JPS5730335A - Protection of wiring layer - Google Patents
Protection of wiring layerInfo
- Publication number
- JPS5730335A JPS5730335A JP10427580A JP10427580A JPS5730335A JP S5730335 A JPS5730335 A JP S5730335A JP 10427580 A JP10427580 A JP 10427580A JP 10427580 A JP10427580 A JP 10427580A JP S5730335 A JPS5730335 A JP S5730335A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- radical
- layer
- semiconductor substrate
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 3
- 229920001721 polyimide Polymers 0.000 abstract 3
- 239000009719 polyimide resin Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- 150000003755 zirconium compounds Chemical class 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- MDFFNEOEWAXZRQ-UHFFFAOYSA-N aminyl Chemical compound [NH2] MDFFNEOEWAXZRQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To increase the adhesive property for both the wiring layer provided on a semiconductor substrate and a resin film by a method wherein a hardened material layer, consisting of an organic zirconium compound and a silane delivative, is interposed between the wiring layer formed on the semiconductor substrate and the polyimide resin film. CONSTITUTION:On the Al wiring layer 3 provided on the semiconductor substrate 1 through the intermediary of an SiO2 film 2, a hardened material layer 4 of the composition consisting of the residue of the silane delivative having the residual radical of the organic zirconium compound of 20-80wt% and alkoxy radical, alkyl radical, amino radical, epoxy radical or the like, is formed, and then a polyimide resin layer 5 is covered on the hardened material layer 4. Through these procedures, the adhesiveness between the wiring layer 3 and the polyimide resin layer 5 is increased and the corrosion generating on the wiring layer can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10427580A JPS5730335A (en) | 1980-07-31 | 1980-07-31 | Protection of wiring layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10427580A JPS5730335A (en) | 1980-07-31 | 1980-07-31 | Protection of wiring layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5730335A true JPS5730335A (en) | 1982-02-18 |
Family
ID=14376366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10427580A Pending JPS5730335A (en) | 1980-07-31 | 1980-07-31 | Protection of wiring layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017041508A (en) * | 2015-08-18 | 2017-02-23 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
-
1980
- 1980-07-31 JP JP10427580A patent/JPS5730335A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017041508A (en) * | 2015-08-18 | 2017-02-23 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| US10680073B2 (en) | 2015-08-18 | 2020-06-09 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
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