JPS58138107A - Microwave mixer circuit - Google Patents
Microwave mixer circuitInfo
- Publication number
- JPS58138107A JPS58138107A JP2143882A JP2143882A JPS58138107A JP S58138107 A JPS58138107 A JP S58138107A JP 2143882 A JP2143882 A JP 2143882A JP 2143882 A JP2143882 A JP 2143882A JP S58138107 A JPS58138107 A JP S58138107A
- Authority
- JP
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- Prior art keywords
- local oscillation
- circuit
- transistor
- signal
- oscillation signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010355 oscillation Effects 0.000 claims abstract description 56
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 238000000926 separation method Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001615 p wave Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0658—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
- H03D9/0666—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using bipolar transistors
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Superheterodyne Receivers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、マイクロ波帯のミキサ回路に関するもので、
特に、トランジスタあるいは、電界効果トランジスタ（
以下ＦＩＴという）を用いたミキサ回路に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave band mixer circuit.
In particular, transistors or field effect transistors (
The present invention relates to a mixer circuit using a FIT (hereinafter referred to as FIT).
従来、種々のマイクロ波帯のミキサ回路が考案され、実
現さ扛ている。マイクロ波帯のミキサ回路の方式として
は、ミキサ素子としてダイオードを用いるか、トランジ
スタ、あるいはＦＥＴ’ｉ用いるかにより二つの方式が
考えられている。Conventionally, various microwave band mixer circuits have been devised and realized. Two methods have been considered for microwave band mixer circuits, depending on whether a diode, a transistor, or an FET'i is used as the mixer element.
しかし、いずれの方式においてもミキサ素子が複数個必
要である、回路構成が複雑である、高周波受信信号と局
部発振信号との分離が良好でない等の欠点がある。However, both systems have drawbacks such as requiring a plurality of mixer elements, having a complicated circuit configuration, and not being able to separate the high-frequency received signal and the local oscillation signal well.
第１図は、従来よく使用されているダイオードを用いた
ダブル・バランス・ミキサ（リング変調器とも言う）の
基本的回路を示す。FIG. 1 shows the basic circuit of a conventionally commonly used double balanced mixer (also called a ring modulator) using diodes.
図において、１，６は平衡−不平衡変成器で、１は受信
信号用変成器、６は局部発振信号用変成器である。２．
３． ４． ５はミキサ・ダイオードである。ｆＲ，
ｆＬはそ扛ぞれ受信信号２局部発振信号を示す。７は中
間周波数を取出す出力端子であり、ｆＩＦは中間周波信
号を示す。In the figure, 1 and 6 are balanced-unbalanced transformers, 1 is a receive signal transformer, and 6 is a local oscillation signal transformer. 2.
3. 4. 5 is a mixer diode. fR,
fL indicates the received signal 2 local oscillation signal. 7 is an output terminal for taking out an intermediate frequency, and fIF indicates an intermediate frequency signal.
第１図に示した方式においては、受信信号ｆ。In the system shown in FIG. 1, the received signal f.
と局部発振信号ｆＬ の分離が良く、特性が安定である
という長所があるが、ミキサ使用素子が複数個必要であ
り、平衡−不平衡変成器１及び６が必要であるため、回
路が複雑となり、また高周波入力信号ｆＲから中間周波
数ｆｌＦへ変換されるとき、常に変換損失音生じるとい
う欠点がある。It has the advantage of good separation between the local oscillation signal fL and the local oscillation signal fL, and stable characteristics, but it requires multiple mixer elements and the balanced-unbalanced transformers 1 and 6, making the circuit complex. , there is also a drawback that conversion loss sound always occurs when converting the high frequency input signal fR to the intermediate frequency flF.
第２図は、従来よく使用されているトランジスタを用い
たマイクロ波ミキサの基本的回路構成を示すものである
。FIG. 2 shows the basic circuit configuration of a microwave mixer using transistors, which has been commonly used in the past.
受信信号入力端子１局部発振信号入力端子、および中間
周波信号入力端子である。１４は高周波用トランジスタ
、１３は入力整合回路である。ｆＲ＋ｆＬ＋ ｆＩＦ
はそ扛ぞ扛高周波受信信号２局部発振信号、中間周波信
号を示す。１４は高周波用トランジスタ、１６は中間周
波信号を選択通過させる低域通過沖波器、１１．１２は
それぞｆＬＭ流カット用のコンデンサであるが、高周波
受信信号ｆＲが局部発振信号入力端子９へ漏洩すること
によるミキサとしての特性の劣化（特にミキサとしての
雑音指数が劣化する。）を防ぐため、コンデンサ１２は
、高周波受信信号ｆＲおよび局部発振信号ｆＬ の周波
数帯において、非常に高いインピーダンスを持つように
、容喰値の小さいコンデンサを使用する必要がある。Received signal input terminal 1 is a local oscillation signal input terminal and an intermediate frequency signal input terminal. 14 is a high frequency transistor, and 13 is an input matching circuit. fR+fL+fIF
High frequency received signal 2 local oscillation signal and intermediate frequency signal are shown. 14 is a high-frequency transistor, 16 is a low-pass wave transducer that selectively passes an intermediate frequency signal, and 11 and 12 are capacitors for fLM flow cut, but the high-frequency received signal fR leaks to the local oscillation signal input terminal 9. In order to prevent the characteristics of the mixer from deteriorating (particularly the noise figure as a mixer deteriorates) due to Therefore, it is necessary to use a capacitor with a small capacitance value.
７第２図に示した回路においては、コンデンサ１２とコ
ンデンサ１１のみが、高周波受信信号入力端子８と局部
発振信号入力端子９とを分離する働きをしているため、
その分離は良好でない。また、局部発振信号入力端子９
への高周波受信信号ｆＲの漏洩はある程度抑えることが
できても、高周波受信信号入力端子８への局部発振信゛
すｆも の漏洩（これは、受信機の不要輻射となり、
他の受信機に悪影響を与える。）は防ぐことができない
などの欠点がある。7 In the circuit shown in FIG. 2, only the capacitor 12 and the capacitor 11 function to separate the high frequency received signal input terminal 8 and the local oscillation signal input terminal 9.
The separation is not good. In addition, local oscillation signal input terminal 9
Even if the leakage of the high-frequency received signal fR to the high-frequency received signal input terminal 8 can be suppressed to some extent, the leakage of the local oscillation signal f to the high-frequency received signal input terminal 8 (this becomes unnecessary radiation of the receiver,
adversely affect other receivers. ) has the disadvantage that it cannot be prevented.
第３図は第２図のトランジスタ・ミキサ回路の欠点であ
る高周波受信信号と局部発振信号の分離をよくするため
、帯域通過沖波器を使用した従来の回路の例である。FIG. 3 is an example of a conventional circuit using a band-pass wave transducer in order to improve the separation between a high frequency received signal and a local oscillation signal, which is a drawback of the transistor mixer circuit shown in FIG.
図において、第２図と同じ部分は、同一の符号を付し、
その説明を省く。１６は高周波受信信号ｆｎ ｋ選択
的に通過させ、局部発振信号ｆＬ を抑圧するための
帯域通過沖波器である。１７は局部発振信号ｆＬｋ選択
的に通過させ、高周波受信信号ｆＲを抑圧するための帯
域通過ｐ波器である。In the figure, the same parts as in Figure 2 are given the same symbols,
I will omit that explanation. Reference numeral 16 denotes a band-pass transducer for selectively passing the high-frequency received signal fn k and suppressing the local oscillation signal fL. Reference numeral 17 denotes a band-pass p-wave device for selectively passing the local oscillation signal fLk and suppressing the high-frequency received signal fR.
第３図に示した回路においては、高周波受信信号周波数
ｆＲと局部発振信号周波数ｆＬとの周波数が高く、中間
周波信号周波数ｆ’ｒｙの低い場合には帯域通過ｒ波器
１６及び１７の選択度が十分と扛なくなる。そのため、
高周波受信信号ｆＲと局部発振信号ｆＬ との分離が
良好でなくなるという欠点がある。In the circuit shown in FIG. 3, when the high frequency reception signal frequency fR and the local oscillation signal frequency fL are high and the intermediate frequency signal frequency f'ry is low, the selectivity of the bandpass r wave generators 16 and 17 is I don't get enough of it. Therefore,
There is a drawback that separation between the high frequency received signal fR and the local oscillation signal fL is not good.
また、帯域通過か１波器１６および１７を使用している
ため、構造が複雑となり、さらに、高周波受信信号ｆＲ
用の帯域通過沖波器１６の挿入損だけ、ミキサとしての
雑音指数が劣化するなどの欠点がある。In addition, since the bandpass or single wave filters 16 and 17 are used, the structure is complicated, and furthermore, the high frequency received signal fR
There are drawbacks such as the noise figure as a mixer deteriorates due to the insertion loss of the bandpass wave transducer 16 used for the mixer.
不発明は、前記従来例にみられる欠点を除去せんとする
もので、ミキサ素子としてマイクロ波帯のトランジスタ
、あるいはＦＥＴ’ｉ１個使用して、簡単な回路構成に
より、高周波受信信号と局部発振信号との分離が良好で
、特性の良好なマイクロ波ミキサ回路を提供するもので
ある。The invention aims to eliminate the drawbacks seen in the conventional example, and uses a microwave band transistor or one FET'i as a mixer element to generate a high frequency received signal and a local oscillation signal with a simple circuit configuration. The purpose of the present invention is to provide a microwave mixer circuit with good separation from the wafer and the microwave mixer circuit with good characteristics.
以下、本発明の具体的実施例を詳細に説明する。Hereinafter, specific embodiments of the present invention will be described in detail.
第４図は不発明の一実施例におけるトランジスタ・ミキ
サ回路の基本的回路構成を示す図である。FIG. 4 is a diagram showing the basic circuit configuration of a transistor mixer circuit in one embodiment of the invention.
図中、バイアス回路は省略して示している。In the figure, the bias circuit is omitted.
図において、２４，２５，２６はそ扛ぞ扛受信信号入力
端子２局部発振信号入力端子、および中間周波信号出力
端子である。２７，２８．２９は直流カット用のコンデ
ンサ、３０．３１はそれぞれ受信信号ｆＲ２局部発振信
号ｆＬ用の整合回路、３３はミキサ素子として使用する
トランジスタ、３２は中間周波信号ｆＩｙ を選択通過
させる低域通過７１１波器である。３４は抵抗で、数十
〇の抵抗値のものを使用する。３６は局部発振信号周波
数ｆ１．帯で１／４波長の電気長をもつ線路である。３
６は高周波短絡用のコンデンサである。In the figure, 24, 25, and 26 are a received signal input terminal 2, a local oscillation signal input terminal, and an intermediate frequency signal output terminal. 27, 28, 29 are capacitors for direct current cut, 30, 31 are matching circuits for the received signal fR2 and local oscillation signal fL, 33 is a transistor used as a mixer element, and 32 is a low frequency band that selectively passes the intermediate frequency signal fIy. It is a passing 711 wave device. 34 is a resistor, which has a resistance value of several tens of thousands. 36 is the local oscillation signal frequency f1. It is a line with an electrical length of 1/4 wavelength in the band. 3
6 is a capacitor for high frequency short circuit.
以下このミキサ回路の動作を説明する。The operation of this mixer circuit will be explained below.
受信信号入力端子２４から入力された受信信＋ＦｆＲは
、入力整合回路３０を通って、トランジスタ３３のベー
スに注入さ扛る。一方、局部発振信号入力端子２５から
入力された局部発振信号ｆＬ は整合回路３１を通って
、トランジスタ３３のエミッタに注入される。ベースか
ら入力された受信信号ｆＲはトランジスタ３３で増幅さ
れるとともに、エミッタから注入された局部発振信号ｆ
Ｌ と混合され、受信信号ｆ、と局部発振信号ｆＬと
の差の信号である中間周波信号ｆｔｙが、トランジスタ
３３波信号ｆＩＦは、トランジスタ３３で増幅さ扛て、
トランジスタ３３のコレクタより低域通過沖波器３２を
通って出力端子２６に出力さ扛る〇第４図に示したよう
に、ミキサとして使用するトランジスタ３３のエミッタ
と接地間に抵抗３４とこれと平行に局部発振信号周波数
ｆＬ 帯で１／４波長の電気長をもつ線路３５と高周
波短絡用コンデンサ３６を接続しているため、局部発振
信号ｆＬは効率的にエミッタからトランジスタに注入さ
れるとともに、中間周波数帯ｆＩＦでは、低雑音な増幅
器として動作する○
線路３５は、局部発振信号の周波数帯ｆＬで１Ａ波長の
電気尺ヲもつ線路であることと、前記線路３５の先端が
、コンデンサ３６により高周波的に短絡されているため
、局部発振信号周波数ｆＬ帯では、トランジスタ３３の
エミッタとアース間は、抵抗３４と整合回路３１が接続
さ扛た第５図ａに示すような等価回路となる。通常、高
周波帯では、入出力インピーダンスは、５０Ωで設計さ
れる。The received signal +FfR input from the received signal input terminal 24 passes through the input matching circuit 30 and is injected into the base of the transistor 33. On the other hand, the local oscillation signal fL input from the local oscillation signal input terminal 25 passes through the matching circuit 31 and is injected into the emitter of the transistor 33. The received signal fR input from the base is amplified by the transistor 33, and the local oscillation signal fR injected from the emitter
The intermediate frequency signal fty, which is the difference signal between the received signal f and the local oscillation signal fL, is mixed with the transistor 33 wave signal fIF, which is amplified by the transistor 33.
It is output from the collector of the transistor 33 through the low-pass transducer 32 to the output terminal 26. As shown in FIG. Since the line 35 having an electrical length of 1/4 wavelength in the local oscillation signal frequency fL band is connected to the high frequency shorting capacitor 36, the local oscillation signal fL is efficiently injected from the emitter to the transistor, and the intermediate In the frequency band fIF, the line 35 operates as a low-noise amplifier.The line 35 is a line with a 1A wavelength electrical scale in the local oscillation signal frequency band fL, and the tip of the line 35 is connected to a high-frequency amplifier by a capacitor 36. Therefore, in the local oscillation signal frequency fL band, the emitter of the transistor 33 and the ground form an equivalent circuit as shown in FIG. 5a, in which a resistor 34 and a matching circuit 31 are connected. Normally, in a high frequency band, the input/output impedance is designed to be 50Ω.
従って本実施例では抵抗３４の抵抗値を６００とすわば
、整合回路３１を省略することが可能となり、さらに回
路構成が簡単となる。Therefore, in this embodiment, by setting the resistance value of the resistor 34 to 600, the matching circuit 31 can be omitted, and the circuit configuration can be further simplified.
中間周波信号周波数ｆｌＦ帯では、トランジスタ３３の
エミッタとアース間は、線路３４とコンデンサ３６によ
り等測的に第６図すに示すように短絡さ扛ることになる
。In the intermediate frequency signal frequency band flF, the emitter of the transistor 33 and the ground are isometrically short-circuited by the line 34 and the capacitor 36 as shown in FIG.
以」二の理由により、局部発振信号ｆＬ は効率的にエ
ミッタからトランジスタに注入さ扛るとともに、トラン
ジスタ３３は、低雑音で効率のよい中間周波増幅器とし
て動作する。For the above two reasons, the local oscillation signal fL is efficiently injected from the emitter into the transistor, and the transistor 33 operates as a low-noise and efficient intermediate frequency amplifier.
また、入力受信信号ｆＲｋベースから注入し、局部発振
信号ｆＬ（エミッタから注入するため、高周波受信信号
ｆＲと局部発振信号ｆＬの分離も良好となる。Furthermore, since the input reception signal fRk is injected from the base and the local oscillation signal fL (injected from the emitter), the high frequency reception signal fR and the local oscillation signal fL can be well separated.
さらに、簡単な回路構成で良好なトランジスタミキサ回
路を実現することができる。Furthermore, a good transistor mixer circuit can be realized with a simple circuit configuration.
−例として、１丁が８ ＧＨｚ程度のトランジスタを使
、用して、受信信号周波数が２．５ ＧＨｚ 、局部発
振信号周波数が２．４ＧＨ２、中間周波信号周波数ｒｒ
ｙ ０
１００ＭＨｚのミキサ回路全本発明により実現すると、
局部発振注入電力がＯｄｂｍ、 コレクタ電流が１ｍ
Ａで、変換利得１２ｄｂ、雑音指数６ｄｂの良好な特性
が得ら扛る。- As an example, one transistor uses about 8 GHz, and the received signal frequency is 2.5 GHz, the local oscillation signal frequency is 2.4 GH2, and the intermediate frequency signal frequency rr.
If the entire y 0 100MHz mixer circuit is realized by the present invention,
Local oscillation injection power is Odbm, collector current is 1m
A has good characteristics with a conversion gain of 12 db and a noise figure of 6 db.
また、不発明によれば、局部発振信号ｆＬ が、前述
したように効率的にエミッタからトランジスタに注入さ
れるため、局部発振信号ｆＬ の注入電力が、−１０ｄ
ｂｍ程度でも良好な特性を示す。Furthermore, according to the invention, since the local oscillation signal fL is efficiently injected from the emitter to the transistor as described above, the injected power of the local oscillation signal fL is -10d.
It shows good characteristics even at about bm.
第６図は、局部発振信号注入電力対雑音指数特性の一例
を示したものである。横軸は、局部発振信号注入電力を
、縦軸は、雑音指数を示す。FIG. 6 shows an example of the local oscillation signal injection power versus noise figure characteristic. The horizontal axis shows the local oscillation signal injection power, and the vertical axis shows the noise figure.
３７は雑音指数特性である。37 is a noise figure characteristic.
第７図は、本発明によるＦＥＴ・ミキサ回路の基本的回
路構成を示す図である。FIG. 7 is a diagram showing the basic circuit configuration of the FET/mixer circuit according to the present invention.
図において、第６図のトランジスタ・ミキサ回路と同様
の働きをする部分には、同一の番号を付しである。In the figure, parts having the same function as the transistor mixer circuit of FIG. 6 are given the same numbers.
２４．２５．２６は、そ扛ぞれ受信信号入力端子２局部
発振信号入力端子、中間周波信号出力端子である。２７
．２８．２９は直流カット用のコ１１
ンデンサ、３０．３１はそれぞれ受信信号ｆＲ９局部発
振信号ｆＬ 用の整合回路、４４はミキサ素子として使
用するＦＥＴ、４４１，４４２，４４３は、そ扛ぞれＦ
ＥＴのゲート電極、ドレイン電極。24, 25, and 26 are a received signal input terminal, a local oscillation signal input terminal, and an intermediate frequency signal output terminal, respectively. 27
．． 28.29 is a capacitor 11 for DC cutting, 30.31 is a matching circuit for the received signal fR9 and local oscillation signal fL, 44 is an FET used as a mixer element, and 441, 442, 443 are FETs, respectively.
Gate electrode and drain electrode of ET.
ソース電極である。This is the source electrode.
３２は、中間周波信号ｆｒｙ ′！ｆ−選択通過させる
低域通過沖波器、３４は抵抗、３５は、局部発振信号周
波数帯で１／４波長の電気長をもつ線路、３６は高周波
短絡用のコンデンサである。32 is an intermediate frequency signal fly'! 34 is a resistor, 35 is a line having an electrical length of 1/4 wavelength in the local oscillation signal frequency band, and 36 is a capacitor for high frequency short circuit.
受信信号入力端子２４から入力さ扛り受信信号（周波数
ｆａ）は入力整合回路３０を通って、ＦＥＴ、４４のゲ
ート４４１に注入される。一方、局部発振信号入力端子
２５から入力された局部発振信号（周波数ｆｈ）は整合
回路３１を通って、ＦＩＴ ４４のソース４４３に注入
される。ゲート４４１から入力された受信信号ｆＲは、
ＦＩＣＴ４４で増幅さ扛るとともに、ソース４４３から
注入さｎ、た局部発振信号ｆ、 と混合され、受信信
号ｆＲと局部発振信号ｆＬ との差の信号である中間
周波信号ｆｒｙがＦＥＴ４４内で発生する。ＦＥＴ４４
内で発生１４間昭５８−１３８１０７（４）
した中間周波信号ｆｒＦは、ＦＥＴ４４で増幅されて、
ＦＩＣＴ４４のドレイン４４２より低域通過沖波器３２
を通って出力端子２６に出力される。The truncated reception signal (frequency fa) input from the reception signal input terminal 24 passes through the input matching circuit 30 and is injected into the gate 441 of the FET 44. On the other hand, the local oscillation signal (frequency fh) input from the local oscillation signal input terminal 25 passes through the matching circuit 31 and is injected into the source 443 of the FIT 44 . The received signal fR input from the gate 441 is
It is amplified by the FICT 44 and mixed with the local oscillation signal f, which is injected from the source 443, to generate an intermediate frequency signal fry, which is the difference between the received signal fR and the local oscillation signal fL, in the FET 44. . FET44
The intermediate frequency signal frF generated within 14 years ago is amplified by FET44,
Low-pass wave transducer 32 from the drain 442 of FICT44
The signal is output to the output terminal 26 through the .
第４図のトランジスタ・ミキサ回路と同様に、ミキサと
して使用するＦＥＴ４４のソース４４３とアース間に抵
抗３４とこｎとす行に局部発振信号周波数１Ｌ 帯で
１／４波長の電気長をもつ線路３６と高周波短絡用のコ
ンデンサ３６を接続しているため、局部発振信号ｆＬ
は効率的にリース４４３からＦＥＴ４４に注入される
とともに、中間周波数帯ｆＩＦでは、低雑音の増幅器と
して動作する。そのため、図に示すような簡単な回路構
成により、雑音特性が良好で、受信信号と局部発振信号
の分離がよいミキサ回路を実現することができる。Similar to the transistor mixer circuit shown in FIG. 4, a resistor 34 is connected between the source 443 of the FET 44 used as a mixer and the ground, and a line 36 with a local oscillation signal frequency of 1L band and an electrical length of 1/4 wavelength is connected to the ground. Since the capacitor 36 for high frequency short circuit is connected to the local oscillation signal fL
is efficiently injected into the FET 44 from the lease 443, and operates as a low-noise amplifier in the intermediate frequency band fIF. Therefore, with a simple circuit configuration as shown in the figure, it is possible to realize a mixer circuit with good noise characteristics and good separation of the received signal and local oscillation signal.
以上述べたように本発明はトランジスタを用いたマイク
ロ波帯のミキサ回路において、トランジスタのベースよ
り高周波入力信号金印７１！Ｌ、）ランジスタのエミッ
タより局部発振信号を印加し、トランジスタのコレクタ
より中間周波信号を取り ３
出シ、トランジスタのエミッタとアース間に局部発振信
号周波数帯で１／４波長の電気長をもつ線路とコンデン
サの直列回路全接続し、この線路とコンデンサの直列回
路と並列に抵抗を接続し女もので、簡単な回路構成によ
り、ミキサとして雑音特性が良好で、受信信号と局部発
振信号との分離が良好なミキサ回路を実現することがで
きる利点を有する。As described above, the present invention provides a microwave band mixer circuit using transistors, in which a high frequency input signal is transmitted from the base of the transistor to the metal seal 71! L,) A local oscillation signal is applied from the emitter of the transistor, and an intermediate frequency signal is taken from the collector of the transistor. A series circuit of a capacitor and a capacitor are all connected, and a resistor is connected in parallel with this line and the series circuit of a capacitor.With a simple circuit configuration, it has good noise characteristics as a mixer, and can separate the received signal and local oscillation signal. This has the advantage that a good mixer circuit can be realized.
第１図は従来のダイオードを使用したダブル・バランス
・ミキサの基本的構成例を示す結線図、第２図、第３図
は従来のトランジスタを使用したミキサの基本的構成例
を示す結線図、第４図は本発明の一実施例におけるマイ
クロ波ミキサ回路の結線図、第６図ａ、 ｂは同ミキ
サ回路の局部発振信号周波数ｒＬ帯での等何回路および
中間周波信号周波数ｒｒｙ帯での等何回路をそ扛ぞれ示
す結線図、第６図は同ミキサ回路の雑音指数特性の一例
を示す図、第７図は不発明の他の実施例におけるマイク
ロ波ミキサ回路の結線図である。
４
ｆＲ＋ ｆＬ＋ ｆ’ｒｙ・・・・・・それぞれ入
力受信信号２局部発振信号、中間周波信号の周波数、１
，６・・・・・・平衡−不平衡変成器、２１ ａ、
４．５・・・・・・ダイオード、１４．３３・・・・・
・トランジスタ、４４・・・・・・ＦＥＴ、８．２４・
・・・・・受信信号入力端子、９，２５・・・・・・局
部発振信号入力端子、７，１０．２６・・・・・・中間
周波信号出力端子、３０，３σ、３１．３１’・・・・
・・整合回路、１５，３２．３２’・・・・・・中間周
波信号全選択通過させる低域通過沖波器、３４，３４′
・・・・・・抵抗、３５．３５’・・・・・・局部発振
信号の周波数帯で１／４波長の電気長全もつ線路、３６
．３８’・・・・・・高周波短絡用のコンデンサ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第３図
第４図
３３３
１
（１１） ｔＩ）
ノ第６図
第７図
４Figure 1 is a wiring diagram showing a basic configuration example of a double balanced mixer using conventional diodes, Figures 2 and 3 are wiring diagrams showing basic configuration examples of a mixer using conventional transistors, Fig. 4 is a wiring diagram of a microwave mixer circuit according to an embodiment of the present invention, and Figs. 6a and 6b are circuit diagrams of the same mixer circuit in the local oscillation signal frequency rL band and intermediate frequency signal frequency rry band. Fig. 6 is a diagram showing an example of the noise figure characteristics of the same mixer circuit, and Fig. 7 is a wiring diagram of a microwave mixer circuit in another embodiment of the invention. . 4 fR+ fL+ f'ry... Frequency of input received signal 2 local oscillation signal, intermediate frequency signal, 1
,6...Balanced-unbalanced transformer, 21a,
4.5...Diode, 14.33...
・Transistor, 44...FET, 8.24・
...Received signal input terminal, 9, 25...Local oscillation signal input terminal, 7,10.26...Intermediate frequency signal output terminal, 30, 3σ, 31.31'・・・・・・
...Matching circuit, 15, 32. 32'...Low-pass transducer that selectively passes all intermediate frequency signals, 34, 34'
...Resistance, 35.35' ...Line with a total electrical length of 1/4 wavelength in the local oscillation signal frequency band, 36
．． 38'...Capacitor for high frequency short circuit. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Figure 4 333 1 (11) tI)
Figure 6 Figure 7 Figure 4
Claims (3)
に接続さ扛、受信信号全入力する第１の端子と、エミッ
タ″！、たはソースに接続され、局部発振信号を入力す
る第２の端子と、コレクタまたはドレインに接続され、
中間周波数信号を取り出す第３の端子とを有し、前記ト
ランジスタのエミッタまたはＦＩＣＴのソースと接地間
に、局部発振信号周波数帯で４分の１波長の電気長を持
つ線路とコンデンサとの直列回路を接続し、前記直列回
路と並列に抵抗を接続したことを特徴とするマイクロ波
ミキサ回路。(1) The first terminal is connected to the base of the transistor or the gate of the FET and inputs all the received signals, the second terminal is connected to the emitter or source and inputs the local oscillation signal, and the collector or connected to the drain,
a series circuit of a capacitor and a line having an electrical length of a quarter wavelength in a local oscillation signal frequency band, and having a third terminal for taking out an intermediate frequency signal, and between the emitter of the transistor or the source of the FICT and ground; A microwave mixer circuit characterized in that a resistor is connected in parallel with the series circuit.
のゲートとの間及び上記第２の端子とトランジスタのエ
ミッタまたはＦＥＴのソースとの間に整合回路を設けた
ことを特徴とする特許請求の範囲第１項記載のマイクロ
波ミキサ回路。(2) terminal of il and base of transistor or FET
2. The microwave mixer circuit according to claim 1, further comprising a matching circuit between the second terminal and the emitter of the transistor or the source of the FET.
のゲートとの間に整合回路を設け、上記抵抗の抵抗値（
ｉ７５０オームとし、第２の端子とトランジスタのエミ
ッタまたはＦＥＴのソースとの間を整合回路を設けるこ
となしに接続したことを特徴とする特許請求の範囲第１
項記載のマイクロ波ミキサ回路。(3) First terminal and base of transistor or FET
A matching circuit is provided between the gate of the resistor and the resistance value of the resistor (
Claim 1, characterized in that the second terminal is connected to the emitter of the transistor or the source of the FET without providing a matching circuit.
Microwave mixer circuit described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2143882A JPS58138107A (en) | 1982-02-12 | 1982-02-12 | Microwave mixer circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2143882A JPS58138107A (en) | 1982-02-12 | 1982-02-12 | Microwave mixer circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58138107A true JPS58138107A (en) | 1983-08-16 |
| JPS6348444B2 JPS6348444B2 (en) | 1988-09-29 |
Family
ID=12054968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2143882A Granted JPS58138107A (en) | 1982-02-12 | 1982-02-12 | Microwave mixer circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58138107A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4592095A (en) * | 1983-03-25 | 1986-05-27 | Matsushita Electric Industrial Co., Ltd. | Microwave FET mixer arranged to receive RF input at gate electrode |
| WO2006040997A1 (en) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Industrial Co., Ltd. | Bidirectional frequency converter and radio equipment using same |
-
1982
- 1982-02-12 JP JP2143882A patent/JPS58138107A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4592095A (en) * | 1983-03-25 | 1986-05-27 | Matsushita Electric Industrial Co., Ltd. | Microwave FET mixer arranged to receive RF input at gate electrode |
| WO2006040997A1 (en) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Industrial Co., Ltd. | Bidirectional frequency converter and radio equipment using same |
| US7783266B2 (en) | 2004-10-08 | 2010-08-24 | Panasonic Corporation | Bidirectional frequency converter and radio equipment using same |
| US8145143B2 (en) | 2004-10-08 | 2012-03-27 | Panasonic Corporation | Bidirectional frequency converter and radio equipment using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348444B2 (en) | 1988-09-29 |
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