JPS58137235A - Hermetic sealing method for semiconductor package - Google Patents

Abstract

PURPOSE:To obtain hermetic sealing method for semiconductor package which assures sealing within a short period of time by forming metallized layer to the edge of ceramic cover, and forming, after plating such layer, a soluble metal layer on said plated layer. CONSTITUTION:A ceramic package 4 comprising a recess 2 for housing a semicondutor element 1 and a lead 3 is prepared. At the periphery of ceramic cover 8, a high melting point metallized layer 9 is formed corresponding to a metallized layer 5. A plating layer 10 is formed thereon and a soluble metal layer 11 is formed thereon. The ceramic cover 8 on which such soluble metal layer 11 is integrated is placed in such a way that it overlaps on the side edge of aperture of the package 4. The soluble metal layer 11 is melted when said package passes through the heating furnace. Thereby the ceramic cover 8 and package 4 are integrated through melting of the metal layer.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides 1! for encapsulation of semiconductors! The present invention relates to a hermetic sealing method for semiconductor containers suitable for use in semiconductor containers.

It is generally known that semiconductors are housed in hermetically sealed containers in order to protect them from dust, moisture, etc., or to facilitate attachment to printed circuit boards.

In recent years, with the development of electronics technology, semiconductor devices have come to be used in electronic equipment, automobiles, machine tools, and all other fields, and the demand for them has been increasing. For this reason, semiconductor devices are now required to be superior not only in performance but also in terms of mass production and economy.

However, in conventional hermetic sealing methods,
This request was not necessarily met. this#
! Fig. 1 is a cross-sectional view for explaining the conventional hermetic sealing method. First, the semiconductor element (1) is housed in a recess (2) and a lead (to). Prepare the container (4) in which the container (4) has been formed, and form a metal ring or a metallized layer (metalized layer) on the ceramic surface on the opening side end surface of the container (4).Next, on this metalized layer 6) The ring is made of a meltable metal such as a gold-tin eutectic alloy and has a thickness of 20 to 70 μm, and the elbow ring (6) is placed thereon, and the joint surface is plated with gold. Place the strained metal lid CF). Then, by passing this through a heating furnace], the wax elbow ring (6) is melted and the metal lid σ) is welded to the container r).

In this way, in the conventional hermetic sealing method,
The ring for deaf elbow (6), the metal lid CI) and the tube container (placed on top of each other) were formed individually, but the ring for deaf elbow () was formed extremely thin as mentioned above. This makes it extremely difficult to align the solder elbow ring (@) and the metal lid (A) to the metallized layer of the container (Xu). This increases the working time and The manufacturing process is poor due to the occurrence of defective products due to the inaccuracy of positioning, which has become an important issue for the manufacturing technology of semiconductor devices.

As a solution to this problem, it is conceivable to integrate the separately formed ring for the elbow (6) and the metal lid (n) by fusing them together in some way, but Needless to say, there are the above-mentioned problems with respect to alignment.

The present invention has been made in view of the above-mentioned disadvantages, and includes a step of first forming a metallized layer on the peripheral edge of the ceramic lid, and then performing a metallization and cutting process on this metallized layer, and then a layer on the middle layer of the metallized layer. The present invention provides a hermetic sealing method for a semiconductor container that can be sealed in a short time by employing a process for forming a meltable metal layer on the semiconductor container. Hereinafter, the configuration and the like will be explained in detail with reference to the embodiment shown in the drawings.

FIG. 2 is a sectional view of a container showing the hermetic sealing method for a semiconductor container according to the present invention. In this figure, the same members as those shown in FIG. First, a ceramic flat plate is cut into a predetermined size corresponding to the container (4) to form a ceramic lid (ceramic lid side), and a ceramic lid (ceramic lid side) is formed by cutting a ceramic flat plate into a predetermined size corresponding to the container (4). A metallized layer (!I) whose main component is molyb 17 or a high melting point metal such as tungsten is formed at a position corresponding to the metallized layer (5). Next, by performing plating treatment on this metallized layer (a), a plating layer (10) of nickel, aluminum, etc. is formed, and this plating layer (10)
A fusible metal layer (11) for welding the container (4) and the ceramic lid (8) is formed thereon.

The ceramic lid (8) integrally formed with the meltable metal layer (11) is placed on the opening side end surface of the container IB (4) so as to overlap, and is passed through a heating furnace. C. The meltable metal layer (11) is melted to form a ceramic i.
Weld i@) to container (4)K.

Note that the metallized layers (5) and (9) to be formed on the container (4) and the ceramic lid 01) are generally formed by printing a paste made of metal powder, glass frit, etc. on the ceramic and firing it in a firing furnace. Polymer is formed by metallization method. The fusible metal layer (11) can be formed on the surface of the plating layer (10) by immersing the ceramic lid (@) on which the plating layer (10) is formed into a melting tank in which the fusible metal is melted. It is easily formed because meltable metals are fused together.

In the above embodiment, the fusible metal layer (11) is formed integrally with the ceramic lid, but the metallized layer (1) formed on the container (4) is plated and formed on this surface. Of course, a similar surface effect can also be obtained.

As explained above, according to the present invention, by the process of forming a fusible metal layer on a ceramic lid, members for welding, which were conventionally difficult to handle and required time to align, can be handled as waste. Can be integrally formed with different ceramic lids.

Therefore, in the 7%-meshing process, alignment can be accomplished in a short time and accurately, resulting in improved productivity and manufacturing yield.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a container showing a conventional hermetic sealing method for a semiconductor container, and FIG. 2 is a sectional view of a container showing a hermetic sealing method for a semiconductor heavy container according to the present invention. (1)... Semiconductor element, (4... Container, (8)
...Ceramic lid, Φ) @#@・Metalized layer, (11
)・Fist: Molten metal layer. Agent Shin Kuzuno (1 other person)

Claims (1)

[Claims] In a method for temporarily holding a container made of ceramic having a recessed part for storing a semiconductor and having a metallized layer formed on the opening end, a metallized layer is formed on the peripheral part of the ceramic lid that is joined to the opening end. step 1 of forming a fusible metal layer on the plating layer; and a step of superimposing the ceramic lid on the open end of the container and heating it. A hermetic sealing method for semiconductor containers consisting of: