JPS57183392A - Apparatus for preparation of single crystal - Google Patents
Apparatus for preparation of single crystalInfo
- Publication number
- JPS57183392A JPS57183392A JP6520581A JP6520581A JPS57183392A JP S57183392 A JPS57183392 A JP S57183392A JP 6520581 A JP6520581 A JP 6520581A JP 6520581 A JP6520581 A JP 6520581A JP S57183392 A JPS57183392 A JP S57183392A
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- molten liquid
- single crystal
- crucible
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To provide an apparatus for the continuous preparation of a single crystal having long length and high quality, by placing a crylindrical barrier in a crucible so as to divide the liquid surface with the barrier and allow the flow of the molten liquid at the bottom of the crucible, feeding the raw material to the molten liquid outside of the cylindrical barrier, and pulling up the single crystal from the molten liquid in the barrier.
CONSTITUTION: A cylindrical barrier 4 is placed in the crucible 3 so as to divide the surface of the liquid, and the single crystal 1 is pulled up under toation from the molten liquid 2 in the barrier 4. The raw material 8 in the hopper 7 is fed to the molten liquid 2 in the crucible 3 continuously or intermittently by the opening and closing operation of the shutter 9. The barrier 4 inhibits the propagation of the wave of the molten liquid 2 caused by the drop of the raw material 8 in the molten liquid 2, and suppresses the thermal influence of the raw material 8 immediately after feeding which may cause the direct interference to the growing interface of the single crystal 1. A long single crystal can be prepared by feeding the raw material 8 to the crucible while pulling up the crystal 1.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6520581A JPS57183392A (en) | 1981-05-01 | 1981-05-01 | Apparatus for preparation of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6520581A JPS57183392A (en) | 1981-05-01 | 1981-05-01 | Apparatus for preparation of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57183392A true JPS57183392A (en) | 1982-11-11 |
Family
ID=13280175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6520581A Pending JPS57183392A (en) | 1981-05-01 | 1981-05-01 | Apparatus for preparation of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183392A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230689A (en) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | Method and apparatus for growing Group 3-5 compound semiconductor crystals |
| JPH01148784A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Crucible for single crystal pulling up device |
| JPH01148781A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Granule supplying pipe |
| JPH01282194A (en) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | Production of single crystal |
| US5080873A (en) * | 1987-11-02 | 1992-01-14 | Mitsubishi Materials Corporation | Apparatus for growing crystals |
| CN1329559C (en) * | 2004-08-10 | 2007-08-01 | 山东大学 | Suspension crucible for growth of lithium niobate crystal with near stoichiometric ratio and its growth process |
| CN104294353A (en) * | 2013-07-19 | 2015-01-21 | 山东省科学院新材料研究所 | Method for improving homogeneity of potassium tantalate niobate crystal through double-crucible real-time material-feeding technology |
| CN104911697A (en) * | 2015-07-06 | 2015-09-16 | 中国电子科技集团公司第二十六研究所 | Constant-component crystal growth control system and method for lifting single-crystal furnace |
-
1981
- 1981-05-01 JP JP6520581A patent/JPS57183392A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230689A (en) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | Method and apparatus for growing Group 3-5 compound semiconductor crystals |
| US5080873A (en) * | 1987-11-02 | 1992-01-14 | Mitsubishi Materials Corporation | Apparatus for growing crystals |
| JPH01148784A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Crucible for single crystal pulling up device |
| JPH01148781A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Granule supplying pipe |
| JPH01282194A (en) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | Production of single crystal |
| JPH0477712B2 (en) * | 1988-01-19 | 1992-12-09 | Oosaka Chitaniumu Seizo Kk | |
| CN1329559C (en) * | 2004-08-10 | 2007-08-01 | 山东大学 | Suspension crucible for growth of lithium niobate crystal with near stoichiometric ratio and its growth process |
| CN104294353A (en) * | 2013-07-19 | 2015-01-21 | 山东省科学院新材料研究所 | Method for improving homogeneity of potassium tantalate niobate crystal through double-crucible real-time material-feeding technology |
| CN104911697A (en) * | 2015-07-06 | 2015-09-16 | 中国电子科技集团公司第二十六研究所 | Constant-component crystal growth control system and method for lifting single-crystal furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57183392A (en) | Apparatus for preparation of single crystal | |
| JPS549174A (en) | Method of producing seingle crystal | |
| JPS5688896A (en) | Growth of single crystal | |
| JPS5276277A (en) | Producing long and narrow crystal | |
| JPS538375A (en) | Method and apparatus for pulling up single crystal | |
| JPS5361577A (en) | Growing method for horizontally pulled ribbon crystal | |
| JPS53144888A (en) | Producing apparatus for beltlike silicon crystal | |
| JPS56164098A (en) | Preparation of single crystal | |
| JPS5654299A (en) | Growing method of lead molybdate single crystal | |
| JPS5413477A (en) | Continuous growing apparatus for single crystal | |
| JPS53149875A (en) | Preparing apparatus for semiconductor crystal | |
| JPS57123888A (en) | Preparation of single crystal of compound semiconductor | |
| JPS5782199A (en) | Growing apparatus of single crystal | |
| JPS56164097A (en) | Device for pulling up single crystal | |
| JPS52134898A (en) | Gap single crystal with low dislocation density | |
| JPS57135797A (en) | Production of gadolinium-gallium-garnet single crystal | |
| JPS5438133A (en) | Fixing method | |
| JPS5545329A (en) | Device for sending laver slurry | |
| JPS5319905A (en) | Automatic inoculating method | |
| JPS5364465A (en) | Semiconductor crystal production apparatus | |
| JPS5520221A (en) | Production of compound semiconductor single crystal body | |
| JPS52111473A (en) | Ribbon crystal growth method | |
| JPS5692191A (en) | Production of single crystal and producing device using this method | |
| JPS5678496A (en) | Quartz glass crucible for pulling silicon single crystal | |
| JPS56114894A (en) | Method and apparatus for preparation of single crystal |