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JPS5731159A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5731159A
JPS5731159A JP10609080A JP10609080A JPS5731159A JP S5731159 A JPS5731159 A JP S5731159A JP 10609080 A JP10609080 A JP 10609080A JP 10609080 A JP10609080 A JP 10609080A JP S5731159 A JPS5731159 A JP S5731159A
Authority
JP
Japan
Prior art keywords
layer
light
hole
psg26
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10609080A
Other languages
Japanese (ja)
Inventor
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10609080A priority Critical patent/JPS5731159A/en
Publication of JPS5731159A publication Critical patent/JPS5731159A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To intercept external light, by burying the second metallic layer in the interlayer insulating layer between a poly Si layer and the first metallic layer. CONSTITUTION:PSG24 is stacked on a conductive poly Si layer 22 in an IC device for liquid crystal panel as an interlayer insulating film for the first layer, and a connecting hole is made. Next, Al 25 is made at the place except the vicinity of the hole for shade and the hole is again opened by stacking PSG26. Al video signal wiring 27 and a liquid crystal driving electrode 28 are formed on the PSG26. By said constitution, even if the light applied to the surface leaks from the opening section 29 of Al wiring 27, 28, the light is intercepted by a buried Al layer 25 and does not reach a semiconductor substrate 18. Therefore, no light leakage current is generated, and a normal picture will be displayed.
JP10609080A 1980-08-01 1980-08-01 Semiconductor device Pending JPS5731159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10609080A JPS5731159A (en) 1980-08-01 1980-08-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10609080A JPS5731159A (en) 1980-08-01 1980-08-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5731159A true JPS5731159A (en) 1982-02-19

Family

ID=14424843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10609080A Pending JPS5731159A (en) 1980-08-01 1980-08-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731159A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582871A (en) * 1981-06-29 1983-01-08 株式会社東芝 Liquid crystal display
US5610414A (en) * 1993-07-28 1997-03-11 Sharp Kabushiki Kaisha Semiconductor device
US5627557A (en) * 1992-08-20 1997-05-06 Sharp Kabushiki Kaisha Display apparatus
US5790213A (en) * 1994-09-08 1998-08-04 Sharp Kabushiki Kaisha Image display device having adjacent pixel overlapping circuit elements

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582871A (en) * 1981-06-29 1983-01-08 株式会社東芝 Liquid crystal display
US5627557A (en) * 1992-08-20 1997-05-06 Sharp Kabushiki Kaisha Display apparatus
US5610414A (en) * 1993-07-28 1997-03-11 Sharp Kabushiki Kaisha Semiconductor device
US5790213A (en) * 1994-09-08 1998-08-04 Sharp Kabushiki Kaisha Image display device having adjacent pixel overlapping circuit elements

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