JPS57188878A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57188878A JPS57188878A JP56073088A JP7308881A JPS57188878A JP S57188878 A JPS57188878 A JP S57188878A JP 56073088 A JP56073088 A JP 56073088A JP 7308881 A JP7308881 A JP 7308881A JP S57188878 A JPS57188878 A JP S57188878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electron
- electrodes
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase the integration degree and the speed of a semiconductor device, by providing a high-electron mobility transistor (HEMT) having, on a substrate, a channel layer, an electron supply layer for generating an electron charge layer, a pair of electrodes formed on the electron supply layer sandwiching a control electrode, and a third electrode to be connected to the electron charge layer. CONSTITUTION:On a substrate 1, a channel layer 2 constituted by a non-doped GaAs single crystal layer is formed, together with an electron supply layer 3 made of N type AlGaAs. An electron charge layer 4 is generated in the channel layer 2 near the hetero interface. On the regions for forming drain and source electrode 5, 6 of this enhancement type transistor and a pair of electrodes 6, 7 defining two terminals of a load element, an Au-Ge metal layer 8 is deposited by evaporation and alloyed. These electrodes and the electron charge layer 4 are ohmically connected togher. A recess for forming a gate is provided, and a gate electrode 10 is formed thereon. Thereby, a highly integrated, high-speed semiconductor device is obtained through a simple process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073088A JPS57188878A (en) | 1981-05-15 | 1981-05-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073088A JPS57188878A (en) | 1981-05-15 | 1981-05-15 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188878A true JPS57188878A (en) | 1982-11-19 |
| JPS6354229B2 JPS6354229B2 (en) | 1988-10-27 |
Family
ID=13508227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56073088A Granted JPS57188878A (en) | 1981-05-15 | 1981-05-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188878A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60176275A (en) * | 1984-02-22 | 1985-09-10 | Nec Corp | Integrated type semiconductor device |
| JPS61113282A (en) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | Field effect transistor |
-
1981
- 1981-05-15 JP JP56073088A patent/JPS57188878A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60176275A (en) * | 1984-02-22 | 1985-09-10 | Nec Corp | Integrated type semiconductor device |
| JPS61113282A (en) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | Field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6354229B2 (en) | 1988-10-27 |
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