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JPS5732632A - Development of resist - Google Patents

Development of resist

Info

Publication number
JPS5732632A
JPS5732632A JP10855380A JP10855380A JPS5732632A JP S5732632 A JPS5732632 A JP S5732632A JP 10855380 A JP10855380 A JP 10855380A JP 10855380 A JP10855380 A JP 10855380A JP S5732632 A JPS5732632 A JP S5732632A
Authority
JP
Japan
Prior art keywords
electric field
ions
base ions
resist
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10855380A
Other languages
Japanese (ja)
Inventor
Hiroji Harada
Shigeo Uotani
Wataru Wakamiya
Masao Nagatomo
Kyusaku Nishioka
Nobufumi Komori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10855380A priority Critical patent/JPS5732632A/en
Publication of JPS5732632A publication Critical patent/JPS5732632A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3007—Imagewise removal using liquid means combined with electrical means, e.g. force fields

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a pattern of a high resolution with an even advance of a neutralizing reaction by ensuring a continuous feeding of fresh ions to the surface of an unneutralized ion through acceleration of base ions with an AC electric field applied to a developer. CONSTITUTION:When the AC electric field is applied between electrodes 5a and 5b immersed in a developer 2 by an AC power source 6, base ions 7 reverses in the movement each time the polarity of the electric field changes and thus, oscillates. Proper selection of the frequency of the AC power source ensures continuous feeding of new base ions 7 to the boundary with a neutral product of an unneutral resist during the half cycle from the resist 3 to the substrate 4. the electric field applied this point not only mere diffusion of the base ions 7 but also forced movement thereof through the layer of the neutral product 8 by acceleration thereby enabling forced supply to fresh base ions continuously.
JP10855380A 1980-08-04 1980-08-04 Development of resist Pending JPS5732632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10855380A JPS5732632A (en) 1980-08-04 1980-08-04 Development of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10855380A JPS5732632A (en) 1980-08-04 1980-08-04 Development of resist

Publications (1)

Publication Number Publication Date
JPS5732632A true JPS5732632A (en) 1982-02-22

Family

ID=14487742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10855380A Pending JPS5732632A (en) 1980-08-04 1980-08-04 Development of resist

Country Status (1)

Country Link
JP (1) JPS5732632A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456211A (en) * 1990-06-25 1992-02-24 Matsushita Electron Corp Resist developing method
WO2005038527A3 (en) * 2003-10-06 2006-01-12 Intel Corp Enhancing photoresist performance using electric fields

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456211A (en) * 1990-06-25 1992-02-24 Matsushita Electron Corp Resist developing method
WO2005038527A3 (en) * 2003-10-06 2006-01-12 Intel Corp Enhancing photoresist performance using electric fields
US7374867B2 (en) 2003-10-06 2008-05-20 Intel Corporation Enhancing photoresist performance using electric fields

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