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JPS57208182A - Manufacture of phtoelectric converter - Google Patents

Manufacture of phtoelectric converter

Info

Publication number
JPS57208182A
JPS57208182A JP56094207A JP9420781A JPS57208182A JP S57208182 A JPS57208182 A JP S57208182A JP 56094207 A JP56094207 A JP 56094207A JP 9420781 A JP9420781 A JP 9420781A JP S57208182 A JPS57208182 A JP S57208182A
Authority
JP
Japan
Prior art keywords
film
reflection preventive
layer
preventive film
electrode material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56094207A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56094207A priority Critical patent/JPS57208182A/en
Publication of JPS57208182A publication Critical patent/JPS57208182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To uniformly form the permeability and refractive index of a reflection preventive film by forming selectively an electrode material on a reflection preventive film, then heat treating it to immerse the electrode material in the reflection preventive film to connect it to an impurity layer. CONSTITUTION:The silicon of a substrate semiconductor 1 is thermally oxidized, the oxidized film 3 is then selectively retained, and impurity layers 4, 5 are formed at the other part. A reflection preventive film 6 is covered on the upper surface of the layer 5, is then prebaked, a material of aluminum electrode 10 is covered on the upper surface, is then dried, is heated at approx. 400-800 deg.C to diffuse part of the electrode material through the film 6 to the surface of the layer 5 of the substrate 1. An alloy of the film 6 and the material 10 is formed by this diffusion as a barrier.
JP56094207A 1981-06-17 1981-06-17 Manufacture of phtoelectric converter Pending JPS57208182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56094207A JPS57208182A (en) 1981-06-17 1981-06-17 Manufacture of phtoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56094207A JPS57208182A (en) 1981-06-17 1981-06-17 Manufacture of phtoelectric converter

Publications (1)

Publication Number Publication Date
JPS57208182A true JPS57208182A (en) 1982-12-21

Family

ID=14103855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56094207A Pending JPS57208182A (en) 1981-06-17 1981-06-17 Manufacture of phtoelectric converter

Country Status (1)

Country Link
JP (1) JPS57208182A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195879A (en) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd Amorphous silicon solar cell
JPS60140883A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Semiconductor device manufacturing method
JPS60140882A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Paste materials for semiconductor manufacturing
JPS60140881A (en) * 1983-12-28 1985-07-25 Hitachi Ltd How to manufacture solar cells
DE3516117A1 (en) * 1985-05-04 1986-11-06 Telefunken electronic GmbH, 7100 Heilbronn SOLAR CELL
WO1989008328A1 (en) * 1988-03-05 1989-09-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Fabrication method for semiconductor device and film formation apparatus for said method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195879A (en) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd Amorphous silicon solar cell
JPS60140883A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Semiconductor device manufacturing method
JPS60140882A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Paste materials for semiconductor manufacturing
JPS60140881A (en) * 1983-12-28 1985-07-25 Hitachi Ltd How to manufacture solar cells
JPH0518268B2 (en) * 1983-12-28 1993-03-11 Hitachi Ltd
DE3516117A1 (en) * 1985-05-04 1986-11-06 Telefunken electronic GmbH, 7100 Heilbronn SOLAR CELL
WO1989008328A1 (en) * 1988-03-05 1989-09-08 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Fabrication method for semiconductor device and film formation apparatus for said method

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