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JPS576310A - Method and apparatus for measuring film thickness - Google Patents

Method and apparatus for measuring film thickness

Info

Publication number
JPS576310A
JPS576310A JP8060180A JP8060180A JPS576310A JP S576310 A JPS576310 A JP S576310A JP 8060180 A JP8060180 A JP 8060180A JP 8060180 A JP8060180 A JP 8060180A JP S576310 A JPS576310 A JP S576310A
Authority
JP
Japan
Prior art keywords
film thickness
thin film
measure
test piece
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8060180A
Other languages
Japanese (ja)
Inventor
Shigemi Furubiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8060180A priority Critical patent/JPS576310A/en
Publication of JPS576310A publication Critical patent/JPS576310A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE: To measure the film thickness nondestructive method, by irradiating electron rays on thin film test piece under vacuum and measuring the transmitted current.
CONSTITUTION: A thin film test piece 3 is located in a bell jar 2 which is evacuated with a vacuum pump 1, and electron rays are given to the surface of the sample 3 from an electronic gun driven with a control power supply 4. In this case, the transmitted current of the thin film sample 3 is detected by an ammeter 6 to measure the film thickness.
COPYRIGHT: (C)1982,JPO&Japio
JP8060180A 1980-06-13 1980-06-13 Method and apparatus for measuring film thickness Pending JPS576310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8060180A JPS576310A (en) 1980-06-13 1980-06-13 Method and apparatus for measuring film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8060180A JPS576310A (en) 1980-06-13 1980-06-13 Method and apparatus for measuring film thickness

Publications (1)

Publication Number Publication Date
JPS576310A true JPS576310A (en) 1982-01-13

Family

ID=13722843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8060180A Pending JPS576310A (en) 1980-06-13 1980-06-13 Method and apparatus for measuring film thickness

Country Status (1)

Country Link
JP (1) JPS576310A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10242962A1 (en) * 2002-09-17 2004-04-01 Gesellschaft für Schwerionenforschung mbH Device and method for local layer thickness measurement on a sample and / or for changing its thickness locally with an electron beam
US6809534B2 (en) 2000-05-30 2004-10-26 Fab Solutions, Inc. Semiconductor device test method and semiconductor device tester
US6842663B2 (en) 2001-03-01 2005-01-11 Fab Solutions, Inc. Production managing system of semiconductor device
US6850079B2 (en) 2002-01-17 2005-02-01 Fab Solutions, Inc. Film thickness measuring apparatus and a method for measuring a thickness of a film
US6897440B1 (en) 1998-11-30 2005-05-24 Fab Solutions, Inc. Contact hole standard test device
US6943043B2 (en) 2001-03-02 2005-09-13 Fab Solutions, Inc. Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device
US6946857B2 (en) 1999-11-05 2005-09-20 Fab Solutions, Inc. Semiconductor device tester
JP2006119133A (en) * 1999-11-05 2006-05-11 Fab Solution Kk Semiconductor device tester

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7232994B2 (en) 1998-11-30 2007-06-19 Fab Solutions, Inc. Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
US6982418B2 (en) 1998-11-30 2006-01-03 Fab Solutions, Inc. Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
US6897440B1 (en) 1998-11-30 2005-05-24 Fab Solutions, Inc. Contact hole standard test device
US6967327B2 (en) 1998-11-30 2005-11-22 Fab Solutions, Inc. Contact hole standard test device, method of forming the same, method testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
US6940296B2 (en) 1998-11-30 2005-09-06 Fab Solutions, Inc. Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
US6946857B2 (en) 1999-11-05 2005-09-20 Fab Solutions, Inc. Semiconductor device tester
US7385195B2 (en) 1999-11-05 2008-06-10 Topcon Corporation Semiconductor device tester
JP2006119133A (en) * 1999-11-05 2006-05-11 Fab Solution Kk Semiconductor device tester
US6975125B2 (en) 1999-11-05 2005-12-13 Fab Solutions, Inc. Semiconductor device tester
US6900645B2 (en) 2000-05-30 2005-05-31 Fab Solutions, Inc. Semiconductor device test method and semiconductor device tester
US7420379B2 (en) 2000-05-30 2008-09-02 Topcon Corporation Semiconductor device test method and semiconductor device tester
US6914444B2 (en) 2000-05-30 2005-07-05 Fab Solutions, Inc. Semiconductor device test method and semiconductor device tester
US7049834B2 (en) 2000-05-30 2006-05-23 Fab Solutions, Inc Semiconductor device test method and semiconductor device tester
US6809534B2 (en) 2000-05-30 2004-10-26 Fab Solutions, Inc. Semiconductor device test method and semiconductor device tester
US7550982B2 (en) 2000-05-30 2009-06-23 Topcon Corporation Semiconductor device test method for comparing a first area with a second area
US6842663B2 (en) 2001-03-01 2005-01-11 Fab Solutions, Inc. Production managing system of semiconductor device
US7321805B2 (en) 2001-03-01 2008-01-22 Fab Solutions, Inc. Production managing system of semiconductor device
US7795593B2 (en) 2001-03-02 2010-09-14 Topcon Corporation Surface contamination analyzer for semiconductor wafers
US6943043B2 (en) 2001-03-02 2005-09-13 Fab Solutions, Inc. Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device
US7700380B2 (en) 2001-03-02 2010-04-20 Topcon Corporation Surface contamination analyzer for semiconductor wafers, method used therein and process for fabricating semiconductor device
US6850079B2 (en) 2002-01-17 2005-02-01 Fab Solutions, Inc. Film thickness measuring apparatus and a method for measuring a thickness of a film
US7002361B2 (en) 2002-01-17 2006-02-21 Fab Solutions, Inc. Film thickness measuring apparatus and a method for measuring a thickness of a film
DE10242962B4 (en) * 2002-09-17 2004-08-05 Gesellschaft für Schwerionenforschung mbH Device and method for local layer thickness measurement on a sample
DE10242962A1 (en) * 2002-09-17 2004-04-01 Gesellschaft für Schwerionenforschung mbH Device and method for local layer thickness measurement on a sample and / or for changing its thickness locally with an electron beam

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