JPS577923A - Manufacture of receiving table for processing single silicon crystal wafer - Google Patents
Manufacture of receiving table for processing single silicon crystal waferInfo
- Publication number
- JPS577923A JPS577923A JP8242780A JP8242780A JPS577923A JP S577923 A JPS577923 A JP S577923A JP 8242780 A JP8242780 A JP 8242780A JP 8242780 A JP8242780 A JP 8242780A JP S577923 A JPS577923 A JP S577923A
- Authority
- JP
- Japan
- Prior art keywords
- receiving table
- processing
- wafers
- manufacture
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 7
- 235000012431 wafers Nutrition 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 229910002804 graphite Inorganic materials 0.000 abstract 4
- 239000010439 graphite Substances 0.000 abstract 4
- 239000007792 gaseous phase Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To enhance a manufacturing yield rate of receiving table for processing wafers by depositing semiconductor materials on a graphite base material in a shape of the receiving table for processing wafers to be formed in a gaseous phase, cutting a film to form slits and burning the graphite. CONSTITUTION:The semiconductor material (SiC, Si, or Si3N4) is grown in gaseous phase on the surface of the graphite base material in the shape of the receiving table for processing the wafers to form the film. The slits 1 suitable for inserting semiconductor wafers are formed by a grinding tool. Thereafter, the graphite base material is burned in oxygen atmosphere at 500 deg.C, and the wafer processing receiving table 2 comprising only semiconductor material is formed. In this method, the wafer processing receiving table comprising only the semiconductor material can be highly efficiently manufactured with the high yield rate at an inexpensive cost.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242780A JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242780A JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577923A true JPS577923A (en) | 1982-01-16 |
| JPS6243333B2 JPS6243333B2 (en) | 1987-09-12 |
Family
ID=13774278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8242780A Granted JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577923A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194904A (en) * | 1986-02-20 | 1987-08-27 | Bridgestone Corp | Heavy duty pneumatic radial tire |
| JPS62283002A (en) * | 1986-02-20 | 1987-12-08 | Bridgestone Corp | Pneumatic radial tire for heavy load |
| JPH0590184A (en) * | 1991-09-27 | 1993-04-09 | Mitsui Eng & Shipbuild Co Ltd | Manufacture of wafer boat for semiconductor diffusing furnace |
| US5443649A (en) * | 1994-11-22 | 1995-08-22 | Sibley; Thomas | Silicon carbide carrier for wafer processing in vertical furnaces |
| US5776391A (en) * | 1994-08-08 | 1998-07-07 | Sibley; Thomas | Silicon carbide carrier for wafer processing and method for making same |
| WO2020174725A1 (en) * | 2019-02-28 | 2020-09-03 | 株式会社アドマップ | SiC FILM STRUCTURE |
| KR20230159467A (en) | 2021-03-23 | 2023-11-21 | 도쿄엘렉트론가부시키가이샤 | Semiconductor manufacturing equipment and parts for semiconductor manufacturing equipment |
-
1980
- 1980-06-18 JP JP8242780A patent/JPS577923A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194904A (en) * | 1986-02-20 | 1987-08-27 | Bridgestone Corp | Heavy duty pneumatic radial tire |
| JPS62283002A (en) * | 1986-02-20 | 1987-12-08 | Bridgestone Corp | Pneumatic radial tire for heavy load |
| JPH0590184A (en) * | 1991-09-27 | 1993-04-09 | Mitsui Eng & Shipbuild Co Ltd | Manufacture of wafer boat for semiconductor diffusing furnace |
| US5776391A (en) * | 1994-08-08 | 1998-07-07 | Sibley; Thomas | Silicon carbide carrier for wafer processing and method for making same |
| US5443649A (en) * | 1994-11-22 | 1995-08-22 | Sibley; Thomas | Silicon carbide carrier for wafer processing in vertical furnaces |
| WO2020174725A1 (en) * | 2019-02-28 | 2020-09-03 | 株式会社アドマップ | SiC FILM STRUCTURE |
| US10804096B2 (en) | 2019-02-28 | 2020-10-13 | Admap Inc. | SiC film structure and method for manufacturing SiC film structure |
| US11508570B2 (en) | 2019-02-28 | 2022-11-22 | Admap Inc. | SiC film structure |
| KR20230159467A (en) | 2021-03-23 | 2023-11-21 | 도쿄엘렉트론가부시키가이샤 | Semiconductor manufacturing equipment and parts for semiconductor manufacturing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6243333B2 (en) | 1987-09-12 |
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