JPS57210538A - Impregnation type cathode and its manufacturing process - Google Patents
Impregnation type cathode and its manufacturing processInfo
- Publication number
- JPS57210538A JPS57210538A JP9625681A JP9625681A JPS57210538A JP S57210538 A JPS57210538 A JP S57210538A JP 9625681 A JP9625681 A JP 9625681A JP 9625681 A JP9625681 A JP 9625681A JP S57210538 A JPS57210538 A JP S57210538A
- Authority
- JP
- Japan
- Prior art keywords
- iridium
- tungsten
- grain
- tungsten grain
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005470 impregnation Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 5
- 229910052721 tungsten Inorganic materials 0.000 abstract 5
- 239000010937 tungsten Substances 0.000 abstract 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052741 iridium Inorganic materials 0.000 abstract 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- -1 by way of example Chemical compound 0.000 abstract 1
- XWDKRVSSHIJNJP-UHFFFAOYSA-N carbon monoxide;iridium Chemical group [Ir].[Ir].[Ir].[Ir].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] XWDKRVSSHIJNJP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052762 osmium Inorganic materials 0.000 abstract 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/28—Dispenser-type cathodes, e.g. L-cathode
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
PURPOSE:To manufacture an impregnation type cathode excellent in useful life characteristics and stability besides ample distinctive qualities, by cladding the surface of a tungsten grain with such metallic elements as osmium, iridium and ruthenium of its simple substance or their alloy and sintering this metal-clad tungsten gain, thus forming a sintered base body. CONSTITUTION:Iridium-carbonyl is dissolved in ethyl alcohol, by way of example, and a tungsten grain powder of about 5mum in average grain diameter is mixed, while an iridium metallic film of about 0.5mum in thickness is deposit- metallized on the surface of the tungsten grain after being heated with about 200 deg.C in a current of hydrogen. Afterward, it is formed with the same process as does the following conventional technique. Powder of the said iridium-clad tungsten grain is sintered with a temperature of about 2,200 deg.C in an ambience of hydrogen and it is made into something a bar of about 20% in porosity. Then, this bar's porous part is impregnated with copper so as to have its machining facilitated and then it is machined by a lathe into a circular plate or disc of 35mm. in diameter and 3mm. in thickness, for example.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9625681A JPS57210538A (en) | 1981-06-22 | 1981-06-22 | Impregnation type cathode and its manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9625681A JPS57210538A (en) | 1981-06-22 | 1981-06-22 | Impregnation type cathode and its manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57210538A true JPS57210538A (en) | 1982-12-24 |
Family
ID=14160111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9625681A Pending JPS57210538A (en) | 1981-06-22 | 1981-06-22 | Impregnation type cathode and its manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57210538A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62287544A (en) * | 1986-06-06 | 1987-12-14 | Toshiba Corp | Manufacture of impregnated cathode |
| CN113936981A (en) * | 2021-09-29 | 2022-01-14 | 北京工业大学 | Preparation method of impregnated tungsten-rhenium-osmium ternary mixed-base diffusion cathode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52152154A (en) * | 1976-06-14 | 1977-12-17 | Matsushita Electric Ind Co Ltd | Hot-cathode |
| JPS5313348A (en) * | 1976-06-21 | 1978-02-06 | Varian Associates | Microwave tube with iridium cathode |
| JPS5382256A (en) * | 1976-12-28 | 1978-07-20 | Nec Corp | Oxide coated cathode |
-
1981
- 1981-06-22 JP JP9625681A patent/JPS57210538A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52152154A (en) * | 1976-06-14 | 1977-12-17 | Matsushita Electric Ind Co Ltd | Hot-cathode |
| JPS5313348A (en) * | 1976-06-21 | 1978-02-06 | Varian Associates | Microwave tube with iridium cathode |
| JPS5382256A (en) * | 1976-12-28 | 1978-07-20 | Nec Corp | Oxide coated cathode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62287544A (en) * | 1986-06-06 | 1987-12-14 | Toshiba Corp | Manufacture of impregnated cathode |
| CN113936981A (en) * | 2021-09-29 | 2022-01-14 | 北京工业大学 | Preparation method of impregnated tungsten-rhenium-osmium ternary mixed-base diffusion cathode |
| CN113936981B (en) * | 2021-09-29 | 2023-06-23 | 北京工业大学 | Preparation method of an impregnated tungsten-rhenium-osmium ternary mixed matrix diffusion cathode |
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