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JPS58114043U - Low pressure control device for vacuum equipment for semiconductor manufacturing - Google Patents

Low pressure control device for vacuum equipment for semiconductor manufacturing

Info

Publication number
JPS58114043U
JPS58114043U JP1075782U JP1075782U JPS58114043U JP S58114043 U JPS58114043 U JP S58114043U JP 1075782 U JP1075782 U JP 1075782U JP 1075782 U JP1075782 U JP 1075782U JP S58114043 U JPS58114043 U JP S58114043U
Authority
JP
Japan
Prior art keywords
signal
reaction chamber
pressure
opening
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1075782U
Other languages
Japanese (ja)
Inventor
治 松本
佐久間 悦夫
Original Assignee
株式会社日立国際電気
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to JP1075782U priority Critical patent/JPS58114043U/en
Publication of JPS58114043U publication Critical patent/JPS58114043U/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の構成説明図、第2図は本考
案における可変コンダクタンスバルブの一例を示す説明
図、第32図は本考案における信号処理装置の回路構成
の一例を示す接続図、第4図は本考案装置における可変
コンダクタンス比くルブの操作量比に対するコンダクタ
ンス比の関係を示す特性線図である。 1・・・・・・ガスボンベ、3・・・・・・ガス導入管
、4・・・・・・マスフローコントローラ、5・・・・
・・反応室、6・・・・・・真空計、7・・・・・・可
変コンダクタンスバルブ、8・・・・・・排気管、10
・・・・・・排気装置、11・・・・・・モータ、12
・・・・・・開度検出廟ポテンショメータ、13・・・
・・・設定器、14・・・・・・信号処理装置、15゛
・・・・・・モータ駆動信号増幅器、17・・・・・・
反応室内圧力信号、18・・・・・・開度信号、19・
・・・・・設定信号、20・・・・・・モータ駆動信号
、21・・・・・・ピニオン、22・・・・・・ラック
、23・・・・・慎空ベローズ、24・・・・・・駆動
軸、25・・・・・・可動板、26・・・・・・真空配
管用本体、26a・・・・・・バルブ開口、27. 3
0・・・・・・差信号増幅器、28・・・・・・演算増
幅器、29・・・・・・開度操作信号、31・・・・・
・差信号増幅器30の増幅出力信号。
Fig. 1 is an explanatory diagram of the configuration of an embodiment of the present invention, Fig. 2 is an explanatory diagram showing an example of the variable conductance valve of the present invention, and Fig. 32 is a connection diagram showing an example of the circuit configuration of the signal processing device of the present invention. 4 are characteristic diagrams showing the relationship between the variable conductance ratio and the operation amount ratio of the lube in the device of the present invention. 1... Gas cylinder, 3... Gas introduction pipe, 4... Mass flow controller, 5...
...Reaction chamber, 6...Vacuum gauge, 7...Variable conductance valve, 8...Exhaust pipe, 10
...Exhaust device, 11...Motor, 12
...Opening detection potentiometer, 13...
... Setting device, 14 ... Signal processing device, 15゛ ... Motor drive signal amplifier, 17 ...
Reaction chamber pressure signal, 18...Opening degree signal, 19.
... Setting signal, 20 ... Motor drive signal, 21 ... Pinion, 22 ... Rack, 23 ... Shinku bellows, 24 ... ... Drive shaft, 25 ... Movable plate, 26 ... Vacuum piping main body, 26a ... Valve opening, 27. 3
0...Difference signal amplifier, 28...Operation amplifier, 29...Opening degree operation signal, 31...
- Amplified output signal of the difference signal amplifier 30.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応室内に反応ガスを導入し排気しながら、反応室内の
圧力を低圧力に制御し、反応室内で半導体表面に薄膜を
成長させたり、半導体表面をエツチングしたりする半導
体製造用真空装置の低圧力制御装置において、排気系に
介挿され、開度を変化させるための可動板に固定した駆
動軸を真空ベローズを通して該真空ベローズ端部に固着
し、真空ベローズを変化させることにより駆動軸を介し
゛  て可動板を、バルブ開口部が°四角管形状を有す
る真空配管用本体内を移動させ茗ことによってコンダク
タンスが変化する可変コンダクタンスバルブと、反応室
内の圧力を検出するための圧力検出器と、設定信号を得
るための設定器と、前記バルブの開口動作に連動する開
度検出用ポテンショメータと、前記圧力検串器より得ら
れる反応室内圧力信号と、前記設定器より得られる設定
信号との差信号を演算処理して得られる開度操作信号と
、前記ポテンショメータより得られる開度信号との差信
号をモータ駆動信号として出力する信号処理装置と、こ
め信号処理装置により出力されるモータ駆動信号により
駆動され、バルブ開度を変化させるための駆動源とより
なる半導体製造用真空装置の低圧力制御装置。
Low-pressure vacuum equipment for semiconductor manufacturing that controls the pressure inside the reaction chamber to a low level while introducing and evacuating the reaction gas into the reaction chamber, growing a thin film on the semiconductor surface or etching the semiconductor surface within the reaction chamber. In the control device, a drive shaft fixed to a movable plate inserted in the exhaust system and used to change the opening degree is fixed to the end of the vacuum bellows through a vacuum bellows, and by changing the vacuum bellows, the drive shaft is fixed to a movable plate for changing the opening degree. A variable conductance valve whose conductance changes by moving a movable plate inside a vacuum piping main body whose valve opening has a rectangular tube shape, a pressure detector for detecting the pressure inside the reaction chamber, and settings. a setting device for obtaining a signal, a potentiometer for detecting the opening degree linked to the opening operation of the valve, and a difference signal between the reaction chamber pressure signal obtained from the pressure detector and the setting signal obtained from the setting device. a signal processing device that outputs a difference signal between an opening operation signal obtained by processing the opening amount and an opening signal obtained from the potentiometer as a motor drive signal, and a motor drive signal outputted by the signal processing device. A low pressure control device for vacuum equipment for semiconductor manufacturing, consisting of a drive source for changing the valve opening degree.
JP1075782U 1982-01-27 1982-01-27 Low pressure control device for vacuum equipment for semiconductor manufacturing Pending JPS58114043U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1075782U JPS58114043U (en) 1982-01-27 1982-01-27 Low pressure control device for vacuum equipment for semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1075782U JPS58114043U (en) 1982-01-27 1982-01-27 Low pressure control device for vacuum equipment for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
JPS58114043U true JPS58114043U (en) 1983-08-04

Family

ID=30023388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1075782U Pending JPS58114043U (en) 1982-01-27 1982-01-27 Low pressure control device for vacuum equipment for semiconductor manufacturing

Country Status (1)

Country Link
JP (1) JPS58114043U (en)

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