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JPS57181161A - Transistor - Google Patents

Transistor

Info

Publication number
JPS57181161A
JPS57181161A JP56066346A JP6634681A JPS57181161A JP S57181161 A JPS57181161 A JP S57181161A JP 56066346 A JP56066346 A JP 56066346A JP 6634681 A JP6634681 A JP 6634681A JP S57181161 A JPS57181161 A JP S57181161A
Authority
JP
Japan
Prior art keywords
region
emitter
base
electrodes
whole surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56066346A
Other languages
Japanese (ja)
Other versions
JPH0150115B2 (en
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP56066346A priority Critical patent/JPS57181161A/en
Publication of JPS57181161A publication Critical patent/JPS57181161A/en
Publication of JPH0150115B2 publication Critical patent/JPH0150115B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce chip area and to increase current capacity by a method wherein many round or oval-shaped contact regions on a base region are arranged in insular shape in an emitter region and emitter electrodes are provided on most of the whole surface of the emitter region. CONSTITUTION:An mesh-shaped emitter region 22 is provided on the whole surface on a base region located in the collector region 20 of an Si substrate and contact regions 23... in the base region are formed in round or oval shape and are arranged in insular shape by completely surrounding by the emitter region. Emitter electrodes 24 ohmically contact with most of the whole surface of the emitter region 22 and after covering the emitter electrodes 24 with an insulator 25, matrix base electrodes 26 are provided through electrode holes provided on each contact region 23 in the base region 21. In this way, the areas of the contact regions in the base region are reduced and the area of the emitter region is increased to reduce chip area and current capacity is increased.
JP56066346A 1981-04-30 1981-04-30 Transistor Granted JPS57181161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56066346A JPS57181161A (en) 1981-04-30 1981-04-30 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066346A JPS57181161A (en) 1981-04-30 1981-04-30 Transistor

Publications (2)

Publication Number Publication Date
JPS57181161A true JPS57181161A (en) 1982-11-08
JPH0150115B2 JPH0150115B2 (en) 1989-10-27

Family

ID=13313200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066346A Granted JPS57181161A (en) 1981-04-30 1981-04-30 Transistor

Country Status (1)

Country Link
JP (1) JPS57181161A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118753U (en) * 1982-02-04 1983-08-13 三洋電機株式会社 transistor structure
JPS62124861U (en) * 1986-01-30 1987-08-08
JPS63114259A (en) * 1986-10-31 1988-05-19 Nippon Denso Co Ltd bipolar transistor
US4942453A (en) * 1988-04-26 1990-07-17 Citizen Watch Co., Ltd. IC package
JPH04180629A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Semiconductor device
US5554880A (en) * 1994-08-08 1996-09-10 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US5932922A (en) * 1994-08-08 1999-08-03 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049693A (en) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056177A (en) * 1973-09-14 1975-05-16
JPS5138879A (en) * 1974-09-27 1976-03-31 Hitachi Ltd
JPS537643U (en) * 1976-07-06 1978-01-23
JPS5330476A (en) * 1976-09-01 1978-03-22 Ajinomoto Co Inc Gelling treatment method of outflow oil

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056177A (en) * 1973-09-14 1975-05-16
JPS5138879A (en) * 1974-09-27 1976-03-31 Hitachi Ltd
JPS537643U (en) * 1976-07-06 1978-01-23
JPS5330476A (en) * 1976-09-01 1978-03-22 Ajinomoto Co Inc Gelling treatment method of outflow oil

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118753U (en) * 1982-02-04 1983-08-13 三洋電機株式会社 transistor structure
JPS62124861U (en) * 1986-01-30 1987-08-08
JPS63114259A (en) * 1986-10-31 1988-05-19 Nippon Denso Co Ltd bipolar transistor
US4942453A (en) * 1988-04-26 1990-07-17 Citizen Watch Co., Ltd. IC package
JPH04180629A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Semiconductor device
US5554880A (en) * 1994-08-08 1996-09-10 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US5932922A (en) * 1994-08-08 1999-08-03 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US6103584A (en) * 1994-08-08 2000-08-15 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor

Also Published As

Publication number Publication date
JPH0150115B2 (en) 1989-10-27

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