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JPS5756965A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5756965A
JPS5756965A JP55130603A JP13060380A JPS5756965A JP S5756965 A JPS5756965 A JP S5756965A JP 55130603 A JP55130603 A JP 55130603A JP 13060380 A JP13060380 A JP 13060380A JP S5756965 A JPS5756965 A JP S5756965A
Authority
JP
Japan
Prior art keywords
layer
mask layer
electrode
base region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130603A
Other languages
Japanese (ja)
Other versions
JPH0231495B2 (en
Inventor
Tsukasa Watanabe
Akihiko Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55130603A priority Critical patent/JPS5756965A/en
Publication of JPS5756965A publication Critical patent/JPS5756965A/en
Publication of JPH0231495B2 publication Critical patent/JPH0231495B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the noise of a semiconductor device by forming an insulator as a mask layer to form an active base region, selectively removing the insulator to sequentially form emitter region and electrode, thereby eliminating the displacement of the position of a high frequency transistor. CONSTITUTION:An inert base region 3 is formed on a substrate 1, the oxidized film 2 on the active base region is then removed, and a mask layer EB, EE made of an oxidized film 7 and a nitrided film 8 are formed. Then, ions are injected to form an active base layer 9, the mask layer EE is selectively removed with the resist mask, a doped polysilicon layer 10 is formed, and an emitter diffused layer 11 is formed. Then, the mask layer EB is selectively removed to form an electrode 12, a collector electrode 13 is formed on the back surface, to complete a transistor. In this manner, a high frequency element having small base width WB can be formed without displacement, and the base resistance can be reduced, thereby reducing the noise.
JP55130603A 1980-09-22 1980-09-22 Manufacture of semiconductor device Granted JPS5756965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130603A JPS5756965A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130603A JPS5756965A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5756965A true JPS5756965A (en) 1982-04-05
JPH0231495B2 JPH0231495B2 (en) 1990-07-13

Family

ID=15038155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130603A Granted JPS5756965A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108023U (en) * 1983-12-24 1985-07-23 株式会社アドバンテスト High precision voltage generator

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310790U (en) * 1989-06-19 1991-01-31

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010580A (en) * 1973-05-25 1975-02-03
JPS5010974A (en) * 1973-05-25 1975-02-04
JPS5167069A (en) * 1974-12-07 1976-06-10 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010580A (en) * 1973-05-25 1975-02-03
JPS5010974A (en) * 1973-05-25 1975-02-04
JPS5167069A (en) * 1974-12-07 1976-06-10 Fujitsu Ltd Handotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108023U (en) * 1983-12-24 1985-07-23 株式会社アドバンテスト High precision voltage generator

Also Published As

Publication number Publication date
JPH0231495B2 (en) 1990-07-13

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