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JPS5793593A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5793593A
JPS5793593A JP17038680A JP17038680A JPS5793593A JP S5793593 A JPS5793593 A JP S5793593A JP 17038680 A JP17038680 A JP 17038680A JP 17038680 A JP17038680 A JP 17038680A JP S5793593 A JPS5793593 A JP S5793593A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
manufacture
clad layer
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17038680A
Other languages
Japanese (ja)
Inventor
Katsuji Seki
Nobuyuki Takagi
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17038680A priority Critical patent/JPS5793593A/en
Publication of JPS5793593A publication Critical patent/JPS5793593A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the yield of manufacturing a semiconductor laser by forming in advance a thin film not hydrophilic with molded material at the stripe at the end of the projection of a clad layer bonded directly with a substrate and growing a current stopping layer and an etch-back preventing layer. CONSTITUTION:A thin film 11 not hydrophilic with a molten material is formed in advance at the stripe at the end of the projection of a clad layer 2 bonded directly with a substrate 1, and a current stopping layer 8 and an etch-back preventive layer 9 are grown. Then, the film 11 is removed, and the clad layer 2 is grown. Thus, the yield of the manufacture can be improved, thereby obtaining stabilized quality of a semiconductor laser.
JP17038680A 1980-12-03 1980-12-03 Manufacture of semiconductor laser Pending JPS5793593A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17038680A JPS5793593A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17038680A JPS5793593A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5793593A true JPS5793593A (en) 1982-06-10

Family

ID=15903964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17038680A Pending JPS5793593A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5793593A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124051A2 (en) * 1983-04-27 1984-11-07 Kabushiki Kaisha Toshiba Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124051A2 (en) * 1983-04-27 1984-11-07 Kabushiki Kaisha Toshiba Semiconductor laser
US4639925A (en) * 1983-04-27 1987-01-27 Kabushiki Kaisha Toshiba Semiconductor laser

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