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JPS5728385A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5728385A
JPS5728385A JP10295080A JP10295080A JPS5728385A JP S5728385 A JPS5728385 A JP S5728385A JP 10295080 A JP10295080 A JP 10295080A JP 10295080 A JP10295080 A JP 10295080A JP S5728385 A JPS5728385 A JP S5728385A
Authority
JP
Japan
Prior art keywords
regions
type
layer
shaped
crooked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10295080A
Other languages
Japanese (ja)
Inventor
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10295080A priority Critical patent/JPS5728385A/en
Publication of JPS5728385A publication Critical patent/JPS5728385A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the laser which does not from a kink by a method wherein each active optical waveguide passage to be integrated is not shaped in normal straight lines and crooked sections are formed at one parts, and one parts of rays wave-guided are discharged intentionally or received from the optical waveguide passage adjoining inversely when preparing the semiconductor laser by integration two lasres. CONSTITUTION:An N type AlGaAs layer 32, an N type GaAs layer 33, an N type AlGaAs layer 34 and a P type GaAs layer 35 are laminated on an N type GaAs substrate 31 and grown, and a mask of a Si3N4 film, etc. is used, Zn, etc. are diffused and the first and second P type regions 38a and 38b, which are opposed mutually, are shaped. The whole is thermally treated again, the distribution of the impurities of these ends is made gentle and P<+> type regions 39a and 39b are formed. Accordingly, P type regions 33a and 33b by the regions 30a and 39b are shaped in the layer 33, and these regions are worked as light emitting regions, but the regions 33a and 33b are not each formed in the regions of straight lines and are brought to crooked conditions at that time, and the crooked sections of the first and second active waveguide sections A and B are approached.
JP10295080A 1980-07-26 1980-07-26 Semiconductor laser Pending JPS5728385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10295080A JPS5728385A (en) 1980-07-26 1980-07-26 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10295080A JPS5728385A (en) 1980-07-26 1980-07-26 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5728385A true JPS5728385A (en) 1982-02-16

Family

ID=14341089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10295080A Pending JPS5728385A (en) 1980-07-26 1980-07-26 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5728385A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4718069A (en) * 1986-10-27 1988-01-05 Spectra Diode Laboratories, Inc. Semiconductor laser array with single lobed output
US4833687A (en) * 1985-12-18 1989-05-23 Sony Corporation Distributed feedback semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561086A (en) * 1978-10-30 1980-05-08 Xerox Corp Monolithic laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561086A (en) * 1978-10-30 1980-05-08 Xerox Corp Monolithic laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833687A (en) * 1985-12-18 1989-05-23 Sony Corporation Distributed feedback semiconductor laser
US4718069A (en) * 1986-10-27 1988-01-05 Spectra Diode Laboratories, Inc. Semiconductor laser array with single lobed output

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