen.
実施例３
接着剤として、粒子径５０μ以下のアルミナを６２容積
チ含有した室温硬化型エポキシ樹脂を用い、実施例１と
同様の操作及び測定を行った。Example 3 The same operations and measurements as in Example 1 were performed using a room temperature curing epoxy resin containing 62 volumes of alumina with a particle size of 50 μm or less as an adhesive.
その結果不良率は１慢以下であった。As a result, the defective rate was less than 1%.
比較例１〜２
アルミニウム基板に蓋材としてフェノール樹脂を用い、
室温硬化型エポキシ樹脂接着剤または粒子径１０μ以下
のアルミナを５４容積係含有した室温硬化型エポキシ樹
脂接着剤を刷毛車シして、トランジスターを塔載した回
路を内蔵した中空パッケージを封止した。以下実施例１
と同様の測定を行った。その結果不良率は各々７０ｇ６
と１２優であった。Comparative Examples 1-2 Using phenol resin as a lid material on an aluminum substrate,
A room-temperature-curing epoxy resin adhesive or a room-temperature-curing epoxy resin adhesive containing 54 volumes of alumina with a particle size of 10 μm or less was applied with a brush to seal a hollow package containing a circuit mounted with a transistor. Example 1 below
The same measurements were carried out. As a result, the defective rate was 70g6 for each
and was 12th grade.
手続補正書
昭和５６年１２月タ日
特許庁長官 島 １）春 樹 殿
１ 事件の表示
昭和５６年特許願第１１３０２８号
２、発明の名称
集積回路の封止用接着剤の塗布方法
６ 補正をｊる者
事件との関係 特許出願人
住所 東京都千代田区有楽町１丁目４査１号４、補正の
対象
明細書の発明の詳細な説明の欄
５ 補正の内容
別紙の辿り
明細書第４頁第１４行目の「遮断電流１ｃ１３ｕ Ｉを
「遮断電流■ＣＢＯＪとまた第１５行目の１遮断電流■
。Ｂ１．」を１遮断電流■。ＢＯＪと訂正する。Procedural amendment December 1980 Director General of the Japan Patent Office Shima 1) Haruki Tono 1 Indication of the case 1982 Patent Application No. 113028 2 Name of the invention Method of applying adhesive for sealing integrated circuits 6 Amendment Relationship with the case of a person who is a J.P. Patent applicant Address No. 1-4, 1-4, Yurakucho, Chiyoda-ku, Tokyo Column 5 for detailed explanation of the invention in the specification subject to amendment Contents of the amendment Page 4 of the attached specification The ``breaking current 1c13u I'' on the 14th line is the ``breaking current■CBOJ'' and the 1 breaking current■ on the 15th line.
. B1. ” 1 interrupting current■. Correct it to BOJ.
Claims (1)
分の少なくとも１つの面上に液体熱硬化性樹脂の温度２
５℃で粘度が３．０００〜２００ 、０００センチボイ
ズである接着剤をスクリーン印刷によシ塗布することを
特徴とする集積回路の封止用接着剤の塗布方法。When an integrated circuit is encapsulated by a hollow package, a temperature 2 of a liquid thermosetting resin is applied on at least one surface of the encapsulation portion.
1. A method for applying an adhesive for sealing an integrated circuit, which comprises applying an adhesive having a viscosity of 3,000 to 200,000 centivoise at 5° C. by screen printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11302881A JPS5815256A (en) | 1981-07-21 | 1981-07-21 | Coating method for sealing adhesive of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11302881A JPS5815256A (en) | 1981-07-21 | 1981-07-21 | Coating method for sealing adhesive of integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5815256A true JPS5815256A (en) | 1983-01-28 |
Family
ID=14601631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11302881A Pending JPS5815256A (en) | 1981-07-21 | 1981-07-21 | Coating method for sealing adhesive of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815256A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6335739A (en) * | 1986-07-30 | 1988-02-16 | Daido Steel Co Ltd | In-furnace conveyance device |
| JPH0333823U (en) * | 1989-08-10 | 1991-04-03 |
-
1981
- 1981-07-21 JP JP11302881A patent/JPS5815256A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6335739A (en) * | 1986-07-30 | 1988-02-16 | Daido Steel Co Ltd | In-furnace conveyance device |
| JPH0333823U (en) * | 1989-08-10 | 1991-04-03 |
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