JPS5732664A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5732664A JPS5732664A JP10728880A JP10728880A JPS5732664A JP S5732664 A JPS5732664 A JP S5732664A JP 10728880 A JP10728880 A JP 10728880A JP 10728880 A JP10728880 A JP 10728880A JP S5732664 A JPS5732664 A JP S5732664A
- Authority
- JP
- Japan
- Prior art keywords
- high concentration
- transistor
- emitter
- region
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To improve injection efficiency to an emitter of a reversely operating transistor by forming an emitter region containing impurities with high concentration while adjoining in the lateral direction of a base region of an inverter-transistor. CONSTITUTION:The structure of the transistor in the lateral direction is obtained in such a manner that the emitter region 6 containing N type impurities with high concentration are formed to the surface of a substrate in a shape that is overlapped to one part of the base region 2. Ions are mainly injected directly from said high concentration emitter region 6 without through a high concentration buried layer 14 in this structure. Accordingly, the emitter efficiency of the transistor can be improved without lowering the dielectric resistance of a coexisting bipolar transistor because the high concentration buried layer 14 can be kept away from the base region 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10728880A JPS5732664A (en) | 1980-08-05 | 1980-08-05 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10728880A JPS5732664A (en) | 1980-08-05 | 1980-08-05 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732664A true JPS5732664A (en) | 1982-02-22 |
| JPH0222545B2 JPH0222545B2 (en) | 1990-05-18 |
Family
ID=14455286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10728880A Granted JPS5732664A (en) | 1980-08-05 | 1980-08-05 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732664A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5784162A (en) * | 1980-11-13 | 1982-05-26 | Toshiba Corp | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH056617U (en) * | 1991-06-27 | 1993-01-29 | ナイルス部品株式会社 | Vehicle actuator control device |
-
1980
- 1980-08-05 JP JP10728880A patent/JPS5732664A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5784162A (en) * | 1980-11-13 | 1982-05-26 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0222545B2 (en) | 1990-05-18 |
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