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JPS57186292A - Insulating gate type field effect semiconductor device - Google Patents

Insulating gate type field effect semiconductor device

Info

Publication number
JPS57186292A
JPS57186292A JP7165281A JP7165281A JPS57186292A JP S57186292 A JPS57186292 A JP S57186292A JP 7165281 A JP7165281 A JP 7165281A JP 7165281 A JP7165281 A JP 7165281A JP S57186292 A JPS57186292 A JP S57186292A
Authority
JP
Japan
Prior art keywords
gate
semiconductor substrate
gate insulating
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7165281A
Other languages
Japanese (ja)
Other versions
JPS6122400B2 (en
Inventor
Naotaka Sumihiro
Yasutaka Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7165281A priority Critical patent/JPS57186292A/en
Publication of JPS57186292A publication Critical patent/JPS57186292A/en
Publication of JPS6122400B2 publication Critical patent/JPS6122400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To eliminate an erroneous writing caused by the floating effect of a non-selective memory cell, by installing functioning section which impresses an electric potential having a polarity which inhibits formation of an inversed layer in the semiconductor substrate below the gate insulating film upon the gate electrode. CONSTITUTION:A source area 2 and a drain area 3 are formed in a semiconductor substrate 1. Moreover, a floating gate 5 is formed in gate insulating substances 41 and 42 and a control gate 6 is formed on the insulating substance. Then, a functioning section which impresses an electric potential of a polarity which inhibits formation of an inversed layer on the surface of the semiconductor substrate 1 below the gate insulating film 4 upon a gate electrode 6, is added to such a configuration. Thereafter, it is arranged so as to prevent the floating effect of the non-selective memory cell in a memory matrix 11, by installing, for example, a digit line buffer circuit 12 having a voltage controlling function and a word line buffer circuit 13 in the periphery of the memory matrix 11.
JP7165281A 1981-05-12 1981-05-12 Insulating gate type field effect semiconductor device Granted JPS57186292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7165281A JPS57186292A (en) 1981-05-12 1981-05-12 Insulating gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7165281A JPS57186292A (en) 1981-05-12 1981-05-12 Insulating gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS57186292A true JPS57186292A (en) 1982-11-16
JPS6122400B2 JPS6122400B2 (en) 1986-05-31

Family

ID=13466748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7165281A Granted JPS57186292A (en) 1981-05-12 1981-05-12 Insulating gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57186292A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542307A (en) * 1978-09-14 1980-03-25 Toshiba Corp Semiconductor memory unit
GB2053611A (en) * 1979-07-02 1981-02-04 Mostek Corp Programmable read only memory integrated circuit with bit-check and de-programming modes and methods for programming and testing said circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542307A (en) * 1978-09-14 1980-03-25 Toshiba Corp Semiconductor memory unit
GB2053611A (en) * 1979-07-02 1981-02-04 Mostek Corp Programmable read only memory integrated circuit with bit-check and de-programming modes and methods for programming and testing said circuit

Also Published As

Publication number Publication date
JPS6122400B2 (en) 1986-05-31

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