[go: up one dir, main page]

JPS575368A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS575368A
JPS575368A JP8001180A JP8001180A JPS575368A JP S575368 A JPS575368 A JP S575368A JP 8001180 A JP8001180 A JP 8001180A JP 8001180 A JP8001180 A JP 8001180A JP S575368 A JPS575368 A JP S575368A
Authority
JP
Japan
Prior art keywords
silicon film
film
etched
dioxidized
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8001180A
Other languages
Japanese (ja)
Other versions
JPS6250986B2 (en
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8001180A priority Critical patent/JPS575368A/en
Publication of JPS575368A publication Critical patent/JPS575368A/en
Publication of JPS6250986B2 publication Critical patent/JPS6250986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To unnecessitate a special mask in a semiconductor device by forming a guard ring region in a self-alignment manner with selective oxidation technique. CONSTITUTION:A dioxidized silicon film 2, a nitrided silicon film 3 and a dioxidized silicon film 4 are sequentially covered on the front surface of a substrate 1, and are pattern etched by a photo resist film 5. Then, the film 5 is removed, it is thermally oxidized, and a field dioxidized silicon film 6 is formed. Then, the nitrided silicon film 3 is etched, is annealed in oxidative atmosphere, and a P<+> type region 7 forming a guard ring is formed. Thereafter, the film 3 is etched and removed, and an electrode 8 is formed.
JP8001180A 1980-06-13 1980-06-13 Manufacture of semiconductor device Granted JPS575368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8001180A JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8001180A JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS575368A true JPS575368A (en) 1982-01-12
JPS6250986B2 JPS6250986B2 (en) 1987-10-28

Family

ID=13706374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8001180A Granted JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS575368A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113430U (en) * 1984-12-27 1986-07-17

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209138A (en) * 1988-02-18 1989-08-22 Bita:Kk Method for printing white card
JPH036979U (en) * 1989-06-06 1991-01-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113430U (en) * 1984-12-27 1986-07-17

Also Published As

Publication number Publication date
JPS6250986B2 (en) 1987-10-28

Similar Documents

Publication Publication Date Title
JPS575368A (en) Manufacture of semiconductor device
JPS52120782A (en) Manufacture of semiconductor device
JPS57155769A (en) Manufacture of semiconductor device
JPS57154855A (en) Manufacture of semiconductor device
JPS5726467A (en) Manufacture of semiconductor device
JPS5292486A (en) Manufacture of mis-type semiconductor device
JPS51136289A (en) Semi-conductor producing
JPS56111264A (en) Manufacture of semiconductor device
JPS5458381A (en) Manufacture for semiconductor device
JPS535578A (en) Manufacture of semiconductor device
JPS56137650A (en) Manufacture of semiconductor device
JPS5629347A (en) Manufacture of semiconductor device
JPS56131968A (en) Manufacture of semiconductor device
JPS56115564A (en) Manufacture of semiconductor integrated circuit device
JPS5736879A (en) Manufacture of semiconductor device
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS5754347A (en) Selective oxidation
JPS5374361A (en) Manufacture of semiconductor device
JPS6411325A (en) Semiconductor device and manufacture thereof
JPS5643744A (en) Manufacture of semiconductor device
JPS54162476A (en) Semiconductor device and its manufacture
JPS5713759A (en) Manufacture of semiconductor device
JPS5762543A (en) Manufacture of semiconductor device
JPS5269649A (en) Semiconductor distortion element
JPS57106074A (en) Manufacture of semiconductor