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JPS5728956B2 - - Google Patents

Info

Publication number
JPS5728956B2
JPS5728956B2 JP3559675A JP3559675A JPS5728956B2 JP S5728956 B2 JPS5728956 B2 JP S5728956B2 JP 3559675 A JP3559675 A JP 3559675A JP 3559675 A JP3559675 A JP 3559675A JP S5728956 B2 JPS5728956 B2 JP S5728956B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3559675A
Other languages
Japanese (ja)
Other versions
JPS51111087A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50035596A priority Critical patent/JPS51111087A/ja
Publication of JPS51111087A publication Critical patent/JPS51111087A/ja
Publication of JPS5728956B2 publication Critical patent/JPS5728956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP50035596A 1975-03-26 1975-03-26 Mutual compeusating mis semiconductor integrated circuit Granted JPS51111087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50035596A JPS51111087A (en) 1975-03-26 1975-03-26 Mutual compeusating mis semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50035596A JPS51111087A (en) 1975-03-26 1975-03-26 Mutual compeusating mis semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57222058A Division JPS58116762A (ja) 1982-12-20 1982-12-20 相補型mis半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS51111087A JPS51111087A (en) 1976-10-01
JPS5728956B2 true JPS5728956B2 (zh) 1982-06-19

Family

ID=12446173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50035596A Granted JPS51111087A (en) 1975-03-26 1975-03-26 Mutual compeusating mis semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS51111087A (zh)

Also Published As

Publication number Publication date
JPS51111087A (en) 1976-10-01

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