JPS58115448A - Photoconductive member - Google Patents

Abstract

PURPOSE:To obtain a photoconductive member having excellent characteristics for practical use, by constituting so that the first layer area has a layer area containing impurities for controlling a conductive type, in the photoconductive member having the second layer area consisting of silicon atoms and carbon atoms. CONSTITUTION:A photoconductive member which is stable in its electric, optical and photoelectric characteristics without depending on its utilizing environment, is excellent in durability, moisture resistance, etc., and has an excellent characteristic for practical use is obtained, by providing a supporting body 101 for the photoconductive member, the first area 103 which is constituted of an amorphous material which has silicon atoms as its base body and at least one of a hydrogen atom or a halogen atom as its constituent element, and shows a photoconductive property, and the second layer area 104 constituted of an amorphous material which has silicon atoms and carbon atoms as its constituent elements, on said supporting body, and providing a layer area 105 containing impurities for controlling a conductive type, on the supporting body side of the first layer area.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides light that is sensitive to electromagnetic waves such as f (light in a broad sense in ζζ, indicating ultraviolet light, visible light, infrared light, X light, γ-, etc.). Regarding conductive members: As a photoconductive material for forming a photoconductive layer in a solid-state imaging device or a self-forming member Nakahara bucket loading device for electrophotography in the image forming field, the photoconductive material has a bird's sensitivity and a 8N ratio [Photoden 151
(IP) / lucid current (fd)), has high absorption and spectral temporality of the electromagnetic wave to be irradiated, has fast photoresponsiveness, and has a desired dark resistance value; In the past, solid-state imaging devices have been praised for their characteristics, such as being non-polluting to the human body during use, and being able to easily process IA images within a predetermined time. In the case of electrophotographic image forming members that are incorporated into electrophotographic devices used in offices, the above-mentioned non-pollution during use is an important point. Amorphous silicon (hereinafter written as *a-8i) is a photoconductive material that is attracting attention. For example, DE 2746967 and DE 2855718 describe its application as an electrophotographic image forming member, and DE 2933411 describes its application to a photoelectric conversion/reading device.

1f[I et al., the photoconductive member having the photoconductive layer composed of conventional a-81 has electrical, optical, and photoconductive properties such as dark resistance value, photosensitivity, and photoresponsiveness, and Improvements have been made in terms of repeatability, use environment characteristics, and stability over time, and durability. There is room for improvement. For example, when applied to electrophotographic image forming members, 1 in 9 cases.
In the past, when trying to achieve high light sensitivity and high dark resistance at the same time, a residual potential remained during use, and this photoconductive member often deteriorates when used repeatedly for a long time. There have been many disadvantages such as the accumulation of fatigue caused by this, and the so-called ghost phenomenon in which a JA image occurs.

In addition, when forming a photoconductive layer using a-8i material, in order to improve its electrical and photoconductive properties, water atoms are replaced with halogen atoms such as fluorine atoms and chlorine atoms, and electrical Boron atoms, phosphorus atoms, etc. are included in the ninth part of conductive type 11411, and other atoms are included as constituent atoms in the photoconductive layer for the purpose of improving other properties, but these are not included in 0. Depending on the MO method, problems may arise in the electrical, optical, or photoconductive properties, use environment characteristics, and pressure resistance of the formed optical layer.

Namely, 1. For example, the amount of photocarriers generated by light irradiation in the formed photoconductive layer is not sufficient, or the image transferred to the transfer paper has what is commonly called "white spots". Image defects that are thought to be caused by local discharge breakdown phenomena, and areas commonly called "white streaks" that are thought to be caused by rubbing when using a blade for cleaning, for example.
A l1mA defect occurred. In addition, when used in a humid atmosphere (9#) or left in a humid S atmosphere for a long time and used directly, the so-called blurring of the image often occurs. While improvements are being made, when designing photoconductive members, it is necessary to devise ways to solve all of the above-mentioned problems. It's a-8iK
IIt, electrophotographic image forming members, solid-state imaging devices, reading devices, etc. K11l! We have continued to comprehensively research reading comprehension from the viewpoint of applicability as a photoconductive material and its ease of administration. Containing amorphous material n, /N aqueous amorphous silicon, halogenated amorphous silicon, or halogen-functionalized hydrogenated amorphous silicon [hereinafter, r a-8i (H, A photoconductive member prepared by specifying the structure of a photoconductive member having a photoconductive layer consisting of It does not exhibit inferior characteristics, but is superior to conventional photoconductive materials in all respects, and has characteristics that have been beautifully carried over as a light guide 'wtm material for younger sister 11Cct child photography. The camellia shines in the fact that it highlights the fact that it possesses such qualities.

The electrical, optical, and photoconductive properties of the present invention are virtually always stable, with almost no dependence on the environment in which it is used.9 It is also highly resistant to light fatigue, and does not deteriorate or break even when the bell is used. The main object of the present invention is to provide a photoconductive member which has excellent durability and moisture resistance, and has no or almost no residual potential.

Another object of the present invention is that when the present invention is applied as an image forming member for electrophotography, the charge retention ability during the round charging process for electrostatic image formation is sufficient, and the ordinary electrophotographic method can be applied very effectively. An object of the present invention is to provide a photoconductive member having excellent electrophotographic properties.

Still another object of the present invention is to obtain high-quality images with no self-repair defects or unnatural blurring, low density, clear halftones, and high resolution during long-term use. It is an object of the present invention to provide a photoconductive member for electrophotography that can be easily used.

Yet another object of the present invention is high photosensitivity.

Another object of the present invention is to provide a photoconductive member having a high 8N ratio and high voltage resistance.

The photoconductive member of the present invention includes a support for the photoconductive member, and an amorphous material provided on the support and having silicon atoms as a matrix and at least one of hydrogen atoms or halogen atoms as a constituent element. and a first layer region that exhibits photoconductivity.

The 20th Masuzuke Castle is made of a non-insect material whose constituent elements are 7 licon atoms and carbon atoms.

said 10th
Masuzukejo is characterized by having a layer region (I) containing impurities that dominate its support m VCS Den 4 noodles.

The photoconductive member of the present invention can solve the above-mentioned problems,
Extremely good, electrical, optical.

In particular, exhibiting photoconductive properties, durability, and field stability,
When applied as an electrophotographic imaging member, 1j
There is no effect of the cooking potential on the II Asugi formation, its electrical timing is stable, it is highly sensitive, and has a high 8N ratio, and has excellent light fatigue resistance, repeated use characteristics, temperature resistance, Because of its excellent pressure resistance, it is able to stably produce high-quality images with less obscurity, clear halftones, and high resolution.

Hereinafter, the photoconductive member of the present invention will be explained in detail.
Explain in detail.

FIG. 1 is a schematic block diagram schematically shown to explain the 71H111 composition of the photoconductive member of the present invention. The photoconductive member 100 shown in FIG. 1 is a support for a photoconductive member. 101, an amorphous layer 102 is provided, the amorphous layer 102 is made of a-81(n,x), has a photoconductive first layer region 103 and silicon It has a layered structure consisting of atoms and a 20th layered region 104 made of an amorphous material whose constituent elements are atoms and carbon atoms.

The tenth layer region 103 has a layer region (I) 105 containing an impurity that controls the conductivity type on its support 10i 11. The support used in the present invention is either electrically conductive or electrically insulating. It's okay. Examples of the conductive support include sNxCr t stainless steel.

At, Cry Mo, Au Nb, Ta, V
, Tie Pt.

Examples include metals such as Pd and alloys thereof.

Polyester is used as the electrically insulating support.

Polyethylene, polycarbonate, cellulose.

Acetate, polypropylene, polyvinyl chloride.

Synthetic WOW films or sheets, and glass made of polyvinylidene chloride, polystyrene, polyamide, etc.

Ceramics and paper sheets are commonly used. These electrically insulating supports are preferably treated with a grade 4 electrolyte on at least one surface, and are coated with a grade 4 electrolyte and coated with another layer on the round side. For example, in the case of glass, the optical surface is preferably provided with NlCr, ・At, Cr, Mos Out I
r, Nbw Ta, V, Ti.

Pt, Pd g In1 (% g 5nO= @
Conductivity can be imparted by providing a thin film made of ITO (InlOm + SnO*), etc., or if 74 km of synthetic resin such as polyester film is used, @N
iCr @ Ats Ag tPd, Zn, Ni
, Aut Cry Mo, Ir, Nb, Tap
A thin film of metal such as V, 'RI, PT, etc. is provided on the surface by vacuum & vacuum, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support may be any shape such as a circular shape, a belt shape, a plate shape, etc., and the shape is determined depending on the need.
If 00 is used as an electrophotographic image forming member, it is desirable to use an endless belt or cylindrical shape for continuous high-speed copying. The thickness of the support is determined appropriately so that a desired photoconductive member is formed, but if flexibility is required as a photoconductive member, the support can sufficiently function as a support. It is made as thin as possible within the range.

Heigo et al., In such cases, in manufacturing the support and handling
From the point of view of mechanical strength, etc., it is usually set to lOμ.

In the present invention, the first layer region 103 constituting a part of the amorphous layer 102 formed on the support 101 is formed at the edge of the support 101 in order to effectively achieve the purpose. A pigeon-filled area containing non-#1IIi substances that dominate the conductivity type in the substratum region (
I) has 105. The impurities contained in the layer region (I) 105 include atoms belonging to Group V of the periodic table as p-type impurities, such as ' e kl + Ga @
Preferred examples include In g TL, and examples of n-type impurities include atoms in group V of the periodic table, such as s
N e P e As @ Sb tBi etc. are discussed as suitable, but in particular B + Ga *
P*sb'% is optimal.

The impurities contained in the layer region (I) 105 have a practically uniform distribution in the layer thickness direction of the layer region (I) 105 and in a plane parallel to the interface with the support 101. In the present invention, the amount of impurity doped into the layer region (I) 105 to have the desired conductivity type is determined by the amount of impurity contained in the layer region (I) 105 so as to be a secret (I) It is determined appropriately depending on the electrical and mechanical properties desired for 105 in relation to its layer thickness, but in the case of impurities in the brown m group of the periodic table, it is usually 1.0-3. X 10'atomic
pPm I preferably 5.0 to 1 x 104 atoms
c pPm s M suitably 1 x 10% ~ 5 x 10”
Atomic I)Pm is preferable, and in the case of non-#IIAW of Group V of the periodic table, it is usually 01 to 5.
X 10"atomic ppm, preferably 0.5
~lXl0"atomic Ppm Shun optimally 1.O
It is desirable that the amount is 800 atomic ppm.

In the present invention, for example, a glow discharge method,
This is done by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, by a glow discharge method, s a St (H*
) In order to form an amorphous layer composed of A raw material gas for introduction is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and a-
If you form a skin consisting of 81(H,X), it will be a storm. In addition, when forming by sputtering method, for example, tf Ar
When sputtering a target composed of St in an atmosphere of an inert gas such as H or a mixed gas of these gases, 0 hydrogen atoms and/or 10 hydrogen atoms (2) are introduced. ◇ The raw material gas for supplying 81 used in the present invention is s StL s S1*Hs e 81s mountain t 81
4H 1 fathom of gaseous or gasifiable silicon hydride (
Silanes) can be used effectively, and in particular, δ
lHa e S1*Hs is preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gas, halides, interhalogen compounds, and gaseous states such as halogen/f-substituted silane conductors. Preferred are halogen compounds that can be used or gasified.

Further, silicon compounds containing halogen atoms in a gaseous state or which can be gasified, which are composed of a silicon atomic layer and halogen atoms, are also effective in the present invention.

Specifically, the halogen compounds preferably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine BrF, C1F, and CLFB.

BrF,e BrF5 *' IFm t IFv @
Interhalogen compounds such as ICtp IBr can be contained.

Specifically, examples of silicon compounds containing halogen atoms, silane I conductors substituted with halogen atoms, and silane I conductors include 8
1Fa e 811F @ w 81C4t 5iBra
Preferred examples include silicon halides such as the following.

When a silicon compound containing such a halogen atom is used to form the moldy photoconductive member of the present invention by a glow discharge method, silicon hydride gas is used as a raw material gas capable of supplying sl. Otherwise, a layer consisting of 1-81 containing halogen atoms as a constituent element can be formed on a predetermined support.

When manufacturing pigeons containing halogen atoms according to the glow discharge method, basically, silicon halide gas, which is a raw material gas for supplying Sl, and gas, etc., are combined at a predetermined combination ratio and gas flow rate. A first layer region is formed on a predetermined support by introducing a first layer region @1 into the deposition chamber and generating a glow discharge to form a plasma atmosphere of these gases. However, in order to introduce bulky water atoms, a predetermined amount of a silicon compound gas containing bulky water atoms was further mixed with these gases to form a layer for 4 hours.

Moreover, each gas cannot be used not only individually but also by mixing a few ellipticals at a certain mixing ratio.

To form a layer consisting of a-81 (H,
For example, in the case of a sputtering method, a target made of RJ81 is used and sputtered in a predetermined gas plasma atmosphere, and in the case of an ion blasting method, a target made of RJ81 is used as an IUI source. The silicon MII source is placed on a boat and is heated to 11 km using the resistance heating method or the Hiroelectone beam method (III method). This can be done by passing through the air.

At this time, hK, which introduces halogen atoms into the layer formed in either the sputtering method or the ion grating method, is performed by introducing a gas of the 0P--dane compound or a silicon compound that meets the halogen atoms into the deposition chamber. In addition, in the case of introducing water bulk atoms, Kd, the raw material gas for introducing water bulk atoms, such as Peng or i as described above A plasma atmosphere of the gas may be formed by introducing a gas such as the above into a deposition chamber for sputtering.

In the present invention, the above-mentioned halogen compounds or silicon compounds containing tso-dan are effectively used as the raw material gas for introducing tso-dan, but in addition to y, [ 1゜HBr, HI 11 O
Halogen compound, Si%F, 81%I.

8kHz@C1@g 81H(J@, Sin, Br
l, 5iHBr@ etc./% Q-gen substituted water voluminized silicon,
Halides having a hydrogen atom as one of their constituents, which can be oxidized into scum or gas, can also be cited as effective starting materials for forming the layer region.

These halides containing hydrogen atoms have a layer formation rate of 0ra.
At the same time as the introduction of halogen atoms into the K layer, the control of electrical or photoelectric properties is also introduced, as well as the highly bulky atoms.
Used as h charge.

Introducing bulky water atoms into the layer structurally, Nisha, above e)fl
It is also possible to generate a discharge by coexisting hydrogenated hydrogen gas such as BK, or group-1S11, B11, 81, etc. with a silicon compound for supplying Si in the deposition chamber. .

For example, in the case of the reactive sputtering method, use the S1 target, and make sure to supply the O gas for introducing O gas and the secondary gas! Depending on the situation, inert gases such as He and hydrogen can also be introduced into the deposition chamber. By sputtering the above-mentioned 8i target), the Ka
When a layer consisting of -8i (H,

Photoconductive part #0j11 is formed by overlapping 1jllKi.
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the amounts of hydrogen atoms and halogen atoms contained in the G layer region is usually 1 to 40 atoms, preferably Kti5
Hydrogen atoms (H) and/or halogen atoms (X) contained in the 10 layers are preferably ~30 atomia-
To control the O amount, for example, the support temperature or/and the amount introduced into the deposition system of the starting materials used to contain bulky atoms (H) or halogen atoms (X);
All you have to do is control the discharge force, etc.

In this article, the diluent gas used in the first (0 layer region is formed by glow discharge method or sputtering method) is a gas such as H.

Suitable examples include N@, Mr, etc. II to form the first layer region 103k! By doping Km with nine impurities, the layer region (I) 105 is
To provide the layer region 103, an OMA material for impurity introduction may be introduced into the deposition chamber ψ along with the main material to be formed in the layer region 103 of stripe 1 using a gas foreground during layer formation. The raw material for introducing such impurities is gaseous l at room temperature and pressure.
It is desirable to use IO or at least one that can easily form a scum under the layer forming conditions. Specifically, PHa * PwHa
e PFa sPF@, Pct@, AsH4
, AsF3 , Mu mT! ”@, -αB, 5bH
B, BktJ? φ@8bF@ @ BiH@
, BP, , BCIs , BBrl , Hl
l day-夛 B4'l&@e BsHe eB,
Hll, B@H1@, B@Hu, B@H14
HAtC1B, GaCII, InC1B.

Examples include TlC11 and the like.

Constituting a part of the 10th layer region 103, the layer region (I) 10
Layer region (n) provided on 11 of 5 106 fi,
In the photoconductive member Wc to be produced, the main objective is to obtain the desired acceptance potential characteristics, to efficiently generate photocarriers by light irradiation, and to efficiently transport carriers in the photo in a predetermined direction by the generation of a ridge. It is generalized to the shrine. Layer area (
b) 106 is based on this viewpoint and the layer area 1 oso lower 1
In relation to the functional characteristics of the layer region (I) 105 provided in the layer region (I) 105, the layer region (I) 105 is formed as a layer region that does not contain the key impurities contained in the layer region (I) 105.

The WaO discharge power for forming each of the layer region (I) 10B and the layer region (B) 1G11 is determined as appropriate depending on the characteristics required for each layer and the device 4IO. 250W, preferably 80-15
It is desirable that it be 0W.

10th Layer Region 1980 - Layer Region (I) 10 Configuring Art
The thickness of 50 layers is adjusted as desired so that a desired acceptance potential is obtained and photocarriers are efficiently generated and transported by irradiation with light having desired spectral characteristics. 1-100#, preferably 1-8
It is desirable that the time be 0 s, and optimally 2 to 50 s.

With overlapping QljK&'W, layer area (I) 1050 layer thickness is:
Axillary area α) 1 in 105! Imparting the desired characteristics - Misfires -
# Layer area (I) as appropriate depending on the achievement of the O purpose
10! #Relationship with the content of impurities contained in PKKN%A can be determined as appropriate O, which is preferably 0.05 to 8 μ, optimally 0.07 to 511 I; S forming layer region (I) 105 and layer region (n) 106;
The temperature of the O support am can be changed as desired, but the temperature is 0 to 350°C, preferably 80 to goo°C, depending on the excess OS.
, the temperature is preferably 100 to 300°C.
The Il 120 layer area 104, which is formed on the Il layer area 103 and KIII, has a free image 107, and is mainly defective in moisture resistance, bone quality for continuous repeated use, pressure resistance, use potability, and durability. It is established to achieve the @0@ target.

Moreover, in the superposition 1jiK&h, 4 constituting the amorphous layer 102 is
j11C) layer 11 area 103 tojllll[) layer area 104
Since each of the amorphous materials forming the layer has a common structure of silicon atoms, chemically stable IkO is sufficiently ensured at the laminated interface.

However, the 20-layer region 1040 is composed of 0×C,−, which is formed by 0<X<1).
Formation is by sputtering method, ionization technique * y
These O manufacturing methods, which can be applied by T&S ion plate interpolation, electron beam method, etc., are subject to manufacturing conditions, equipment capital investment load, manufacturing scale, desired characteristics of the photoconductive S# to be manufactured, etc. The photoconductive member 'fr has the desired characteristics.
The sputtering method or the electron beam method has advantages such as relatively easy control of the manufacturing conditions for forming Jl, easy introduction of carbon atoms together with silicon atoms into the 1s20 layer region 104, etc. The ion blating method was successfully adopted.

1l12c) layer region 104 by sputtering method
In order to form this, by sputtering them in various gas atmospheres, targeting single crystal or polycrystalline 8i wafers and C wafers, or wafers containing a mixture of St and C. Just go.

For example, in one case using St Quahar and C Waeno 1- as targets, H., N@, Mur 111o
A gas for sputtering may be introduced into a deposition car for sputtering to form a gas plasma, and the above-mentioned 85 wafers and C wafers may be sputtered. By using a target chamber, a gas for sputtering is introduced into the equipment system, and sputtering is performed in the gas atmosphere. Using electron beam method
In the pigeon house, two tDs arrival boats each contain single crystal or polycrystalline high X* silicon and high purity Da2 Phite.
Each may be independently co-deposited by an electron beam, or deposited by an electron beam of silicon and dolphite in a desired mixing ratio in a single-layer boat. The ratio of silicon and carbon O contained in the former is controlled by changing the voltage of the electron beam Om1 for silicon and graphite, and for the latter, the mixing amount of silicon and graphite is determined in advance. Control the 0 ion plate in the armpit by %
/%, introduce sufficient O gas into the evaporation cylinder and apply high-frequency electric voltage to the i*5KtIA coil in advance to energize the chamber, and then use the electron beam method. Sl and C may be deposited.

The layer area 1G4 of l[2 in superposition @ is SO01! IIK is carefully constructed to give the desired properties to 9.

In other words, a material whose constituent atoms are Si and C, has a structural form ranging from a crystal to an atom, depending on the conditions of its creation, and an electrical property that ranges from electrical conductivity to electrical conductivity and insulation. Since it shows the properties between 0 and 0, and the properties between photoconductive and non-photoconductive properties, 1kh is
a-8ixC,-!, which has nine desired 4I properties depending on the purpose!
For example, to provide the 20th layer region 104 with the main purpose of improving pressure resistance, the a-81ICB-x should be selected according to the usage environment. It is produced as an amorphous material with pronounced electrically insulating behavior.

In addition, when the 20th layer region 104 # is provided mainly for the purpose of improving the use environment characteristics during continuous repeated use characteristics, #
i. The above degree of electrical insulation is relaxed by a certain degree of 11 degrees, and a-81zC1-z is created as an amorphous material having a certain degree of directivity with respect to the irradiated light.

A 20th layer region 1G4 consisting of the 10th layer region 103 is formed, and the temperature of the support during layer formation is a factor that influences the structure and properties of the formed layer. Due to the & factor, in the case of overlapping @, a-81x01-x having the desired properties can be created as desired, and there is a risk of layer formation *0 * The body temperature is strictly controlled. It is desirable to have an O that is superimposed.
The temperature of the 1lIO support that forms the layer region 1G4 is as follows:
The 20th layer region 104 is formed by appropriately selecting the optimal range (2) according to the difficulty of forming the 920 layer regions 1 and 4, preferably at 20 to sOO°C, 20 to 250°C.
It is desirable that the thickness of the intermediate layer can be controlled relatively easily in the 0-20 layer region 1040-form strength, as compared to the 4jAO method. For the purpose of shaving, sputtering method and electron beam method 0* use are used without shaving, but these 0
When forming the llI20 layer region 1G4 by the layer formation method, the weight 1', which influences the characteristics of the layer formation II discharge power created a-8iIC,-, as well as the support temperature described above, is Factors and factors that can be cited as one example are a-
Since 81xc, -1 can be produced effectively with high productivity, the O discharge power condition is preferably SOW ~ 250W, optimally SOW ~ 150W.

In superposition@, the above-mentioned range SO value is mentioned as the support temperature and discharge power OS desirable value II8 for creating the 20th layer region 104, but these O layer creation factors are independent. 20 layer region 10 consisting of the desired characteristic Oa -81101-X, but not O, although it can be determined separately.
4111°' It is desirable that the optimum value of each layer creation factor I is determined based on the reciprocal organic relationship of 4111°'. The amount of K atoms contained in the layer region 104 is the same as the production conditions of the 80th layer region 104 (D).
The desired percentage of achieving the 11IO objective is an important factor in the formation of the resulting layer.

In the present invention, 1O~7 contained in the 20th layer region 104
5 atomic is the most common type.

That is, the first Oa41xC1-! Ox If you do it with O Maki,
is usually rjQ, 1 to 0.99911 books, preferably 0.2
~a, 99, optimal VC #1L26 ~Q, I.

Superposition @ Klk 10 layer area 1040 layer thickness value II
- can be appropriately determined as desired depending on the initial O purpose to effectively achieve the 0-times goal of the present invention. Also, the layer thickness of the 20th layer region 1040 is
Even if the relationship between the 0 layer thickness and O is j1v%, it is desired that it is appropriately determined as desired under the organic relation IkO depending on the 411 kW required for each 0 layer region, and i is also O.

j! In order to obtain Km, it is desirable to take into consideration the productivity and mass production, and to reconsider even the economical 0 point. .01
~10s, preferably 0.02-5μ, optimally 0.04
~5s is desirable - is also O. Photoconductive layer member 1000 amorphous layer 102 in this JA beak
The inner layer thickness relationship between the first layer region 10g and the 20th layer region 1G4 constituting the layer is adapted to the purpose of the cutting device, imaging prosthesis, or electrophotographic forming member system to which it is applied. It is determined as appropriate according to desire.

That is, in the present invention, the above layer thickness relationship is between the first layer region 103 and the twentieth layer region 1 constituting the amorphous layer 102.
04 Each of the characteristics given by K is effectively utilized! ii The purpose of the beak is effectively achieved by Keyaki △ 10, which is appropriately determined as desired, preferably @2O layer region 1040 layer thickness 1111 layer region 1
It is preferable that the thickness of the 030 layer be several hundred to 1,000 times or more.

Next, we will explain how to manufacture a photoconductive member formed by electrolysis.

The z-th figure shows an apparatus for producing a photoconductive member using glue electrolysis.

- On the middle O211~21@011 bomb, there are rounded Oj [family gases] that form the respective 0 layers of the present invention.
, 701 As an example, 211 is substituted with H. - to 8i11411s [1111 Kai99kai-2 is abbreviated as H. 0) cylinder, 213 is diluted with H.81, H,
Gas (Nj [9 99-1 and below 8 imports/stroke ◎) cylinder, 214 is diluted with H and 9 SiF, #x (g
J [9G, 91e 9-*hereinafter abbreviated as ssy, Am)
The cylinder, 21S, is a gas cylinder.

To react these gases, use a gas cylinder 211-21SOAk! 31-20,
The father confirmed that the leak pulp 206 was closed.
Inflow pulp 221~22s1 Outflow pulp 226~f! f
After making sure that the auxiliary pulp 241 is opened, the main pulp 210 is first opened to exhaust the inside of the reaction chamber 201 and the gas pipe. Next, the vacuum gauge 2420 reading is about 5 x 101 tor.
r At KNatsu9, if you fail O1 case if you supplement,
The 20 shutters are closed and connected to receive high-voltage power from the p1 power source @243. Gas cylinder 211, J Sin, /) I @ gas, gas cylinder 212
YO) Toritame/i male, open the pulps 231 and 232 and adjust the pressure of the outlet pressure gauges 236 and 237 to 1#/-,
Gradually remove the inflow pulses 7' 221 and 222,
Mass flow controller 216-217 Km people 0
Subsequently, the outflow pulps 226, 227 and the auxiliary pulp 241 are gradually opened to allow each male to flow into the reaction chamber 201. At this time, the gas flow rate, B, lis/
Km extraction pulp 226, 227 t11111 was applied so that the ratio of the seaweed gas flow rate became the desired O value, and the reaction ji
1201PJO Press the vacuum gauge 24 so that the pressure reaches the desired value.
201! Adjust the main pulp 210C) 11 ports while looking at the temperature of the board 2090 and the heating heater 20.
11) After confirming that the temperature is set at 50~400''OO, set the electric power II C3 to the desired power and generate a glow electric current for the desired time in the reaction chamber 201 to coat the substrate Kjllo layer. A layer region (I) constituting the region is formed.

Next, the 75i constant pulp is closed and the reaction volume 201 is OB, H, /l (*Gas 04
Stop only the person, and then continue to apply glow electricity in the reaction chamber 201 for a desired time to form a desired layer thickness 0 layer region (b) ◎ If the first O layer region contains ^rodan atoms, the above lXK et. Eh! To form a layer region in which 1iiF, /ib is further added and sent into the reaction chamber, first the shutter 205 is
open. The gas supply pulp in the pot is once closed, and reaction 11201 is sent to the main pulp! 1e & by fully opening], the exhaust is exhausted.

^ High axis degree silicon wafer 204-1 * and high M degree graphite 204 on 1 m to 20 m above which piezoelectric power is applied
-2 are installed at a desired area ratio. gas cylinder 2
15, Ar gas is introduced into the reaction chamber 201, and the internal pressure of the reaction chamber becomes 0.05 to 1 torr), J
A 20th layer region can be formed on the layer region lll.

Example 1 Using the manufacturing apparatus shown in Figure 2, the film thickness of the layer region (I) and the content of B atoms in the layer region (I) were set to A1 mm [a layer was formed on top]. ＼ Teitsu nine. Common manufacturing conditions for layer region (I) at this time are shown in the first JIK. Further, for each sample, a layer region (n) was laminated under the manufacturing conditions shown in Table 2, and a layer region (C) was laminated under the manufacturing conditions shown in Table 3.

The nine electrophotographic image forming members obtained in this way are installed in a copying machine, subjected to ** under the current conditions as shown in Table 5, and then transferred and fixed onto plain paper. You can also get a transfer image of one sheet. The good image samples obtained in this way are comprehensively evaluated for each item such as [density], [resolution], [tone reproducibility], and [imaging defects]. When compared, the results shown in Table 4 were obtained.

Table 1 Table 2 Table 3 Table 4 Evaluation Criteria A: Excellent B: j! l Good 0° Can be used satisfactorily for practical use ;D:
After laminating the layer region (I) and the layer region (Im) intermittently on the M substrate under the production conditions shown in Table 5 and Table 2, The layer region (C) is calculated using the content of C atoms in the layer region (C) and the layer thickness of the layer region (C) as parameters.
) are stacked together. The layer region (C) was formed under the same O production conditions as in Table IIIE3, with the layer thickness being varied.

The 1#,.'wE child's photographic lumen formed in this way was evaluated in exactly the same manner as in Example 1, and the results shown in Table 7 were obtained.

1Ii6 Table 6 Under the manufacturing conditions shown in Table 6, a layer region (I
), the layer area (n
) were laminated, and further layer region <C> was laminated under the manufacturing conditions shown in Table 3.

In addition, in forming the layer region (n), the manufacturing conditions were the same as in Table 2 except that the layer thickness was changed.

The thus obtained g/I forming member for electrophotography was evaluated in exactly the same manner as in Example 1, and was found to be 4.
The results shown in Table 8 were obtained.

tsB table evaluation criteria: A Excellent 2 B Good: C Sufficient for practical use: D Example 4 for practical use The layer thickness of the layer region (I) and the layer region ( When a layer is formed on the M cylinder substrate using Pj[child content I in I) as a parameter. Table 9 shows common manufacturing conditions for layer region (I) at this time. Furthermore, for each sample, the layer area (deer) is determined under the nine manufacturing conditions shown in Table 2, and the layer area (deer) is determined under the nine manufacturing conditions shown in Table 3.
C) was laminated.

The electrophotographic forming member thus obtained was evaluated in exactly the same manner as in Example 1, and the results shown in Table 10 were obtained.

(Table 9, Table 10)) Evaluation Criteria Person Excellent B Good C Practically Usable D Example 5 Practically Usable Example 5 The layer area ( I) and layer region (II) are sequentially laminated on the M substrate, and then the layer region (C) is laminated using the content of C atoms in the layer region (C) and the layer thickness of the layer region (C) as parameters.
) Laminated nine. The layer region (C) was formed under the same manufacturing conditions as in Table 3 except that the layer thickness was changed.

When the electrophotographic image forming member thus obtained was evaluated in exactly the same manner as in Example 1, the results shown in Table 12 were obtained.

@ Table 11 Table 12 Evaluation Criteria A Excellent B Good C Practically Usable D Practically Usable Example 6 Under the manufacturing conditions shown in Table 11, a layer region (
After forming I), the layer area (
fi) was laminated, and further layer region (C) was laminated under the manufacturing conditions shown in Table 3.

In addition, in forming the layer region (n), the layer thickness was changed and the other conditions were the same as those in No. 212.

The electrophotographic image forming member thus obtained was evaluated in exactly the same manner as in Example 1, and it was found that
The results shown in the table were obtained.

Table 13 Evaluation Criteria: Mu Excellent Bjl Good C Practically Usable D Practically Usable Example 7 The method of forming layer region (1) and layer region (n) was
Layers were formed and evaluated in the same manner as in Example 1, except for the changes shown in Tables 1 and 15, and the results shown in Table 16 were obtained.

Table 14 Table 15 Table 16 4 Evaluation Criteria 2 A Excellent B Good C Practically Usable D Practically Usable Figure 1 shows one of the preferred embodiments of the photoconductive member of the present invention. FIG. 2 is a schematic diagram illustrating an apparatus for manufacturing the photoconductive member of the present invention.

ioo...Photoconductive member 101...Support 10
2...Amorphous layer 103...@l layer region 1
04... Second layer region 105... Layer region (I)
106...Layer area (n) 107...Free surface ratio Canon Corporation

Claims (1)

[Scope of Claims] (1) A support for a photoconductive member, and a non-containing material provided on the support that has a silicon atom as a matrix and at least one of a hydrogen atom or a hydrogen atom as a constituent element. A tenth layer region made of a crystalline material and exhibiting photoconductivity and a second layer region made of an amorphous material whose constituent elements are silicon atoms and carbon atoms are laminated in this type. A photoconductive member 〇( 2) The photoconductive member according to claim 1, wherein the impurity is an atom belonging to Group V of the periodic table. (8) A photoconductive member in which the impurity is an atom belonging to group V of the periodic table and is located in the first term of the W#'F constraint. (41st layer - 1llf of impurity contained in castle (1) is 1.0 to 3 X 10'atomic ppm)
The photoconductive member described in Paragraph 1 of Patent No. 5hostS which is Pnt (6) The layer region (1) has a layer thickness of 0.01 to 10 μm. Member〇(η
Patent where the layer thickness in the 20th layer region is 0.01 to 10μ
Photoconductive member 0 as specified in item 1 of the required range