[go: up one dir, main page]

JPS5754329A - Decompressed vapor-phase growing device - Google Patents

Decompressed vapor-phase growing device

Info

Publication number
JPS5754329A
JPS5754329A JP55129310A JP12931080A JPS5754329A JP S5754329 A JPS5754329 A JP S5754329A JP 55129310 A JP55129310 A JP 55129310A JP 12931080 A JP12931080 A JP 12931080A JP S5754329 A JPS5754329 A JP S5754329A
Authority
JP
Japan
Prior art keywords
gas
pipes
pipe
reaction pipe
growing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55129310A
Other languages
Japanese (ja)
Inventor
Masao Honda
Kazuhiro Nakao
Hiromitsu Mishimagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55129310A priority Critical patent/JPS5754329A/en
Publication of JPS5754329A publication Critical patent/JPS5754329A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To form a silicate glass film of high quality by providing the first, second and third gas pipes in the reaction pipe of the decompressed vapor-phase growing device, by arranging the first and second pipes out of them along the inside wall of the reaction pipe and by providing a plurality of gas jetting ports in the first and second pipes. CONSTITUTION:Si substrates 1 are set standing close together at an equal interval inside the reaction pipe 3 of the decompressed vaporphase growing device and are kept airtight by means of caps 4 and 5. Moreover, the first gas pipes 8 in three, the second gas pipes 9 in three and the third gas pipe in one, for instance, are fitted on the side of the cap 5. And, oxygen 10 and inert carrier gas, monosilane 13 and doping gas 14, and inert carrier gas 11 are supplied in prescribed quantities from the first gas pipes 8, the second gas pipes 9 and the third gas pipe, respectively, whereby the silicate glass film is formed. The first and second pipes 8 and 9 are arranged along the inside wall of the reaction pipe in such a manner that they are opposed to each other alternately and at an equal interval, and are provided with a plurality of jetting ports 16. By this constitution, the formation of a stable film of high quality and the improvement of the rate of production thereof can be realized.
JP55129310A 1980-09-19 1980-09-19 Decompressed vapor-phase growing device Pending JPS5754329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129310A JPS5754329A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129310A JPS5754329A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Publications (1)

Publication Number Publication Date
JPS5754329A true JPS5754329A (en) 1982-03-31

Family

ID=15006401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129310A Pending JPS5754329A (en) 1980-09-19 1980-09-19 Decompressed vapor-phase growing device

Country Status (1)

Country Link
JP (1) JPS5754329A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143697A2 (en) * 1983-11-16 1985-06-05 B T U Engineering Corporation Modular V-CVD diffusion furnace
WO1995008185A1 (en) * 1993-09-16 1995-03-23 Tokyo Electron Limited Film forming device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143697A2 (en) * 1983-11-16 1985-06-05 B T U Engineering Corporation Modular V-CVD diffusion furnace
EP0143697A3 (en) * 1983-11-16 1987-07-15 B T U Engineering Corporation Modular v-cvd diffusion furnace
WO1995008185A1 (en) * 1993-09-16 1995-03-23 Tokyo Electron Limited Film forming device

Similar Documents

Publication Publication Date Title
DE3169538D1 (en) Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition
GB1490665A (en) Method of growing epitaxial layers of silicon
JPS54153740A (en) Continuous vacuum treatment apparatus
JPS5529155A (en) Semiconductor device
JPS5754329A (en) Decompressed vapor-phase growing device
JPS5391665A (en) Plasma cvd device
JPS5754328A (en) Decompressed vapor-phase growing device
GB1412602A (en) Method and apparatus for producing a multi layer semi-conductor device utilizing liquid growth
CN208976523U (en) It is a kind of produce high-purity Nano-class cuprous oxide wrapping layer Dumet wire put a system
JPS5260570A (en) Vapor phase growing device
CA974033A (en) Process for purifying a gas containing hydrogen cyanide
JPS5680128A (en) Manufacture of thin film
JPS5681923A (en) Manufacture of thin film
JPS57100720A (en) Manufacture of amorphous semiconductor film
JPS56169116A (en) Manufacture of amorphous silicon film
JPS5727018A (en) Vapor growth device of compound semiconductor
JPS5210893A (en) Process for production of granular fluorite and hydrogen fluoride from the granular fluorite
JPS56155635A (en) Apparatus for oxide film growth in vacuum cvd process
JPS5710921A (en) Gas phase epitaxial growth device
JPS573711A (en) Production of trichlorosilane
JPS55165626A (en) Method for arranging substrate in chemical evaporating apparatus
JPS57138128A (en) Cvd device
JPS5375857A (en) Vapor phase growth apparatus
GB1406943A (en) Method of and an apparatus for the production of porous plastics
JPS5591815A (en) Silicon epitaxial growth