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JPS58100174A - Liquid crystal display - Google Patents

Liquid crystal display

Info

Publication number
JPS58100174A
JPS58100174A JP56198855A JP19885581A JPS58100174A JP S58100174 A JPS58100174 A JP S58100174A JP 56198855 A JP56198855 A JP 56198855A JP 19885581 A JP19885581 A JP 19885581A JP S58100174 A JPS58100174 A JP S58100174A
Authority
JP
Japan
Prior art keywords
liquid crystal
substrate
display device
etching
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56198855A
Other languages
Japanese (ja)
Other versions
JPS6222154B2 (en
Inventor
小松原 吉明
宗方 英子
井出 恭三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56198855A priority Critical patent/JPS58100174A/en
Publication of JPS58100174A publication Critical patent/JPS58100174A/en
Publication of JPS6222154B2 publication Critical patent/JPS6222154B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は反射型の液晶表示装置に係り、特に反射面とな
る表示電極部の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a reflective liquid crystal display device, and particularly to improvement of a display electrode portion serving as a reflective surface.

〔発明の技術的背景〕[Technical background of the invention]

近年、表示装置の進歩は目ざましいものがあるが、中で
も液晶を用いた表示装置は低電力、薄型、長寿命という
点ですぐれておシ、最近では液晶を用いたテレビも発表
されている。現在。
In recent years, there have been remarkable advances in display devices, but display devices using liquid crystals are particularly superior in terms of low power consumption, thinness, and long life.Recently, televisions using liquid crystals have also been announced. the current.

液晶テレビには、消費電力が小さい、視角が広く取れる
等の理由からネマチ、り液晶に二色性色素を混合した液
晶を用いた、いわゆるダスト・ホスト製の液晶が用いら
れている。このゲスト−ホスト型液晶において、高いコ
ントラストを得るためには下地の表示電極を白く、明る
い散乱反射面にすることが必要である。このような反射
面となる表示電極を実−現するため、従来はアルミニウ
ムのような白色金属の表面を化学的な処理を施し、表面
に微細な凹凸を作る方法、又は、同様な処理による微細
な凹凸を絶縁膜を介してその上の表示電極に反映させる
方法が行なわれていた。
Liquid crystal televisions use so-called dust-host liquid crystals, which are made by mixing dichroic dyes with nematic liquid crystals, for reasons such as low power consumption and wide viewing angles. In this guest-host type liquid crystal, in order to obtain high contrast, it is necessary to make the underlying display electrode a white, bright scattering-reflecting surface. In order to realize display electrodes that serve as reflective surfaces, conventional methods have been to chemically treat the surface of a white metal such as aluminum to create fine irregularities on the surface, or to create fine irregularities using a similar process. A method has been used in which the irregularities are reflected on the display electrodes thereon via an insulating film.

〔背景技術の問題点〕[Problems with background technology]

しかし、従来の方法では、表示直積が大きい場合にあっ
ては、化学的な処理を行う際、基板内で不均一が生ずる
ばかシでなく、ロケ1間においてもバラツキが出る等の
欠点を有している。
However, with conventional methods, when the displayed direct product is large, there are drawbacks such as not only non-uniformity occurring within the substrate but also variation between locations when chemical processing is performed. are doing.

〔発明の目的〕[Purpose of the invention]

本発明は、極めて均一性の優れた明るい散乱面とした表
示電極を備えた反射型の液晶表示装置を提供することを
目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a reflective liquid crystal display device having a display electrode having a bright scattering surface with extremely excellent uniformity.

〔発明の概要〕[Summary of the invention]

本発明は、液晶セルの表示電極を散乱面とするために、
シリコンを含むアルミニウム膜を工、チングしたときに
均一性よく、かつ再現性よく残すことのできるシリコン
残渣を凹凸を作るための核として用い、この凹凸を反映
するように絶縁膜を介して表示電極を設けたととを特徴
とする。
In the present invention, in order to make the display electrode of a liquid crystal cell a scattering surface,
Silicon residue, which can be left with good uniformity and good reproducibility when processing and etching an aluminum film containing silicon, is used as a core to create unevenness, and the display electrode is formed through an insulating film to reflect this unevenness. It is characterized by having and.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図面を参照して詳細に説明す
る。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

菖1図は本発明をスイ、チ/キャノ臂シタアレイを用い
たマトリクス形液晶表示装置に適用した一実施例を説明
するための一画素部分の断面図、第2図はその一画素部
分の等価回路、第3図は同じくその表示電極部分の拡大
図である。
Figure 1 is a cross-sectional view of one pixel portion for explaining an embodiment in which the present invention is applied to a matrix type liquid crystal display device using a switch/chip/canopy array, and Figure 2 is an equivalent view of the one pixel portion. Similarly, FIG. 3 is an enlarged view of the display electrode portion of the circuit.

1は単結晶シリコン基板(第1の基板)であシ、この上
にシリコンゲートMO8製造グロセスによってMOSF
ET :lとMO8キヤ/譬シタ3からなるスイ、チ/
キャ/4シタアレイが集積形成されている。4はCVD
等によシ被着された絶縁膜で、所定の場所が開孔されて
いて、この上にシリコンを含むアルミニウム膜をス/4
.夕によシ被着し、これを工、チンダして配IIJが形
成されている。
1 is a single crystal silicon substrate (first substrate), on which a MOSF is formed by a silicon gate MO8 manufacturing process.
ET: Sui, chi, consisting of l and MO8 kiya/Manshita 3/
A C/4 capacitor array is integrated. 4 is CVD
This is an insulating film deposited by a method such as a silicone insulating film, with holes made at predetermined locations, and an aluminum film containing silicon is then deposited on top of the insulating film.
.. The layer IIJ is formed by applying the layer to the surface, and then machining and cindering it.

この/々ターンをエツチングに依〕形成する際、シリコ
ン残渣6が絶縁膜40表面に残る。こうして、スイ、チ
/キャ・母シタアレイおよびその配線が形成された基板
上に、更にCVD等によシ絶緻膜1を被着し、これに開
孔をあけて反射率の高い金属例えばアルミニウム膜を被
着し、このアルミニウム膜をノ譬ターニングして表示電
極8が形成されている。このとき絶縁膜1は、上述のシ
リコン残渣6が核となって生長するため、第3図に示す
ごとく、残渣6に対応した凹凸が表面に反映され、この
凹凸面が表示電極80表面にも反映されて、表示電極8
は良好な散乱面となる。ヒリして得られた表示電極をも
クスイ、チ/キャ/4シタアレイが形成された基板と、
全面に透明電極・9・が形成されたガラス基板10(第
2の基板)との間にゲスト・ホスト屋液晶11を挾持し
て、マトリ、ジス形液晶表示装置が構成されている。
When forming this/half turn by etching, silicon residue 6 remains on the surface of the insulating film 40. In this way, on the substrate on which the switch, chip, cap, and motherboard arrays and their wiring have been formed, an insulating film 1 is further deposited by CVD or the like, and holes are made in this to form a metal with a high reflectivity, such as aluminum. A display electrode 8 is formed by depositing a film and turning this aluminum film. At this time, the insulating film 1 grows with the silicon residue 6 as a nucleus, so as shown in FIG. reflected, display electrode 8
is a good scattering surface. A substrate on which a chi/ca/4-shita array is formed;
A matrix-type liquid crystal display device is constructed by sandwiching a guest-host liquid crystal 11 between a glass substrate 10 (second substrate) on which transparent electrodes 9 are formed.

この実施例によれば、表示電極8は、面積が比較的大き
い場合にも極めて均一な明るい白色散乱面となシ、;ン
トラストの喪い表示が可能となる。しかも表示電極IO
散乱面の均一性は再現性よく実現でき、ロケ1間でのば
らつきも少ない。
According to this embodiment, even when the display electrode 8 has a relatively large area, it becomes an extremely uniform, bright white scattering surface, which enables contrastless display. Moreover, the display electrode IO
The uniformity of the scattering surface can be achieved with good reproducibility, and there is little variation between locations.

尚、実施例において、絶縁膜はCVDによシ被着したも
の、反射型の表示電極はアルミニウムを例として用いた
がこれに限るものではなく目的を満足する材料であれば
良い。又スイ、チ/アモルファスシリコンやポリシリコ
ンを形成したような構造のものであっても良い。更に実
施例テはスイ、チ/キャ/母シタアレイを用いたマトリ
クス形液晶表示装置を示したが、本発明は反射量の表示
電極を用いる他の液晶表示装置に同様に適用して効果が
ある。
In the embodiment, the insulating film was deposited by CVD, and the reflective display electrode was made of aluminum, but the present invention is not limited to these, and any material may be used as long as it satisfies the purpose. Alternatively, it may have a structure made of amorphous silicon or polysilicon. Furthermore, although Example TE shows a matrix type liquid crystal display device using a sui, chi/ca/mother array, the present invention can be similarly applied to other liquid crystal display devices using reflective display electrodes. .

〔発明の効果〕 本発明によれば、表示電極面を均一性よく、かつ再現性
よく白色散乱面とした。コントラストの高い反射量の液
晶表示装置を提供できる。
[Effects of the Invention] According to the present invention, the display electrode surface is made into a white scattering surface with good uniformity and good reproducibility. A liquid crystal display device with high contrast and reflection can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の詳細な説明するための断面図、第2
図は、その等価回路図、第3図は、同じくその表示電極
部分の拡大図である。 1・・・単結晶シリコン基板(鮪1の基板)、2・・・
MOSFET、  :1・−MOSキャ/4シタ、4・
・・絶縁膜、5・・・配線(シリコンを含むアル之ニウ
ム膜)、6・・・シリコン残渣、1・・・絶縁膜、8・
・・表示電極、9・・・透明電極、10・・・ガラス基
板(譲2の基板×11・・・ゲスト・ホスト型液晶。
FIG. 1 is a sectional view for explaining the present invention in detail, and FIG.
The figure is an equivalent circuit diagram, and FIG. 3 is an enlarged view of the display electrode portion. 1... Single crystal silicon substrate (Tuna 1 substrate), 2...
MOSFET, :1・-MOS capacitor/4 position, 4・
... Insulating film, 5... Wiring (aluminum film containing silicon), 6... Silicon residue, 1... Insulating film, 8...
...Display electrode, 9...Transparent electrode, 10...Glass substrate (Substrate 2 x 11...Guest-host type liquid crystal.

Claims (3)

【特許請求の範囲】[Claims] (1)所定/譬ターンの反射盤の表示電極が形成された
第10基板と全面に透明電極が形成された透明材料から
なる第2の基板との関に液晶を挾持して構成される液晶
表示装置において、前記表示電極は、IIlの基板上に
被着されたシリコンを含むアルミニウム膜を工、チング
したときに残るシリコン残渣による凹凸を反映するよう
に被着された絶縁膜上に配設されていることを特徴とす
る液晶表示装置。
(1) A liquid crystal that is constructed by sandwiching a liquid crystal between a tenth substrate on which a display electrode of a reflector of a predetermined turn is formed and a second substrate made of a transparent material on which a transparent electrode is formed on the entire surface. In the display device, the display electrode is disposed on an insulating film deposited so as to reflect unevenness caused by silicon residue remaining when etching and etching an aluminum film containing silicon deposited on the substrate of IIl. A liquid crystal display device characterized by:
(2)  第1の基板にはスイ、チ/キャI臂シタアレ
イが集積形成され、プレイの配線がシリコンを含むアル
ミニウム膜をエツチングによジノ9ターン形成したもの
であって、前記シリコン残渣はこの配線のツヤター/形
成のときに残されたものである、特許請求の範囲第1項
記載の液−表示装置。
(2) On the first substrate, a switch/chi/ca I armpit array is integrated, and the play wiring is formed by etching an aluminum film containing silicon into nine turns, and the silicon residue is The liquid-display device according to claim 1, which is left behind when wiring is glossed/formed.
(3)  液晶はネマチ、り液晶に二色性色素を混合し
てなるゲスト・ホスト型液晶である特許請求の範囲第1
項記載の液晶表示装置。
(3) The liquid crystal is a guest-host type liquid crystal made by mixing a dichroic dye with a nematic liquid crystal. Claim 1
The liquid crystal display device described in Section 1.
JP56198855A 1981-12-10 1981-12-10 Liquid crystal display Granted JPS58100174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56198855A JPS58100174A (en) 1981-12-10 1981-12-10 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198855A JPS58100174A (en) 1981-12-10 1981-12-10 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPS58100174A true JPS58100174A (en) 1983-06-14
JPS6222154B2 JPS6222154B2 (en) 1987-05-15

Family

ID=16398023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198855A Granted JPS58100174A (en) 1981-12-10 1981-12-10 Liquid crystal display

Country Status (1)

Country Link
JP (1) JPS58100174A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62240935A (en) * 1986-04-14 1987-10-21 Seiko Epson Corp Space optical modulator
JPH0627481A (en) * 1992-07-10 1994-02-04 Sharp Corp Reflective active matrix substrate, its production and liquid crystal display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0256746U (en) * 1988-10-19 1990-04-24

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694386A (en) * 1979-12-27 1981-07-30 Suwa Seikosha Kk Liquiddcrystal display unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694386A (en) * 1979-12-27 1981-07-30 Suwa Seikosha Kk Liquiddcrystal display unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62240935A (en) * 1986-04-14 1987-10-21 Seiko Epson Corp Space optical modulator
JPH0627481A (en) * 1992-07-10 1994-02-04 Sharp Corp Reflective active matrix substrate, its production and liquid crystal display device

Also Published As

Publication number Publication date
JPS6222154B2 (en) 1987-05-15

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