JPS57179839A - Formation of pattern of resist for fine working - Google Patents
Formation of pattern of resist for fine workingInfo
- Publication number
- JPS57179839A JPS57179839A JP56064031A JP6403181A JPS57179839A JP S57179839 A JPS57179839 A JP S57179839A JP 56064031 A JP56064031 A JP 56064031A JP 6403181 A JP6403181 A JP 6403181A JP S57179839 A JPS57179839 A JP S57179839A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- methanol
- pattern
- time
- acetone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 15
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 abstract 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 6
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 abstract 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 abstract 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 230000018109 developmental process Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To increase the remaining rate after development in pattern formation in which descumming is carried out by irradiating far ultraviolet rays after drawing a pattern with electron beams, by using a specified developer different from the 1st developer as the 2nd developer. CONSTITUTION:A pattern is drawn on a resist composition made of polyglycidyl methacrylate (PGMA) or GMA-methyl methacrylate copolymer with electron beams, developed with 10:2 soln. of acetone:methanol, uniformly irradiated with far ultraviolet rays, and further developed with 1:1 soln. of acetone:methanol. The combination of developers such as 10:4 soln. of methylcellosolve acetate (MCA):methanol (the 1st time) with methyl isobutyl ketone (the 2nd time) or 10:2 soln. of acetone:methanol (the 1st time) with 4:6 soln. of MCA:methanol (the 2nd time) may be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56064031A JPS57179839A (en) | 1981-04-30 | 1981-04-30 | Formation of pattern of resist for fine working |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56064031A JPS57179839A (en) | 1981-04-30 | 1981-04-30 | Formation of pattern of resist for fine working |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57179839A true JPS57179839A (en) | 1982-11-05 |
Family
ID=13246346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56064031A Pending JPS57179839A (en) | 1981-04-30 | 1981-04-30 | Formation of pattern of resist for fine working |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57179839A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143473A (en) * | 1998-05-20 | 2000-11-07 | Fujitsu Limited | Film patterning method utilizing post-development residue remover |
| WO2016208313A1 (en) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | Development solution, pattern formation method, and electronic device production method |
-
1981
- 1981-04-30 JP JP56064031A patent/JPS57179839A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143473A (en) * | 1998-05-20 | 2000-11-07 | Fujitsu Limited | Film patterning method utilizing post-development residue remover |
| WO2016208313A1 (en) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | Development solution, pattern formation method, and electronic device production method |
| CN107735730A (en) * | 2015-06-23 | 2018-02-23 | 富士胶片株式会社 | developing solution, pattern forming method and manufacturing method of electronic device |
| JPWO2016208313A1 (en) * | 2015-06-23 | 2018-04-12 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method |
| US10562991B2 (en) | 2015-06-23 | 2020-02-18 | Fujifilm Corporation | Developer, pattern forming method, and electronic device manufacturing method |
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