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JPS5726441A - Cvd method and device therefor - Google Patents

Cvd method and device therefor

Info

Publication number
JPS5726441A
JPS5726441A JP9993680A JP9993680A JPS5726441A JP S5726441 A JPS5726441 A JP S5726441A JP 9993680 A JP9993680 A JP 9993680A JP 9993680 A JP9993680 A JP 9993680A JP S5726441 A JPS5726441 A JP S5726441A
Authority
JP
Japan
Prior art keywords
gas
excited
heating
furnace
psg film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9993680A
Other languages
Japanese (ja)
Inventor
Takeo Yoshimi
Hideo Sakai
Miyoko Shibata
Akira Takamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9993680A priority Critical patent/JPS5726441A/en
Publication of JPS5726441A publication Critical patent/JPS5726441A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To effectively and readily obtain a CVD film of desired components by mixing gas difficult to be excited with other gas after preliminarily exciting (heating) or varying the degree of the preliminarily exciting (heating) and reacting them. CONSTITUTION:To form a PSG film, PH3+N2O is necessary for gas (I) and SiH4+N2O is necessary for the second (II) gas. Since the gas (I) is more difficult to be excited than the gas (II), the gas (I) is supplied to a reaction furnace 11 after passing through a preliminary excitation (heating) chamber 8 from a supply port 5. The gas (II) is supplied from a tube 7 directly to the furnace 11. The gases (I) and (II) are mixed in the furnace 11, are then excited by an induction coil 3, are thus reacted in plasma state, and a PSG film is formed on the surface of a water W. At this time the gas (I) is sufficiently excited due to the preliminary excitation, and the PSG film containing the prescribed component density can be formed.
JP9993680A 1980-07-23 1980-07-23 Cvd method and device therefor Pending JPS5726441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9993680A JPS5726441A (en) 1980-07-23 1980-07-23 Cvd method and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9993680A JPS5726441A (en) 1980-07-23 1980-07-23 Cvd method and device therefor

Publications (1)

Publication Number Publication Date
JPS5726441A true JPS5726441A (en) 1982-02-12

Family

ID=14260598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9993680A Pending JPS5726441A (en) 1980-07-23 1980-07-23 Cvd method and device therefor

Country Status (1)

Country Link
JP (1) JPS5726441A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0167703A2 (en) * 1984-06-29 1986-01-15 International Business Machines Corporation A method of homogeneous chemical vapour deposition
US4919077A (en) * 1986-12-27 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus
US5021114A (en) * 1987-07-20 1991-06-04 Hitachi, Ltd. Apparatus for treating material by using plasma
WO1993013552A1 (en) * 1986-12-27 1993-07-08 Masao Oda Semiconductor fabricating unit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0167703A2 (en) * 1984-06-29 1986-01-15 International Business Machines Corporation A method of homogeneous chemical vapour deposition
US4919077A (en) * 1986-12-27 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus
WO1993013552A1 (en) * 1986-12-27 1993-07-08 Masao Oda Semiconductor fabricating unit
US5021114A (en) * 1987-07-20 1991-06-04 Hitachi, Ltd. Apparatus for treating material by using plasma

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