JPS5755225B2 - - Google Patents
Info
- Publication number
- JPS5755225B2 JPS5755225B2 JP49059849A JP5984974A JPS5755225B2 JP S5755225 B2 JPS5755225 B2 JP S5755225B2 JP 49059849 A JP49059849 A JP 49059849A JP 5984974 A JP5984974 A JP 5984974A JP S5755225 B2 JPS5755225 B2 JP S5755225B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/154—Charge-injection device [CID] image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US364346A US3877057A (en) | 1973-05-29 | 1973-05-29 | Apparatus for sensing radiation and providing electrical read out |
| US364345A US3882531A (en) | 1973-05-29 | 1973-05-29 | Apparatus for sensing radiation and providing electrical read out |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5028991A JPS5028991A (en) | 1975-03-24 |
| JPS5755225B2 true JPS5755225B2 (en) | 1982-11-22 |
Family
ID=27002438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49059849A Expired JPS5755225B2 (en) | 1973-05-29 | 1974-05-29 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5755225B2 (en) |
| DE (1) | DE2425392A1 (en) |
| FR (1) | FR2232089B1 (en) |
| GB (1) | GB1457613A (en) |
| NL (1) | NL184756C (en) |
| SE (1) | SE7407025L (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI251931B (en) * | 2004-12-29 | 2006-03-21 | Advanced Chip Eng Tech Inc | Imagine sensor with a protection layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676775A (en) * | 1971-05-07 | 1972-07-11 | Ibm | Method for measuring resistivity |
| US3786263A (en) * | 1972-06-21 | 1974-01-15 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| US3840740A (en) * | 1972-10-30 | 1974-10-08 | Gen Electric | Imaging device having solid-state target |
-
1974
- 1974-01-10 NL NLAANVRAGE7400334,A patent/NL184756C/en not_active IP Right Cessation
- 1974-02-28 GB GB906574A patent/GB1457613A/en not_active Expired
- 1974-05-25 DE DE19742425392 patent/DE2425392A1/en active Granted
- 1974-05-27 FR FR7418174A patent/FR2232089B1/fr not_active Expired
- 1974-05-28 SE SE7407025A patent/SE7407025L/ not_active Application Discontinuation
- 1974-05-29 JP JP49059849A patent/JPS5755225B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5028991A (en) | 1975-03-24 |
| NL184756C (en) | 1989-10-16 |
| NL7400334A (en) | 1974-12-03 |
| DE2425392A1 (en) | 1975-01-02 |
| NL184756B (en) | 1989-05-16 |
| FR2232089A1 (en) | 1974-12-27 |
| FR2232089B1 (en) | 1979-07-06 |
| GB1457613A (en) | 1976-12-08 |
| DE2425392C2 (en) | 1989-08-24 |
| SE7407025L (en) | 1974-12-02 |