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JPS5768014A - Manufacture of semiconductor single crystal film - Google Patents

Manufacture of semiconductor single crystal film

Info

Publication number
JPS5768014A
JPS5768014A JP14362380A JP14362380A JPS5768014A JP S5768014 A JPS5768014 A JP S5768014A JP 14362380 A JP14362380 A JP 14362380A JP 14362380 A JP14362380 A JP 14362380A JP S5768014 A JPS5768014 A JP S5768014A
Authority
JP
Japan
Prior art keywords
film
substrate
single crystal
alter
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14362380A
Other languages
Japanese (ja)
Inventor
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14362380A priority Critical patent/JPS5768014A/en
Publication of JPS5768014A publication Critical patent/JPS5768014A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a semiconductor film having less lattice defect density by injecting ions to the semiconductor film covered on an insulating single crystal substrate to remain the surface side of the film as the single crystal and to alter only the bottom to amorphous film, then emitting an energy beam of the degree so as not to melt the film, and epitaxially growing in solid phase the amorphous film from the surface side to the substrate side. CONSTITUTION:An Si single crystal film 2 is accumulated by a CVD method on an insulating single crystal substrate 1, e.g., sapphire or the like, ions are injected to the film 2 to alter the part contacting the substrate 1 on the bottom of the film 2 temporarily to amorphous film 3. At this time the substrate 1 is maintained at approx. 0 deg.C with Freon gas so as not to raise the temperature of the substrate 1. Thereafter, the film 2 retained from the surface side of the substrate 1 is emitted with Ar laser of the degree so as not to melt the film 2. The film 3 is epitaxially grown in solid phase from the film 2 to the surface of the substrate 1 to alter the film 3 to a single crystal film 4. In this manner, a semiconductor film having less crystal defect can be obtained on the substrate.
JP14362380A 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film Pending JPS5768014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14362380A JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14362380A JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Publications (1)

Publication Number Publication Date
JPS5768014A true JPS5768014A (en) 1982-04-26

Family

ID=15343051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14362380A Pending JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Country Status (1)

Country Link
JP (1) JPS5768014A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
US7183229B2 (en) 2000-12-08 2007-02-27 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

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