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JPS5758362A - Mos transistor analog switch - Google Patents

Mos transistor analog switch

Info

Publication number
JPS5758362A
JPS5758362A JP55132933A JP13293380A JPS5758362A JP S5758362 A JPS5758362 A JP S5758362A JP 55132933 A JP55132933 A JP 55132933A JP 13293380 A JP13293380 A JP 13293380A JP S5758362 A JPS5758362 A JP S5758362A
Authority
JP
Japan
Prior art keywords
resistor
layer
take out
out point
well layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55132933A
Other languages
Japanese (ja)
Other versions
JPS6336145B2 (en
Inventor
Isao Akitake
Yasuo Kominami
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55132933A priority Critical patent/JPS5758362A/en
Publication of JPS5758362A publication Critical patent/JPS5758362A/en
Publication of JPS6336145B2 publication Critical patent/JPS6336145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To prevent destruction of an MOS transistor to be caused by application of a large amplitude input signal by a method wherein a resistor is inserted in the base output end of a parastic transistor or in a negative electric power source circuit, and the take out point of a collector region is separated far away from a P-WELL layer being the the base region. CONSTITUTION:The resistor 13 is connected to a back gate terminal 1d, and the negative voltage source 3 is connected to the back gate terminal 1d through this resistor. The take out point of an Ep layer 5 being the collector region of the parasitic NPN transistor TR9 is set at the position separated far away from the P-WELL layer 7 being the base region. The P-WELL layer is formed by making P type Si to diffuse in a grown epitaxial layer, and it becomes to the same result with insertion of a resistor 14 between the take out point of the layer 6 and the collector of the TR9. Accordingly even when the input signal of large amplitude level is applied to an emitter 1a, because the current to flow in the TR9 is limited by the resistors 13, 14, the MOSTR is not destroyed.
JP55132933A 1980-09-26 1980-09-26 Mos transistor analog switch Granted JPS5758362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55132933A JPS5758362A (en) 1980-09-26 1980-09-26 Mos transistor analog switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55132933A JPS5758362A (en) 1980-09-26 1980-09-26 Mos transistor analog switch

Publications (2)

Publication Number Publication Date
JPS5758362A true JPS5758362A (en) 1982-04-08
JPS6336145B2 JPS6336145B2 (en) 1988-07-19

Family

ID=15092887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55132933A Granted JPS5758362A (en) 1980-09-26 1980-09-26 Mos transistor analog switch

Country Status (1)

Country Link
JP (1) JPS5758362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03235517A (en) * 1990-02-13 1991-10-21 Seiko Instr Inc Switching circuit
JP2012054694A (en) * 2010-08-31 2012-03-15 On Semiconductor Trading Ltd Bidirectional switch and switch circuit using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03235517A (en) * 1990-02-13 1991-10-21 Seiko Instr Inc Switching circuit
JP2012054694A (en) * 2010-08-31 2012-03-15 On Semiconductor Trading Ltd Bidirectional switch and switch circuit using the same

Also Published As

Publication number Publication date
JPS6336145B2 (en) 1988-07-19

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