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JPS57175800A - Method of producing ggg single crystal - Google Patents

Method of producing ggg single crystal

Info

Publication number
JPS57175800A
JPS57175800A JP5830081A JP5830081A JPS57175800A JP S57175800 A JPS57175800 A JP S57175800A JP 5830081 A JP5830081 A JP 5830081A JP 5830081 A JP5830081 A JP 5830081A JP S57175800 A JPS57175800 A JP S57175800A
Authority
JP
Japan
Prior art keywords
crucible
refractory
single crystal
ring
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5830081A
Other languages
Japanese (ja)
Inventor
Shigeo Endo
Kohei Ito
Fumio Nitanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP5830081A priority Critical patent/JPS57175800A/en
Publication of JPS57175800A publication Critical patent/JPS57175800A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: In the production of GGG crystal, the lower half of the crucible is reinforced with a refractory to prevent the deformation of the crucible and decrease the cotamination with inclusion.
CONSTITUTION: In the production of GGG single crystal by the Chokralsky method, the lower half of the crucible 1 is reinforced by putting a refractory, preferably the ring of zirconia refractory thereto. The refractory ring 2 is preferably larger than the outer diameter of the crucible at room temperature by 0.25/150W4/150 and has the sintering density corresponding to more than 70% of the theoretical density. The height of the ring 2 is needed to be more than 1/10 of the height of the crucible 1.
COPYRIGHT: (C)1982,JPO&Japio
JP5830081A 1981-04-17 1981-04-17 Method of producing ggg single crystal Pending JPS57175800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5830081A JPS57175800A (en) 1981-04-17 1981-04-17 Method of producing ggg single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5830081A JPS57175800A (en) 1981-04-17 1981-04-17 Method of producing ggg single crystal

Publications (1)

Publication Number Publication Date
JPS57175800A true JPS57175800A (en) 1982-10-28

Family

ID=13080365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5830081A Pending JPS57175800A (en) 1981-04-17 1981-04-17 Method of producing ggg single crystal

Country Status (1)

Country Link
JP (1) JPS57175800A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ303673B6 (en) * 2011-02-17 2013-02-20 Crytur Spol. S R. O. Preparation of doped garnet structure single crystals with diameters of up to 500 mm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ303673B6 (en) * 2011-02-17 2013-02-20 Crytur Spol. S R. O. Preparation of doped garnet structure single crystals with diameters of up to 500 mm

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