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JPS57164986A - Microwave plasma etching device - Google Patents

Microwave plasma etching device

Info

Publication number
JPS57164986A
JPS57164986A JP2902682A JP2902682A JPS57164986A JP S57164986 A JPS57164986 A JP S57164986A JP 2902682 A JP2902682 A JP 2902682A JP 2902682 A JP2902682 A JP 2902682A JP S57164986 A JPS57164986 A JP S57164986A
Authority
JP
Japan
Prior art keywords
gas
sample
electric discharge
voltage
etching speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2902682A
Other languages
Japanese (ja)
Other versions
JPS5813627B2 (en
Inventor
Sadayuki Okudaira
Keizo Suzuki
Ichiro Shikamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2902682A priority Critical patent/JPS5813627B2/en
Publication of JPS57164986A publication Critical patent/JPS57164986A/en
Publication of JPS5813627B2 publication Critical patent/JPS5813627B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve selective etching and to increase etching speed by providing a means of controlling the pressure of a gas for electric discharge in a vacuum chamber and a means for selecting the kind of bias voltage to be applied depending upon whether the material of the surface of a sample is a semiconductor or a conductor or an insulator.
CONSTITUTION: A gas for electric discharge is introduced into a vacuum chamber 7, and the microwaves generated with a magnetron 2 by a microwave oscillating power source 1 and the magnetic field generated by a magnetic field coil 4 and a magnet 5 are acted upon the gas for electric discharge, whereby plasma 11 is generated and the surface of a sample 12 is etched with the active particles in the plasma 11. If the sample 12 is of materials other than insulators such as Si, Al, negative DC voltage is applied to a susceptor 10 from an external voltage source 13 to achieve selective etching and to increase etching speed. If the sample 12 is of insulators such as SiO2, Si3N3 or the like, the pressure of the gas for electric discharge is controlled by controlling a gas introduction port 8 and a discharge port 9, and AC voltage is applied to the susceptor 10 from the power source 13, whereby the etching speed is increased.
COPYRIGHT: (C)1982,JPO&Japio
JP2902682A 1982-02-26 1982-02-26 Microwave plasma etching equipment Expired JPS5813627B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2902682A JPS5813627B2 (en) 1982-02-26 1982-02-26 Microwave plasma etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2902682A JPS5813627B2 (en) 1982-02-26 1982-02-26 Microwave plasma etching equipment

Publications (2)

Publication Number Publication Date
JPS57164986A true JPS57164986A (en) 1982-10-09
JPS5813627B2 JPS5813627B2 (en) 1983-03-15

Family

ID=12264896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2902682A Expired JPS5813627B2 (en) 1982-02-26 1982-02-26 Microwave plasma etching equipment

Country Status (1)

Country Link
JP (1) JPS5813627B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114531A (en) * 1984-11-09 1986-06-02 Hitachi Ltd plasma etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Surface treatment method and surface treatment equipment
JPS6240386A (en) * 1985-08-15 1987-02-21 Ulvac Corp Ecr plasma treatment device
JPS6265421A (en) * 1985-09-18 1987-03-24 Hitachi Ltd Microwave plasma processing method and device
JPS6289882A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Vapor phase etching method
JPS62193126A (en) * 1986-02-19 1987-08-25 Hitachi Ltd Microwave plasma processing method and apparatus
JPS6319822A (en) * 1986-07-14 1988-01-27 Hitachi Ltd Method and apparatus for dry etching
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
JPH0222486A (en) * 1988-07-12 1990-01-25 Anelva Corp Microwave plasma treating equipment
JPH03170666A (en) * 1989-11-29 1991-07-24 Hitachi Ltd plasma processing equipment
JPH0817807A (en) * 1995-03-15 1996-01-19 Hitachi Ltd Plasma processing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188413A (en) * 1984-10-05 1986-05-06 ミツク電子工業株式会社 rotary switch
DE3774098D1 (en) * 1986-12-29 1991-11-28 Sumitomo Metal Ind PLASMA UNIT.

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114531A (en) * 1984-11-09 1986-06-02 Hitachi Ltd plasma etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Surface treatment method and surface treatment equipment
JPS6240386A (en) * 1985-08-15 1987-02-21 Ulvac Corp Ecr plasma treatment device
JPH055168B2 (en) * 1985-09-18 1993-01-21 Hitachi Ltd
JPS6265421A (en) * 1985-09-18 1987-03-24 Hitachi Ltd Microwave plasma processing method and device
JPS6289882A (en) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd Vapor phase etching method
JPS6344827B2 (en) * 1985-10-14 1988-09-07 Handotai Energy Kenkyusho
JPS62193126A (en) * 1986-02-19 1987-08-25 Hitachi Ltd Microwave plasma processing method and apparatus
JPS6319822A (en) * 1986-07-14 1988-01-27 Hitachi Ltd Method and apparatus for dry etching
JPH0511413B2 (en) * 1986-07-14 1993-02-15 Hitachi Ltd
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
JPH0222486A (en) * 1988-07-12 1990-01-25 Anelva Corp Microwave plasma treating equipment
JPH03170666A (en) * 1989-11-29 1991-07-24 Hitachi Ltd plasma processing equipment
JPH0817807A (en) * 1995-03-15 1996-01-19 Hitachi Ltd Plasma processing method

Also Published As

Publication number Publication date
JPS5813627B2 (en) 1983-03-15

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