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JPS5749248A - Substrate heating and retaining device - Google Patents

Substrate heating and retaining device

Info

Publication number
JPS5749248A
JPS5749248A JP12481980A JP12481980A JPS5749248A JP S5749248 A JPS5749248 A JP S5749248A JP 12481980 A JP12481980 A JP 12481980A JP 12481980 A JP12481980 A JP 12481980A JP S5749248 A JPS5749248 A JP S5749248A
Authority
JP
Japan
Prior art keywords
substrate
base
rod
holes
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12481980A
Other languages
Japanese (ja)
Other versions
JPS634702B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12481980A priority Critical patent/JPS5749248A/en
Publication of JPS5749248A publication Critical patent/JPS5749248A/en
Publication of JPS634702B2 publication Critical patent/JPS634702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Heating Bodies (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PURPOSE:To increase the efficiency of heating and retaining works by providing a mechanism for holding a substrate in parallel with the surface to be heated and held with the substrate to be treated at the prescribed distance, thereby preventing the crack of the substrate due to the thermal strain in the step of heat treating, e.g., laser annealing or the like. CONSTITUTION:A heating base 3 internally containing a heater 1 is secured via a heat insulator 4 to a stage 5. A substrate 6 to be treated is held (or hot chucked) on a circular substrate holding surface 7 having vacuum attracting holes 2 of the base 3. More than three holes are formed symmetrically with respect to a center at the base 3, and a substrate supporting rod 9 elevationally movable integrally with the base via a heat insulating tube 10 to the holes is arranged. At the installing time the rod 9 is projected at the position isolated from the holding surface y of the base 3 heated to desire treating temperature, the substrate 6 is carried at the end, is preheated, is thus gradually heated, the rod is then lowered, and the holding surface is attracted and secured. After the treatment of prescribed temperature and time is finished, the substrate is released from attraction, the rod is raised, and is gradually cooled. Thus, it can prevent the damage of the substrate due to the thermal strain without providing a particular device.
JP12481980A 1980-09-09 1980-09-09 Substrate heating and retaining device Granted JPS5749248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12481980A JPS5749248A (en) 1980-09-09 1980-09-09 Substrate heating and retaining device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12481980A JPS5749248A (en) 1980-09-09 1980-09-09 Substrate heating and retaining device

Publications (2)

Publication Number Publication Date
JPS5749248A true JPS5749248A (en) 1982-03-23
JPS634702B2 JPS634702B2 (en) 1988-01-30

Family

ID=14894888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12481980A Granted JPS5749248A (en) 1980-09-09 1980-09-09 Substrate heating and retaining device

Country Status (1)

Country Link
JP (1) JPS5749248A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053774A (en) * 1983-09-02 1985-03-27 株式会社日立製作所 Substrate baking equipment
JPS61168238A (en) * 1985-01-21 1986-07-29 Fujitsu Ltd Inspecting apparatus of semiconductor device
JPS62201932U (en) * 1986-06-14 1987-12-23
JPS6446930A (en) * 1987-05-30 1989-02-21 Tokyo Electron Ltd Base plate for sample
KR100603239B1 (en) 2003-09-25 2006-07-20 에스엠시 가부시키가이샤 Temperature regulating apparatus for semi-conductor substrate
WO2014041905A1 (en) * 2012-09-11 2014-03-20 シャープ株式会社 Testing jig, inspection device, mounting device, and testing device
JP2017041642A (en) * 2014-12-16 2017-02-23 株式会社東京精密 Semiconductor wafer inspection device and semiconductor wafer inspection method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49141759U (en) * 1973-04-10 1974-12-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49141759U (en) * 1973-04-10 1974-12-06

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053774A (en) * 1983-09-02 1985-03-27 株式会社日立製作所 Substrate baking equipment
JPS61168238A (en) * 1985-01-21 1986-07-29 Fujitsu Ltd Inspecting apparatus of semiconductor device
JPS62201932U (en) * 1986-06-14 1987-12-23
JPH0521875Y2 (en) * 1986-06-14 1993-06-04
JPS6446930A (en) * 1987-05-30 1989-02-21 Tokyo Electron Ltd Base plate for sample
KR100603239B1 (en) 2003-09-25 2006-07-20 에스엠시 가부시키가이샤 Temperature regulating apparatus for semi-conductor substrate
WO2014041905A1 (en) * 2012-09-11 2014-03-20 シャープ株式会社 Testing jig, inspection device, mounting device, and testing device
CN104603626A (en) * 2012-09-11 2015-05-06 夏普株式会社 Testing jig, inspection device, mounting device, and testing device
JPWO2014041905A1 (en) * 2012-09-11 2016-08-18 シャープ株式会社 Test jig, inspection device, mounting device, and test device
JP2017041642A (en) * 2014-12-16 2017-02-23 株式会社東京精密 Semiconductor wafer inspection device and semiconductor wafer inspection method
US9869715B2 (en) 2014-12-16 2018-01-16 Tokyo Seimitsu Co., Ltd. Semiconductor wafer inspection apparatus and semiconductor wafer inspection method

Also Published As

Publication number Publication date
JPS634702B2 (en) 1988-01-30

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