JPS58128729A - Manufacture of semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma CVD film growth method, in the 1,400-year equipment manufacturing industry, under the condition of relatively Ia of several tens of C.
According to the conventional method, the wafer is treated with wet etching or the like before plasma CVDf&, and after cleaning, the wafer is placed in a plasma device for plasma CVD processing. In the Glazma OVD method, when plasma is generated after flowing a reactive gas, unreacted gas is absorbed on the surface of the wear 1, and a predetermined film is grown on top of the unreacted gas, resulting in depressions with poor fitting strength.

The present invention has been made in view of the above-mentioned points, and includes a step of processing a substrate in a non-oil gas plasma in a plasma apparatus, and a process of processing the substrate in a non-oil gas plasma in the apparatus. The present invention provides a complete method for manufacturing a semiconductor device, which includes a step of supplying all gases and reaction gases and forming a plasma CVD film on a substrate.

Embodiment 1 of the present invention will now be described.

The present invention performs plasma OVD generation in a surface activated state by continuously performing plasma OVD generation and quefer pretreatment before generation in the same device, thereby achieving stable CVD.
It is used to obtain a film.

FIG. 1 is a cross-sectional view of the plasma CVD apparatus, in which 1 is a bell jar, 2 is a lower electrode, 3 is an F-section electrode, and a substrate 4 is placed on top of this by 411! place 5 is a heater and a C3rlb oscillator, which are connected to the E section electrode 2;

The lower electrode 3 is connected to a bell jar IK wire, and the bell jar is grounded. 7 and d are an inert gas line and a reaction gas line connected to the gas introduction t9, and 10 is a gas exhaust chamber for evacuation.

Next, using the above plasma device 111t-, poly 7 is applied on the substrate.
We will describe the process that produces the recon film.

The wafer is placed in a plasma device, evacuated, and an inert gas is introduced from an inert gas introduction line.

Operate the high-frequency excavator and pre-treat the substrate entirely in an inert gas plasma.

A mixed gas of an inert gas such as Ar, He, No, etc. and a reactive gas of 8LH is introduced from the inert gas introduction line and the reactive gas introduction line/8 to generate a plasma CVD film on the substrate.

After forming a plasma OVD film with a predetermined concentration, the supply of reaction gas and the operation of the RF oscillator are completely stopped.

At 杢＠明, the pretreatment in inert gas plasma is 2 to 10
The degree of separation and film formation is 10 to 60 minutes.

As described above, an OvD film with high adhesion and adhesion can be formed by switching the introduced gas, making the pretreatment and production continuous, and allowing the film to be formed on the substrate in an active state.

[Brief explanation of the drawing]

The figure is a sectional view of a plasma 0VD device used in the present invention. 1: bell jar, 2: upper tffl, 3: F[electrode, 4: substrate%6: RF,'/: inert gas line, 8
: Reaction gas line, 9 gas inlet pipe% 10: exhaust pipe)

Claims (1)

[Claims] a step of treating the substrate in an inert gas plasma in a plasma device, feeding the entire illegal gas and reaction gas into the device;
A method for manufacturing a semiconductor device featuring a process 8i for forming a plasma CVD film on a substrate.