JPS5767018A - Formation of film - Google Patents
Formation of filmInfo
- Publication number
- JPS5767018A JPS5767018A JP14039580A JP14039580A JPS5767018A JP S5767018 A JPS5767018 A JP S5767018A JP 14039580 A JP14039580 A JP 14039580A JP 14039580 A JP14039580 A JP 14039580A JP S5767018 A JPS5767018 A JP S5767018A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- films
- quartz glass
- rod
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Treatment Of Glass (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form uniform thin silicon films of high quality and large area in a simple process by dipping a quartz glass plate in a silicon melt and pulling up it slowly.
CONSTITUTION: A quartz glass plate 2 attached to the tip of a seed rod 1 is dipped in a silicon melt 3 in a quartz glass crucible 4 provided with a carbon heater 5 and a high frequency coil 6 until the joint between the plate 2 and the rod 1 reaches the melt 3. The plate 2 is the pulled up at about 10W50mm/hr rate while rotating the rod 1. Thus, thin silicon films are formed on both sides of the plate 2. Said operation is conducted in an atmosphere of an inert gas such as nitrogen or Ar. When the temp. of the silicon melt is about 1,500°C and the pulling rate is about 10mm/hr, single crystal films are obtd. When the temp. is about 1,450°C and the pulling rate is about 50mm/hr, polycrystalline films are obtd.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14039580A JPS5767018A (en) | 1980-10-09 | 1980-10-09 | Formation of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14039580A JPS5767018A (en) | 1980-10-09 | 1980-10-09 | Formation of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5767018A true JPS5767018A (en) | 1982-04-23 |
Family
ID=15267792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14039580A Pending JPS5767018A (en) | 1980-10-09 | 1980-10-09 | Formation of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5767018A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007204353A (en) * | 2006-02-06 | 2007-08-16 | Univ Of Tsukuba | Silicon crystal precipitation method and silicon crystal material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5337184A (en) * | 1977-09-05 | 1978-04-06 | Toshiba Corp | Epitaxially growing method in liquid phase |
| JPS54134083A (en) * | 1978-04-11 | 1979-10-18 | Agency Of Ind Science & Technol | Belt type silicon crystallizer |
-
1980
- 1980-10-09 JP JP14039580A patent/JPS5767018A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5337184A (en) * | 1977-09-05 | 1978-04-06 | Toshiba Corp | Epitaxially growing method in liquid phase |
| JPS54134083A (en) * | 1978-04-11 | 1979-10-18 | Agency Of Ind Science & Technol | Belt type silicon crystallizer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007204353A (en) * | 2006-02-06 | 2007-08-16 | Univ Of Tsukuba | Silicon crystal precipitation method and silicon crystal material |
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