[go: up one dir, main page]

JPS57188885A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS57188885A
JPS57188885A JP56073590A JP7359081A JPS57188885A JP S57188885 A JPS57188885 A JP S57188885A JP 56073590 A JP56073590 A JP 56073590A JP 7359081 A JP7359081 A JP 7359081A JP S57188885 A JPS57188885 A JP S57188885A
Authority
JP
Japan
Prior art keywords
resistance
layers
variation
diffusion
resistance layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56073590A
Other languages
Japanese (ja)
Other versions
JPS6410110B2 (en
Inventor
Kazuji Yamada
Kiyomitsu Suzuki
Motohisa Nishihara
Satoshi Shimada
Hideo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56073590A priority Critical patent/JPS57188885A/en
Publication of JPS57188885A publication Critical patent/JPS57188885A/en
Publication of JPS6410110B2 publication Critical patent/JPS6410110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain a constant output at all times despite the variation of temperature by a method wherein a pattern is provided in such a manner that a difference in variation of resistance caused by the difference between the shapes of the pattern is minimized. CONSTITUTION:A region of a diffusion layer with low resistance is formed in each of the other facing two resistance layers and the other two resistance layers are allowed to generate the same variation as that of resistance due to the distortion of two of the resistance layers. In this case, for instance, in the substantially central portions of resistance layers other than resistance layers 4C, 4D where diffusion layers 6C, 7C with low resistance have been formed, i.e., resistance layers 4A, 4B, diffusion layers 10A, 10B having roughly the same areas as those of 6C, 7C are provided. If these diffusion layers are bridged, their facing sides become almost electrically symmetrical. For this reason, the output characteristics due to the variation of temperature are improved to about 1/10 in comparison with conventional ones.
JP56073590A 1981-05-18 1981-05-18 Semiconductor pressure sensor Granted JPS57188885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073590A JPS57188885A (en) 1981-05-18 1981-05-18 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073590A JPS57188885A (en) 1981-05-18 1981-05-18 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS57188885A true JPS57188885A (en) 1982-11-19
JPS6410110B2 JPS6410110B2 (en) 1989-02-21

Family

ID=13522675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073590A Granted JPS57188885A (en) 1981-05-18 1981-05-18 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS57188885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6174374A (en) * 1984-09-19 1986-04-16 Toyota Central Res & Dev Lab Inc semiconductor pressure transducer
JPS61172378A (en) * 1985-01-28 1986-08-04 Nec Corp Pressure sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6174374A (en) * 1984-09-19 1986-04-16 Toyota Central Res & Dev Lab Inc semiconductor pressure transducer
JPS61172378A (en) * 1985-01-28 1986-08-04 Nec Corp Pressure sensor

Also Published As

Publication number Publication date
JPS6410110B2 (en) 1989-02-21

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57188885A (en) Semiconductor pressure sensor
JPS54136141A (en) Magnetic bubble memory element and its manufacture
JPS5522863A (en) Manufacturing method for semiconductor device
JPS5779647A (en) Master slice chip
JPS5664472A (en) Detector for strain by semiconductor
JPS56110289A (en) Manufacture of semiconductor laser element
JPS57197873A (en) Semiconductor pressure detector
JPS647681A (en) Distributed reflex semiconductor laser
JPS6482548A (en) Formation of interconnection pattern
JPS5680195A (en) Semiconductor laser device
JPS5561056A (en) High resistance structure of integrated circuit
JPS5727090A (en) Manufacture of semiconductor light emitting device
JPS5390A (en) Composite photoelectric conversion element
JPS56133882A (en) Semiconductor optical detector
JPS5724565A (en) Semiconductor circuit element
JPS5762586A (en) Semiconductor laser
JPS533066A (en) Electrode formation method
JPS56155547A (en) Semiconductor device
JPS57167693A (en) Manufacture of optical semiconductor element
JPS54149486A (en) Pressure-sensitive element
JPS57147287A (en) Manufacture of radiation thermocouple
JPS568876A (en) Triac
JPS5779680A (en) Manufacture of silicon avalanche photodiode
JPS6484743A (en) Semiconductor device