JPS58119279A - Storage type photoelectric conversion device - Google Patents
Storage type photoelectric conversion deviceInfo
- Publication number
- JPS58119279A JPS58119279A JP57001493A JP149382A JPS58119279A JP S58119279 A JPS58119279 A JP S58119279A JP 57001493 A JP57001493 A JP 57001493A JP 149382 A JP149382 A JP 149382A JP S58119279 A JPS58119279 A JP S58119279A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- maximum
- photoelectric conversion
- maximum value
- storage time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は蓄積型光電変換装置に関し、特に、その蓄積時
間の制御のための改良に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a storage type photoelectric conversion device, and in particular to an improvement for controlling the storage time thereof.
従来、この極の蓄積型光電変換装置において正しい蓄積
時間を制御するためには、1)前回蓄積時の信号の大小
により蓄積時間を試行制御して行く方法や、2)オーバ
ー・フローした光電荷の有無を検知して蓄積を完了する
方法が有るが、1)の場合は前回の試行に依っているた
めに急な状態変化等に正しい蓄積時間を得るまでに時間
がかかり、又、2)の場合は、少数のビットでは有るが
、オーバー嗜フローのために信号がクリップしてしまう
とNう欠点が有った。Conventionally, in order to control the correct accumulation time in this kind of accumulation-type photoelectric conversion device, there were two methods: 1) trial control of the accumulation time based on the magnitude of the signal during the previous accumulation; There is a method to complete the accumulation by detecting the presence or absence of the error, but in the case of 1), since it depends on the previous trial, it takes time to obtain the correct accumulation time in case of a sudden change in state, and 2) In this case, although the number of bits is small, there is a drawback that the signal may be clipped due to overflow.
本発明は上述従来例の欠点を除去することを目的とした
もので、適正且つ合理的な蓄積時間の制御と同時にオー
バーやフロー直前の、即ち最大輝度のビットを知る事が
出来、相関検知等の手がか以下、添付の1面を参照して
本発明の一実施例を説明する。The purpose of the present invention is to eliminate the drawbacks of the conventional example described above, and it is possible to control the accumulation time appropriately and rationally, and at the same time to know the bit immediately before overflow or overflow, that is, the maximum brightness bit, and to detect correlation, etc. An embodiment of the invention will now be described with reference to the accompanying drawings.
送端子6からの入力で閉じ、クロック8で並列一端子1
0に出力する様にしたものである。Closed by input from sending terminal 6, connected to parallel terminal 1 by clock 8
The output is set to 0.
変換素子1〜4が飽和する以前で、かつ、飽和する直前
の大きな出力の得られる時に行わなくてはならない。This must be done before the conversion elements 1 to 4 are saturated and when a large output can be obtained just before saturation.
このため本実施例においては、端子11からのクロック
をカウンター12で計数し1この計数値により選択スイ
ッチ16を順次オンして、即ち1順次元電情報を選択し
てFgT14と抵抗15にょシ光電量を非破壊で端子1
6に読み出して、このレベルの最大値の判定により最大
光電量の飽和直前に転送する事が出来る様にしたもので
ある。この様な順次読み出しにより読み出し器のわずか
な電荷流出があっても順次読み出しのためクロス・トー
クがわずかに生じるだけで光電情報の特徴をそこなわず
に飽和検知が可能になる。Therefore, in this embodiment, the clock from the terminal 11 is counted by the counter 12, and the selection switch 16 is sequentially turned on based on the counted value, that is, the first sequential electrical information is selected, and the FgT 14 and the resistor 15 are switched on. Terminal 1 with a non-destructive amount
6, and by determining the maximum value of this level, it is possible to transfer just before the maximum amount of photoelectric charge is saturated. Due to such sequential readout, even if there is a slight charge leakage from the readout device, only a slight crosstalk occurs due to the sequential readout, and saturation detection is possible without damaging the characteristics of the photoelectric information.
又カウンター12を前回走査時の明部、即ち、端子1〜
16の出力大のものに限定して選択する様にする事によ
り、よりクロース・トークを少なくしつつ最大蓄積を検
知する事も可能である。In addition, the counter 12 shows the bright area from the previous scan, that is, the terminals 1 to 1.
By limiting the selection to those with the highest output of 16, it is possible to detect the maximum accumulation while further reducing cross talk.
又相関検知として用いる場合には、最大値(ピーク値)
回路17によシ最大時にラッチ18に選択アドレスをラ
ッチして端子19に最大値のアドレスとして出力する様
にすることが出来る。Also, when used for correlation detection, the maximum value (peak value)
The circuit 17 can be configured to latch the selected address in the latch 18 at the maximum value and output it to the terminal 19 as the maximum value address.
この様なユニットを第2図の様にセンサー20゜21と
して用い、端子22〜24にシフト・レジスター・クロ
ック、転送りロック、選択クロックを与え、そして両党
電部上に固足レンズ25及びに
撮影レンズの繰り出した連動する可動レンズ26を用い
て物体の像を形成する様にして基線距離計を形成する。Such a unit is used as a sensor 20, 21, as shown in FIG. A baseline rangefinder is formed by forming an image of an object using the interlocking movable lens 26 extended by the photographing lens.
そして両センサー20.21の最大ト
値アドレス信号をマグニチュード働コン/−?、−ター
に与え、その大小、RIIち、両センサー20.21の
最高輝度エレメントの位置の差によって、LED28.
29を抵抗30.31を通じて点灯制御する事により1
最高輝度エレメントの位置比較か、前記蓄積時間制御と
共に容易に行える。Then, the maximum value address signals of both sensors 20 and 21 are set to the magnitude /-? .
1 by controlling the lighting of 29 through resistors 30 and 31.
Comparison of the positions of the highest brightness elements can be easily performed together with the storage time control described above.
熱論この相関は最大輝度の物点のみについてなので、詳
細に祉公知の様に2儂信号の最大相関、即ち、最高に但
ているビットずれ量による検知が好ましいが、この除に
おいても全ビットずれ菫について演算を行わずに上述の
最大輝度エレメントの位置信号の差のビット数の周辺の
ピットスれ蓋のみの演算で済むと言う利点が有る。Thermal theory: Since this correlation is only for the object point with the maximum brightness, it is preferable to detect the maximum correlation between the two signals, that is, the maximum amount of bit deviation, as is well known in the public domain. There is an advantage in that only the pit cover around the number of bits of the difference in the position signal of the maximum brightness element described above needs to be calculated without calculating the violet.
前記第1図の実施例中のカウンター12はCODを用い
たリングのカウンターにすればアナログ・シフト・レジ
スターとしてCCDを使ったセンサには構造上容易であ
る。If the counter 12 in the embodiment shown in FIG. 1 is a ring counter using a COD, it is structurally easy to use as an analog shift register for a sensor using a CCD.
上述の様に本発明の光電変換装置によれば選択ターFに
よる蓄積制御により非破壊で正しい蓄積時間が得られる
し又像信号もクリップせず正しく得られる。As described above, according to the photoelectric conversion device of the present invention, the correct accumulation time can be obtained non-destructively by the accumulation control by the selector F, and the image signal can also be obtained correctly without clipping.
加えて相関演算の重要な指標としての最大値アドレスが
容易に得られ、複雑な演算を容易に実施出来る。In addition, the maximum value address, which is an important index for correlation calculations, can be easily obtained, and complex calculations can be easily performed.
第1図は本発明の一実施例の概略を示すブロック図、
第2図は第1図示光電変換装置を用いた距離計の例を示
すブロック図である。
1〜4・・・・・光電変換素子、5−・・0転送スイツ
チ、9@・−・・出力アンプ、12・・・・・カウンタ
ー、13・・・・・選択スイッチ、14・・拳・dFE
T。
15・0・・抵抗、17・・・・・最大値検知回路、1
日・・・・・ラッチ。FIG. 1 is a block diagram showing an outline of an embodiment of the present invention, and FIG. 2 is a block diagram showing an example of a distance meter using the photoelectric conversion device shown in FIG. 1 to 4...Photoelectric conversion element, 5-...0 transfer switch, 9@...Output amplifier, 12...Counter, 13...Selection switch, 14...Fist・dFE
T. 15.0...Resistance, 17...Maximum value detection circuit, 1
Day...Latch.
Claims (1)
て、順次選択可能な選択的非破壊読み出蓄積型光電変換
装置。A selective non-destructive readout storage photoelectric conversion device that can be selected sequentially in a storage photoelectric conversion device comprising a large number of photoelectric conversion elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57001493A JPS58119279A (en) | 1982-01-07 | 1982-01-07 | Storage type photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57001493A JPS58119279A (en) | 1982-01-07 | 1982-01-07 | Storage type photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58119279A true JPS58119279A (en) | 1983-07-15 |
Family
ID=11502973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57001493A Pending JPS58119279A (en) | 1982-01-07 | 1982-01-07 | Storage type photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58119279A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175469A (en) * | 1987-12-29 | 1989-07-11 | Kyocera Corp | Image sensor output device |
JPH07307888A (en) * | 1994-12-26 | 1995-11-21 | Kyocera Corp | Image sensor output device |
JPH0856304A (en) * | 1995-09-14 | 1996-02-27 | Olympus Optical Co Ltd | Photoelectric converting device |
WO2002047377A1 (en) * | 2000-12-07 | 2002-06-13 | Hamamatsu Photonics K.K. | Photosensor and photosensing method |
WO2005006738A1 (en) | 2003-07-02 | 2005-01-20 | Micron Technology, Inc. | Cmos imaging for automatic exposure control and correlated double sampling |
US7332703B2 (en) | 2004-03-22 | 2008-02-19 | Micron Technology, Inc. | Imaging structure including a pixel with multiple signal readout circuits and methods of operation for imaging structure |
-
1982
- 1982-01-07 JP JP57001493A patent/JPS58119279A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175469A (en) * | 1987-12-29 | 1989-07-11 | Kyocera Corp | Image sensor output device |
JPH07307888A (en) * | 1994-12-26 | 1995-11-21 | Kyocera Corp | Image sensor output device |
JPH0856304A (en) * | 1995-09-14 | 1996-02-27 | Olympus Optical Co Ltd | Photoelectric converting device |
WO2002047377A1 (en) * | 2000-12-07 | 2002-06-13 | Hamamatsu Photonics K.K. | Photosensor and photosensing method |
WO2005006738A1 (en) | 2003-07-02 | 2005-01-20 | Micron Technology, Inc. | Cmos imaging for automatic exposure control and correlated double sampling |
US7105793B2 (en) | 2003-07-02 | 2006-09-12 | Micron Technology, Inc. | CMOS pixels for ALC and CDS and methods of forming the same |
US7312431B2 (en) | 2003-07-02 | 2007-12-25 | Micron Technology, Inc. | CMOS imaging for ALC and CDS |
US7642497B2 (en) | 2003-07-02 | 2010-01-05 | Aptina Imaging Corporation | CMOS pixel and imaging device supporting automatic light control (ALC) and correlated double sampling (CDS) |
US7332703B2 (en) | 2004-03-22 | 2008-02-19 | Micron Technology, Inc. | Imaging structure including a pixel with multiple signal readout circuits and methods of operation for imaging structure |
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